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Comparison between InAs-based and GaSb-based Interband cascade lasers with hybrid superlattice plasmon-enhanced claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
S. Estevam,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 μm. They employ a hybrid cladding architecture with the same geometry and inner claddings consisting of InAs/AlSb superlattices but different outer claddings: The InAs-based ICL employs plasmon enhanced n-type doped InAs layers while the GaSb-based ICL…
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We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 μm. They employ a hybrid cladding architecture with the same geometry and inner claddings consisting of InAs/AlSb superlattices but different outer claddings: The InAs-based ICL employs plasmon enhanced n-type doped InAs layers while the GaSb-based ICL employs plasmon-enhanced n-type doped InAs_0.915 Sb_0.085 claddings lattice matched to GaSb. Due to the lower refractive index of n+-InAsSb (n=2.88) compared to n+-InAs (n=3.10) and higher refractive index of separate confinement layers, the GaSb-based ICL shows a 3.8 % higher optical mode confinement in the active region compared to the InAs-based ICL. Experimentally, the GaSb-based ICL shows a 17.3 % lower threshold current density in pulsed operation at room temperature. Also presented is the influence of geometry and do** variation on confinement factors and calculated free carrier absorption losses in the GaSb-based ICL.
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Submitted 5 July, 2024; v1 submitted 11 March, 2024;
originally announced March 2024.
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5.0 $μ$m emitting Interband Cascade Lasers with Superlattice and Bulk AlGaAsSb Claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We present a comparison between interband cascade lasers (ICLs) with a 6-stage active region emitting at 5 $μ$m with AlSb/InAs superlattice claddings and with bulk Al_0.85 Ga_0.15 As_0.07 Sb_0.93 claddings. Utilizing bulk AlGaAsSb claddings with their lower refractive index compared to the more commonly used AlSb/InAs superlattice claddings, the mode-confinement in the active region increases by 1…
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We present a comparison between interband cascade lasers (ICLs) with a 6-stage active region emitting at 5 $μ$m with AlSb/InAs superlattice claddings and with bulk Al_0.85 Ga_0.15 As_0.07 Sb_0.93 claddings. Utilizing bulk AlGaAsSb claddings with their lower refractive index compared to the more commonly used AlSb/InAs superlattice claddings, the mode-confinement in the active region increases by 14.4% resulting in an improvement of the lasing threshold current density. For broad area laser and under pulsed excitation, the ICL with AlGaAsSb claddings shows a lower threshold current density of J_th=396 A/cm$^2$ compared to J_th=521 A/cm$^2$ for the reference ICL with superlattice claddings. Additionally, a higher characteristic temperature was obtained for the ICL with bulk claddings. A measured pulsed operation is observed up to 65 C.
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Submitted 11 June, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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GaSb-based Interband Cascade Laser with hybrid superlattice plasmon-enhanced claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We present an interband cascade laser (ICL) emitting at 5.2 μm consisting of an 8-stage active region and a hybrid cladding composed of outer plasmon-enhanced InAs_0.915 Sb_0.085 and inner InAs/AlSb superlattice claddings. The hybrid cladding architecture shows an increase in mode-confinement in the active region by 11.2 % according to the simulation. This is a consequence of a significantly lower…
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We present an interband cascade laser (ICL) emitting at 5.2 μm consisting of an 8-stage active region and a hybrid cladding composed of outer plasmon-enhanced InAs_0.915 Sb_0.085 and inner InAs/AlSb superlattice claddings. The hybrid cladding architecture shows an increase in mode-confinement in the active region by 11.2 % according to the simulation. This is a consequence of a significantly lower refractive index of plasmon-enhanced claddings. The threshold current density is 242 A/cm^2 in pulsed operation at room temperature. This is the lowest value reported to date for ICLs emitting at wavelengths longer than 5 μm. We also report close to record value threshold power density of 840 W/cm^2 for ICLs at such wavelengths.
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Submitted 11 June, 2024; v1 submitted 30 January, 2024;
originally announced January 2024.
