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A semi-analytical approach for the characterization of ordered 3D nano structures using grazing-incidence X-ray fluorescence
Authors:
K. V. Nikolaev,
V. Soltwisch,
P. Hoenicke,
F. Scholze,
J. de la Rie,
S. N. Yakunin,
I. A. Makhotkin,
R. W. E. van de Kruijs,
F. Bijkerk
Abstract:
Following the recent demonstration of grazing-incidence X-ray fluorescence (GIXRF) based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new computational scheme for the simulation of the angular dependent fluorescence intensities from such periodic 2D and 3D nanoscale structures. The computation…
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Following the recent demonstration of grazing-incidence X-ray fluorescence (GIXRF) based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new computational scheme for the simulation of the angular dependent fluorescence intensities from such periodic 2D and 3D nanoscale structures. The computational scheme is based on the dynamical diffraction theory in many-beam approximation, which allows to derive a semi-analytical solution to the Sherman equation in a linear-algebraic form. The computational scheme has been used to analyze recently published GIXRF data measured on 2D Si3N4 lamellar gratings, as well as on periodically structured 3D Cr nano pillars. Both the dimensional and structural parameters of these nanostructures have been reconstructed by fitting numeric simulations to the experimental GIXRF data. Obtained results show good agreement with nominal parameters used in the manufacturing of the structures, as well as with reconstructed parameters based on the previously published finite element method simulations, in case of the Si3N4 grating.
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Submitted 30 August, 2019;
originally announced August 2019.
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Limits of surface analysis of thin film compounds using LEIS
Authors:
Andrey A. Zameshin,
Andrey E. Yakshin,
Jacobus M. Sturm,
Cristiane Stilhano Vilas Boas,
Fred Bijkerk
Abstract:
Low Energy Ion Scattering (LEIS) was employed to study the surface composition of thin films of Ru on B, C and B4C films at different stages of growth. Effects of surface segregation of C were observed. Previously unknown matrix effects were observed in these samples, expressed in the decrease of LEIS signals of Ru, B and C at low Ru concentrations. The effect disappears for Ru-rich surfaces. Meas…
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Low Energy Ion Scattering (LEIS) was employed to study the surface composition of thin films of Ru on B, C and B4C films at different stages of growth. Effects of surface segregation of C were observed. Previously unknown matrix effects were observed in these samples, expressed in the decrease of LEIS signals of Ru, B and C at low Ru concentrations. The effect disappears for Ru-rich surfaces. Measurements with different He+ ion energies prove that the characteristic velocities of the elements involved change with surface composition. We suggest that these matrix effects appear due to the changes in neutralization efficiency in quasiresonant neutralization from the valence band (VB-qRN). This neutralization channel is present in elemental C and B due to a wide valence band with energy states as low as -20 eV, which are in a (quasi-)resonance with the He 1s level. This mechanism was earlier reported for graphitic carbon. We suggest that it can be applied to a much wider range of materials, leading to potential matrix effects in LEIS from a variety of surfaces, containing B, C and potentially O and N atoms, e.g. borides, carbides, oxides and nitrides, as well as alloys with B and C. This hypothesis is supported by additional LEIS measurements on oxidized Ru which show matrix effect in Ru-O LEIS signals as well. We argue that it is possible to avoid the matrix effects from compounded surfaces within certain ranges of composition by a proper choice of reference samples, while for other compositions knowledge of characteristic velocities is required for reliable quantification.
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Submitted 6 September, 2018;
originally announced September 2018.
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Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substrates
Authors:
Anuj Chopra,
Muharrem Bayraktar,
Maarten Nijland,
Johan E. ten Elshof,
Fred Bijkerk,
Guus Rijnders
Abstract:
Renewed interest has been witnessed in utilizing the piezoelectric response of $PbZr_{0.52}Ti_{0.48}O_{3}$ (PZT) films on glass substrates for applications such as data storage and adaptive optics. Accordingly, new methodologies are being explored to grow well-oriented PZT thin films to harvest a large piezoelectric response. However, thin film piezoelectric response is significantly reduced compa…
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Renewed interest has been witnessed in utilizing the piezoelectric response of $PbZr_{0.52}Ti_{0.48}O_{3}$ (PZT) films on glass substrates for applications such as data storage and adaptive optics. Accordingly, new methodologies are being explored to grow well-oriented PZT thin films to harvest a large piezoelectric response. However, thin film piezoelectric response is significantly reduced compared to intrinsic response due to substrate induced clam**, even when films are well-oriented. Here, a novel method is presented to grow preferentially (100)-oriented PZT films on glass substrates by utilizing crystalline nanosheets as seed layers. Furthermore, increasing the repetition frequency up to 20 Hz during pulsed laser deposition helps to tune the film microstructure to hierarchically ordered columns that leads to reduced clam** and enhanced piezoelectric response evidenced by transmission electron microscopy and analytical calculations. A large piezoelectric response of 280 pm/V is observed in optimally tuned structure which almost triples the highest reported piezoelectric response on glass. To confirm that the clam** compromises the piezoelectric response, denser films are deposited using a lower repetition frequency and a $BiFeO_{3}$ buffer layer resulting in significantly reduced piezoelectric responses. This paper demonstrates a novel method for PZT integration on glass substrates without compromising the large piezoelectric response.
