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Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition
Authors:
Abhijit Biswas,
Gustavo A. Alvarez,
Tao Li,
Joyce Christiansen-Salameh,
Eugene Jeong,
Anand B. Puthirath,
Sathvik Ajay Iyengar,
Chenxi Li,
Tia Gray,
Xiang Zhang,
Tymofii S. Pieshkov,
Harikishan Kannan,
Jacob Elkins,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Elias J. Garratt,
Bradford B. Pate,
Tony G. Ivanov,
Yuji Zhao,
Zhiting Tian,
Pulickel M. Ajayan
Abstract:
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition a…
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Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20 MW/(m2K). Our findings are useful for various device related applications based on UWBG BN/diamond heterostructures.
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Submitted 20 September, 2023; v1 submitted 22 May, 2023;
originally announced May 2023.
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Non-linear optics at twist interfaces in h-BN/SiC heterostructures
Authors:
Abhijit Biswas,
Rui Xu,
Gustavo A. Alvarez,
** Zhang,
Joyce Christiansen-Salameh,
Anand B. Puthirath,
Kory Burns,
Jordan A. Hachtel,
Tao Li,
Sathvik Ajay Iyengar,
Tia Gray,
Chenxi Li,
Xiang Zhang,
Harikishan Kannan,
Jacob Elkins,
Tymofii S. Pieshkov,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Elias J. Garratt,
Tony Ivanov,
Bradford B. Pate,
Yuji Zhao,
Hanyu Zhu,
Zhiting Tian
, et al. (2 additional authors not shown)
Abstract:
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and s…
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Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and scalable approach where nanocrystalline two-dimensional (2D) film on three-dimensional (3D) substrates yield twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. Our work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology.
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Submitted 4 November, 2023; v1 submitted 24 April, 2023;
originally announced April 2023.
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Phase Stability of Hexagonal/cubic Boron Nitride Nanocomposites
Authors:
Abhijit Biswas,
Rui Xu,
Joyce Christiansen-Salameh,
Eugene Jeong,
Gustavo A. Alvarez,
Chenxi Li,
Anand B. Puthirath,
Bin Gao,
Arushi Garg,
Tia Gray,
Harikishan Kannan,
Xiang Zhang,
Jacob Elkins,
Tymofii S. Pieshkov,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Bradford B. Pate,
Tony Ivanov,
Elias J. Garratt,
Pengcheng Dai,
Hanyu Zhu,
Zhiting Tian,
Pulickel M. Ajayan
Abstract:
Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show…
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Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show that the co-existence of two phases can lead to strong non-linear optical properties and low thermal conductivity at room temperature. Furthermore, spark-plasma sintering of the nanocomposite shows complete phase transformation to 2D h-BN with improved crystalline quality, where 3D c-BN grain sizes governs the nucleation and growth kinetics. Our demonstration might be insightful in phase engineering of BN polymorphs based nanocomposites with desirable properties for optoelectronics and thermal energy management applications.
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Submitted 17 April, 2023;
originally announced April 2023.
