Showing 1–5 of 5 results for author: Bhattacharyya, S R

Temperature-Dependent In-Situ LEIS Measurement of W Surface Enrichment by 250 eV D Sputtering of EUROFER

Authors: H. R. Koslowski, S. R. Bhattacharyya, P. Hansen, Ch. Linsmeier, M. Rasiński, P. Ström

Abstract: Tungsten surface enrichment of EUROFER steel by 250 eV deuterium sputtering is in-situ measured using low energy He$^{+}$ ion scattering spectroscopy. The samples are irradiated at various temperatures between 300 K and 800 K with a deuterium atom flux of 2e18 m$^{-2}$s$^{-1}$ and maximum fluence up to 1.1e23 m$^{-2}$. The measurements at room temperature show a clear increase of tungsten surface… ▽ More Tungsten surface enrichment of EUROFER steel by 250 eV deuterium sputtering is in-situ measured using low energy He$^{+}$ ion scattering spectroscopy. The samples are irradiated at various temperatures between 300 K and 800 K with a deuterium atom flux of 2e18 m$^{-2}$s$^{-1}$ and maximum fluence up to 1.1e23 m$^{-2}$. The measurements at room temperature show a clear increase of tungsten surface density, but already at 520 K the observed enrichment is only half as large. At a temperature of 800 K no tungsten surface enrichment is detectable. The obtained data allows to determine an upper limit of 1.6 eV for the diffusion activation energy of tungsten in EUROFER. △ Less

Submitted 3 July, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence

Authors: Debasree Chowdhury, Debabrata Ghose*, Safiul Alam Mollick, Biswarup Satpati, Satya Ranjan Bhattacharyya

Abstract: Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact. Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact. △ Less

Submitted 17 July, 2014; originally announced July 2014.

Formation of isolated islands by size-selected copper nanocluster deposition

Authors: Shyamal Mondal, B. Satpati, S. R. Bhattacharyya

Abstract: Deposition of size-selected metal nanoclusters on a substrate with very low kinetic energy helps to keep the clusters intact with respect to their shape and size as compared to clusters in ight condition. Here we report formation of isolated monodispersed islands of copper of desired size on carbon film by deposition of size selected copper clusters (~ 3 nm) in soft-landing method. Copper clusters… ▽ More Deposition of size-selected metal nanoclusters on a substrate with very low kinetic energy helps to keep the clusters intact with respect to their shape and size as compared to clusters in ight condition. Here we report formation of isolated monodispersed islands of copper of desired size on carbon film by deposition of size selected copper clusters (~ 3 nm) in soft-landing method. Copper clusters were produced by a magnetron based gas aggregation type source equipped with a quardrupole mass filter (QMF) to select size of clusters before landing. Transmission Electron Microscopy (TEM) study shows that diffusion of islands is very low. △ Less

Submitted 1 July, 2013; originally announced July 2013.

Comments: 2 figures

Analysis of atomic depth profiles directly extracted from Rutherford backscattering data for co-sputtered and ion irradiated Au-Ni films

Authors: D. Datta, S. R. Bhattacharyya

Abstract: Co-sputtered Au-Ni thin films having thickness of 30 nm were deposited on Si(100) substrates and irradiated with 160 keV ^{40}Ar^{+} under ambient condition at a number of fluences and analyzed using Rutherford backscattering spectrometry (RBS). The variation of Au signal counts in the RBS spectra with ion dose has been investigated. The distribution of Au, Ni and Si atoms over various depths wi… ▽ More Co-sputtered Au-Ni thin films having thickness of 30 nm were deposited on Si(100) substrates and irradiated with 160 keV ^{40}Ar^{+} under ambient condition at a number of fluences and analyzed using Rutherford backscattering spectrometry (RBS). The variation of Au signal counts in the RBS spectra with ion dose has been investigated. The distribution of Au, Ni and Si atoms over various depths within the as deposited and irradiated samples have been computed using the backscattering data by means of a direct analytical method. Au and Si profiles have been fitted with error function and the relative changes in variance for various ion fluences compared to that of as deposited profiles have been studied. The spreading rates of different constituents across the interface due to Ar ion impact have also been discussed. △ Less

Submitted 10 October, 2007; v1 submitted 28 July, 2007; originally announced July 2007.

Comments: Version 2 : 17 pages (with double spacing) of main text, 4 figures in EPS format, Some text and one figure have been modified

Energy dependent wavelength of the ion induced nanoscale ripple

Authors: T. K. Chini, M. K. Sanyal, S. R. Bhattacharyya

Abstract: Wavelength variation of ion beam induced nanoscale ripple structure has received much attention recently due to its possible application in nanotechnology. We present here results of Ar$^+$ bombarded Si in the energy range 50 to 140 keV to demonstrate that with beam scanning the ripple wavelength increases with ion energy and decreases with energy for irradiation without ion beam scanning. An ex… ▽ More Wavelength variation of ion beam induced nanoscale ripple structure has received much attention recently due to its possible application in nanotechnology. We present here results of Ar$^+$ bombarded Si in the energy range 50 to 140 keV to demonstrate that with beam scanning the ripple wavelength increases with ion energy and decreases with energy for irradiation without ion beam scanning. An expression for the energy dependence of ripple wavelength is proposed taking into simultaneous effect of thermally activated surface diffusion and ion induced effective surface diffusion. △ Less

Submitted 14 June, 2002; originally announced June 2002.

Comments: REVTeX (4 pages), 3 EPS figures