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Semiconductor-based electron flying qubits: Review on recent progress accelerated by numerical modelling
Authors:
Hermann Edlbauer,
Junliang Wang,
Thierry Crozes,
Pierre Perrier,
Seddik Ouacel,
Clément Geffroy,
Giorgos Georgiou,
Eleni Chatzikyriakou,
Antonio Lacerda-Santos,
Xavier Waintal,
D. Christian Glattli,
Preden Roulleau,
Jayshankar Nath,
Masaya Kataoka,
Janine Splettstoesser,
Matteo Acciai,
Maria Cecilia da Silva Figueira,
Kemal Öztas,
Alex Trellakis,
Thomas Grange,
Oleg M. Yevtushenko,
Stefan Birner,
Christopher Bäuerle
Abstract:
The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological…
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The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological challenges of flying qubits that are currently faced by academia and quantum enterprises, we underline the relevance of interdisciplinary cooperation to move emerging quantum industry forward. The review consists of two main sections:
Pathways towards the electron flying qubit: We address three routes of single-electron transport in GaAs-based devices focusing on surface acoustic waves, hot-electron emission from quantum dot pumps and Levitons. For each approach, we discuss latest experimental results and point out how numerical simulations facilitate engineering the electron flying qubit.
Numerical modelling of quantum devices: We review the full stack of numerical simulations needed for fabrication of the flying qubits. Choosing appropriate models, examples of basic quantum mechanical simulations are explained in detail. We discuss applications of open-source (KWANT) and the commercial (nextnano) platforms for modelling the flying qubits. The discussion points out the large relevance of software tools to design quantum devices tailored for efficient operation.
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Submitted 4 July, 2022;
originally announced July 2022.
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Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach
Authors:
Eleni Chatzikyriakou,
Junliang Wang,
Lucas Mazzella,
Antonio Lacerda-Santos,
Maria Cecilia da Silva Figueira,
Alex Trellakis,
Stefan Birner,
Thomas Grange,
Christopher Bäuerle,
Xavier Waintal
Abstract:
In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work, we assess the predictive power of these simulations by comparing the results of a single model with a large experimental data set of 110 devices with 48 differe…
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In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work, we assess the predictive power of these simulations by comparing the results of a single model with a large experimental data set of 110 devices with 48 different geometries. The devices are quantum point contacts of various shapes and sizes made with electrostatic gates deposited on top of a high mobility GaAs/GaAlAs two dimensional electron gas. We study the pinch-off voltages applied on the gates to deplete the two-dimensional electron gas in various spatial positions. We argue that the pinch-off voltages are a very robust signature of the charge distribution in the device. The large experimental data set allows us to critically review the modeling and arrive at a robust one-parameter model that can be calibrated in situ, a crucial step for making predictive simulations.
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Submitted 13 November, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
Authors:
David Stark,
Muhammad Mirza,
Luca Persichetti,
Michele Montanari,
Sergej Markmann,
Mattias Beck,
Thomas Grange,
Stefan Birner,
Michele Virgilio,
Chiara Ciano,
Michele Ortolani,
Cedric Corley,
Giovanni Capellini,
Luciana Di Gaspare,
Monica De Seta,
Douglas J. Paul,
Jérôme Faist,
Giacomo Scalari
Abstract:
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active regio…
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We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
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Submitted 14 January, 2021;
originally announced January 2021.
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Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
Authors:
T. Grange,
S. Mukherjee,
G. Capellini,
M. Montanari,
L. Persichetti,
L. Di Gaspare,
S. Birner,
A. Attiaoui,
O. Moutanabbir,
M. Virgilio,
M. De Seta
Abstract:
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant…
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We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration.
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Submitted 24 April, 2020; v1 submitted 3 February, 2020;
originally announced February 2020.
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Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
Authors:
T. Grange,
D. Stark,
G. Scalari,
J. Faist,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
M. Ortolani,
D. J. Paul,
G. Capellini,
S. Birner,
M. Virgilio
Abstract:
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with…
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n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights.
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Submitted 30 November, 2018;
originally announced November 2018.