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Temperature Sensitivity of $^{14}\mathrm{NV}$ and $^{15}\mathrm{NV}$ Ground State Manifolds
Authors:
Sean Lourette,
Andrey Jarmola,
Victor M. Acosta,
A. Glen Birdwell,
Dmitry Budker,
Marcus W. Doherty,
Tony Ivanov,
Vladimir S. Malinovsky
Abstract:
We measure electron and nuclear spin transition frequencies in the ground state of nitrogen-vacancy (NV) centers in diamond for two nitrogen isotopes ($^{14}\mathrm{NV}$ and $^{15}\mathrm{NV}$) over temperatures ranging from 77 K to 400 K. Measurements are performed using Ramsey interferometry and direct optical readout of the nuclear and electron spins. We extract coupling parameters $Q$ (for…
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We measure electron and nuclear spin transition frequencies in the ground state of nitrogen-vacancy (NV) centers in diamond for two nitrogen isotopes ($^{14}\mathrm{NV}$ and $^{15}\mathrm{NV}$) over temperatures ranging from 77 K to 400 K. Measurements are performed using Ramsey interferometry and direct optical readout of the nuclear and electron spins. We extract coupling parameters $Q$ (for $^{14}\mathrm{NV}$), $D$, $A_{||}$, $A_{\perp}$, $γ_e/γ_n$, and their temperature dependences for both isotopes. The temperature dependences of the nuclear-spin transitions within the $m_s = 0$ spin manifold near room temperature are found to be +0.52(1) ppm/K for $^{14}\mathrm{NV}$ ($|m_I=-1> \leftrightarrow |m_I=+1>$) and -1.1(1) ppm/K for $^{15}\mathrm{NV}$ ($|m_I=-1/2> \leftrightarrow |m_I=+1/2>$). An isotopic shift in the zero-field splitting parameter $D$ between $^{14}\mathrm{NV}$ and $^{15}\mathrm{NV}$ is measured to be $\sim$ 120 kHz. Residual transverse magnetic fields are observed to shift the nuclear spin transition frequencies, especially for $^{15}\mathrm{NV}$. We have precisely determined the set of parameters relevant for the development of nuclear-spin-based diamond quantum sensors with greatly reduced sensitivity to environmental factors.
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Submitted 23 December, 2022;
originally announced December 2022.
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Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Authors:
Abhijit Biswas,
Mingfei Xu,
Kai Fu,
**gan Zhou,
Rui Xu,
Anand B. Puthirath,
Jordan A. Hachtel,
Chenxi Li,
Sathvik Ajay Iyengar,
Harikishan Kannan,
Xiang Zhang,
Tia Gray,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Dmitry A. Ruzmetov,
Pankaj B. Shah,
Tony Ivanov,
Hanyu Zhu,
Yuji Zhao,
Pulickel M. Ajayan
Abstract:
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the gr…
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Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.
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Submitted 1 September, 2022;
originally announced September 2022.
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Unidirectional domain growth of hexagonal boron nitride thin films
Authors:
Abhijit Biswas,
Qiyuan Ruan,
Frank Lee,
Chenxi Li,
Sathvik Ajay Iyengar,
Anand B. Puthirath,
Xiang Zhang,
Harikishan Kannan,
Tia Gray,
A. Glen Birdwell,
Mahesh R. Neupane,
Pankaj B. Shah,
Dmitry A. Ruzmetov,
Tony G. Ivanov,
Robert Vajtai,
Manoj Tripathi,
Alan Dalton,
Boris I. Yakobson,
Pulickel M. Ajayan
Abstract:
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates rem…
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Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena.
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Submitted 26 January, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Authors:
Abhijit Biswas,
Rishi Maiti,
Frank Lee,
Cecilia Y. Chen,
Tao Li,
Anand B. Puthirath,
Sathvik Ajay Iyengar,
Chenxi Li,
Xiang Zhang,
Harikishan Kannan,
Tia Gray,
Md Abid Shahriar Rahman Saadi,
Jacob Elkins,
A. Glen Birdwell,
Mahesh R. Neupane,
Pankaj B. Shah,
Dmitry A. Ruzmetov,
Tony G. Ivanov,
Robert Vajtai,
Yuji Zhao,
Alexander L. Gaeta,
Manoj Tripathi,
Alan Dalton,
Pulickel M. Ajayan
Abstract:
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diff…
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Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low coefficient of friction), low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of applications potential for room temperature grown h-BN nanosheets as it can be feasible on any given substrate, thus creating a scenario for h-BN on demand at frugal thermal budget.
