Showing 1–12 of 12 results for author: Bischoff, L

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

Authors: M. Hollenbach, N. Klingner, P. Mazarov, W. Pilz, A. Nadzeyka, F. Mayer, N. V. Abrosimov, L. Bischoff, G. Hlawacek, M. Helm, G. V. Astakhov

Abstract: Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creat… ▽ More Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity. △ Less

Submitted 30 April, 2024; originally announced April 2024.

Comments: 7 pages, 5 figures

Ultralong-term high-density data storage with atomic defects in SiC

Authors: M. Hollenbach, C. Kasper, D. Erb, L. Bischoff, G. Hlawacek, H. Kraus, W. Kada, T. Ohshima, M. Helm, S. Facsko, V. Dyakonov, G. V. Astakhov

Abstract: There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we… ▽ More There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation. △ Less

Submitted 28 October, 2023; originally announced October 2023.

Comments: 8 pages, 4 figures

Journal ref: Adv. Funct. Mater. 23, 2313413 (2024)

Roadmap for focused ion beam technologies

Authors: Katja Höflich, Gerhard Hobler, Frances I. Allen, Tom Wirtz, Gemma Rius, Lisa McElwee-White, Arkady V. Krasheninnikov, Matthias Schmidt, Ivo Utke, Nico Klingner, Markus Osenberg, Rosa Córdoba, Flyura Djurabekova, Ingo Manke, Philip Moll, Mariachiara Manoccio, José Marıa De Teresa, Lothar Bischoff, Johann Michler, Olivier De Castro, Anne Delobbe, Peter Dunne, Oleksandr V. Dobrovolskiy, Natalie Frese, Armin Gölzhäuser , et al. (7 additional authors not shown)

Abstract: The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in mat… ▽ More The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques and applications. By viewing FIB developments through the lens of the various research communities, we aim to identify future pathways for ion source and instrumentation development as well as emerging applications, and the scope for improved understanding of the complex interplay of ion-solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interests and will support future fruitful interactions connecting tool development, experiment and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout. △ Less

Submitted 6 October, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: This publication is based upon work from the COST Action FIT4NANO CA19140, supported by COST (European Cooperation in Science and Technology) https://www.cost.eu/. Financial support from COST Action CA19140 is acknowledged http://www.fit4nano.eu/ Version 3 has many text and language edits as well as layout tuning but no substantial new content

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

Authors: M. Hollenbach, N. Klingner, N. S. Jagtap, L. Bischoff, C. Fowley, U. Kentsch, G. Hlawacek, A. Erbe, N. V. Abrosimov, M. Helm, Y. Berencén, G. V. Astakhov

Abstract: A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been re… ▽ More A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm. △ Less

Submitted 27 April, 2022; originally announced April 2022.

Comments: 8 pages, 4 figures

Journal ref: Nat. Commun. 13, 7683 (2022)

Investigation of the effects of customized electrodes on capacitively coupled radio frequency microplasma jets using emission spectroscopy and laser diagnostics

Authors: Lena Bischoff

Abstract: The aim of this work is to investigate the effects of customized electrodes on the electron heating dynamics of the COST-Jet. The COST-Jet is operated with an applied sinusoidal alternating voltage of 13.56 MHz. With the help of phase resolved optical emission spectroscopy (PROES), the electron heating dynamics in the plasma discharge for customized electrodes, gas mixtures and applied voltage amp… ▽ More The aim of this work is to investigate the effects of customized electrodes on the electron heating dynamics of the COST-Jet. The COST-Jet is operated with an applied sinusoidal alternating voltage of 13.56 MHz. With the help of phase resolved optical emission spectroscopy (PROES), the electron heating dynamics in the plasma discharge for customized electrodes, gas mixtures and applied voltage amplitudes are examined. The absolute densities of atomic oxygen are then examined using two photon laser induced fluorescence spectroscopy (TALIF) in order to obtain information on the production of reactive particles depending on the different electrode materials and structures. △ Less

Submitted 28 March, 2021; originally announced April 2021.

