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Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond
Authors:
Eric I. Rosenthal,
Souvik Biswas,
Giovanni Scuri,
Hope Lee,
Abigail J. Stein,
Hannah C. Kleidermacher,
Jakob Grzesik,
Alison E. Rugar,
Shahriar Aghaeimeibodi,
Daniel Riedel,
Michael Titze,
Edward S. Bielejec,
Joonhee Choi,
Christopher P. Anderson,
Jelena Vuckovic
Abstract:
The negatively charged tin-vacancy center in diamond (SnV$^-$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV$^-$'s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 Kelvin. Here, we demonstrate measurement of a single SnV$^-$ e…
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The negatively charged tin-vacancy center in diamond (SnV$^-$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV$^-$'s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 Kelvin. Here, we demonstrate measurement of a single SnV$^-$ electronic spin with a single-shot readout fidelity of $87.4\%$, which can be further improved to $98.5\%$ by conditioning on multiple readouts. We show this performance is compatible with rapid microwave spin control, demonstrating that the trade-off between optical readout and spin control inherent to group-IV centers in diamond can be overcome for the SnV$^-$. Finally, we use weak quantum measurement to study measurement induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and makes use of the qubit's spin coherence as a metrological tool. Taken together, these results overcome an important hurdle in the development of the SnV$^-$ based quantum technologies, and in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters.
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Submitted 19 March, 2024;
originally announced March 2024.
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Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO
Authors:
Vasileios Niaouris,
Samuel H. D'Ambrosia,
Christian Zimmermann,
Xingyi Wang,
Ethan R. Hansen,
Michael Titze,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which impact the spin-photon interface include radiative lifetime, optical inhomogeneous and homogeneous linewidth and optical depth. We study the donor-bound excito…
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Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which impact the spin-photon interface include radiative lifetime, optical inhomogeneous and homogeneous linewidth and optical depth. We study the donor-bound exciton optical linewidth properties of Al, Ga, and In donors in single-crystal ZnO. The ensemble photoluminescence linewidth ranges from 4-11 GHz, less than two orders of magnitude larger than the expected lifetime-limited linewidth. The ensemble linewidth remains narrow in absorption through samples with an estimated optical depth up to several hundred. The primary thermal relaxation mechanism is identified and found to have a negligible contribution to the total linewidth at 2 K. We find that inhomogeneous broadening due to the disordered isotopic environment in natural ZnO is significant, contributing 2 GHz. Two-laser spectral hole burning measurements, indicate the dominant mechanism, however, is homogeneous. Despite this broadening, the high homogeneity, large optical depth and potential for isotope purification indicate that the optical properties of the ZnO donor-bound exciton are promising for a wide range of quantum technologies and motivate a need to improve the isotope and chemical purity of ZnO for quantum technologies.
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Submitted 17 January, 2024; v1 submitted 24 July, 2023;
originally announced July 2023.
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Detection and modeling of hole capture by single point defects under variable electric fields
Authors:
Artur Lozovoi,
YunHeng Chen,
Gyorgy Vizkelethy,
Edward Bielejec,
Johannes Flick,
Marcus W. Doherty,
Carlos A. Meriles
Abstract:
Understanding carrier trap** in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an ex…
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Understanding carrier trap** in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semi-classical Monte Carlo simulations modeling carrier trap** through a cascade process of phonon emission, and obtain electric-field-dependent capture probabilities in good agreement with experiment. Since the mechanisms at play are insensitive to the trap characteristics, the capture cross sections we observe - largely exceeding those derived from ensemble measurements - should also be present in materials platforms other than diamond.
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Submitted 2 June, 2023;
originally announced June 2023.
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Hyperfine Spectroscopy of Isotopically Engineered Group-IV Color Centers in Diamond
Authors:
Isaac B. W. Harris,
Cathryn P. Michaels,
Kevin C. Chen,
Ryan A. Parker,
Michael Titze,
Jesus Arjona Martinez,
Madison Sutula,
Ian R. Christen,
Alexander M. Stramma,
William Roth,
Carola M. Purser,
Martin Hayhurst Appel,
Chao Li,
Matthew E. Trusheim,
Nicola L. Palmer,
Matthew L. Markham,
Edward S. Bielejec,
Mete Atature,
Dirk Englund
Abstract:
A quantum register coupled to a spin-photon interface is a key component in quantum communication and information processing. Group-IV color centers in diamond (SiV, GeV, and SnV) are promising candidates for this application, comprising an electronic spin with optical transitions coupled to a nuclear spin as the quantum register. However, the creation of a quantum register for these color centers…
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A quantum register coupled to a spin-photon interface is a key component in quantum communication and information processing. Group-IV color centers in diamond (SiV, GeV, and SnV) are promising candidates for this application, comprising an electronic spin with optical transitions coupled to a nuclear spin as the quantum register. However, the creation of a quantum register for these color centers with deterministic and strong coupling to the spin-photon interface remains challenging. Here, we make first-principles predictions of the hyperfine parameters of the group-IV color centers, which we verify experimentally with a comprehensive comparison between the spectra of spin active and spin neutral intrinsic dopant nuclei in single GeV and SnV emitters. In line with the theoretical predictions, detailed spectroscopy on large sample sizes reveals that hyperfine coupling causes a splitting of the optical transition of SnV an order of magnitude larger than the optical linewidth and provides a magnetic-field insensitive transition. This strong coupling provides access to a new regime for quantum registers in diamond color centers, opening avenues for novel spin-photon entanglement and quantum sensing schemes for these well-studied emitters.