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Negative quantum capacitance in graphene nanoribbons with lateral gates
Authors:
R. Reiter,
U. Derra,
S. Birner,
B. Terrés,
F. Libisch,
J. Burgdörfer,
C. Stampfer
Abstract:
We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the overall back gate capacitive coupling. Most interestingly, we find a complex interplay between quantum capacitance effects in the graphene nanoribbon and the l…
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We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the overall back gate capacitive coupling. Most interestingly, we find a complex interplay between quantum capacitance effects in the graphene nanoribbon and the lateral graphene side gates, giving rise to an unconventional negative quantum capacitance. The emerging non-linear capacitive couplings are investigated in detail. The experimentally relevant relative lever arm, the ratio between the coupling of the different gate structures, is discussed.
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Submitted 23 January, 2014; v1 submitted 19 December, 2013;
originally announced December 2013.
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Driving Perpendicular Heat Flow: Ambipolar Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling
Authors:
Chuanle Zhou,
S. Birner,
Yang Tang,
K. Heinselman,
M. Grayson
Abstract:
Whereas thermoelectric performance is normally limited by the figure of merit ZT, transverse thermoelectrics can achieve arbitrarily large temperature differences in a single leg even with inferior ZT by being geometrically tapered. We introduce a band-engineered transverse thermoelectric with p-type Seebeck in one direction and n-type orthogonal, resulting in off-diagonal terms that drive heat fl…
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Whereas thermoelectric performance is normally limited by the figure of merit ZT, transverse thermoelectrics can achieve arbitrarily large temperature differences in a single leg even with inferior ZT by being geometrically tapered. We introduce a band-engineered transverse thermoelectric with p-type Seebeck in one direction and n-type orthogonal, resulting in off-diagonal terms that drive heat flow transverse to electrical current. Such materials are advantageous for microscale devices and cryogenic temperatures -- exactly the regimes where standard longitudinal thermoelectrics fail. InAs/GaSb type II superlattices are shown to have the appropriate band structure for use as a transverse thermoelectric.
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Submitted 21 February, 2013;
originally announced February 2013.
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Valley degeneracy in biaxially strained aluminum arsenide quantum wells
Authors:
S. Prabhu-Gaunkar,
S. Birner,
S. Dasgupta,
C. Knaak,
M. Grayson
Abstract:
This paper details a complete formalism for calculating electron subband energy and degeneracy in strained multi-valley quantum wells grown along any orientation with explicit results for the AlAs quantum well case. A standardized rotation matrix is defined to transform from the conventional- cubic-cell basis to the quantum-well-transport basis whereby effective mass tensors, valley vectors, strai…
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This paper details a complete formalism for calculating electron subband energy and degeneracy in strained multi-valley quantum wells grown along any orientation with explicit results for the AlAs quantum well case. A standardized rotation matrix is defined to transform from the conventional- cubic-cell basis to the quantum-well-transport basis whereby effective mass tensors, valley vectors, strain matrices, anisotropic strain ratios, and scattering vectors are all defined in their respective bases. The specific cases of (001)-, (110)-, and (111)-oriented aluminum arsenide (AlAs) quantum wells are examined, as is the unconventional (411) facet, which is of particular importance in AlAs literature. Calculations of electron confinement and strain in the (001), (110), and (411) facets determine the critical well width for crossover from double- to single-valley degeneracy in each system. The notation is generalized to include miscut angles, and can be adapted to other multi-valley systems. To help classify anisotropic inter-valley scattering events, a new primitive unit cell is defined in momentum space which allows one to distinguish purely in-plane inter-valley scattering events from those that requires an out-of-plane momentum scattering component.
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Submitted 30 August, 2011; v1 submitted 2 September, 2010;
originally announced September 2010.
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Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass
Authors:
S. Dasgupta,
S. Birner,
C. Knaak,
M. Bichler,
A. Fontcuberta i Morral,
G. Abstreiter,
M. Grayson
Abstract:
We studied a do** series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Åwide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths $W$ greater than 53 Å. Below this, double-valley occupation is predicted such tha…
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We studied a do** series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Åwide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths $W$ greater than 53 Å. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X-valley of AlAs.
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Submitted 23 July, 2008;
originally announced July 2008.
