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Investigation and field effect tuning of thermoelectric properties of SnSe2 flakes
Authors:
I. Pallecchi,
F. Caglieris,
M. Ceccardi,
N. Manca,
D. Marre',
L. Repetto,
M. Schott,
D. I. Bilc,
S. Chaitoglou,
A. Dimoulas,
M. J. Verstraete
Abstract:
The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some VdWDs possess remar…
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The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some VdWDs possess remarkable thermoelectric properties. SnSe2 has been identified as a promising thermoelectric material on the basis of its estimated electronic and transport properties. In this work we carry out experimental meas-urements of the electric and thermoelectric properties of SnSe2 flakes. For a 30 micron thick SnSe2 flake at room temperature, we measure electron mobility of 40 cm^2 V^-1 s^-1, a carrier density of 4 x 10^18 cm^-3, a Seebeck coefficient S around -400 microV/K and thermoelectric power factor around 0.35 mW m^-1 K^-2. The comparison of experimental results with theoretical calculations shows fair agreement and indicates that the dominant carrier scattering mechanisms are polar optical phonons at room temperature and ionized im-purities below 50 K. In order to explore possible improvement of the thermoelectric properties, we carry out reversible electrostatic do** on a thinner flake, in a field effect setup. On this 75 nm thick SnSe2 flake, we measure a field effect variation of the Seebeck coefficient of up to 290 % at low temperature, and a corresponding variation of the thermoelectric power factor of up to 1050 %. We find that the power factor increases with the depletion of n-type charge carriers. Field effect control of thermoelectric transport opens perspectives for boosting energy harvesting and novel switching technologies based on two-dimensional materials.
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Submitted 28 April, 2023;
originally announced April 2023.
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Magnetic instabilities in doped Fe$_2YZ$ full-Heusler thermoelectric compounds
Authors:
Sébastien Lemal,
Fabio Ricci,
Daniel I. Bilc,
Matthieu J. Verstraete,
Philippe Ghosez
Abstract:
Thermoelectricity is a promising avenue for harvesting energy but large-scale applications are still hampered by the lack of highly-efficient low-cost materials. Recently, Fe$_2YZ$ Heusler compounds were predicted theoretically to be interesting candidates with large thermoelectric power factor. Here, we show that under do** conditions compatible with thermoelectric applications, these materials…
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Thermoelectricity is a promising avenue for harvesting energy but large-scale applications are still hampered by the lack of highly-efficient low-cost materials. Recently, Fe$_2YZ$ Heusler compounds were predicted theoretically to be interesting candidates with large thermoelectric power factor. Here, we show that under do** conditions compatible with thermoelectric applications, these materials are prone to an unexpected magnetic instability detrimental to their thermoelectric performance. We rationalize the physics at the origin of this instability, provide guidelines for avoiding it and discuss its impact on the thermoelectric power factor. Doing so, we also point out the shortcomings of the rigid band approximation commonly used in high-throughput theoretical searches of new thermoelectrics.
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Submitted 20 November, 2019; v1 submitted 9 July, 2019;
originally announced July 2019.
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High field properties of typical perovskite ferroelectrics by first-principles modeling
Authors:
Daniel I. Bilc,
Liviu Zarbo,
Sorina Garabagiu,
Eric Bousquet,
Liliana Mitoseriu
Abstract:
Using first-principles calculations, we estimated the impact of large applied electric E fields on the structural, dielectric, and ferroelectric properties of typical ferroelectrics. At large fields, the structural parameters change significantly, decreasing the strain between the different structural phases. This effect favours a polarization rotation model for ferroelectric switching in which th…
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Using first-principles calculations, we estimated the impact of large applied electric E fields on the structural, dielectric, and ferroelectric properties of typical ferroelectrics. At large fields, the structural parameters change significantly, decreasing the strain between the different structural phases. This effect favours a polarization rotation model for ferroelectric switching in which the electronic polarization rotates between the directions of tetragonal, rhombohedral and orthorhombic phases. We estimate coercive fields E_c ~31 MV/m and ~52 MV/m at zero temperature for bulk ferroelectric monodomains of BaTiO3 and PbTiO3, respectively. The dielectric permittivity and tunability of BaTiO3 are the least affected at large fields, making this material attractive for applications in electronics and energy storage.
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Submitted 24 May, 2016;
originally announced May 2016.
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First-principles Modelling of SrTiO3 based Oxides for Thermoelectric Applications
Authors:
Daniel I. Bilc,
Calin G. Floare,
Liviu P. Zarbo,
Sorina Garabagiu,
Sebastien Lemal,
Philippe Ghosez
Abstract:
Using first-principles electronic structure calculations, we studied the electronic and thermoelectric properties of SrTiO3 based oxide materials and their nanostructures identifying those nanostructures which possess highly anisotropic electronic bands. We showed recently that highly anisotropic flat-and-dispersive bands can maximize the thermoelectric power factor, and at the same time they can…
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Using first-principles electronic structure calculations, we studied the electronic and thermoelectric properties of SrTiO3 based oxide materials and their nanostructures identifying those nanostructures which possess highly anisotropic electronic bands. We showed recently that highly anisotropic flat-and-dispersive bands can maximize the thermoelectric power factor, and at the same time they can produce low dimensional electronic transport in bulk semiconductors. Although most of the considered nanostructures show such highly anisotropic bands, their predicted thermoelectric performance is not improved over that of SrTiO3. Besides highly anisotropic character, we emphasize the importance of the large weights of electronic states participating in transport and the small effective mass of charge carriers along the transport direction. These requirements may be better achieved in binary transition metal oxides than in ABO3 perovskite oxide materials.
