Efficient and Scalable GaInAs Thermophotovoltaic Devices
Authors:
Eric J. Tervo,
Ryan M. France,
Daniel J. Friedman,
Madhan K. Arulanandam,
Richard R. King,
Tarun C. Narayan,
Cecilia Luciano,
Dustin P. Nizamian,
Benjamin A. Johnson,
Alexandra R. Young,
Leah Y. Kuritzky,
Emmett E. Perl,
Moritz Limpinsel,
Brendan M. Kayes,
Andrew J. Ponec,
David M. Bierman,
Justin A. Briggs,
Myles A. Steiner
Abstract:
Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm$^2$), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8$\pm$2.0% and an electrical powe…
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Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm$^2$), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8$\pm$2.0% and an electrical power density of 3.78 W/cm$^2$ at an emitter temperature of 1850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs / 0.74-eV GaInAs device illustrate this promise.
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Submitted 1 July, 2022;
originally announced July 2022.
Radiative thermal runaway due to negative differential thermal emission across a solid-solid phase transition
Authors:
David M. Bierman,
Andrej Lenert,
Mikhail A. Kats,
You Zhou,
Shuyan Zhang,
Matthew De La Ossa,
Shriram Ramanathan,
Federico Capasso,
Evelyn N. Wang
Abstract:
Thermal runaway occurs when a rise in system temperature results in heat generation rates exceeding dissipation rates. Here we demonstrate that thermal runaway occurs in thermal radiative systems, given a sufficient level of negative differential thermal emission. By exploiting the insulator-to-metal phase transition of vanadium dioxide, we show that a small increase in heat generation (e.g., 10 n…
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Thermal runaway occurs when a rise in system temperature results in heat generation rates exceeding dissipation rates. Here we demonstrate that thermal runaway occurs in thermal radiative systems, given a sufficient level of negative differential thermal emission. By exploiting the insulator-to-metal phase transition of vanadium dioxide, we show that a small increase in heat generation (e.g., 10 nW/mm2) can result in a large change in surface temperature (e.g., ~35 K), as the thermal emitter switches from high emissivity to low emissivity. While thermal runaway is typically associated with catastrophic failure mechanisms, detailed understanding and control of this phenomenon may give rise to new opportunities in infrared sensing, camouflage, and rectification.
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Submitted 31 December, 2017;
originally announced January 2018.
