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Optical Determination of the Band Gap and Band Tail of Epitaxial Ag$_2$ZnSnSe$_4$ at Low Temperature
Authors:
S. Perret,
Y. Curé,
L. Grenet,
R. André,
H. Mariette,
J. Bleuse
Abstract:
We report on the precise determination of both the band gap E$_\text{g}$, and the characteristic energy $U$ of the band tail of localized defect states, for monocrystalline Ag$_2$ZnSnSe$_4$. Both photoluminescence excitation and time-resolved photoluminescence studies lead to E$_\text{g} = 1223\pm3$ meV, and $U = 20\pm3$ meV, at 6 K. The interest of the methodology developed here is to account qua…
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We report on the precise determination of both the band gap E$_\text{g}$, and the characteristic energy $U$ of the band tail of localized defect states, for monocrystalline Ag$_2$ZnSnSe$_4$. Both photoluminescence excitation and time-resolved photoluminescence studies lead to E$_\text{g} = 1223\pm3$ meV, and $U = 20\pm3$ meV, at 6 K. The interest of the methodology developed here is to account quantitatively for the time-resolved photoluminescence and photoluminescence excitation spectra by only considering standard textbook density of states, and state filling effects. Such an approach is different from the one most often used to evaluate the energy extent of the localized states, namely by measuring the energy shift between the photoluminescence emission and the excitation one -- the so-called Stokes shift. The advantage of the present method is that no arbitrary choice of the low power excitation has to be done to select the photoluminescence emission spectrum and its peak energy.
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Submitted 7 July, 2020;
originally announced July 2020.
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Generation of ultrashort (~10ps) spontaneous emission pulses by quantum dots in a switched optical microcavity
Authors:
Emanuel Peinke,
Tobias Sattler,
Guilherme Monteiro Torelly,
Joël Bleuse,
Julien Claudon,
Willem L. Vos,
Jean-Michel Gérard
Abstract:
We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental mode of a GaAs/AlAs micropillar. We track in real time by time-resolved photoluminescence its fundamental mode during its relaxation, using the emission of the Q…
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We report on the generation of few-ps long spontaneous emission pulses by quantum dots (QDs) in a switched optical microcavity. We use a pulsed optical injection of free charge carriers to induce a large frequency shift of the fundamental mode of a GaAs/AlAs micropillar. We track in real time by time-resolved photoluminescence its fundamental mode during its relaxation, using the emission of the QD ensemble as a broadband internal light source. Sub-ensembles of QDs emitting at a given frequency, interact transiently with the mode and emit an ultrashort spontaneous emission pulse into it. By playing with switching parameters and with the emission frequency of the QDs, selected by spectral filtering, pulse durations ranging from 300 ps down to 6 ps have been obtained. These pulses display a very small coherence length, which opens potential applications in the field of ultrafast imaging. The control of QD-mode coupling on ps-time scales establishes also cavity switching as a key resource for quantum photonics.
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Submitted 23 October, 2019;
originally announced October 2019.
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Effect of do** on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
Authors:
A. Ajay,
C. B. Lim,
D. A. Browne,
J. Polaczynski,
E. Bellet-Amalric,
J. Bleuse,
M. I. den Hertog,
E. Monroy
Abstract:
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of do** the GaN sections with Si and Ge, and we discuss the variation of free-carrier screening with the do** density and well/nanodisk size. We obser…
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In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of do** the GaN sections with Si and Ge, and we discuss the variation of free-carrier screening with the do** density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor, leading to lateral electron-hole separation. We report intersubband absorption covering 1.45 microns to 1.75 microns using Ge-doped quantum wells, with comparable performance to well-studied Si-doped planar heterostructures. We also report comparable intersubband absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing intersubband phenomena. In addition, we calculate the spectral shift of the intersubband absorption due to many body effects as a function of the do** concentration.
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Submitted 8 August, 2017; v1 submitted 11 May, 2017;
originally announced May 2017.