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Submitted 12 October, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Stability of Oxygenated Groups on Pristine and Defective Diamond Surfaces
Authors:
Eliezer Oliveira,
Chenxi Li,
Xiang Zhang,
Anand Puthirath,
Mahesh R. Neupane,
James Weil,
A. Glen Birdwell,
Tony Ivanov,
Seoyun Kong,
Tia Grey,
Harikishan Kannan,
Robert Vajtai,
Douglas Galvao,
Pulickel Ajayan
Abstract:
The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected on the oxidized diamond, such as COC (ester), CO (ketonic), and COH (hydroxyl). However, the composition and relative concentration of these groups on diamond surfaces can be affected by the type of oxygenation treatment…
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The surface functionalization of diamond has been extensively studied through a variety of techniques, such as oxidation. Several oxygen groups have been correspondingly detected on the oxidized diamond, such as COC (ester), CO (ketonic), and COH (hydroxyl). However, the composition and relative concentration of these groups on diamond surfaces can be affected by the type of oxygenation treatment and the diamond surface quality. To investigate the stability of the oxygenated groups at specific diamond surfaces, we evaluated through fully atomistic reactive molecular mechanics (FARMM) simulations, using the ReaxFF force field, the formation energies of CO, COC, and COH groups on pristine and defective diamond surfaces (110), (111), and (311). According to our findings, the COH group has the lowest formation energy on a perfect (110) surface, while the COC is favored on a defective surface. As for the (111) surface, the COC group is the most stable for both pristine and defective surfaces. Similarly, COC group is also the most stable one on the defective/perfect (311) surface. In this way, our results suggest that if in a diamond film the (110) surface is the major exposed facet, the most adsorbed oxygen group could be either COH or COC, in which the COC would depend on the level of surface defects.
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Submitted 24 January, 2022;
originally announced January 2022.
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Demonstration of diamond nuclear spin gyroscope
Authors:
Andrey Jarmola,
Sean Lourette,
Victor M. Acosta,
A. Glen Birdwell,
Peter Blümler,
Dmitry Budker,
Tony Ivanov,
Vladimir S. Malinovsky
Abstract:
We demonstrate operation of a rotation sensor based on the $^{14}$N nuclear spins intrinsic to nitrogen-vacancy (NV) color centers in diamond. The sensor employs optical polarization and readout of the nuclei and a radio-frequency double-quantum pulse protocol that monitors $^{14}$N nuclear spin precession. This measurement protocol suppresses the sensitivity to temperature variations in the…
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We demonstrate operation of a rotation sensor based on the $^{14}$N nuclear spins intrinsic to nitrogen-vacancy (NV) color centers in diamond. The sensor employs optical polarization and readout of the nuclei and a radio-frequency double-quantum pulse protocol that monitors $^{14}$N nuclear spin precession. This measurement protocol suppresses the sensitivity to temperature variations in the $^{14}$N quadrupole splitting, and it does not require microwave pulses resonant with the NV electron spin transitions. The device was tested on a rotation platform and demonstrated a sensitivity of 4.7 $^{\circ}/\sqrt{\rm{s}}$ (13 mHz/$\sqrt{\rm{Hz}}$), with bias stability of 0.4 $^{\circ}$/s (1.1 mHz).
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Submitted 9 July, 2021;
originally announced July 2021.
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A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces
Authors:
Eliezer F. Oliveira,
Mahesh R. Neupane,
Chenxi Li,
Harikishan Kannan,
Xiang Zhang,
Anand B. Puthirath,
Pankaj B. Shah,
A. Glen Birdwell,
Tony G. Ivanov,
Robert Vajtai,
Douglas S. Galvao,
Pulickel M. Ajayan
Abstract:
Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond s…
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Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113) and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface hydrogenation in these surfaces is hard to achieve because of the steric repulsion between the terminated hydrogen atoms. Among all the considered surfaces, the (001), (110), and (113) surfaces incorporate a larger number of hydrogen atoms and passivate the surface dangling bonds. Our results on hydrogen stability also suggest that these surfaces with optimum hydrogen coverage are robust under extreme conditions and could provide homogeneous p-type surface conductivity in the diamond surfaces, a key requirement for high-field, high-frequency device applications.
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Submitted 25 May, 2021;
originally announced May 2021.