Comments: Masters thesis, in German

Electron heating mode transitions in radio-frequency driven micro atmospheric pressure plasma jets in He/O$_{2}$: A fluid dynamics approach

Authors: Yue Liu, Ihor Korolov, Torben Hemke, Lena Bischoff, Gerrit Hübner, Julian Schulze, Thomas Mussenbrock

Abstract: A two-dimensional fluid model is used to investigate the electron heating dynamics and the production of neutral species in a capacitively coupled radio-frequency micro atmospheric pressure helium plasma jet -- specifically the COST jet -- with a small oxygen admixture. Electron heating mode transitions are found to be induced by varying the driving voltage amplitude and the O$_2$ concentration nu… ▽ More A two-dimensional fluid model is used to investigate the electron heating dynamics and the production of neutral species in a capacitively coupled radio-frequency micro atmospheric pressure helium plasma jet -- specifically the COST jet -- with a small oxygen admixture. Electron heating mode transitions are found to be induced by varying the driving voltage amplitude and the O$_2$ concentration numerically and experimentally. The helium metastable density, and the charged species densities are highly relevant to the electron heating dynamics. By analyzing the creation and destruction mechanisms of the negative ions, we find that the generation of negative ions strongly depends on the O$_2$ concentration. The increase of the electronegativity with the increasing O$_2$ concentration leads to an enhancement of the bulk drift electric field. The distributions of the different neutral species densities along the direction of the gas flow inside the jet, as well as in the effluent differ a lot due to the relevant chemical reaction rates and the effect of the gas flow. The simulated results show that a fluid model can be an effective tool for qualitative investigations of micro atmospheric pressure plasma jets. △ Less

Submitted 24 February, 2021; v1 submitted 7 February, 2021; originally announced February 2021.

Probing ultrafast laser plasma processes inside solids with resonant small-angle X-ray scattering

Authors: Lennart Gaus, Lothar Bischoff, Michael Bussmann, Eric Cunningham, Chandra B. Curry, Eric Galtier, Maxence Gauthier, Alejandro Laso García, Marco Garten, Siegfried Glenzer, Jörg Grenzer, Christian Gutt, Nicholas J. Hartley, Lingen Huang, Uwe Hübner, Dominik Kraus, Hae Ja Lee, Emma E. McBride, Josefine Metzkes-Ng, Bob Nagler, Motoaki Nakatsutsumi, Jan Nikl, Masato Ota, Alexander Pelka, Irene Prencipe , et al. (11 additional authors not shown)

Abstract: Extreme states of matter exist throughout the universe e.g. inside planetary cores, stars or astrophysical jets. Such conditions are generated in the laboratory in the interaction of powerful lasers with solids, and their evolution can be probed with femtosecond precision using ultra-short X-ray pulses to study laboratory astrophysics, laser-fusion research or compact particle acceleration. X-ray… ▽ More Extreme states of matter exist throughout the universe e.g. inside planetary cores, stars or astrophysical jets. Such conditions are generated in the laboratory in the interaction of powerful lasers with solids, and their evolution can be probed with femtosecond precision using ultra-short X-ray pulses to study laboratory astrophysics, laser-fusion research or compact particle acceleration. X-ray scattering (SAXS) patterns and their asymmetries occurring at X-ray energies of atomic bound-bound transitions contain information on the volumetric nanoscopic distribution of density, ionization and temperature. Buried heavy ion structures in high intensity laser irradiated solids expand on the nanometer scale following heat diffusion, and are heated to more than 2 million Kelvin. These experiments demonstrate resonant SAXS with the aim to better characterize dynamic processes in extreme laboratory plasmas. △ Less

Submitted 14 December, 2020; originally announced December 2020.