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Large and uniform optical emission shifts in quantum dots externally strained along their growth axis
Authors:
Petr Stepanov,
Marta Elzo Aizarna,
Joël Bleuse,
Nitin S. Malik,
Yoann Curé,
Eric Gautier,
Vincent Favre-Nicolin,
Jean-Michel Gérard,
Julien Claudon
Abstract:
We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core se…
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We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core section is homogeneous. Furthermore, we use the core material as an in situ strain gauge, yielding reliable values for the emitter energy tuning slope. This calibration technique is applied to self-assembled InAs QDs submitted to incremental tensile strain along their growth axis. In contrast to recent studies conducted on similar QDs stressed perpendicularly to their growth axis, optical spectroscopy reveals 5-10 times larger tuning slopes, with a moderate dispersion. These results highlight the importance of the stress direction to optimise QD response to applied strain, with implications both in static and dynamic regimes. As such, they are in particular relevant for the development of wavelength-tunable single photon sources or hybrid QD opto-mechanical systems.
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Submitted 22 February, 2016;
originally announced February 2016.
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Long-lived excitons in GaN/AlN nanowire heterostructures
Authors:
M. Beeler,
C. B. Lim,
P. Hille,
J. Bleuse,
J. Schörmann,
M. de la Mata,
J. Arbiol,
M. Eickhoff,
E. Monroy
Abstract:
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Do** the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range…
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GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Do** the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by do**. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts.
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Submitted 20 April, 2015; v1 submitted 24 December, 2014;
originally announced December 2014.
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Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
Authors:
Moïra Hocevar,
Le Thuy Thanh Giang,
Rudeesun Songmuang,
Martien den Hertog,
Lucien Besombes,
Joël Bleuse,
Yann-Michel Niquet,
Nikos T. Pelekanos
Abstract:
We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in l…
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We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in line with theoretical calculations. An additional contribution to this red shift arises from axial piezoelectric fields which develop inside the nanowire core due to Al fluctuations in the shell.
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Submitted 13 February, 2013;
originally announced February 2013.
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The photonic trumpet: An efficient, broadband interface between a solid-state quantum emitter and a Gaussian beam
Authors:
Mathieu Munsch,
Nitin S. Malik,
Niels Gregersen,
Joël Bleuse,
Emmanuel Dupuy,
Adrien Delga,
Jesper Mørk,
Jean-Michel Gérard,
Julien Claudon
Abstract:
We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission control provided by a single-mode photonic wire and the adiabatic expansion of this mode within a conical taper. Numerical simulations highlight the outstanding…
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We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission control provided by a single-mode photonic wire and the adiabatic expansion of this mode within a conical taper. Numerical simulations highlight the outstanding performance and robustness of this concept. As a first application in the field of quantum optics, we report the realisation of an ultra-bright single-photon source. The device, a GaAs photonic trumpet containing few InAs quantum dots, demonstrates a first-lens external efficiency of $0.75 \pm 0.1$.
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Submitted 24 September, 2012;
originally announced September 2012.
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Determination of the valence band offset at cubic CdSe/ZnTe type II heterojunctions: A combined experimental and theoretical approach
Authors:
Daniel Mourad,
Jan-Peter Richters,
Lionel Gérard,
Régis André,
Joël Bleuse,
Henri Mariette
Abstract:
We present a combined experimental and theoretical approach for the determination of the low-temperature valence band offset (VBO) at CdSe/ZnTe heterojunctions with underlying zincblende crystal structure. On the experimental side, the optical transition of the type II interface allows for a precise measurement of the type II band gap. We show how the excitation-power dependent shift of this photo…
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We present a combined experimental and theoretical approach for the determination of the low-temperature valence band offset (VBO) at CdSe/ZnTe heterojunctions with underlying zincblende crystal structure. On the experimental side, the optical transition of the type II interface allows for a precise measurement of the type II band gap. We show how the excitation-power dependent shift of this photoluminescence (PL) signal can be used for any type II system for a precise determination of the VBO. On the theoretical side, we use a refined empirical tight-binding parametrization in order to accurately reproduce the band structure and density of states around the band gap region of cubic CdSe and ZnTe and then calculate the branch point energy (also known as charge neutrality level) for both materials. Because of the cubic crystal structure and the small lattice mismatch across the interface, the VBO for the material system under consideration can then be obtained from a charge neutrality condition, in good agreement with the PL measurements.
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Submitted 30 October, 2012; v1 submitted 10 August, 2012;
originally announced August 2012.