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Exploring Hydrodynamic Instabilities along the Infalling High-Velocity Cloud Complex A
Authors:
Kathleen A. Barger,
David L. Nidever,
Cannan Huey-You,
Nicolas Lehner,
Katherine Rueff,
Paris Freeman,
Amber Birdwell,
Bart P. Wakker,
Joss Bland-Hawthorn,
Robert Benjamin,
Drew A. Ciampa
Abstract:
Complex A is a high-velocity cloud that is traversing through the Galactic halo toward the Milky Way's disk. We combine both new and archival Green Bank Telescope observations to construct a spectroscopically resolved HI~21-cm map of this entire complex at a $17.1\lesssim\log{\left({N_{\rm HI},\,1σ}/{\rm cm}^{-2}\right)}\lesssim17.9$ sensitivity for a ${\rm FWHM}=20~{\rm km}\,{\rm s}^{-1}$ line an…
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Complex A is a high-velocity cloud that is traversing through the Galactic halo toward the Milky Way's disk. We combine both new and archival Green Bank Telescope observations to construct a spectroscopically resolved HI~21-cm map of this entire complex at a $17.1\lesssim\log{\left({N_{\rm HI},\,1σ}/{\rm cm}^{-2}\right)}\lesssim17.9$ sensitivity for a ${\rm FWHM}=20~{\rm km}\,{\rm s}^{-1}$ line and $Δθ=9.1\,{\rm arcmins}$ or $17\lesssimΔd_θ\lesssim30~\rm pc$ spatial resolution. We find that that Complex A is has a Galactic standard of rest frame velocity gradient of $Δ\rm v_{GSR}/ΔL=25~{\rm km}\,{\rm s}^{-1}/{\rm kpc}$ along its length, that it is decelerating at a rate of $\langle a\rangle_{\rm GSR}=55~{\rm km}/{\rm yr}^2$, and that it will reach the Galactic plane in $Δt\lesssim70~{\rm Myrs}$ if it can survive the journey. We have identify numerous signatures of gas disruption. The elongated and multi-core structure of Complex A indicates that either thermodynamic instabilities or shock-cascade processes have fragmented this stream. We find Rayleigh-Taylor fingers on the low-latitude edge of this HVC; many have been pushed backward by ram-pressure strip**. On the high-latitude side of the complex, Kelvin-Helmholtz instabilities have generated two large wings that extend tangentially off Complex A. The tips of these wings curve slightly forward in the direction of motion and have an elevated \hi\ column density, indicating that these wings are forming Rayleigh-Taylor globules at their tips and that this gas is becoming entangled with unseen vortices in the surrounding coronal gas. These observations provide new insights on the survivability of low-metallicity gas streams that are accreting onto $L_\star$ galaxies.
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Submitted 27 January, 2021;
originally announced January 2021.
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Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
Authors:
Wei Li,
A. Glen Birdwell,
Matin Amani,
Robert A. Burke,
Xi Ling,
Yi-Hsien Lee,
Xuelei Liang,
Lianmao Peng,
Curt A. Richter,
**g Kong,
David J. Gundlach,
N. V. Nguyen
Abstract:
Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a…
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Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation. A very strong optical critical point predicted to correspond to a quasi-particle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and gama points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at ~ 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurred in bulk semiconductors, is associated with a combination of several critical points.These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general, and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations.
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Submitted 25 July, 2014;
originally announced July 2014.
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Band Structure Map** of Bilayer Graphene via Quasiparticle Scattering
Authors:
Matthew Yankowitz,
Joel I-Jan Wang,
Suchun Li,
A. Glen Birdwell,
Yu-An Chen,
Kenji Watanabe,
Takashi Taniguchi,
Su Ying Quek,
Pablo Jarillo-Herrero,
Brian J. LeRoy
Abstract:
A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle…
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A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as $γ_0 = 3.1$ eV, $γ_1 = 0.39$ eV, and $γ_4 = 0.22$ eV.
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Submitted 3 June, 2014;
originally announced June 2014.
