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Integrated resonant electro-optic comb enabled by platform-agnostic laser integration
Authors:
Isaac Luntadila Lufungula,
Amirhassan Shams-Ansari,
Dylan Renaud,
Camiel Op de Beeck,
Stijn Cuyvers,
Stijn Poelman,
Maximilien Billet,
Gunther Roelkens,
Marko Loncar,
Bart Kuyken
Abstract:
The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands f…
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The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands for ultra-low optical loss, wider bandgaps, and optical nonlinearities necessitate other platforms. Develo** integrated lasers on less mature platforms is arduous and costly due to limited throughput or unconventional process requirements. In response, we propose a novel platform-agnostic laser integration technique utilizing a singular design and process flow, applicable without modification to a diverse range of platforms. Leveraging a two-step micro-transfer printing method, we achieve nearly identical laser performance across platforms with refractive indices between 1.7 and 2.5. Experimental validation demonstrates strikingly similar laser characteristics between devices processed on lithium niobate and silicon nitride platforms. Furthermore, we showcase the integration of a laser with a resonant electro-optic comb generator on the thin-film lithium niobate platform, producing over 80 comb lines spanning 12 nm. This versatile technique transcends platform-specific limitations, facilitating applications like microwave photonics, handheld spectrometers, and cost-effective Lidar systems, across multiple platforms.
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Submitted 8 February, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator
Authors:
Ying Tan,
Shengpu Niu,
Maximilien Billet,
Nishant Singh,
Margot Niels,
Tom Vanackere,
Joris Van Kerrebrouck,
Gunther Roelkens,
Bart Kuyken,
Dries Van Thourhout
Abstract:
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lit…
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Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps.
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Submitted 26 November, 2023;
originally announced November 2023.
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Reliable micro-transfer printing method for heterogeneous integration of lithium niobate and semiconductor thin films
Authors:
Tom Vandekerckhove,
Tom Vanackere,
Jasper De Witte,
Stijn Cuyvers,
Luis Reis,
Maximilien Billet,
Günther Roelkens,
Stéphane Clemmen,
Bart Kuyken
Abstract:
High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon and silicon nitride lack these capabilities. Micro-transfer printing of thin-film lithium niobate offers a solution, but suspending large areas of thin films for long interaction lengths and high-Q resonators is challenging, resulting in a low transfer yie…
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High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon and silicon nitride lack these capabilities. Micro-transfer printing of thin-film lithium niobate offers a solution, but suspending large areas of thin films for long interaction lengths and high-Q resonators is challenging, resulting in a low transfer yield. We present a new source preparation method that enables reliable transfer printing of thin-film lithium niobate. We demonstrate its versatility by successfully applying it to gallium phosphide and silicon, and provide an estimate of the transfer yield by subsequently printing 25 lithium niobate films without fail.
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Submitted 26 April, 2023;
originally announced April 2023.
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Supercontinuum generation assisted by dispersive waves trap** in dispersion-managed integrated silicon waveguides
Authors:
Junxiong Wei,
Charles Ciret,
Maximilien Billet,
François Leo,
Bart Kuyken,
Simon-Pierre Gorza
Abstract:
Compact chip-scale comb sources are of significant interest for many practical applications. Here, we experimentally study the generation of supercontinuum (SC) in an axially varying integrated waveguide. We show that the local tuning of the dispersion enables the continuous blue shift of dispersive waves thanks to their trap** by the strongly compressed pump pulse. This mechanism provides new i…
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Compact chip-scale comb sources are of significant interest for many practical applications. Here, we experimentally study the generation of supercontinuum (SC) in an axially varying integrated waveguide. We show that the local tuning of the dispersion enables the continuous blue shift of dispersive waves thanks to their trap** by the strongly compressed pump pulse. This mechanism provides new insight into supercontinuum generation in a dispersion varying integrated waveguide. Pumped close to 2.2 $μ$m in the femtosecond regime and at a pulse energy of $\sim$ 4 pJ, the output spectrum extends from 1.1 $μ$m up to 2.76 $μ$m and shows good coherence properties. Octave-spanning SC is also observed at input energy as low as $\sim$ 0.9 pJ. We show that the supercontinuum is more robust against variations of the input pulse parameters and is also spectrally flatter in our numerically optimized waveguide than in fixed-width waveguides. This research demonstrates the potential of dispersion varying waveguides for coherent SC generation and paves the way for integrated low power applications, such as chip-scale frequency comb generation, precision spectroscopy, optical frequency metrology, and wide-band wavelength division multiplexing in the near-infrared.
