Showing 1–1 of 1 results for author: Biasco, S
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Impact ionization in low-band-gap semiconductors driven by ultrafast THz excitation: beyond the ballistic regime
Authors:
Simone Biasco,
Florence Burri,
Sarah Houver,
Elsa Abreu,
Matteo Savoini,
Steven L. Johnson
Abstract:
Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously observed dynamics connected with quasi-ballistic carrier dynamics, we observe other spectral and temporal features that we attribute to impact ionization for peak fi…
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Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously observed dynamics connected with quasi-ballistic carrier dynamics, we observe other spectral and temporal features that we attribute to impact ionization for peak fields above 60 kV/cm, which continue up to the maximum investigated peak field of 430 kV/cm. At the highest fields we estimate a carrier multiplication factor greater than 10 due to impact ionization, which is well-reproduced by a numerical simulation of the impact ionization process which we have developed.
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Submitted 15 August, 2022;
originally announced August 2022.