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Submitted 6 June, 2023; v1 submitted 31 May, 2023;
originally announced June 2023.
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Properties of donor qubits in ZnO formed by indium ion implantation
Authors:
Xingyi Wang,
Christian Zimmermann,
Michael Titze,
Vasileios Niaouris,
Ethan R. Hansen,
Samuel H. D'Ambrosia,
Lasse Vines,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, c…
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Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.
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Submitted 14 June, 2023; v1 submitted 10 December, 2022;
originally announced December 2022.
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Large-scale optical characterization of solid-state quantum emitters
Authors:
Madison Sutula,
Ian Christen,
Eric Bersin,
Michael P. Walsh,
Kevin C. Chen,
Justin Mallek,
Alexander Melville,
Michael Titze,
Edward S. Bielejec,
Scott Hamilton,
Danielle Braje,
P. Benjamin Dixon,
Dirk R. Englund
Abstract:
Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color center…
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Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color centers by registering them to a fabricated machine-readable global coordinate system, enabling systematic comparison of the same color center sites over many experiments. We then implement resonant photoluminescence excitation in a widefield cryogenic microscope to parallelize resonant spectroscopy, achieving two orders of magnitude speed-up over confocal microscopy. Finally, we demonstrate automated chip-scale characterization of color centers and devices at room temperature, imaging thousands of microscope fields of view. These tools will enable accelerated identification of useful quantum emitters at chip-scale, enabling advances in scaling up color center platforms for quantum information applications, materials science, and device design and characterization.
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Submitted 24 October, 2022;
originally announced October 2022.
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Directional Detection of Dark Matter Using Solid-State Quantum Sensing
Authors:
Reza Ebadi,
Mason C. Marshall,
David F. Phillips,
Johannes Cremer,
Tao Zhou,
Michael Titze,
Pauli Kehayias,
Maziar Saleh Ziabari,
Nazar Delegan,
Surjeet Rajendran,
Alexander O. Sushkov,
F. Joseph Heremans,
Edward S. Bielejec,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high…
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Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high-density target material. A detector of this type operates in a hybrid mode. The WIMP or neutrino-induced nuclear recoil is detected using real-time charge, phonon, or photon collection. The directional signal, however, is imprinted as a durable sub-micron damage track in the lattice structure. This directional signal can be read out by a variety of atomic physics techniques, from point defect quantum sensing to x-ray microscopy. In this white paper, we present the detector principle and review the status of the experimental techniques required for directional readout of nuclear recoil tracks. Specifically, we focus on diamond as a target material; it is both a leading platform for emerging quantum technologies and a promising component of next-generation semiconductor electronics. Based on the development and demonstration of directional readout in diamond over the next decade, a future WIMP detector will leverage or motivate advances in multiple disciplines towards precision dark matter and neutrino physics.
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Submitted 14 June, 2023; v1 submitted 11 March, 2022;
originally announced March 2022.
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Imaging dark charge emitters in diamond via carrier-to-photon conversion
Authors:
Artur Lozovoi,
Gyorgy Vizkelethy,
Edward Bielejec,
Carlos A. Meriles
Abstract:
The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV-) center in diamond as we illuminate its vicinity…
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The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV-) center in diamond as we illuminate its vicinity. Cyclic charge state conversion of neighboring point defects sensitive to the excitation beam leads to a position-dependent stream of photo-generated carriers whose capture by the probe NV- leads to a fluorescence change. This "charge-to-photon" conversion scheme allows us to image other individual point defects surrounding the probe NV, including non-fluorescent "single-charge emitters" that would otherwise remain unnoticed. Given the ubiquity of color center photo-chromism, this strategy may likely find extensions to material systems other than diamond.
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Submitted 13 January, 2022;
originally announced January 2022.