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Submitted 17 November, 2016;
originally announced November 2016.
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A model for pressurized hydrogen induced thin film blisters
Authors:
R. A. J. M. van den Bos,
V. Reshetniak,
C. J. Lee,
J. Benschop,
F. Bijkerk
Abstract:
We introduce a model for hydrogen induced blister formation in nanometer thick thin films. The model assumes that molecular hydrogen gets trapped under a circular blister cap causing it to deflect elastically outward until a stable blister is formed. In the first part, the energy balance required for a stable blister is calculated. From this model, the adhesion energy of the blister cap, the inter…
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We introduce a model for hydrogen induced blister formation in nanometer thick thin films. The model assumes that molecular hydrogen gets trapped under a circular blister cap causing it to deflect elastically outward until a stable blister is formed. In the first part, the energy balance required for a stable blister is calculated. From this model, the adhesion energy of the blister cap, the internal pressure and the critical H-dose for blister formation can be calculated. In the second part, the flux balance required for a blister to grow to a stable size is calculated. The model is applied to blisters formed in a Mo/Si multilayer after being exposed to hydrogen ions. From the model the adhesion energy of the Mo/Si blister cap was calculated to be around 1.05 J/m2 with internal pressures in the range of 175-280 MPa. Based on the model a minimum ion dose for the onset of blister formation was calculated to be d = 4.2*10^18 ions/cm2. From the flux balance equations the diffusion constant for the Mo/Si blister cap was estimated to be D_H2 = (10+-1) *10^18 cm2/s.
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Submitted 5 September, 2016;
originally announced September 2016.
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Exploring the electron density in plasma induced by EUV radiation: II. Numerical studies in argon and hydrogen
Authors:
D. I. Astakhov,
W. J. Goedheer,
C. J. Lee,
V. V. Ivanov,
V. M. Krivtsun,
K. N. Koshelev,
D. V. Lopaev,
R. M. van der Horst,
J. Beckers,
E. A. Osorio,
F. Bijkerk
Abstract:
We used numerical modeling to study the evolution of EUV-induced plasmas in argon and hydrogen. The results of simulations were compared to the electron densities measured by microwave cavity resonance spectroscopy. It was found that the measured electron densities can be used to derive the integral amount of plasma in the cavity. However, in some regimes, the impact of the setup geometry, EUV spe…
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We used numerical modeling to study the evolution of EUV-induced plasmas in argon and hydrogen. The results of simulations were compared to the electron densities measured by microwave cavity resonance spectroscopy. It was found that the measured electron densities can be used to derive the integral amount of plasma in the cavity. However, in some regimes, the impact of the setup geometry, EUV spectrum, and EUV induced secondary emission should be taken into account. The influence of these parameters on the generated plasma and the measured electron density is discussed.
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Submitted 26 March, 2016;
originally announced March 2016.
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Emissivity of freestanding membranes with thin metal coatings
Authors:
P. J. van Zwol,
D. F. Vles,
W. P. Voorthuijzen,
M. Péter,
H. Vermeulen,
W. J. van der Zande,
J. M. Sturm. R. W. E. van de Kruijs,
F. Bijkerk
Abstract:
Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membrane decreases, emissivity vanishes, which limits radiative heat emission and resistance to heat loads. We show that thin metal layers with thicknesses in the order of 1 nm enhance the emissivity of thin membranes by two t…
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Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membrane decreases, emissivity vanishes, which limits radiative heat emission and resistance to heat loads. We show that thin metal layers with thicknesses in the order of 1 nm enhance the emissivity of thin membranes by two to three orders of magnitude close to the theoretical limit of 0.5. This considerably increases thermal load capacity of membranes in vacuum environments. Our experimental results are in line with classical theory in which we adapt thickness dependent scattering terms in the Drude and Lorentz oscillators.
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Submitted 19 November, 2015;
originally announced November 2015.
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Numerical and experimental studies of the carbon etching in EUV-induced plasma
Authors:
D. I. Astakhov,
W. J. Goedheer,
C. J. Lee,
V. V. Ivanov,
V. M. Krivtsun,
O. Yakushev,
K. N. Koshelev,
D. V. Lopaev,
F. Bijkerk
Abstract:
We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion e…
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We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate.
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Submitted 17 February, 2016; v1 submitted 9 July, 2015;
originally announced July 2015.
