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Probing Ferroelectric Phase Transitions in Barium Titanate Single Crystals via $\it{in-situ}$ Second Harmonic Generation Microscopy
Authors:
Benjamin Kirbus,
Samuel D. Seddon,
Iuliia Kiseleva,
Elke Beyreuther,
Michael Rüsing,
Lukas M. Eng
Abstract:
Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO$_3$; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay…
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Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO$_3$; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay of such FE domains, the domain walls (DWs), and their macroscopic properties, owed to BTO's multiple and experimentally accessible phase transitions. Here, we employ Second Harmonic Generation Microscopy (SHGM) to $\it{in-situ}$ investigate the cubic-to-tetragonal (at $\sim$126$^\circ$C) and the tetragonal-to-orthorhombic (at $\sim$5$^\circ$C) phase transition in single-crystalline BTO via 3-dimensional (3D) DW map**. We demonstrate that SHGM imaging provides the direct visualization of FE domain switching as well as the domain dynamics in 3D, shedding light on the interplay of the domain structure and the phase transition. These results allow us to extract the different transition temperatures locally, to unveil the hysteresis behavior, and to determine the type of phase transition at play (1st/2nd order) from the recorded SHGM data. The capabilities of SHGM in uncovering these crucial phenomena can easily be applied to other ferroelectrics to provide new possibilities for $\it{in-situ}$ engineering of advanced ferroic devices.
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Submitted 8 June, 2024;
originally announced June 2024.
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Towards the reproducible fabrication of conductive ferroelectric domain walls into lithium niobate bulk single crystals
Authors:
Julius Ratzenberger,
Iuliia Kiseleva,
Boris Koppitz,
Elke Beyreuther,
Manuel Zahn,
Joshua Gössel,
Peter A. Hegarty,
Zeeshan H. Amber,
Michael Rüsing,
Lukas M. Eng
Abstract:
Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale, since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their reproducible manufacturing by gaining preparative control over domain size and domain wall conductivity (DWC). To date, most works on DWC have focused on exploring th…
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Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale, since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their reproducible manufacturing by gaining preparative control over domain size and domain wall conductivity (DWC). To date, most works on DWC have focused on exploring the fundamental electrical properties of individual DWs within single shot experiments, with emphasis on quantifying the origins for DWC. Very few reports exist when it comes to compare the DWC properties between two separate DWs, and literally nothing exists where issues of reproducibility in DWC devices have been addressed. To fill this gap while facing the challenge of finding guidelines achieving predictable DWC performance, we report on a procedure that allows us to reproducibly prepare single hexagonal domains of a predefined diameter into uniaxial ferroelectric (FE) lithium niobate (LN) single crystals of 200 and 300 micrometers thickness, respectively. We show that the domain diameter can be controlled with an error of a few percent. As-grown DWs are then subjected to a standard procedure of current-controlled high-voltage DWC enhancement, repetitively reaching a DWC increase of 6 orders of magnitude. While all resulting DWs show significantly enhanced DWC values, subtle features in their individual current-voltage (I-V) characteristics hint towards different 3D shapes into the bulk, with variations probably reflecting local heterogeneities by defects, DW pinning, and surface-near DW inclination, which seem to have a larger impact than expected.
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Submitted 13 May, 2024;
originally announced May 2024.
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High-temperature domain wall current in Mg-doped lithium niobate single crystals up to 400°C
Authors:
Uliana Yakhnevych,
Marlo Kunzner,
Leonard M. Verhoff,
Julius Ratzenberger,
Elke Beyreuther,
Michael Rüsing,
Simone Sanna,
Lukas M. Eng,
Holger Fritze
Abstract:
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and devices. DWs show very different properties as compared to their bulk counterparts. Of central interest here is the domain wall current (DWC) of charged DWs in 5mol\% Mg-doped lithium niobate single crystals; in contrast to former works, we extend the DWC study here…
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Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and devices. DWs show very different properties as compared to their bulk counterparts. Of central interest here is the domain wall current (DWC) of charged DWs in 5mol\% Mg-doped lithium niobate single crystals; in contrast to former works, we extend the DWC study here to temperatures as high as 400$^\circ$C. Both the temporal stability and the thermal activation energies of 90 - 160 meV are readily deduced from current-voltage sweeps as recorded over multiple heating cycles. Our experimental work is backed up by atomistic modelling of the DWC. The latter suggests that a large band bending renders head-to-head and tail-to-tail DWs semimetallic. These detailed investigations underline the potential to extend DWC-based nanoelectronic applications even into the so-far unexplored high-temperature regime.