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Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond
Authors:
Jacob Henshaw,
Pauli Kehayias,
Maziar Saleh Ziabari,
Michael Titze,
Erin Morissette,
Kenji Watanabe,
Takashi Taniguchi,
J. I. A Li,
Victor M. Acosta,
Edward Bielejec,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in…
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Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials. The nitrogen-vacancy (NV) center in diamond has shown promise in bringing the analytic power of NMR and NQR spectroscopy to the nanoscale. However, due to depth-dependent formation efficiency of the defect centers, noise from surface spins, band bending effects, and the depth dependence of the nuclear magnetic field, there is ambiguity regarding the ideal NV depth for surface NMR of statistically-polarized spins. In this work, we prepared a range of shallow NV ensemble layer depths and determined the ideal NV depth by performing NMR spectroscopy on statistically-polarized \fluorine{} in Fomblin oil on the diamond surface. We found that the measurement time needed to achieve an SNR of 3 using XY8-N noise spectroscopy has a minimum at an NV depth of 5.4 nm. To demonstrate the sensing capabilities of NV ensembles, we perform NQR spectroscopy on the \boron{} of hexagonal boron nitride flakes. We compare our best diamond to previous work with a single NV and find that this ensemble provides a shorter measurement time with excitation diameters as small as 4 $μ$m. This analysis provides ideal conditions for further experiments involving NMR/NQR spectroscopy of 2-D materials with magnetic properties.
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Submitted 29 December, 2021;
originally announced December 2021.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
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Optical activation and detection of charge transport between individual color centers in room-temperature diamond
Authors:
Artur Lozovoi,
Harishankar Jayakumar,
Damon Daw,
Gyorgy Vizkelethy,
Edward Bielejec,
Marcus W. Doherty,
Johannes Flick,
Carlos A. Meriles
Abstract:
Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a…
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Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a "source" NV undergoes optically-driven cycles of ionization and recombination to produce a stream of photo-generated carriers, one of which we subsequently capture via a "target" NV several micrometers away. We use a spin-to-charge conversion scheme to encode the spin state of the source color center into the charge state of the target, in the process allowing us to set an upper bound to carrier injection from other background defects. We attribute our observations to the action of unscreened Coulomb potentials producing giant carrier capture cross-sections, orders of magnitude greater than those typically attained in ensemble measurements. Besides their fundamental interest, these results open intriguing prospects in the use of free carriers as a quantum bus to mediate effective interactions between paramagnetic defects in a solid-state chip.
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Submitted 23 October, 2021;
originally announced October 2021.
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Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis
Authors:
P. Kehayias,
E. V. Levine,
L. Basso,
J. Henshaw,
M. Saleh Ziabari,
M. Titze,
R. Haltli,
J. Okoro,
D. R. Tibbetts,
D. M. Udoni,
E. Bielejec,
M. P. Lilly,
T. M. Lu,
P. D. D. Schwindt,
A. M. Mounce
Abstract:
Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system…
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Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system" to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we used a SPICE electronic circuit simulator and Finite Element Analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.
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Submitted 19 January, 2022; v1 submitted 23 September, 2021;
originally announced September 2021.
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Coherent Interactions Between Silicon-Vacancy Centers in Diamond
Authors:
Matthew W. Day,
Kelsey M. Bates,
Christopher L. Smallwood,
Rachel C. Owen,
Tim Schröder,
Edward Bielejec,
Ronald Ulbricht,
Steven T. Cundiff
Abstract:
We report coherent interactions within an ensemble of silicon-vacancy color centers in diamond. The interactions are ascribed to resonant dipole-dipole coupling. Further, we demonstrate control over resonant center pairs by using a driving optical pulse to induce collective, interaction-enabled Rabi-oscillations in the ensemble. Non-resonant center pairs do not undergo collective oscillations.
We report coherent interactions within an ensemble of silicon-vacancy color centers in diamond. The interactions are ascribed to resonant dipole-dipole coupling. Further, we demonstrate control over resonant center pairs by using a driving optical pulse to induce collective, interaction-enabled Rabi-oscillations in the ensemble. Non-resonant center pairs do not undergo collective oscillations.
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Submitted 3 May, 2021;
originally announced May 2021.
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Using silicon-vacancy centers in diamond to probe the full strain tensor
Authors:
Kelsey M. Bates,
Matthew W. Day,
Christopher L. Smallwood,
Rachel C. Owen,
Ronald Ulbricht,
Tim Schröder,
Edward Bielejec,
Steven T. Cundiff
Abstract:
An ensemble of silicon vacancy centers in diamond (\ce{SiV-}) is probed using two coherent spectroscopy techniques. Two main distinct families of \ce{SiV-} centers are identified using multidimensional coherent spectroscopy, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the m…
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An ensemble of silicon vacancy centers in diamond (\ce{SiV-}) is probed using two coherent spectroscopy techniques. Two main distinct families of \ce{SiV-} centers are identified using multidimensional coherent spectroscopy, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Such measurements are made at multiple points on the sample surface and variations in the strain tensor are observed.