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Near-field optical imaging with a CdSe single nanocrystal-based active tip
Authors:
Y. Sonnefraud,
N. Chevalier,
J. -F. Motte,
S. Huant,
P. Reiss,
J. Bleuse,
F. Chandezon,
M. T. Burnett,
W. Ding,
S. A. Maier
Abstract:
We report near-field scanning optical imaging with an active tip made of a single fluorescent CdSe nanocrystal attached at the apex of an optical tip. Although the images are acquired only partially because of the random blinking of the semiconductor particle, our work validates the use of such tips in ultra-high spatial resolution optical microscopy.
We report near-field scanning optical imaging with an active tip made of a single fluorescent CdSe nanocrystal attached at the apex of an optical tip. Although the images are acquired only partially because of the random blinking of the semiconductor particle, our work validates the use of such tips in ultra-high spatial resolution optical microscopy.
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Submitted 28 January, 2012;
originally announced January 2012.
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Surface effects in a semiconductor photonic nanowire and spectral stability of an embedded single quantum dot
Authors:
Inah Yeo,
Nitin S. Malik,
Mathieu Munsch,
Emmanuel Dupuy,
Joël Bleuse,
Yann-Michel Niquet,
Jean-Michel Gérard,
Julien Claudon,
Édouard Wagner,
Signe Seidelin,
Alexia Auffèves,
Jean-Philippe Poizat,
Gilles Nogues
Abstract:
We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant quantum optics experiments at the single photon level. We attribute the drift to the sticking of oxygen molecules onto the wire, which modifies the surface char…
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We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant quantum optics experiments at the single photon level. We attribute the drift to the sticking of oxygen molecules onto the wire, which modifies the surface charge and hence the electric field seen by the quantum dot. The influence of temperature and excitation laser power on this phenomenon is studied. Most importantly, we demonstrate a proper treatment of the nanowire surface to suppress the drift.
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Submitted 16 December, 2011;
originally announced December 2011.
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Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe
Authors:
A. S. Gurevich,
V. P. Kochereshko,
J. Bleuse,
H. Mariette,
A. Waag,
R. Akimoto
Abstract:
Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confir…
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Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.
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Submitted 27 April, 2011;
originally announced April 2011.
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Optical Study of GaAs quantum dots embedded into AlGaAs nanowires
Authors:
V. N. Kats,
V. P. Kochereshko,
A. V. Platonov,
T. V. Chizhova,
G. E. Cirlin,
A. D. Bouravleuv,
Yu. B. Samsonenko,
I. P. Soshnikov,
E. V. Ubyivovk,
J. Bleuse,
H. Mariette
Abstract:
We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the Al…
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We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the AlGaAs nanowires.
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Submitted 17 April, 2011;
originally announced April 2011.
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CdSe-single-nanoparticle based active tips for near-field optical microscopy
Authors:
N. Chevalier,
M. J. Nasse,
J . C. Woehl,
P. Reiss,
J. Bleuse,
F. Chandezon,
S. Huant
Abstract:
We present a method to realize active optical tips for use in near-field optics that can operate at room temperature. A metal-coated optical tip is covered with a thin polymer layer stained with CdSe nanocrystals or nanorods at low density. The time analysis of the emission rate and emission spectra of the active tips reveal that a very small number of particles - possibly down to only one - can…
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We present a method to realize active optical tips for use in near-field optics that can operate at room temperature. A metal-coated optical tip is covered with a thin polymer layer stained with CdSe nanocrystals or nanorods at low density. The time analysis of the emission rate and emission spectra of the active tips reveal that a very small number of particles - possibly down to only one - can be made active at the tip apex. This opens the way to near-field optics with a single inorganic nanoparticle as a light source.
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Submitted 21 December, 2006;
originally announced December 2006.
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Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy
Authors:
F. Rol,
S. Founta,
H. Mariette,
B. Daudin,
Le Si Dang,
J. Bleuse,
D. Peyrade,
J. -M. Gerard,
B. Gayral
Abstract:
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. Th…
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We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. This study indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size. This conclusion is further confirmed by the analysis of the decay time of the luminescence.
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Submitted 24 November, 2006;
originally announced November 2006.