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Plasma probe characteristics in low density hydrogen pulsed plasmas
Authors:
D. I. Astakhov,
W. J. Goedheer,
C. J. Lee,
V. V. Ivanov,
V. M. Krivtsun,
A. I. Zotovich,
S. M. Zyryanov,
D. V. Lopaev,
F. Bijkerk
Abstract:
Probe theories are only applicable in the regime where the probe's perturbation of the plasma can be neglected. However, it is not always possible to know, a priori, that a particular probe theory can be successfully applied, especially in low density plasmas. This is especially difficult in the case of transient, low density plasmas. Here, we applied probe diagnostics in combination with a 2D par…
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Probe theories are only applicable in the regime where the probe's perturbation of the plasma can be neglected. However, it is not always possible to know, a priori, that a particular probe theory can be successfully applied, especially in low density plasmas. This is especially difficult in the case of transient, low density plasmas. Here, we applied probe diagnostics in combination with a 2D particle-in-cell model, to an experiment with a pulsed low density hydrogen plasma. The calculations took into account the full chamber geometry, including the plasma probe as an electrode in the chamber. It was found that the simulations reproduce the time evolution of the probe IV characteristics with good accuracy. The disagreement between the simulated and probe measured plasma density is attributed to the limited applicability of probe theory to measurements of low density pulsed plasmas. Indeed, in the case studied here, probe measurements would lead to a large overestimate of the plasma density. In contrast, the simulations of the plasma evolution and the probe characteristics do not suffer from such strict applicability limits. These studies show that probe theory cannot be justified through probe measurements.
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Submitted 9 December, 2014;
originally announced December 2014.
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Characterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source
Authors:
A Dolgov,
D Lopaev,
C J Lee,
E Zoethout,
V. Medvedev,
O Yakushev,
F Bijkerk
Abstract:
Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiation from a pulsed tin plasma discharge. Our studies show that the film is chemically inert and has characteristics that are typical for a hydrogenated amorphous carbon film. It was experimentally observed that the film co…
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Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiation from a pulsed tin plasma discharge. Our studies show that the film is chemically inert and has characteristics that are typical for a hydrogenated amorphous carbon film. It was experimentally observed that the film consists of carbon (~70 at. %), oxygen (~20 at. %) and hydrogen (bound to oxygen and carbon), along with a few at. % of tin. Most of the oxygen and hydrogen are most likely present as OH groups, chemically bound to carbon, indicating an important role for adsorbed water during the film formation process. It was observed that the film is predominantly sp3 hybridized carbon, as is typical for diamond-like carbon. The Raman spectra of the film, under 514 and 264 nm excitation, are typical for hydrogenated diamond-like carbon. Additionally, the lower etch rate and higher energy threshold in chemical ion sputtering in H2 plasma, compared to magnetron-sputtered carbon films, suggests that the film exhibits diamond-like carbon properties.
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Submitted 17 November, 2014;
originally announced November 2014.
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Discharge-produced plasma extreme ultraviolet (EUV) source and ultra high vacuum chamber for studying EUV-induced processes
Authors:
A Dolgov,
O Yakushev,
A Abrikosov,
E Snegirev,
V M Krivtsun,
C J Lee,
F Bijkerk
Abstract:
An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an UHV experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the phys…
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An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an UHV experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed.
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Submitted 17 November, 2014;
originally announced November 2014.
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Graphene defect formation by extreme ultraviolet generated photoelectrons
Authors:
A. Gao,
C. J. Lee,
F. Bijkerk
Abstract:
We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80 eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman…
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We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80 eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene is not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.
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Submitted 25 August, 2014;
originally announced August 2014.
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Extreme ultraviolet radiation induced defects in single-layer graphene
Authors:
A. Gao,
E. Zoethout,
J. M. Sturm,
C. J. Lee,
F. Bijkerk
Abstract:
We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and disrupting the network of sp2 bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow…
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We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and disrupting the network of sp2 bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow after EUV irradiation with increasing water partial pressure in the exposure chamber. Temperature-programmed desorption (TPD) experiments prove that EUV radiation results in water dissociation on the graphene surface. The oxidation of graphene, caused by water dissociation, is triggered by photon and/or photoelectron induced dissociation of water. Our studies show that the EUV photons cleave the sp2 bonds, forming sp3 bonds, leading to defects in graphene.
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Submitted 3 January, 2014;
originally announced January 2014.
