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Current Map** of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition
Authors:
Anders V. Bjørlig,
Dennis V. Christensen,
Ricci Erlandsen,
Nini Pryds,
Beena Kalisky
Abstract:
The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic prop…
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The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic properties, but the impact on the microscopic scale, particularly of the former, remains underexplored. Here, we image the current distribution at 4.2 K in amorphous-LaAlO3/SrTiO3 using scanning superconducting-quantum-interference-device microscopy while changing the carrier density in situ using electrostatic gating and oxygen annealing. We show how potential disorder affects the current and how homogeneous 2D flow evolves into several parallel conducting channels when approaching the metal-to-insulator transition. We link this to ferroelastic domains and oxygen vacancies. This has important consequences for micro- and nanoscale devices with low carrier density and fundamental studies on quantum effects in oxides.
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Submitted 30 June, 2022;
originally announced June 2022.
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Magnetic memory and spontaneous vortices in a van der Waals superconductor
Authors:
Eylon Persky,
Anders V. Bjørlig,
Irena Feldman,
Avior Almoalem,
Ehud Altman,
Erez Berg,
Itamar Kimchi,
Jonathan Ruhman,
Amit Kanigel,
Beena Kalisky
Abstract:
Doped Mott insulators exhibit some of the most intriguing quantum phases of matter, including quantum spin-liquids, unconventional superconductors, and non-Fermi liquid metals. Such phases often arise when itinerant electrons are close to a Mott insulating state, and thus experience strong spatial correlations. Proximity between different layers of van der Waals heterostructures naturally realizes…
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Doped Mott insulators exhibit some of the most intriguing quantum phases of matter, including quantum spin-liquids, unconventional superconductors, and non-Fermi liquid metals. Such phases often arise when itinerant electrons are close to a Mott insulating state, and thus experience strong spatial correlations. Proximity between different layers of van der Waals heterostructures naturally realizes a platform for experimentally studying the relationship between localized, correlated electrons and itinerant electrons. Here, we explore this relationship by studying the magnetic landscape of 4Hb-TaS2, which realizes an alternate stack of a candidate spin liquid and a superconductor. We report on a spontaneous vortex phase whose vortex density can be trained in the normal state. We show that time reversal symmetry is broken above Tc, indicating the presence of a magnetic phase independent of the superconductor. Strikingly, this phase does not generate detectable magnetic signals. We use scanning superconducting quantum interference device (SQUID) microscopy to show that it is incompatible with ferromagnetic ordering. The discovery of this new form of hidden magnetism illustrates how combining superconductivity with a strongly correlated system can lead to new, unexpected physics.
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Submitted 15 June, 2022;
originally announced June 2022.
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Self-formed $LaAlO_3/SrTiO_3$ Micro-Membranes
Authors:
Alessia Sambri,
Mario Scuderi,
Anita Guarino,
Emiliano Di Gennaro,
Ricci Erlandsen,
Rasmus T. Dahm,
Anders V. Bjørlig,
Dennis V. Christensen,
Roberto Di Capua,
Bartolomeo Della Ventura,
Umberto Scotti di Uccio,
Salvatore Mirabella,
Giuseppe Nicotra,
Corrado Spinella,
Thomas S. Jespersen,
Fabio Miletto Granozio
Abstract:
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full mergi…
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Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full merging of these two fields requires nevertheless the realization of $LaAlO_3/SrTiO_3$ heterostructures in the form of freestanding membranes. Here we show a completely new method for obtaining oxide hetero-membranes with micrometer lateral dimensions. Unlike traditional thin-film-based techniques developed for semiconductors and recently extended to oxides, the concept we demonstrate does not rely on any sacrificial layer and is based instead on pure strain engineering. We monitor through both real-time and post-deposition analyses, performed at different stages of growth, the strain relaxation mechanism leading to the spontaneous formation of curved hetero-membranes. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each of the layers showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. Our samples exhibit metallic conductivity and electrostatic field effect similar to 2D-electron systems in bulk heterostructures. Our results open a new path for adding oxide functionality into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics.
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Submitted 17 September, 2020; v1 submitted 15 September, 2020;
originally announced September 2020.