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Submitted 15 April, 2024; v1 submitted 1 April, 2024;
originally announced April 2024.
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Comparative study of photo-induced electronic transport along ferroelectric domain walls in lithium niobate single crystals
Authors:
Lili Ding,
Elke Beyreuther,
Boris Koppitz,
Konrad Kempf,
Jianhua Ren,
Wei** Chen,
Michael Rüsing,
Yue Zheng,
Lukas M. Eng
Abstract:
Ferroelectric domain wall conductivity (DWC) is an intriguing functional property, that can be controlled through external stimuli such as electric and mechanical fields. Optical-field control, as a non-invasive flexible handle, has rarely been applied so far, but significantly expands the possibility for both tuning and probing DWC. On the one hand, as known from Second-Harmonic, Raman, and CARS…
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Ferroelectric domain wall conductivity (DWC) is an intriguing functional property, that can be controlled through external stimuli such as electric and mechanical fields. Optical-field control, as a non-invasive flexible handle, has rarely been applied so far, but significantly expands the possibility for both tuning and probing DWC. On the one hand, as known from Second-Harmonic, Raman, and CARS micro-spectroscopy, the optical in-and-out approach delivers parameters on the DW distribution, the DW inclination, and probes the DW vibrational modes; on the other hand, photons might be applied also to directly generate charge carriers within the DW, hence acting as a functional and spectrally tunable probe to deduce the integral or local absorption properties and bandgaps of conductive DWs. Here, we report on such an optoelectronic approach by investigating the photo-induced DWC (PI-DWC) in DWs of the model system lithium niobate, a material that is well known for hosting conductive DWs. We compare three different crystals containing different numbers of domain walls: (A) none, (B) one, and (C) many conductive DWs. All samples are inspected for their current-voltage (I-V) behavior (i) in darkness, and (ii) for different illumination wavelengths swept from 500 nm down to 310 nm. All samples show their maximum PI-DWC at 310 nm, i.e., at the optical bandgap of lithium niobate; moreover, sample (C) reaches PI-DWCs of several $μ$A. Interestingly, a noticeable PI-DWC is also observed for sub-bandgap illumination, i.e., wavelengths as high as 500 nm, hinting towards the existence and decisive role of electronic in-gap states that contribute to the electronic transport along DWs. Finally, conductive atomic force microscopy (c-AFM) investigations under illumination proved that the PI-DWC is confined to the DW area, and does not originate from photo-induced bulk conductivity.
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Submitted 27 February, 2024;
originally announced February 2024.
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Hall mobilities and sheet carrier densities in a single LiNbO$_3$ conductive ferroelectric domain wall
Authors:
Henrik Beccard,
Elke Beyreuther,
Benjamin Kirbus,
Samuel D. Seddon,
Michael Rüsing,
Lukas M. Eng
Abstract:
For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the…
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For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the potential for variably designing room-temperature nanoelectronic circuits and devices based on such CDWs. In this context, the reliable determination of the fundamental transport parameters of LNO CDWs, in particular the 2D charge carrier density $n_{2D}$ and the Hall mobility $μ_{H}$ of the majority carriers, are of highest interest. In this contribution, we present and apply a robust and easy-to-prepare Hall-effect measurement setup by adapting the standard 4-probe van-der-Pauw method to contact a single, hexagonally-shaped domain wall that fully penetrates the 200-$μ$m-thick LNO bulk single crystal. We then determine $n_{2D}$ and $μ_{H}$ for a set of external magnetic fields $B$ and prove the expected cosine-like angular dependence of the Hall voltage. Lastly, we present photo-Hall measurements of one and the same DW, by determining the impact of super-bandgap illumination on the 2D charge carrier density $n_{2D}$.
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Submitted 6 November, 2023; v1 submitted 31 July, 2023;
originally announced August 2023.