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Comparison of H2 and He carbon cleaning mechanisms in extreme ultraviolet induced and surface wave discharge plasmas
Authors:
A Dolgov,
D Lopaev,
T Rachimova,
A Kovalev,
A Vasilyeva,
C J Lee,
V M Krivtsun,
O Yakushev,
F Bijkerk
Abstract:
Cleaning of contamination of optical surfaces by amorphous carbon (a-C) is highly relevant for extreme ultraviolet (EUV) lithography. We have studied the mechanisms for a-C removal from a Si surface. By comparing a-C removal in a surface wave discharge (SWD) plasma and an EUV-induced plasma, the cleaning mechanisms for hydrogen and helium gas environments were determined. The C-atom removal per in…
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Cleaning of contamination of optical surfaces by amorphous carbon (a-C) is highly relevant for extreme ultraviolet (EUV) lithography. We have studied the mechanisms for a-C removal from a Si surface. By comparing a-C removal in a surface wave discharge (SWD) plasma and an EUV-induced plasma, the cleaning mechanisms for hydrogen and helium gas environments were determined. The C-atom removal per incident ion was estimated for different sample bias voltages and ion fluxes. It was found that H2 plasmas generally had higher cleaning rates than He plasmas: up to seven times higher for more negatively biased samples in EUV induced plasma. Moreover, for H2, EUV induced plasma was found to be 2-3 times more efficient at removing carbon than the SWD plasma. It was observed carbon removal during exposure to He is due to physical sputtering by He+ ions. In H2, on the other hand, the increase in carbon removal rates is due to chemical sputtering. This is a new C cleaning mechanism for EUV-induced plasma, which we call "EUV-reactive ion sputtering".
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Submitted 15 October, 2013;
originally announced October 2013.
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Model independent X-ray standing wave analysis of periodic multilayer structures
Authors:
S. N. Yakunin,
I. A. Makhotkin,
M. A. Chuev,
E. M. Pashaev,
E. Zoethout,
E. Louis,
R. W. E. van de Kruijs,
S. Yu. Seregin,
I. A. Subbotin,
D. V. Novikov,
F. Bijkerk,
M. V. Kovalchuk
Abstract:
We present a model independent approach for the reconstruction of the atomic concentration profile in a nanoscale layered structure, as measured using the X-ray fluorescence yield modulated by an X-ray standing wave (XSW). The approach is based on the direct regularized solution of the system of linear equations that characterizes the fluorescence yield. The suggested technique was optimized for,…
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We present a model independent approach for the reconstruction of the atomic concentration profile in a nanoscale layered structure, as measured using the X-ray fluorescence yield modulated by an X-ray standing wave (XSW). The approach is based on the direct regularized solution of the system of linear equations that characterizes the fluorescence yield. The suggested technique was optimized for, but not limited to, the analysis of periodic layered structures where the XSW is formed under Bragg conditions. The developed approach was applied to the reconstruction of the atomic concentration profiles for LaN/BN multilayers with 50 periods of 35 A thick layers. The object is especially difficult to analyse with traditional methods, as the estimated thickness of the interface region between the constituent materials is comparable to the individual layer thicknesses. However, using the suggested technique it was possible to reconstruct the La atomic profile, showing that the La atoms stay localized within the LaN layers and interfaces and do not diffuse into the BN layer. The atomic distributions were found with an accuracy of 1 A. The analysis of the Kr fluorescence yield showed that Kr atoms originating from the sputter gas are trapped in both the LaN-on-BN and the BN-on-LaN interfaces.
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Submitted 12 September, 2013;
originally announced September 2013.
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EUV induced defects on few-layer graphene
Authors:
A. Gao,
P. J. Rizo,
E. Zoethout,
L. Scaccabarozzi,
C. J. Lee,
V. Banine,
F. Bijkerk
Abstract:
We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy (XPS) resu…
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We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy (XPS) results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.
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Submitted 16 April, 2013;
originally announced April 2013.
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Ellipsometry with an undetermined polarization state
Authors:
Feng Liu,
Chris J. Lee,
Juequan Chen,
Eric Louis,
Peter J. M. van der Slot,
Klaus J. Boller,
Fred Bijkerk
Abstract:
We show that, under the right conditions, one can make highly accurate polarization-based measurements without knowing the absolute polarization state of the probing light field. It is shown that light, passed through a randomly varying birefringent material has a well-defined orbit on the Poincare sphere, which we term a generalized polarization state, that is preserved. Changes to the generalize…
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We show that, under the right conditions, one can make highly accurate polarization-based measurements without knowing the absolute polarization state of the probing light field. It is shown that light, passed through a randomly varying birefringent material has a well-defined orbit on the Poincare sphere, which we term a generalized polarization state, that is preserved. Changes to the generalized polarization state can then be used in place of the absolute polarization states that make up the generalized state, to measure the change in polarization due to a sample under investigation. We illustrate the usefulness of this analysis approach by demonstrating fiber-based ellipsometry, where the polarization state of the probe light is unknown, and, yet, the ellipsometric angles of the investigated sample ($Ψ$ and $Δ$) are obtained with an accuracy comparable to that of conventional ellipsometry instruments by measuring changes to the generalized polarization state.
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Submitted 18 October, 2011;
originally announced October 2011.