Boron Liquid Metal Alloy Ion Sources For Special FIB Applications

Authors: Lothar Bischoff, Nico Klingner, Paul Mazarov, Wolfgang Pilz, Florian Meyer

Abstract: Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototy** on the micro and nanometer scale and below. Among other concepts, liquid metal alloy ion sources (LMAIS) are one of the alternatives to conventional gallium beams to extend the FIB application field. To meet the rising demand f… ▽ More Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototy** on the micro and nanometer scale and below. Among other concepts, liquid metal alloy ion sources (LMAIS) are one of the alternatives to conventional gallium beams to extend the FIB application field. To meet the rising demand for light ions, different boron containing alloys were investigated in this work. A promising solution was found in a Co31Nd64B5 based LMAIS which will be introduced in more detail. Besides cobalt as a ferromagnetic element and the rare earth element neodymium, boron in particular is of interest for special FIB applications like local p-type do**, for which resolution of about 30 nm has been achieved so far. △ Less

Submitted 27 April, 2020; originally announced April 2020.

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

Authors: Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek

Abstract: For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kine… ▽ More For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Comments: 10 pages, 6 figures

Journal ref: Beilstein Journal of Nanotechnology 9 (2018) 2883-2892

The role of the internal demagnetizing field in a surface-modulated magnonic crystal

Authors: Manuel Langer, Falk Röder, Rodolfo A. Gallardo, Tobias Schneider, Sven Stienen, Christophe Gatel, René Hübner, Lothar Bischoff, Kilian Lenz, Jürgen Lindner, Pedro Landeros, Jürgen Fassbender

Abstract: Magnonic crystals with locally alternating properties and specific periodicities exhibit interesting effects, such as a multitude of different spin-wave states and large band gaps. This work aims for demonstrating and understanding the key role of local demagnetizing fields in such systems. To achieve this, hybrid structures are investigated consisting of a continuous thin film with a stripe modul… ▽ More Magnonic crystals with locally alternating properties and specific periodicities exhibit interesting effects, such as a multitude of different spin-wave states and large band gaps. This work aims for demonstrating and understanding the key role of local demagnetizing fields in such systems. To achieve this, hybrid structures are investigated consisting of a continuous thin film with a stripe modulation on top favorable due to the adjustability of the magnonic effects with the modulation size. For a direct access to the spin dynamics, a magnonic crystal was reconstructed from `bottom-up', i.e., the structural shape as well as the internal field landscape of the structure were experimentally obtained on the nanoscale using electron holography. Subsequently, both properties were utilized to perform dynamic response calculations. The simulations yield the frequency-field dependence as well as the angular dependence of spin waves in a magnonic crystal and reveal the governing role of the internal field landscape around the backward-volume geometry. The complex angle-dependent spin-wave behavior is described for a 360 degree in-plane rotation of an external field by connecting the internal field landscape with the individual spin-wave localization. △ Less

Submitted 20 October, 2016; v1 submitted 1 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 95, 184405 (2017)

Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam

Authors: B. N. Dev, N. Banu, J. Fassbender, J. Grenzer, N. Schell, L. Bischoff, R. Groetzschel, J. McCord

Abstract: Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr ef… ▽ More Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a Ni0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 micrometer wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favor an alignment of magnetization parallel to the stripe axis, the opposite behavior is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behavior. △ Less

Submitted 14 July, 2015; originally announced July 2015.

Comments: 12 pages, 12 figures (Figure numbers up to 7)

Concept of deterministic single ion do** with sub-nm spatial resolution

Authors: J. Meijer, T. Vogel, B. Burchard, I. Rangelow, L. Bischoff, J. Wrachtrup, M. Domhan, F. Jelezko, W. Schnitzler, S. A. Schulz, K. Singer, F. Schmidt-Kaler

Abstract: We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all hemical elements. The deterministic implantation of single phosphor or nitrogen atoms i… ▽ More We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all hemical elements. The deterministic implantation of single phosphor or nitrogen atoms is interesting for the fabrication of scalable solid state quantum computers, in particular for silicon and diamond based schemes. A wide range of further applications is expected for the fabrication of nano and sub-nano electric devices. △ Less

Submitted 7 March, 2006; v1 submitted 31 August, 2005; originally announced August 2005.