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Submitted 19 April, 2021;
originally announced April 2021.
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A fitting algorithm for optimizing ion implantation energies and fluences
Authors:
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Michael Titze,
Edward Bielejec,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we…
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We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $μ$m surface layers of $^{15}$N or vacancies (using $^4$He).
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Submitted 27 May, 2021; v1 submitted 3 March, 2021;
originally announced March 2021.
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Hidden Silicon-Vacancy Centers in Diamond
Authors:
Christopher L. Smallwood,
Ronald Ulbricht,
Matthew W. Day,
Tim Schröder,
Kelsey M. Bates,
Travis M. Autry,
Geoffrey Diederich,
Edward Bielejec,
Mark E. Siemens,
Steven T. Cundiff
Abstract:
We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of \ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity an…
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We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of \ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic $T_2$ times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
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Submitted 5 May, 2021; v1 submitted 3 June, 2020;
originally announced June 2020.
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Large-scale integration of near-indistinguishable artificial atoms in hybrid photonic circuits
Authors:
Noel H. Wan,
Tsung-Ju Lu,
Kevin C. Chen,
Michael P. Walsh,
Matthew E. Trusheim,
Lorenzo De Santis,
Eric A. Bersin,
Isaac B. Harris,
Sara L. Mouradian,
Ian R. Christen,
Edward S. Bielejec,
Dirk Englund
Abstract:
A central challenge in develo** quantum computers and long-range quantum networks lies in the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state 'artificial atom' qubits, enabling on-demand remote entanglement, coherent control of over 10 ancillae qubits with minute-long coherence times, and memory-enhanced qua…
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A central challenge in develo** quantum computers and long-range quantum networks lies in the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state 'artificial atom' qubits, enabling on-demand remote entanglement, coherent control of over 10 ancillae qubits with minute-long coherence times, and memory-enhanced quantum communication. A critical next step is to integrate large numbers of artificial atoms with photonic architectures to enable large-scale quantum information processing systems. To date, these efforts have been stymied by qubit inhomogeneities, low device yield, and complex device requirements. Here, we introduce a process for the high-yield heterogeneous integration of 'quantum micro-chiplets' (QMCs) -- diamond waveguide arrays containing highly coherent colour centres -- with an aluminium nitride (AlN) photonic integrated circuit (PIC). Our process enables the development of a 72-channel defect-free array of germanium-vacancy (GeV) and silicon-vacancy (SiV) colour centres in a PIC. Photoluminescence spectroscopy reveals long-term stable and narrow average optical linewidths of 54 MHz (146 MHz) for GeV (SiV) emitters, close to the lifetime-limited linewidth of 32 MHz (93 MHz). Additionally, inhomogeneities in the individual qubits can be compensated in situ with integrated tuning of the optical frequencies over 100 GHz. The ability to assemble large numbers of nearly indistinguishable artificial atoms into phase-stable PICs provides an architecture toward multiplexed quantum repeaters and general-purpose quantum computers.
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Submitted 12 November, 2019;
originally announced November 2019.
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Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide
Authors:
Berk Diler,
Samuel J. Whiteley,
Christopher P. Anderson,
Gary Wolfowicz,
Marie E. Wesson,
Edward S. Bielejec,
F. Joseph Heremans,
David Awschalom
Abstract:
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commer…
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Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 second at cryogenic temperatures (15 K) with a T2* = 317 nanoseconds and a T2 = 81 microseconds, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
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Submitted 18 September, 2019;
originally announced September 2019.
