-
Evaluation and thermodynamic optimization of phase diagram of lithium niobate tantalate solid solutions
Authors:
Umar Bashir,
Detlef Klimm,
Michael Rusing,
Matthias Bickermann,
Steffen Ganschow
Abstract:
The phase diagram of the lithium niobate and lithium tantalate solid solutions was investigated using experimental data from differential thermal analysis (DTA) and crystal growth. We used XRF analysis to determine the elemental composition of crystals. Based on the Neumann-Kopp rule, essential data of end members lithium niobate (LN) and lithium tantalate (LT) was created. The heats of fusion of…
▽ More
The phase diagram of the lithium niobate and lithium tantalate solid solutions was investigated using experimental data from differential thermal analysis (DTA) and crystal growth. We used XRF analysis to determine the elemental composition of crystals. Based on the Neumann-Kopp rule, essential data of end members lithium niobate (LN) and lithium tantalate (LT) was created. The heats of fusion of end members given by DTA measurements of LN (103 kJ/mol at 1531 K) and LT (289 kJ/mol at 1913 K) were given as input parameters to generate the data. This data served as the basis for calculating a phase diagram for LN and LT solid solutions. Finally, based on the experimental data and thermodynamic solution model, the phase diagram was optimized in the Calphad Factsage module. We also generated thermodynamic parameters for Gibb's excess energy of the solid solution. A plot of segregation coefficient as a function of Ta concentration was derived from the phase diagram.
△ Less
Submitted 12 March, 2024;
originally announced March 2024.
-
Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect
Authors:
I. Gamov,
J. L. Lyons,
G. Gärtner,
K. Irmscher,
E. Richter,
M. Weyers,
M. R. Wagner,
M. Bickermann
Abstract:
This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) do** in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with…
▽ More
This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) do** in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with defect properties predicted from first-principles calculations. The vibrational frequency shift in two $^{13}C$ enriched samples related to the effect of the isotope mass indicates six distinct configurations of the carbon-containing point defects. The effect of the isotope replacement is well reproduced by the density functional theory (DFT) calculations. Specific attention is paid to the most pronounced defects, namely tri-carbon complexes($C_N=C=C_N$) and carbon substituting for nitrogen $C_N$. The position of the transition level (+/0) in the bandgap found for $C_N=C=C_N$ defects by DFT at 1.1 eV above the valence band maximum, suggest that $(C_N=C=C_N)^+$ provides compensation of ${C_N}^-$. $C_N=C=C_N$ defects are observed to be prominent, yet have high formation energies in DFT calculations. Regarding ${C_N}$ defects, it is shown that the host Ga and N atoms are involved in the defect's delocalized vibrations and significantly affect the isotopic frequency shift. Much more faint vibrational modes are found from di-atomic carbon-carbon and carbon-hydrogen (C-H) complexes. Also, we note changes of vibrational mode intensities of $C_N$, $C_N=C=C_N$, C-H, and $C_N-C_i$ defects in the IR absorption spectra upon irradiation in the defect-related UV/visible absorption range. Finally, it is demonstrated that the resonant enhancement of the Raman process in the range of defect absorption above 2.5 eV enables the detection of defects at carbon do** concentrations as low as $3.2*10^{17} cm^{-3}$.
△ Less
Submitted 22 September, 2022;
originally announced September 2022.
-
Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)
Authors:
Ivan Gamov,
Carsten Hartmann,
Thomas Straubinger,
Matthias Bickermann
Abstract:
In this work, we study the absorption properties of AlN in the range of 1.5 - 5.5 eV, as well as the meta-stable change in absorption induced by ultraviolet (UV) irradiation (photochromism), and the restoration of the initial state under the action of irradiation of 2 - 4 eV or elevated temperatures. UV irradiation results in a decrease of the absorption coefficient from 110 cm$^{-1}$ to 55 cm…
▽ More
In this work, we study the absorption properties of AlN in the range of 1.5 - 5.5 eV, as well as the meta-stable change in absorption induced by ultraviolet (UV) irradiation (photochromism), and the restoration of the initial state under the action of irradiation of 2 - 4 eV or elevated temperatures. UV irradiation results in a decrease of the absorption coefficient from 110 cm$^{-1}$ to 55 cm$^{-1}$ at 4.7 eV while in the visible range the absorption coefficient increases from values below 5 cm$^{-1}$ to ~35 cm$^{-1}$. Measurements with two linear polarizations, parallel and perpendicular to the optical axis, provide determination of several different absorption bands at 2.6, 2.8, 3.4, 4.0, 4.5, and 4.8 eV. The bands at 2.6 eV and 3.4 eV identify the defect levels near to the valence band, while the band peaking at 2.8 eV is related to the conduction band. The photochromism allows controlling the absorption of light in two related spectral ranges because the decrease of UV absorption and increase of the visible absorption are related to switching the charge state of the same defects.