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R2D2 -- An equivalent-circuit model that quantitatively describes domain wall conductivity in ferroelectric LiNbO$_3$
Authors:
Manuel Zahn,
Elke Beyreuther,
Iuliia Kiseleva,
Ahmed Samir Lotfy,
Conor J. McCluskey,
Jesi R. Maguire,
Ahmet Suna,
Michael Rüsing,
J. Marty Gregg,
Lukas M. Eng
Abstract:
Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differ…
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Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differentiate between these two contributions. Practically, they allow us here to directly quantify the physical parameters relevant for the two mechanisms (a) and (b) mentioned above. These are, e.g., the resistance of the DW, the saturation current, the ideality factor, and the Schottky barrier height of the electrode/DW junction. Furthermore, the activation energies needed to initiate the thermally-activated electronic transport along the DWs, can be extracted. In addition, we show that electronic transport along LiNbO$_3$ DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode/double-resistor equivalent circuit model, the R2D2 model. Finally, our R2D2 model was checked for its universality by fitting the DWC data not only to z-cut LNO bulk DWs, but equally to z-cut thin-film LNO DWs, and DWC from x-cut DWs as reported in literature.
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Submitted 19 November, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Large Hall electron mobilities in head-to-head BaTiO$_3$-domain walls
Authors:
Henrik Beccard,
Benjamin Kirbus,
Elke Beyreuther,
Michael Rüsing,
Petr Bednyakov,
Jirka Hlinka,
Lukas M. Eng
Abstract:
Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4…
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Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4-point geometry at room temperature, finding the electron mobility to reach around 400~cm$^2$(Vs)$^{-1}$, while the 2-dimensional charge density amounts to ~7$\times$10$^3$cm$^{-2}$. We underline the necessity to take account of thermal and geometrical-misalignment offset voltages by evaluating the Hall resistance under magnetic-field sweeps, since otherwise dramatic errors of several hundred percent in the derived mobility and charge density values can occur. Apart from the specific characterization of the conducting BaTiO$_3$ DW, we propose the method as an easy and fast way to quantitatively characterize ferroic conducting DWs, complementary to previously proposed scanning-probe-based Hall-potential analyses.
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Submitted 24 April, 2022;
originally announced April 2022.
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Does FLASH deplete Oxygen? Experimental Evaluation for Photons, Protons and Carbon Ions
Authors:
Jeannette Jansen,
Jan Knoll,
Elke Beyreuther,
Jörg Pawelke,
Raphael Skuza,
Rachel Hanley,
Stephan Brons,
Francesca Pagliari,
Joao Seco
Abstract:
Purpose: To investigate experimentally, if FLASH irradiation depletes oxygen within water for different radiation types such as photons, protons and carbon ions.
Methods: This study presents measurements of the oxygen consumption in sealed, 3D printed water phantoms during irradiation with X-rays, protons and carbon ions at varying dose rates up to 340 Gy/s. The oxygen measurement was performed…
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Purpose: To investigate experimentally, if FLASH irradiation depletes oxygen within water for different radiation types such as photons, protons and carbon ions.
Methods: This study presents measurements of the oxygen consumption in sealed, 3D printed water phantoms during irradiation with X-rays, protons and carbon ions at varying dose rates up to 340 Gy/s. The oxygen measurement was performed using an optical sensor allowing for non-invasive measurements.
Results: Oxygen consumption in water only depends on dose, dose rate and linear energy transfer (LET) of the irradiation. The total amount of oxygen depleted per 10 Gy was found to be 0.04 - 0.18 % atm for 225 kV photons, 0.04 - 0.25 % atm for 224 MeV protons and 0.09 - 0.17 % atm for carbon ions. consumption depends on dose rate by an inverse power law and saturates for higher dose rates because of self-interactions of radicals. Higher dose rates yield lower oxygen consumption. No total depletion of oxygen was found for clinical doses.
Conclusions: FLASH irradiation does consume oxygen, but not enough to deplete all the oxygen present. For higher dose rates, less oxygen was consumed than at standard radiotherapy dose rates. No total depletion was found for any of the analyzed radiation types for 10 Gy dose delivery using FLASH.
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Submitted 1 March, 2021; v1 submitted 25 February, 2021;
originally announced February 2021.