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New Technologies for Discovery
Authors:
Z. Ahmed,
A. Apresyan,
M. Artuso,
P. Barry,
E. Bielejec,
F. Blaszczyk,
T. Bose,
D. Braga,
S. A. Charlebois,
A. Chatterjee,
A. Chavarria,
H. -M. Cho,
S. Dalla Torre,
M. Demarteau,
D. Denisov,
M. Diefenthaler,
A. Dragone,
F. Fahim,
C. Gee,
S. Habib,
G. Haller,
J. Hogan,
B. J. P. Jones,
M. Garcia-Sciveres,
G. Giacomini
, et al. (58 additional authors not shown)
Abstract:
For the field of high energy physics to continue to have a bright future, priority within the field must be given to investments in the development of both evolutionary and transformational detector development that is coordinated across the national laboratories and with the university community, international partners and other disciplines. While the fundamental science questions addressed by hi…
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For the field of high energy physics to continue to have a bright future, priority within the field must be given to investments in the development of both evolutionary and transformational detector development that is coordinated across the national laboratories and with the university community, international partners and other disciplines. While the fundamental science questions addressed by high energy physics have never been more compelling, there is acute awareness of the challenging budgetary and technical constraints when scaling current technologies. Furthermore, many technologies are reaching their sensitivity limit and new approaches need to be developed to overcome the currently irreducible technological challenges. This situation is unfolding against a backdrop of declining funding for instrumentation, both at the national laboratories and in particular at the universities. This trend has to be reversed for the country to continue to play a leadership role in particle physics, especially in this most promising era of imminent new discoveries that could finally break the hugely successful, but limited, Standard Model of fundamental particle interactions. In this challenging environment it is essential that the community invest anew in instrumentation and optimize the use of the available resources to develop new innovative, cost-effective instrumentation, as this is our best hope to successfully accomplish the mission of high energy physics. This report summarizes the current status of instrumentation for high energy physics, the challenges and needs of future experiments and indicates high priority research areas.
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Submitted 10 August, 2019; v1 submitted 31 July, 2019;
originally announced August 2019.
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Controlling light emission by engineering atomic geometries in silicon photonics
Authors:
Arindam Nandi,
Xiaodong Jiang,
Dongmin Pak,
Daniel Perry,
Kyunghun Han,
Edward S Bielejec,
Yi Xuan,
Mahdi Hosseini
Abstract:
By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of…
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By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of light emission to the atomic positions and lattice spacing and also observe Fano interference between resonant modes in the system.
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Submitted 12 March, 2020; v1 submitted 24 February, 2019;
originally announced February 2019.
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Spectral alignment of single-photon emitters in diamond using strain gradient
Authors:
Smarak Maity,
Linbo Shao,
Young-Ik Sohn,
Srujan Meesala,
Bartholomeus Machielse,
Edward Bielejec,
Matthew Markham,
Marko Loncar
Abstract:
Solid-state single-photon emitters are attractive for realization of integrated quantum systems due to their experimental convenience and scalability. Unfortunately, however, their complex mesoscopic environments cause photons from different emitters to be spectrally distinguishable. Here we demonstrate spectral alignment of two solid-state single-photon emitters by utilizing the strain gradient.…
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Solid-state single-photon emitters are attractive for realization of integrated quantum systems due to their experimental convenience and scalability. Unfortunately, however, their complex mesoscopic environments cause photons from different emitters to be spectrally distinguishable. Here we demonstrate spectral alignment of two solid-state single-photon emitters by utilizing the strain gradient. Multiple germanium vacancy (GeV) color centers in diamond are created in fabricated diamond microcantilevers using focused ion beam implantation. The strain response of the electronic energy levels of the GeV is measured by inducing an electrically controlled strain in the device. Leveraging the large strain gradient, we tune two GeVs in the spot to emit at the same optical wavelength. Simultaneous resonant excitation of two spectrally aligned GeVs is demonstrated using a narrow linewidth laser. This strain gradient tuning can be used to realize spectrally identical quantum emitters for on-chip integrated quantum systems.
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Submitted 18 July, 2018;
originally announced July 2018.
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Photon-mediated interactions between quantum emitters in a diamond nanocavity
Authors:
Ruffin E. Evans,
Mihir K. Bhaskar,
Denis D. Sukachev,
Christian T. Nguyen,
Alp Sipahigil,
Michael J. Burek,
Bartholomeus Machielse,
Grace H. Zhang,
Alexander S. Zibrov,
Edward Bielejec,
Hongkun Park,
Marko Lončar,
Mikhail D. Lukin
Abstract:
Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode r…
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Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally-resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically-mediated interactions. Our experiments pave the way for implementation of cavity-mediated quantum gates between spin qubits and for realization of scalable quantum network nodes.
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Submitted 11 July, 2018;
originally announced July 2018.
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Strain engineering of the silicon-vacancy center in diamond
Authors:
Srujan Meesala,
Young-Ik Sohn,
Benjamin **ault,
Linbo Shao,
Haig A. Atikian,
Jeffrey Holzgrafe,
Mustafa Gundogan,
Camille Stavrakas,
Alp Sipahigil,
Cleaven Chia,
Michael J. Burek,
Mian Zhang,
Lue Wu,
Jose L. Pacheco,
John Abraham,
Edward Bielejec,
Mikhail D. Lukin,
Mete Atature,
Marko Loncar
Abstract:
We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing larg…
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We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
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Submitted 31 January, 2018; v1 submitted 29 January, 2018;
originally announced January 2018.
