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Dynamic response and roughening of ferroelectric domain walls driven at planar electrode edges
Authors:
Guillaume Rapin,
Sophia Ehrensperger,
Cédric Blaser,
Nirvana Caballero,
Patrycja Paruch
Abstract:
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using piezoresponse force microscopy we analyse the growth and roughness of ferroelectric domains in epitaxial thin film Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$, driven by the elect…
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Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using piezoresponse force microscopy we analyse the growth and roughness of ferroelectric domains in epitaxial thin film Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$, driven by the electric fields at straight edges of planar electrodes at two different temperatures. This device relevant geometry allows us to confirm that the domain walls are well described as 1-dimensional monoaffine elastic interfaces driven in random-bond disorder. However, we observe a progressive increase of roughness as initially flat domain walls move through the disorder landscape, which could prove a significant limiting factor for racetrack-type memories using ferroelectrics.
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Submitted 22 November, 2021;
originally announced November 2021.
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Subcritical switching dynamics and humidity effects in nanoscale studies of domain growth in ferroelectric thin films
Authors:
Cédric Blaser,
Patrycja Paruch
Abstract:
Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing time, respectively, are well known, we report an additional linear dependence on relative humidity in the 28-65% range. We map out the switched domain size as a fu…
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Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing time, respectively, are well known, we report an additional linear dependence on relative humidity in the 28-65% range. We map out the switched domain size as a function of both the tip bias and the applied pulse time and describe a growth-limited regime for very short pulses and a nucleation-limited regime for very low tip bias. Using "interrupted-switching" measurements, we probe the nucleation regime with subcritical pulses and identify a surprisingly long relaxation time on the order of 100 ms, which we relate to ionic redistribution both on the surface and within the thin film itself.
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Submitted 12 January, 2015;
originally announced January 2015.
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Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices
Authors:
Cédric Blaser,
Vincent Esposito,
Patrycja Paruch
Abstract:
To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance. Directly comparing ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3 field effect transistors, we show that the two effects strongly compete, with transient charge dynamics initially masking up to 40% of…
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To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance. Directly comparing ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3 field effect transistors, we show that the two effects strongly compete, with transient charge dynamics initially masking up to 40% of the ferroelectric field effect. For applications, it is therefore crucial to maximize the quality of the ferroelectric film and the interface with the carbon nanotube to take full advantage of the switchable polarization.
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Submitted 5 June, 2013;
originally announced June 2013.
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Minimum domain size and stability in carbon nanotube-ferroelectric devices
Authors:
Cédric Blaser,
Patrycja Paruch
Abstract:
Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr0.2Ti0.8)O3 thin films was studied using different field geometries and compared to numerical simulations and theoretical predictions. With carbon nanotubes as electrodes, continuous nanodomains as small as 9 nm in radius in a 270 nm thick film could be switched, remaining stable for over 20 months. Defect pinning of domain walls app…
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Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr0.2Ti0.8)O3 thin films was studied using different field geometries and compared to numerical simulations and theoretical predictions. With carbon nanotubes as electrodes, continuous nanodomains as small as 9 nm in radius in a 270 nm thick film could be switched, remaining stable for over 20 months. Defect pinning of domain walls appears to play a key role in stabilizing such domains, below the predicted thermodynamic size limit.
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Submitted 8 October, 2012;
originally announced October 2012.
