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Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
Authors:
Dāgs Olšteins,
Gunjan Nagda,
Damon J. Carrad,
Daria V. Beznasyuk,
Christian E. N. Petersen,
Sara Martí-Sánchez,
Jordi Arbiol,
Thomas Sand Jespersen
Abstract:
New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within larg…
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New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.
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Submitted 22 May, 2024; v1 submitted 10 January, 2024;
originally announced January 2024.
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Doubling the mobility of InAs/InGaAs selective area grown nanowires
Authors:
Daria V. Beznasyuk,
Sara Martí-Sánchez,
Jung-Hyun Kang,
Rawa Tanta,
Mohana Rajpalke,
Tomaš Stankevič,
Anna Wulff Christensen,
Maria Chiara Spadaro,
Roberto Bergamaschini,
Nikhil N. Maka,
Christian Emanuel N. Petersen,
Damon J. Carrad,
Thomas Sand Jespersen,
Jordi Arbiol,
Peter Krogstrup
Abstract:
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatte…
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Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In$_x$Ga$_{1-x}$As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high quality InAs transport channels with the field-effect electron mobility over~10000~cm$^2$V$^{-1}$s$^{-1}$. This is twice as high as for non-optimized samples and among the highest reported for InAs selective area grown nanostructures.
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Submitted 4 February, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
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Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
Authors:
D. V. Beznasyuk,
P. Stepanov,
J. L. Rouvière,
F. Glas,
M. Verheijen,
J. Claudon,
M. Hocevar
Abstract:
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity. In a nanowire axial heterostructure featuring a sharp interface, strain is set by the materials lattice mismatch and the nanowire radius. Here, we show that int…
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Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity. In a nanowire axial heterostructure featuring a sharp interface, strain is set by the materials lattice mismatch and the nanowire radius. Here, we show that introducing a graded interface in nanowire heterostructures offers an additional parameter to control strain. For a given interface length and lattice mismatch, we first derive theoretically the maximum nanowire radius below which coherent growth is possible. We validate these findings by growing and characterizing various In(Ga)As/GaAs nanowire heterostructures with graded interfaces. Furthermore, we perform a complete chemical and structural characterization of the interface by combining energy-dispersive X-ray spectroscopy and high resolution transmission electron microscopy. In the case of coherent growth, we directly observe that the mismatch strain relaxes elastically on the side walls of the nanowire around the interface area, while the core of the nanowire remains partially strained. Moreover, our experimental data show good agreement with finite element calculations. This analysis confirms in particular that mechanical strain is largely reduced by interface grading. Overall, our work extends the parameter space for the design of nanowire heterostructures, thus opening new opportunities for nanowire optoelectronics.
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Submitted 3 December, 2019;
originally announced December 2019.
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Dislocation-free axial InAs-on-GaAs nanowires on silicon
Authors:
Daria V. Beznasyuk,
Eric Robin,
Martien Den Hertog,
Julien Claudon,
Moïra Hocevar
Abstract:
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-…
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We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-on-GaAs nanowires by further optimizing the growth parameters. We investigated the composition change at the interface by energy dispersive X-ray spectroscopy and the nanowire crystal structure by transmission electron microscopy. The nominal composition of the InAs segment is found to be In$_{x}$Ga$_{1-x}$As with $x$=0.85 and corresponds to 6% of lattice mismatch with GaAs. Strain map** performed by the geometrical phase analysis of high-resolution images revealed a dislocation-free GaAs/InAs interface. In conclusion, we successfully fabricated highly mismatched heterostructures, confirming the prediction that axial GaAs/InAs interfaces are pseudomorphic in nanowires below 40 nm diameter.
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Submitted 4 July, 2017; v1 submitted 19 April, 2017;
originally announced April 2017.