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Ion Implantation for Deterministic Single Atom Devices
Authors:
J. L. Pacheco,
M. Singh,
D. L. Perry,
J. R. Wendt,
G. Ten Eyck,
R. P. Manginell,
T. Pluym,
D. R. Luhman,
M. P. Lilly,
M. S. Carroll,
E. Bielejec
Abstract:
We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom device…
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We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
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Submitted 2 November, 2017;
originally announced November 2017.
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Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations
Authors:
J. L. Pacheco,
D. L. Perry,
D. R. Hughart,
M. Marinella,
E. Bielejec
Abstract:
We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a C…
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We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.
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Submitted 25 October, 2017;
originally announced October 2017.
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A bright nanowire single photon source based on SiV centers in diamond
Authors:
L. Marseglia,
K. Saha,
A. Ajoy,
T. Schröder,
D. Englund,
F. Jelezko,
R. Walsworth,
J. L. Pacheco,
D. L. Perry,
E. S. Bielejec,
P. Cappellaro
Abstract:
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon…
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The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV- centers, targeted to fabricated nanowires. The co-localization of single SiV- centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV- centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV- creation method, enables a new class of devices for integrated photonics and quantum science.
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Submitted 18 August, 2017;
originally announced August 2017.
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Controlling the coherence of a diamond spin qubit through strain engineering
Authors:
Young-Ik Sohn,
Srujan Meesala,
Benjamin **ault,
Haig A. Atikian,
Jeffrey Holzgrafe,
Mustafa Gundogan,
Camille Stavrakas,
Megan J. Stanley,
Alp Sipahigil,
Joonhee Choi,
Mian Zhang,
Jose L. Pacheco,
John Abraham,
Edward Bielejec,
Mikhail D. Lukin,
Mete Atature,
Marko Loncar
Abstract:
The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of opera…
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The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of operation. Here, we use a nano-electro-mechanical system (NEMS) to mitigate the effect of thermal phonons on a solid-state quantum emitter without changing the system temperature. We study the silicon-vacancy (SiV) colour centre in diamond which has optical and spin transitions that are highly sensitive to phonons. First, we show that its electronic orbitals are highly susceptible to local strain, leading to its high sensitivity to phonons. By controlling the strain environment, we manipulate the electronic levels of the emitter to probe, control, and eventually, suppress its interaction with the thermal phonon bath. Strain control allows for both an impressive range of optical tunability and significantly improved spin coherence. Finally, our findings indicate that it may be possible to achieve strong coupling between the SiV spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics.
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Submitted 31 January, 2018; v1 submitted 12 June, 2017;
originally announced June 2017.
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A fiber-coupled diamond quantum nanophotonic interface
Authors:
Michael J. Burek,
Charles Meuwly,
Ruffin E. Evans,
Mihir K. Bhaskar,
Alp Sipahigil,
Srujan Meesala,
Denis D. Sukachev,
Christian T. Nguyen,
Jose L. Pacheco,
Edward Bielejec,
Mikhail D. Lukin,
Marko Lončar
Abstract:
Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power…
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Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power coupling at visible wavelengths. We use this approach to demonstrate a bright source of narrowband single photons, based on a silicon-vacancy color center embedded within a waveguide-coupled diamond photonic crystal cavity. Our fiber-coupled diamond quantum nanophotonic interface results in a high flux of coherent single photons into a single mode fiber, enabling new possibilities for realizing quantum networks that interface multiple emitters, both on-chip and separated by long distances.
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Submitted 29 March, 2017; v1 submitted 15 December, 2016;
originally announced December 2016.
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Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
Authors:
Tim Schröder,
Matthew E. Trusheim,
Michael Walsh,
Luozhou Li,
Jiabao Zheng,
Marco Schukraft,
Jose L. Pacheco,
Ryan M. Camacho,
Edward S. Bielejec,
Alp Sipahigil,
Ruffin E. Evans,
Denis D. Sukachev,
Christian T. Nguyen,
Mikhail D. Lukin,
Dirk Englund
Abstract:
The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm…
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The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices.
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Submitted 29 October, 2016;
originally announced October 2016.
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Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System
Authors:
Alp Sipahigil,
Ruffin E. Evans,
Denis D. Sukachev,
Michael J. Burek,
Johannes Borregaard,
Mihir K. Bhaskar,
Christian T. Nguyen,
Jose L. Pacheco,
Haig A. Atikian,
Charles Meuwly,
Ryan M. Camacho,
Fedor Jelezko,
Edward Bielejec,
Hongkun Park,
Marko Lončar,
Mikhail D. Lukin
Abstract:
Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize…
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Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantum networks.
