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High-speed sensing of RF signals with phase change materials
Authors:
Ranjan Kumar Patel,
Yifan Yuan,
Ravindra Singh Bisht,
Ivan Seskar,
Narayan Mandayam,
Shriram Ramanathan
Abstract:
RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a quantum material that has garnered significant interest for its insulator-to-metal transition. We find the electrical resistance of both stoichiometric as well a…
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RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a quantum material that has garnered significant interest for its insulator-to-metal transition. We find the electrical resistance of both stoichiometric as well as off-stoichiometric vanadium oxide films can be modulated with RF wave exposures from a distance. The response of the materials to the RF waves can be enhanced by either increasing the power received by the sample or reducing channel separation. We report a significant ~73% drop in resistance with a 5 μm channel gap of the VO2 film at a characteristic response time of 16 microseconds. The peak sensitivity is proximal to the phase transition temperature boundary that can be engineered via do** and crystal chemistry. Dynamic sensing measurements highlight the films' rapid response and broad-spectrum sensitivity. Engineering electronic phase boundaries in correlated electron systems could offer new capabilities in emerging communication technologies.
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Submitted 11 December, 2023;
originally announced December 2023.
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Hydrogen-induced tunable remanent polarization in a perovskite nickelate
Authors:
Yifan Yuan,
Michele Kotiuga,
Tae Joon Park,
Yuanyuan Ni,
Arnob Saha,
Hua Zhou,
Jerzy T. Sadowski,
Abdullah Al-Mahboob,
Haoming Yu,
Kai Du,
Minning Zhu,
Sunbin Deng,
Ravindra S. Bisht,
Xiao Lyu,
Chung-Tse Michael Wu,
Peide D. Ye,
Abhronil Sengupta,
Sang-Wook Cheong,
Xiaoshan Xu,
Karin M. Rabe,
Shriram Ramanathan
Abstract:
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential ca…
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Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trap** of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H do**. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing novel ferroelectric materials and electrets using light-ion do**.
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Submitted 20 November, 2023;
originally announced November 2023.
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Temporal credit assignment for one-shot learning utilizing a phase transition material
Authors:
Alessandro R. Galloni,
Yifan Yuan,
Minning Zhu,
Haoming Yu,
Ravindra S. Bisht,
Chung-Tse Michael Wu,
Christine Grienberger,
Shriram Ramanathan,
Aaron D. Milstein
Abstract:
Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and var…
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Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and varied timescales of neuronal signaling. Previous work has shown that the all-or-none spiking behavior of neurons can be mimicked by threshold switches utilizing phase transitions. Here we demonstrate that devices based on a prototypical metal-insulator-transition material, vanadium dioxide (VO2), can be dynamically controlled to access a continuum of intermediate resistance states. Furthermore, the timescale of their intrinsic relaxation can be configured to match a range of biologically-relevant timescales from milliseconds to seconds. We exploit these device properties to emulate three aspects of neuronal analog computation: fast (~1 ms) spiking in a neuronal soma compartment, slow (~100 ms) spiking in a dendritic compartment, and ultraslow (~1 s) biochemical signaling involved in temporal credit assignment for a recently discovered biological mechanism of one-shot learning. Simulations show that an artificial neural network using properties of VO2 devices to control an agent navigating a spatial environment can learn an efficient path to a reward in up to 4 fold fewer trials than standard methods. The phase relaxations described in our study may be engineered in a variety of materials, and can be controlled by thermal, electrical, or optical stimuli, suggesting further opportunities to emulate biological learning.
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Submitted 29 September, 2023;
originally announced October 2023.
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Simulation study of various factors affecting the performance of Vertical Organic Field-Effect Transistors
Authors:
Ramesh Singh Bisht,
Pramod Kumar
Abstract:
Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with low-cost techniques which reduce the high processing costs and can also operate at high current density and relatively higher frequencies. To further improve t…
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Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with low-cost techniques which reduce the high processing costs and can also operate at high current density and relatively higher frequencies. To further improve the performance, high current density, and operating frequency the physics of charge carrier transport should be understood well with the simulation. The main problem with VOFET is the high off-current which is inevitable due to conduction from source to drain contact. There have been many efforts in reducing the off-state current by the addition of an insulating layer on top of the source electrode, which further increases the complexity and cost of processing. Simulations based on device geometry, contact barriers, and organic semiconductor parameters are carried out to study the charge carrier transport in VOFET. The simulation results show that the most important factor to enhance the performance is the device geometry or architecture, which requires a specific fill factor, a ratio between the exposed gate dielectric, and the total length with the source electrode. Optimized VOFET architecture is then simulated for variation in contact barrier and semiconductor parameters, which show some enhancement in performance but also a rise in off-state current density.
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Submitted 23 January, 2023;
originally announced January 2023.
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Concomitant appearance of conductivity and superconductivity in (111)LaAlO3/SrTiO3 interface with metal cap**
Authors:
R. S. Bisht,
M. Mograbi,
P. K. Rout,
G. Tuvia,
Y. Dagan,
Hyeok Yoon,
A. G. Swartz,
H. Y. Hwang,
L. L. Li,
R. Pentcheva
Abstract:
In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn t…
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In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn the interface from insulating to conducting and even superconducting. We show that tc decreases to 3ML when depositing a cobalt over-layer (cap**) and 6ML for platinum cap**. The latter result contrasts with the (100) interface, where platinum cap** increases tc beyond the bare interface. The observed threshold for conductivity for the bare and the metal-capped interfaces is confirmed by our density functional theory calculations. Interestingly, for (111) SrTiO3/LaAlO3/Metal interfaces, conductivity appears concomitantly with superconductivity in contrast with the (100) SrTiO3/LaAlO3/Metal interfaces where tc is smaller than the critical thickness for superconductivity. We attribute this dissimilarity to the different orbital polarization of e'g for the (111) versus dxy for the (001) interface.
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Submitted 19 July, 2021; v1 submitted 14 February, 2021;
originally announced February 2021.
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Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films
Authors:
Ravindra Singh Bisht,
Gopi Nath Daptary,
Aveek Bid,
A. K. Raychaudhuri
Abstract:
We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resist…
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We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO.
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Submitted 24 July, 2020;
originally announced July 2020.
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Observation of decoupling of electrons from phonon bath close to a correlation driven metal-insulator transition
Authors:
Sudipta Chatterjee,
Ravindra Singh Bisht,
V. R. Reddy,
A. K. Raychaudhuri
Abstract:
We observed that close to a Mott transition, over a small temperature range, the predominance of slow relaxations leads to decoupling of electrons from the thermal bath. This has been established by observation of large deviation of the thermal noise in the films of Mott system $NdNiO_{3}$ from the canonical Johnson-Nyquist value of $4k_{B}TR$ close to the transition. It is suggested that such a l…
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We observed that close to a Mott transition, over a small temperature range, the predominance of slow relaxations leads to decoupling of electrons from the thermal bath. This has been established by observation of large deviation of the thermal noise in the films of Mott system $NdNiO_{3}$ from the canonical Johnson-Nyquist value of $4k_{B}TR$ close to the transition. It is suggested that such a large noise arise from small isolated pockets of nanometric metallic phases (estimated size $\sim$ 15-20 nm) within the insulating phase with the charging energy as the control parameter.
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Submitted 5 November, 2020; v1 submitted 14 July, 2020;
originally announced July 2020.