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Submitted 27 July, 2020;
originally announced July 2020.
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Ultra-fast quantum-well infared photodetectors operating at 10μm with flat response up to 70GHz at room temperature
Authors:
M. Hakl,
Q. Y. Lin,
S. Lepillet,
M. Billet,
J-F. Lampin,
S. Pirotta,
R. Colombelli,
W. J. Wan,
J. C. Cao,
H. Li,
E. Peytavit,
S. Barbieri
Abstract:
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As multi-quantum-well heterostructure to demonstrate heterodyne detection at 10um wavelength with a nearly flat frequency response up to 70GHz at room temperature, solely limited…
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III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As multi-quantum-well heterostructure to demonstrate heterodyne detection at 10um wavelength with a nearly flat frequency response up to 70GHz at room temperature, solely limited by the measurement system bandwidth. This is the broadest RF-bandwidth reported to date for a quantum-well mid-infrared photodetector. Responsivities of 0.15A/W and 1.5A/W are obtained at 300K and 77K respectively. To allow ultrafast operation and illumination at normal incidence, the detector consists of a 50Ohm coplanar waveguide, monolithically integrated with a 2D-array of sub-wavelength antennas, electrically interconnected by suspended wires. With this device architecture we obtain a parasitic capacitance of ~30fF, corresponding to the static capacitance of the antennas, yielding a RC-limited 3dB cutoff frequency >150GHz at 300K, extracted with a small-signal equivalent circuit model. Using this model, we quantitively reproduce the detector frequency response and find intrinsic roll-off time constants as low as 1ps at room temperature.
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Submitted 5 January, 2021; v1 submitted 1 July, 2020;
originally announced July 2020.
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Full Vectorial Modeling of Second Harmonic Generation in III-V-on-insulator Nanowires
Authors:
Charles Ciret,
Koen Alexander,
Nicolas Poulvellarie,
Maximilien Billet,
Carlos Mas Arabi,
Bart Kuyken,
Simon-Pierre Gorza,
Francois Leo
Abstract:
We model second harmonic generation in subwavelength III-V-on-insulator waveguides. The large index contrast induces strong longitudinal electric field components that play an important role in the nonlinear conversion. We show that many different waveguide dimensions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a high…
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We model second harmonic generation in subwavelength III-V-on-insulator waveguides. The large index contrast induces strong longitudinal electric field components that play an important role in the nonlinear conversion. We show that many different waveguide dimensions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a higher-order second harmonic mode.
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Submitted 7 January, 2020;
originally announced January 2020.
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Second Harmonic Generation Enabled by Longitudinal Electric Field Components in Photonic Wire Waveguides
Authors:
Nicolas Poulvellarie,
Utsav Dave,
Koen Alexander,
Charles Ciret,
Maximilien Billet,
Carlos Mas Arabi,
Fabrice Raineri,
Sylvain Combrie,
Alfredo De Rossi,
Gunther Roelkens,
Simon-Pierre Gorza,
Bart Kuyken,
Francois Leo
Abstract:
We investigate type I second harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element of III-V semiconductors, only frequency conversion by mixing with the longitudinal components of the optical fields is allowed. We experimentally study the impact of the propagation direction on the conversion…
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We investigate type I second harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element of III-V semiconductors, only frequency conversion by mixing with the longitudinal components of the optical fields is allowed. We experimentally study the impact of the propagation direction on the conversion efficiency and confirm the role played by the longitudinal components through the excitation of an antisymmetric second harmonic higher order mode.
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Submitted 8 May, 2020; v1 submitted 6 January, 2020;
originally announced January 2020.
