Dead layer on silicon p-i-n diode charged-particle detectors
Authors:
B. L. Wall,
J. F. Amsbaugh,
A. Beglarian,
T. Bergmann,
H. C. Bichsel,
L. I. Bodine,
N. M. Boyd,
T. H. Burritt,
Z. Chaoui,
T. J. Corona,
P. J. Doe,
S. Enomoto,
F. Harms,
G. C. Harper,
M. A. Howe,
E. L. Martin,
D. S. Parno,
D. A. Peterson,
L. Petzold,
P. Renschler,
R. G. H. Robertson,
J. Schwarz,
M. Steidl,
T. D. Van Wechel,
B. A. VanDevender
, et al. (3 additional authors not shown)
Abstract:
Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \textit{p-i-…
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Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.
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Submitted 7 October, 2013; v1 submitted 4 October, 2013;
originally announced October 2013.