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Submitted 24 May, 2016;
originally announced May 2016.
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Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States
Authors:
Daniel I. Bilc,
Geoffroy Hautier,
David Waroquiers,
Gian-Marco Rignanese,
Philippe Ghosez
Abstract:
Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanost…
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Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures or the introduction of resonant states were suggested as possible solutions to this paradox but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly-directional character of some orbitals to engineer the band-structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principles calculations, the theoretical concept is demonstrated in Fe$_2$YZ Heusler compounds, yielding power factors 4-5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with a similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting or photovoltaic applications.
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Submitted 2 April, 2015; v1 submitted 19 May, 2014;
originally announced May 2014.
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First-principles modeling of the thermoelectric properties of SrTiO$_3$/SrRuO$_3$ superlattices
Authors:
Pablo García-Fernández,
Marcos Verissimo-Alves,
Daniel I. Bilc,
Philippe Ghosez,
Javier Junquera
Abstract:
Using a combination of first-principles simulations, based on the density functional theory and Boltzmann's semiclassical theory, we have calculated the transport and thermoelectric properties of the half-metallic two dimensional electron gas confined in single SrRuO$_3$ layers of SrTiO$_3$/SrRuO$_3$ periodic superlattices. Close to the Fermi energy we find that the semiconducting majority spin ch…
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Using a combination of first-principles simulations, based on the density functional theory and Boltzmann's semiclassical theory, we have calculated the transport and thermoelectric properties of the half-metallic two dimensional electron gas confined in single SrRuO$_3$ layers of SrTiO$_3$/SrRuO$_3$ periodic superlattices. Close to the Fermi energy we find that the semiconducting majority spin channel displays a very large in-plane component of the Seebeck tensor at room temperature, $S$ = 1500 $μ$V/K, and the minority spin channel shows good in-plane conductivity $σ$ = 2.5 (m$Ω$cm)$^{-1}$. However, contrary to the expectation of Hicks and Dresselhaus model about enhanced global thermoelectric properties due to the confinement of the metallic electrons, we find that the total power factor and thermoelectric figure of merit for reduced do** is too small for practical applications. The reason for this failure can be traced back on the electronic structure of the interfacial gas, which departs from the free electron behaviour on which the model was based. The evolution of the electronic structure, electrical conductivity, Seebeck coefficient, and power factor as a function of the chemical potential is explained by a simplified tight-binding model. We find that the electron gas in our system is composed by a pair of one dimensional electron gases orthogonal to each other. This reflects the fact the physical dimensionality of the electronic system can be even smaller than that of the spacial confinement of the carriers.
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Submitted 2 May, 2012;
originally announced May 2012.
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Interstitial Transition Metal Do** in Hydrogen Saturated Silicon Nanowires
Authors:
E. Durgun,
D. I. Bilc,
S. Ciraci,
Ph. Ghosez
Abstract:
We report a first principles systematic study of atomic, electronic, and magnetic properties of hydrogen saturated silicon nanowires (H-SiNW) which are doped by transition metal (TM) atoms placed at various interstitial sites. Our results obtained within the conventional GGA+U approach have been confirmed using an hybrid functional. In order to reveal the surface effects we examined three differen…
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We report a first principles systematic study of atomic, electronic, and magnetic properties of hydrogen saturated silicon nanowires (H-SiNW) which are doped by transition metal (TM) atoms placed at various interstitial sites. Our results obtained within the conventional GGA+U approach have been confirmed using an hybrid functional. In order to reveal the surface effects we examined three different possible facets of H-SiNW along [001] direction with a diameter of ~2nm. The energetics of do** and resulting electronic and magnetic properties are examined for all alternative configurations. We found that except Ti, the resulting systems have magnetic ground state with a varying magnetic moment. While H-SiNWs are initially non-magnetic semiconductor, they generally become ferromagnetic metal upon TM do**. Even they posses half-metallic behavior for specific cases. Our results suggest that H-SiNWs can be functionalized by TM impurities which would lead to new electronic and spintronic devices at nanoscale.
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Submitted 24 April, 2012;
originally announced April 2012.