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Optical-Field Driven Charge-Transfer Modulations near Composite Nanostructures
Authors:
Kwang ** Lee,
Elke Beyreuther,
Sohail A. Jalil,
Sang Jun Kim,
Lukas Eng,
Chunlei Guo,
Pascal Andre
Abstract:
Optical activation of material properties illustrates the potentials held by tuning light-matter interactions with impacts ranging from basic science to technological applications. Here, we demonstrate for the first time that composite nanostructures providing nonlocal environments can be engineered to optically trigger photoinduced charge transfer dynamic (CTD) modulations in the solid state. The…
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Optical activation of material properties illustrates the potentials held by tuning light-matter interactions with impacts ranging from basic science to technological applications. Here, we demonstrate for the first time that composite nanostructures providing nonlocal environments can be engineered to optically trigger photoinduced charge transfer dynamic (CTD) modulations in the solid state. The nanostructures herein explored lead to unprecedented out-of-phase behaviour between charge separation and recombination dynamics, along with linear CTD variations with the optical-field amplitude. Using transient absorption spectroscopy, up to 270 % increase in charge separation rate is obtained in organic semiconductor thin films. We provide evidences that composite nanostructures allow for surface photovoltages to be created, which kinetics vary with the composite architecture and last beyond optical pulse temporal characteristics. Furthermore, by generalizing Marcus theory framework, we explain why CTD modulations can only be unveiled when optic field effects are enhanced by nonlocal image dipole interactions. Demonstrating that composite nanostructures can be designed to use optical fields as CTD remote actuators opens the path for their use in practical and original applications ranging from photochemistry to optoelectronics.
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Submitted 16 November, 2020; v1 submitted 23 March, 2020;
originally announced March 2020.
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Spectral and spatial sha** of laser-driven proton beams using a pulsed high-field magnet beamline
Authors:
Florian-Emanuel Brack,
Florian Kroll,
Lennart Gaus,
Constantin Bernert,
Elke Beyreuther,
Thomas E. Cowan,
Leonhard Karsch,
Stephan Kraft,
Leoni A. Kunz-Schughart,
Elisabeth Lessmann,
Josefine Metzkes-Ng,
Lieselotte Obst-Hübl,
Jörg Pawelke,
Martin Rehwald,
Hans-Peter Schlenvoigt,
Ulrich Schramm,
Manfred Sobiella,
Emília Rita Szabó,
Tim Ziegler,
Karl Zeil
Abstract:
Intense laser-driven proton pulses, inherently broadband and highly divergent, pose a challenge to established beamline concepts on the path to application-adapted irradiation field formation, particularly for 3D. Here we experimentally show the successful implementation of a highly efficient (50% transmission) and tuneable dual pulsed solenoid setup to generate a homogeneous (8.5% uniformity late…
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Intense laser-driven proton pulses, inherently broadband and highly divergent, pose a challenge to established beamline concepts on the path to application-adapted irradiation field formation, particularly for 3D. Here we experimentally show the successful implementation of a highly efficient (50% transmission) and tuneable dual pulsed solenoid setup to generate a homogeneous (8.5% uniformity laterally and in depth) volumetric dose distribution (cylindrical volume of 5 mm diameter and depth) at a single pulse dose of 0.7 Gy via multi-energy slice selection from the broad input spectrum. The experiments have been conducted at the Petawatt beam of the Dresden Laser Acceleration Source Draco and were aided by a predictive simulation model verified by proton transport studies. With the characterised beamline we investigated manipulation and matching of lateral and depth dose profiles to various desired applications and targets. Using a specifically adapted dose profile, we successfully performed first proof-of-concept laser-driven proton irradiation studies of volumetric in-vivo normal tissue (zebrafish embryos) and in-vitro tumour tissue (SAS spheroids) samples.
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Submitted 6 April, 2020; v1 submitted 18 October, 2019;
originally announced October 2019.
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Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation
Authors:
Andreas Thiessen,
Elke Beyreuther,
Robert Werner,
Reinhold Kleiner,
Dieter Koelle,
Lukas M. Eng
Abstract:
La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$-phase segregation and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, were comparatively investigated with respect to both their spectral and temperature-dependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optic…
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La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$-phase segregation and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, were comparatively investigated with respect to both their spectral and temperature-dependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optical excitation, oxygen reduction appeared to be an effective way to decrease the film resistance, but the film thickness was found to play a minor role. However, from the evaluation of the spectral behaviour of the PC and the comparison of the MR of the LCeMO/substrate-samples with a bare substrate under illumination we find that the photoconductivity data reflects not only contributions from (i) photogenerated charge carriers in the film and (ii) carriers injected from the photoconductive substrate (as concluded from earlier works), but also (iii) a decisive parallel photoconduction in the SrTiO$_3$ substrate. Furthermore -- also by analyzing the MR characteristics -- the unexpected occurence of a strong electroresistive effect in the sample with the highest degree of CeO$_2$ segregation and oxygen deficiency could be attributed to the electroresistance of the SrTiO$_3$ substrate as well. The results suggest a critical reconsideration and possibly a reinterpretation of several previous photoconductivity and electroresistance investigations of manganite thin films on SrTiO$_3$.