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Electric Field Control of Soliton Motion and Stacking in Trilayer Graphene
Authors:
Matthew Yankowitz,
Joel I-Jan Wang,
A. Glen Birdwell,
Yu-An Chen,
K. Watanabe,
T. Taniguchi,
Philippe Jacquod,
Pablo San-Jose,
Pablo Jarillo-Herrero,
Brian J. LeRoy
Abstract:
The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) which exhibit very different electron…
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The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) which exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favored as the electric field increases. This ability to control the stacking order in graphene opens the way to novel devices which combine structural and electrical properties.
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Submitted 29 January, 2014;
originally announced January 2014.
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Temperature-dependent Phonon Shifts in Monolayer MoS2
Authors:
Nicholas Lanzillo,
A. Glen Birdwell,
Matin Amani,
Frank J. Crowne,
Pankaj B. Shah,
Sina Najmaei,
Zheng Liu,
Pulickel M. Ajayan,
Jun Lou,
Madan Dubey,
Saroj K. Nayak,
Terrance P. O'Regan
Abstract:
We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an expected red-shift with increasing temperature, the frequency shift is larger for the A1g more than for the E2g mode. This is in contrast to previously reported…
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We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an expected red-shift with increasing temperature, the frequency shift is larger for the A1g more than for the E2g mode. This is in contrast to previously reported bulk behavior, in which the E2g mode shows a larger frequency shift with temperature. The temperature dependence of these phonon shifts is attributed to the anharmonic contributions to the ionic interaction potential in the two-dimensional system.
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Submitted 9 July, 2013;
originally announced July 2013.
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Blue shifting of the A exciton peak in folded monolayer 1H-MoS2
Authors:
Frank J. Crowne,
Matin Amani,
A. Glen Birdwell,
Matthew L. Chin,
Terrance P. O'Regan,
Sina Najmaei,
Zheng Liu,
Pulickel M. Ajayan,
Jun Lou,
Madan Dubey
Abstract:
The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experiment…
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The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experimentally show that folding a 1H molybdenum disulphide (MoS2) layer results in a turbostratic stack with enhanced photoluminescence quantum yield and a significant shift to the blue by 90 meV. This is in contrast to the expected 2H-MoS2 band structure characteristics, which include an indirect gap and quenched photoluminescence. We present a theoretical explanation to the origin of this behavior in terms of exciton screening.
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Submitted 5 July, 2013;
originally announced July 2013.
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Raman and Photoluminescence Study of Dielectric and Thermal Effects on Atomically Thin MoS2
Authors:
Rusen Yan,
Simone Bertolazzi,
Jacopo Brivio,
Tian Fang,
Aniruddha Konar,
A. Glen Birdwell,
N. V. Nguyen,
Andras Kis,
Debdeep Jena,
Huili Grace Xing
Abstract:
Atomically thin two-dimensional molybdenum disulfide (MoS2) sheets have attracted much attention due to their potential for future electronic applications. They not only present the best planar electrostatic control in a device, but also lend themselves readily for dielectric engineering. In this work, we experimentally investigated the dielectric effect on the Raman and photoluminescence (PL) spe…
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Atomically thin two-dimensional molybdenum disulfide (MoS2) sheets have attracted much attention due to their potential for future electronic applications. They not only present the best planar electrostatic control in a device, but also lend themselves readily for dielectric engineering. In this work, we experimentally investigated the dielectric effect on the Raman and photoluminescence (PL) spectra of monolayer MoS2 by comparing samples with and without HfO2 on top by atomic layer deposition (ALD). Based on considerations of the thermal, do**, strain and dielectric screening influences, it is found that the red shift in the Raman spectrum largely stems from modulation do** of MoS2 by the ALD HfO2, and the red shift in the PL spectrum is most likely due to strain imparted on MoS2 by HfO2. Our work also suggests that due to the intricate dependence of band structure of monolayer MoS2 on strain, one must be cautious to interpret its Raman and PL spectroscopy.
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Submitted 18 August, 2013; v1 submitted 17 November, 2012;
originally announced November 2012.