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Highly-confined spin-polarized two-dimensional electron gas in SrTiO$_{3}$/SrRuO$_{3}$ superlattices
Authors:
Marcos Verissimo-Alves,
Pablo García-Fernández,
Daniel I. Bilc,
Philippe Ghosez,
Javier Junquera
Abstract:
We report first principles characterization of the structural and electronic properties of (SrTiO$_{3}$)$_{5}$/(SrRuO$_{3}$)$_{1}$ superlattices. We show that the system exhibits a spin-polarized two-dimensional electron gas, extremely confined to the 4$d$ orbitals of Ru in the SrRuO$_{3}$ layer. Every interface in the superlattice behaves as a minority-spin half-metal ferromagnet, with a magnetic…
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We report first principles characterization of the structural and electronic properties of (SrTiO$_{3}$)$_{5}$/(SrRuO$_{3}$)$_{1}$ superlattices. We show that the system exhibits a spin-polarized two-dimensional electron gas, extremely confined to the 4$d$ orbitals of Ru in the SrRuO$_{3}$ layer. Every interface in the superlattice behaves as a minority-spin half-metal ferromagnet, with a magnetic moment of $μ$ = 2.0 $μ_{\rm B}$/SrRuO$_{3}$ unit. The shape of the electronic density of states, half metallicity and magnetism are explained in terms of a simplified tight-binding model, considering only the $t_{2g}$ orbitals plus (i) the bi-dimensionality of the system, and (ii) strong electron correlations.
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Submitted 14 January, 2012;
originally announced January 2012.
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Electronic and thermoelectric properties of Fe2VAl: The role of defects and disorder
Authors:
Daniel I. Bilc,
Philippe Ghosez
Abstract:
Using first-principles calculations, we show that Fe2VAl is an indirect band gap semiconductor. Our calculations reveal that its, sometimes assigned, semimetallic character is not an intrinsic property but originates from the antisite defects and site disorder, which introduce localized ingap and resonant states changing the electronic properties close to band gap. These states negatively affect t…
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Using first-principles calculations, we show that Fe2VAl is an indirect band gap semiconductor. Our calculations reveal that its, sometimes assigned, semimetallic character is not an intrinsic property but originates from the antisite defects and site disorder, which introduce localized ingap and resonant states changing the electronic properties close to band gap. These states negatively affect the thermopower S and power factor PF=S^2σ, decreasing the good thermoelectric performance of intrinsic Fe2VAl.
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Submitted 16 February, 2011;
originally announced February 2011.
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Frustration of tilts and A-site driven ferroelectricity in KNbO_3-LiNbO_3 alloys
Authors:
D. I. Bilc,
D. J. Singh
Abstract:
Density functional calculations for K_{0.5}Li_{0.5}NbO_3 show strong A-site driven ferroelectricity, even though the average tolerance factor is significantly smaller than unity and there is no stereochemically active A-site ion. This is due to the frustration of tilt instabilities by A-site disorder. There are very large off-centerings of the Li ions, which contribute strongly to the anisotropy…
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Density functional calculations for K_{0.5}Li_{0.5}NbO_3 show strong A-site driven ferroelectricity, even though the average tolerance factor is significantly smaller than unity and there is no stereochemically active A-site ion. This is due to the frustration of tilt instabilities by A-site disorder. There are very large off-centerings of the Li ions, which contribute strongly to the anisotropy between the tetragonal and rhombohedral ferroelectric states, yielding a tetragonal ground state even without strain coupling.
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Submitted 16 May, 2008;
originally announced May 2008.
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Hybrid exchange-correlation functional for accurate prediction of the electronic and structural properties of ferroelectric oxides
Authors:
D. I. Bilc,
R. Orlando,
R. Shaltaf,
G. -M. Rignanese,
Jorge Íñiguez,
Ph. Ghosez
Abstract:
Using a linear combination of atomic orbitals approach, we report a systematic comparison of various Density Functional Theory (DFT) and hybrid exchange-correlation functionals for the prediction of the electronic and structural properties of prototypical ferroelectric oxides. It is found that none of the available functionals is able to provide, at the same time, accurate electronic and structu…
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Using a linear combination of atomic orbitals approach, we report a systematic comparison of various Density Functional Theory (DFT) and hybrid exchange-correlation functionals for the prediction of the electronic and structural properties of prototypical ferroelectric oxides. It is found that none of the available functionals is able to provide, at the same time, accurate electronic and structural properties of the cubic and tetragonal phases of BaTiO$_3$ and PbTiO$_3$. Some, although not all, usual DFT functionals predict the structure with acceptable accuracy, but always underestimate the electronic band gaps. Conversely, common hybrid functionals yield an improved description of the band gaps, but overestimate the volume and atomic distortions associated to ferroelectricity, giving rise to an unacceptably large $c/a$ ratio for the tetragonal phases of both compounds. This super-tetragonality is found to be induced mainly by the exchange energy corresponding to the Generalized Gradient Approximation (GGA) and, to a lesser extent, by the exact exchange term of the hybrid functional. We thus propose an alternative functional that mixes exact exchange with the recently proposed GGA of Wu and Cohen [Phys. Rev. B 73, 235116 (2006)] which, for solids, improves over the treatment of exchange of the most usual GGA's. The new functional renders an accurate description of both the structural and electronic properties of typical ferroelectric oxides.
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Submitted 6 May, 2008;
originally announced May 2008.