△ Less
Submitted 17 January, 2021;
originally announced January 2021.
-
Phase diagram studies for the growth of (Mg,Zr):SrGa$_{12}$O$_{19}$ crystals
Authors:
Detlef Klimm,
Bartosz Szczefanowicz,
Nora Wolff,
Matthias Bickermann
Abstract:
By differential thermal analysis a concentration field suitable for the growth of Zr, Mg codoped strontium hexagallate crystals was observed that corresponds well with experimental results from Mateika and Laurien, J. Crystal Growth 52 (1981) 566-572. It was shown that the melting point of doped crystal is ca. 60 K higher than that of undoped crystals. This higher melting points indicates hexagall…
▽ More
By differential thermal analysis a concentration field suitable for the growth of Zr, Mg codoped strontium hexagallate crystals was observed that corresponds well with experimental results from Mateika and Laurien, J. Crystal Growth 52 (1981) 566-572. It was shown that the melting point of doped crystal is ca. 60 K higher than that of undoped crystals. This higher melting points indicates hexagallate phase stabilization by Zr, Mg codo**, and increases the growth window, compared to undoped SrO-Ga$_2$O$_3$ melts.
△ Less
Submitted 30 November, 2020; v1 submitted 28 September, 2020;
originally announced September 2020.
-
Crystal growth and characterization of the pyrochlore Tb$_2$Ti$_2$O$_7$
Authors:
D. Klimm,
C. Guguschev,
D. J. Kok,
M. Naumann,
L. Ackermann,
D. Rytz,
M. Peltz,
K. Dupré,
M. D. Neumann,
A. Kwasniewski,
D. G. Schlom,
M. Bickermann
Abstract:
Terbium titanate (Tb$_2$Ti$_2$O$_7$) is a spin-ice material with remarkable magneto-optical properties. It has a high Verdet constant and is a promising substrate crystal for the epitaxy of quantum materials with the pyrochlore structure. Large single crystals with adequate quality of Tb$_2$Ti$_2$O$_7$ or any pyrochlore are not available so far. Here we report the growth of high-quality bulk cryst…
▽ More
Terbium titanate (Tb$_2$Ti$_2$O$_7$) is a spin-ice material with remarkable magneto-optical properties. It has a high Verdet constant and is a promising substrate crystal for the epitaxy of quantum materials with the pyrochlore structure. Large single crystals with adequate quality of Tb$_2$Ti$_2$O$_7$ or any pyrochlore are not available so far. Here we report the growth of high-quality bulk crystals using the Czochralski method to pull crystals from the melt. Prior work using the automated Czochralski method has suffered from growth instabilities like diameter fluctuation, foot formation and subsequent spiraling shortly after the seeding stage. In this study, the volumes of the crystals were strongly increased to several cubic centimeters by means of manual growth control, leading to crystal diameters up to 40 mm and crystal lengths up to 10 mm. Rocking curve measurements revealed full width at half maximum values between 28 and 40" for 222 reflections. The specific heat capacity c$_p$ was measured between room temperature and 1573 K by dynamic differential scanning calorimetry and shows the typical slow parabolic rise. In contrast, the thermal conductivity κ(T) shows a minimum near 700 K and increases at higher temperature T. Optical spectroscopy was performed at room temperature from the ultraviolet to the near infrared region, and additionally in the near infrared region up to 1623 K. The optical transmission properties and the crystal color are interpreted to be influenced by partial oxidation of Tb$^{3+}$ to Tb$^{4+}$.
△ Less
Submitted 20 June, 2017; v1 submitted 18 May, 2017;
originally announced May 2017.