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Submitted 21 August, 2014;
originally announced August 2014.
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Electrical-transport characteristics of as-grown and oxygen-reduced La$_{0.7}$Ce$_{0.3}$MnO$_3$ films: calculation of hop** energies, Mn valences, and carrier localization lengths
Authors:
Andreas Thiessen,
Elke Beyreuther,
Robert Werner,
Reinhold Kleiner,
Dieter Koelle,
Lukas M. Eng
Abstract:
Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$ phase segregation, and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, are compared with respect to their resistance-vs.-temperature (…
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Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$ phase segregation, and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, are compared with respect to their resistance-vs.-temperature (R vs. T) behavior from 300~K down to 90~K. While the variation of the film thickness (and thus the degree of epitaxial strain) in the range between 10~nm and 100~nm has only a weak impact on the electrical transport, the degree of oxygen deficiency as well as the existence of CeO$_2$ clusters can completely change the type of hop** mechanism. This is shown by fitting the respective \textit{R-T} curves with three different transport models (adiabatic polaron hop**, Mott variable-range hop**, Efros-Shklovskii variable-range hop**), which are commonly used for the mixed-valence manganites. Several characteristic transport parameters, such as the hop** energies, the carrier localization lengths, as well as the Mn valences are derived from the fitting procedures.
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Submitted 23 August, 2014; v1 submitted 20 August, 2014;
originally announced August 2014.
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Conducting and insulating LaAlO$_3$/SrTiO$_3$ interfaces: A comparative surface photovoltage investigation
Authors:
Elke Beyreuther,
Domenico Paparo,
Andreas Thiessen,
Stefan Grafström,
Lukas M. Eng
Abstract:
Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO$_3$ films grown either on TiO$_2$- or on SrO-terminated SrTiO$_3$. As shown in a number of experim…
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Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO$_3$ films grown either on TiO$_2$- or on SrO-terminated SrTiO$_3$. As shown in a number of experimental and theoretical investigations in the past, these two interfaces exhibit dramatically different properties with the first being conducting and the second insulating.
Our present SPV investigation reveals clearly distinguishable interface defect state distributions for both configurations when interpreted within the framework of a classical semiconductor band scheme. Furthermore, bare SrTiO$_3$ crystals with TiO$_2$ or mixed SrO/TiO$_2$ terminations show similar SPV spectra and transients as do LaAlO$_3$-covered samples with the respective termination of the SrTiO$_3$ substrate. This is in accordance with a number of recent works that stress the decisive role of SrTiO$_3$ and the minor role of LaAlO$_3$ with respect to the electronic interface properties.
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Submitted 3 November, 2013;
originally announced November 2013.
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Mn$^{2+}$/Mn$^{3+}$ state of La$_{0.7}$Ce$_{0.3}$MnO$_3$ by oxygen reduction and photodo**
Authors:
Andreas Thiessen,
Elke Beyreuther,
Stefan Grafström,
Kathrin Dörr,
Robert Werner,
Reinhold Kleiner,
Dieter Koelle,
Lukas M. Eng
Abstract:
Films of cerium-doped LaMnO$_3$, which has been intensively discussed as an electron-doped counterpart to hole-doped mixed-valence lanthanum manganites during the past decade, were analyzed by x-ray photoemission spectroscopy with respect to their manganese valence under photoexcitation. The comparative analysis of the Mn 3s exchange splitting of La$_{0.7}$Ce$_{0.3}$MnO$_3$ (LCeMO) films in the da…
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Films of cerium-doped LaMnO$_3$, which has been intensively discussed as an electron-doped counterpart to hole-doped mixed-valence lanthanum manganites during the past decade, were analyzed by x-ray photoemission spectroscopy with respect to their manganese valence under photoexcitation. The comparative analysis of the Mn 3s exchange splitting of La$_{0.7}$Ce$_{0.3}$MnO$_3$ (LCeMO) films in the dark and under illumination clearly shows that both oxygen reduction and illumination are able to decrease the Mn valence towards a mixed 2$+$/3$+$ state, independently of the film thickness and the degree of CeO$_2$ segregation. Charge injection from the photoconductive SrTiO$_3$ substrate into the Mn e$_g$ band with carrier lifetimes in the range of tens of seconds and intrinsic generation of electron-hole pairs within the films are discussed as two possible sources of the Mn valence shift and the subsequent electron do**.
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Submitted 6 December, 2013; v1 submitted 18 October, 2013;
originally announced October 2013.