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Submitted 17 August, 2016;
originally announced August 2016.
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Silicon Quantum Dots with Counted Antimony Donor Implants
Authors:
M. Singh,
J. L. Pacheco,
D. Perry,
E. Garratt,
G. Ten Eyck,
N. C. Bishop,
J. R. Wendt,
R. P. Manginell,
J. Dominguez,
T. Pluym,
D. R. Luhman,
E. Bielejec,
M. P. Lilly,
M. S. Carroll
Abstract:
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In…
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Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
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Submitted 14 December, 2015;
originally announced December 2015.
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Triangulating tunneling resonances in a point contact
Authors:
Nathaniel C. Bishop,
Ralph W. Young,
Gregory A. Ten Eyck,
Joel R. Wend,
Edward S. Bielejec,
Kevin Eng,
Lisa A. Tracy,
Michael P. Lilly,
Malcolm S. Carroll,
Carlos Borrás Pinilla,
Harold L. Stalford
Abstract:
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances f…
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We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances from the resonant feature to each of the conducting gates and the source/drain two dimensional electron gas regions. In our device geometry, these capacitances provide information about the resonance location in three dimensions. Semi-classical electrostatic simulations of capacitance, already used to map quantum dot size and position, identify a combination of location and confinement potential size that satisfy our experimental observations. The sensitivity of simulation to position and size allow us to triangulate possible locations of the resonant level with nanometer resolution. We discuss our results and how they may apply to resonant tunneling through a single donor.
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Submitted 25 July, 2011;
originally announced July 2011.
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Single ion implantation for single donor devices using Geiger mode detectors
Authors:
E. Bielejec,
J. A. Seamons,
M. S. Carroll
Abstract:
Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Improving single ion detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility…
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Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Improving single ion detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 um from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ~600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm. Significant reduction in false count probability is achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as 1E-1 and 1E-4 for operation temperatures of 300K and 77K, respectively. Low temperature operation and reduced false, dark, counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 1E-4 at an average ion number per gated window of 0.015.
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Submitted 28 September, 2009;
originally announced September 2009.
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Measuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films
Authors:
Wenhao Wu,
E. Bielejec
Abstract:
Electron transport and tunneling across the superconductor-insulator (SI) transition have been measured simultaneously for quench-condensed ultrathin amorphous beryllium films. The anomalous negative magnetoresistance previously observed in insulating films disappears when Mn impurities are introduced to the films, restoring a rather clean Efros-Shklovskii type hop** behavior. The combination…
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Electron transport and tunneling across the superconductor-insulator (SI) transition have been measured simultaneously for quench-condensed ultrathin amorphous beryllium films. The anomalous negative magnetoresistance previously observed in insulating films disappears when Mn impurities are introduced to the films, restoring a rather clean Efros-Shklovskii type hop** behavior. The combination of transport and tunneling data allows us to determine, independently and up to a constant on the order of unity, the localization length, ξ_{L}, and the dielectric constant, κ, for the films. As the normal-state sheet resistance of the films at 20 K is reduced with increasing film thickness, ξ_{L} increases exponentially. The SI transition occurs when ξ_{L} crosses the Ginzburg-Landau coherence length, ξ_{S}.
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Submitted 4 November, 2005;
originally announced November 2005.
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Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system
Authors:
E. Bielejec,
J. A. Seamons,
J. L. Reno,
M. P. Lilly
Abstract:
We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control…
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We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected 2D-2D tunneling results, we have found additional tunneling features that are related to the 1D quantum wires.
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Submitted 10 November, 2004; v1 submitted 3 November, 2004;
originally announced November 2004.
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Measurement of the Localization Length through the superconductor-insulator transition of ultrathin amorphous beryllium films
Authors:
Wenhao Wu,
E. Bielejec
Abstract:
Based on the Efros-Shklovskii behavior observed in electron transport and tunneling, we have determined, independently and up to a constant on the order of unity, the localization length and the dielectric constant for quench-condensed ultrathin amorphous beryllium films. As the normal-state sheet resistance of the films at 20 K is reduced with increasing film thickness, the localization length…
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Based on the Efros-Shklovskii behavior observed in electron transport and tunneling, we have determined, independently and up to a constant on the order of unity, the localization length and the dielectric constant for quench-condensed ultrathin amorphous beryllium films. As the normal-state sheet resistance of the films at 20 K is reduced with increasing film thickness, the localization length increases exponentially. The superconductor-insulator transition occurs when the localization length crosses the Ginzburg-Landau coherence length. We discuss the implication of these results on a number of issues regarding superconductivity in the strongly disordered regime.
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Submitted 2 November, 2005; v1 submitted 8 October, 2003;
originally announced October 2003.
