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Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy
Authors:
Kathy Azizie,
Felix V. E. Hensling,
Cameron A. Gorsak,
Yunjo Kim,
Daniel M. Dryden,
M. K. Indika Senevirathna,
Selena Coye,
Shun-Li Shang,
Jacob Steele,
Patrick Vogt,
Nicholas A. Parker,
Yorick A. Birkhölzer,
Jonathan P. McCandless,
Debdeep Jena,
Huili G. Xing,
Zi-Kui Liu,
Michael D. Williams,
Andrew J. Green,
Kelson Chabak,
Adam T. Neal,
Shin Mou,
Michael O. Thompson,
Hari P. Nair,
Darrell G. Schlom
Abstract:
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti…
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We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h.
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Submitted 22 December, 2022;
originally announced December 2022.
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High-strain-induced local modification of the electronic properties of VO$_2$ thin films
Authors:
Yorick A. Birkhölzer,
Kai Sotthewes,
Nicolas Gauquelin,
Lars Riekehr,
Daen Jannis,
Emma van der Minne,
Yibin Bu,
Johan Verbeeck,
Harold J. W. Zandvliet,
Gertjan Koster,
Guus Rijnders
Abstract:
Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the…
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Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue towards mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surfacelayer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.
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Submitted 13 October, 2022;
originally announced October 2022.
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Direct observation of a dynamical glass transition in a nanomagnetic artificial Hopfield network
Authors:
Michael Saccone,
Francesco Caravelli,
Kevin Hofhuis,
Sergii Parchenko,
Yorick A. Birkhölzer,
Scott Dhuey,
Armin Kleibert,
Sebastiaan van Dijken,
Cristiano Nisoli,
Alan Farhan
Abstract:
Spin glasses, generally defined as disordered systems with randomized competing interactions, are a widely investigated complex system. Theoretical models describing spin glasses are broadly used in other complex systems, such as those describing brain function, error-correcting codes, or stock-market dynamics. This wide interest in spin glasses provides strong motivation to generate an artificial…
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Spin glasses, generally defined as disordered systems with randomized competing interactions, are a widely investigated complex system. Theoretical models describing spin glasses are broadly used in other complex systems, such as those describing brain function, error-correcting codes, or stock-market dynamics. This wide interest in spin glasses provides strong motivation to generate an artificial spin glass within the framework of artificial spin ice systems. Here, we present the experimental realization of an artificial spin glass consisting of dipolar coupled single-domain Ising-type nanomagnets arranged onto an interaction network that replicates the aspects of a Hopfield neural network. Using cryogenic x-ray photoemission electron microscopy (XPEEM), we performed temperature-dependent imaging of thermally driven moment fluctuations within these networks and observed characteristic features of a two-dimensional Ising spin glass. Specifically, the temperature dependence of the spin glass correlation function follows a power law trend predicted from theoretical models on two-dimensional spin glasses. Furthermore, we observe clear signatures of the hard to observe rugged spin glass free energy in the form of sub-aging, out of equilibrium autocorrelations and a transition from stable to unstable dynamics.
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Submitted 4 February, 2022;
originally announced February 2022.
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Giant strain gradient elasticity in SrTiO3 membranes: bending versus stretching
Authors:
Varun Harbola,
Samuel Crossley,
Seung Sae Hong,
Di Lu,
Yorick A. Birkholzer,
Yasuyuki Hikita,
Harold Y. Hwang
Abstract:
Young's modulus determines the mechanical loads required to elastically stretch a material, and also, the loads required to bend it, given that bending stretches one surface while compressing the opposite one. Flexoelectric materials have the additional property of becoming electrically polarized when bent. While numerous studies have characterized this flexoelectric coupling, its impact on the me…
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Young's modulus determines the mechanical loads required to elastically stretch a material, and also, the loads required to bend it, given that bending stretches one surface while compressing the opposite one. Flexoelectric materials have the additional property of becoming electrically polarized when bent. While numerous studies have characterized this flexoelectric coupling, its impact on the mechanical response, due to the energy cost of polarization upon bending, is largely unexplored. This intriguing contribution of strain gradient elasticity is expected to become visible at small length scales where strain gradients are geometrically enhanced, especially in high permittivity insulators. Here we present nano-mechanical measurements of freely suspended SrTiO3 membrane drumheads. We observe a striking non-monotonic thickness dependence of Young's modulus upon small deflections. Furthermore, the modulus inferred from a predominantly bending deformation is three times larger than that of a predominantly stretching deformation for membranes thinner than 20 nm. In this regime we extract a giant strain gradient elastic coupling of ~2.2e-6 N, which could be used in new operational regimes of nano-electro-mechanics.
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Submitted 23 September, 2020;
originally announced September 2020.
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Single-source, solvent-free, room temperature deposition of black $γ$-CsSnI$_3$ films
Authors:
Vivien M. Kiyek,
Yorick A. Birkhölzer,
Yury Smirnov,
Martin Ledinsky,
Zdenek Remes,
Jamo Momand,
Bart J. Kooi,
Gertjan Koster,
Guus Rijnders,
Monica Morales-Masis
Abstract:
The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $γ$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $γ$ - CsSnI3 thin films is re…
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The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $γ$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $γ$ - CsSnI3 thin films is reported. This has been done by fabricating a solid target by completely solvent-free mixing of CsI and SnI2 powders and isostatic pressing. By controlled laser ablation of the solid target on an arbitrary substrate at room temperature, the formation of CsSnI3 thin films with optimal optical properties is demonstrated. The films present a band gap of 1.32 eV, a sharp absorption edge and near-infrared photoluminescence emission. These properties and X-ray diffraction of the thin films confirmed the formation of the orthorhombic (B-$γ$) perovskite phase. The thermal stability of the phase was ensured by applying in situ an Al2O$_3$ cap** layer. This work demonstrates the potential of pulsed laser deposition as a volatility-insensitive single-source growth technique of halide perovskites and represents a critical step forward in the development and future scalability of inorganic lead-free halide perovskites.
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Submitted 29 April, 2020;
originally announced June 2020.