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The Field-Tuned Superconductor-Insulator Transition with and without Current Bias
Authors:
E. Bielejec,
Wenhao Wu
Abstract:
The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin Beryllium films quench-condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product vz = 1.35 +/- 0.10 and a critical sheet resistance R_{c} of about 1.2R_{Q}, with R_{Q} = h/4e^{2}. However, in the presence of dc bias currents that are smaller than the…
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The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin Beryllium films quench-condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product vz = 1.35 +/- 0.10 and a critical sheet resistance R_{c} of about 1.2R_{Q}, with R_{Q} = h/4e^{2}. However, in the presence of dc bias currents that are smaller than the zero-field critical currents, vz becomes 0.75 +/- 0.10. This new set of exponents suggests that the field-tuned transitions with and without dc bias currents belong to different universality classes.
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Submitted 30 October, 2001; v1 submitted 14 August, 2001;
originally announced August 2001.
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Anisotropic Magnetoconductance in Quench-Condensed Ultrathin Beryllium Films
Authors:
E. Bielejec,
J. Ruan,
Wenhao Wu
Abstract:
Near the superconductor-insulator (S-I) transition, quench-condensed ultrathin Be films show a large magnetoconductance which is highly anisotropic in the direction of the applied field. Film conductance can drop as much as seven orders of magnitude in a weak perpendicular field (< 1 T), but is insensitive to a parallel field in the same field range. We believe that this negative magnetoconducta…
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Near the superconductor-insulator (S-I) transition, quench-condensed ultrathin Be films show a large magnetoconductance which is highly anisotropic in the direction of the applied field. Film conductance can drop as much as seven orders of magnitude in a weak perpendicular field (< 1 T), but is insensitive to a parallel field in the same field range. We believe that this negative magnetoconductance is due to the field de-phasing of the superconducting pair wavefunction. This idea enables us to extract the finite superconducting phase coherence length in nearly superconducting films. Our data indicate that this local phase coherence persists even in highly insulating films in the vicinity of the S-I transition.
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Submitted 20 September, 2000; v1 submitted 18 September, 2000;
originally announced September 2000.
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Observation of a Hard Correlation Gap in Quench-Condensed Ultrathin Beryllium
Authors:
E. Bielejec,
J. Ruan,
Wenhao Wu
Abstract:
We report on the tunneling density of states (DOS) in ultrathin and strongly disordered Be films quench-condensed at 20 K. Above 5 K, the DOS shows the well-known logarithmic anomaly at the Fermi level. Only in a narrow temperature range near 2 K is the DOS linearly dependent on energy, as predicted by Efros and Shklovskii. However, both the zero-bias conductance and the slope of the linear DOS…
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We report on the tunneling density of states (DOS) in ultrathin and strongly disordered Be films quench-condensed at 20 K. Above 5 K, the DOS shows the well-known logarithmic anomaly at the Fermi level. Only in a narrow temperature range near 2 K is the DOS linearly dependent on energy, as predicted by Efros and Shklovskii. However, both the zero-bias conductance and the slope of the linear DOS are found to decrease drastically with decreasing temperature. Tunneling measurements at mK temperatures have revealed conclusively that a hard correlation gap opens up in the DOS.
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Submitted 23 August, 2000;
originally announced August 2000.
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Electron Glass in Ultrathin Granular Al Films at Low Temperatures
Authors:
E. Bielejec,
Wenhao Wu
Abstract:
Quench-condensed granular Al films, with normal-state sheet resistance close to 10 k$Ω/\Box$, display strong hysteresis and ultraslow, non-exponential relaxation in the resistance when temperature is varied below 300 mK. The hysteresis is nonlinear and can be suppressed by a dc bias voltage. The relaxation time does not obey the Arrhenius form, indicating the existence of a broad distribution of…
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Quench-condensed granular Al films, with normal-state sheet resistance close to 10 k$Ω/\Box$, display strong hysteresis and ultraslow, non-exponential relaxation in the resistance when temperature is varied below 300 mK. The hysteresis is nonlinear and can be suppressed by a dc bias voltage. The relaxation time does not obey the Arrhenius form, indicating the existence of a broad distribution of low energy barriers. Furthermore, large resistance fluctuations, having a 1/f-type power spectrum with a low-frequency cut-off, are observed at low temperatures. With decreasing temperature, the amplitude of the fluctuation increases and the cut-off frequency decreases. These observations combine to provide a coherent picture that there exists a new glassy electron state in ultrathin granular Al films, with a growing correlation length at low temperatures.
△ Less
Submitted 23 October, 2001; v1 submitted 28 July, 2000;
originally announced July 2000.
