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Classifying groups with a small number of subgroups
Authors:
David A. Nash,
Alexander Betz
Abstract:
We provide lower bounds on the number of subgroups of a group $G$ as a function of the primes and exponents appearing in the prime factorization of $|G|$. Using these bounds, we classify all abelian groups with 22 or fewer subgroups, and all non-abelian groups with 19 or fewer subgroups. This allows us to extend the integer sequence A274847 \cite{OEIS} introduced by Slattery in \cite{Slattery}.
We provide lower bounds on the number of subgroups of a group $G$ as a function of the primes and exponents appearing in the prime factorization of $|G|$. Using these bounds, we classify all abelian groups with 22 or fewer subgroups, and all non-abelian groups with 19 or fewer subgroups. This allows us to extend the integer sequence A274847 \cite{OEIS} introduced by Slattery in \cite{Slattery}.
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Submitted 8 July, 2020; v1 submitted 19 June, 2020;
originally announced June 2020.
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On the odd order composition factors of finite linear groups
Authors:
Alexander Betz,
Max Chao-Haft,
Ting Gong,
Anthony Ter-Saakov,
Yong Yang
Abstract:
In this paper, we study the product of orders of composition factors of odd order in a composition series of a finite linear group. First we generalize a result by Manz and Wolf about the order of solvable linear groups of odd order. Then we use this result to find bounds for the product of orders of composition factors of odd order in a composition series of a finite linear group.
In this paper, we study the product of orders of composition factors of odd order in a composition series of a finite linear group. First we generalize a result by Manz and Wolf about the order of solvable linear groups of odd order. Then we use this result to find bounds for the product of orders of composition factors of odd order in a composition series of a finite linear group.
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Submitted 6 June, 2020; v1 submitted 1 December, 2019;
originally announced December 2019.
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Finite Permutation Groups with Few Orbits Under the Action on the Power Set
Authors:
Alexander Betz,
Max Chao-Haft,
Ting Gong,
Thomas Michael Keller,
Anthony Ter-Saakov,
Yong Yang
Abstract:
We study the orbits under the natural action of a permutation group $G \subseteq S_n$ on the powerset $\mathscr{P}(\{1, \dots , n\})$. The permutation groups having exactly $n+1$ orbits on the powerset can be characterized as set-transitive groups and were fully classified in \cite{BP55}. In this paper, we establish a general method that allows one to classify the permutation groups with $n+r$ set…
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We study the orbits under the natural action of a permutation group $G \subseteq S_n$ on the powerset $\mathscr{P}(\{1, \dots , n\})$. The permutation groups having exactly $n+1$ orbits on the powerset can be characterized as set-transitive groups and were fully classified in \cite{BP55}. In this paper, we establish a general method that allows one to classify the permutation groups with $n+r$ set-orbits for a given $r$, and apply it to integers $2 \leq r \leq 15$ using the computer algebra system GAP.
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Submitted 2 August, 2021; v1 submitted 1 August, 2019;
originally announced August 2019.
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Quantum and Tunnelling Capacitance in Charge and Spin Qubits
Authors:
R. Mizuta,
R. M. Otxoa,
A. C. Betz,
M. F. Gonzalez-Zalba
Abstract:
We present a theoretical analysis of the capacitance of a double quantum dot in the charge and spin qubit configurations probed at high-frequencies. We find that in general the total capacitance of the system consists of two state-dependent terms: The quantum capacitance arising from adiabatic charge motion and the tunnelling capacitance that appears when repopulation occurs at a rate comparable o…
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We present a theoretical analysis of the capacitance of a double quantum dot in the charge and spin qubit configurations probed at high-frequencies. We find that in general the total capacitance of the system consists of two state-dependent terms: The quantum capacitance arising from adiabatic charge motion and the tunnelling capacitance that appears when repopulation occurs at a rate comparable or faster than the probing frequency. The analysis of the capacitance lineshape as a function of externally controllable variables offers a way to characterize the qubits' charge and spin state as well as relevant system parameters such as charge and spin relaxation times, tunnel coupling, electron temperature and electron g-factor. Overall, our analysis provides a formalism to understand dispersive qubit-resonator interactions which can be applied to high-sensitivity and non-invasive quantum-state readout.
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Submitted 16 August, 2016; v1 submitted 11 April, 2016;
originally announced April 2016.
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Reconfigurable quadruple quantum dots in a silicon nanowire transistor
Authors:
A. C. Betz,
M. L. V. Tagliaferri,
M. Vinet,
M. Broström,
M. Sanquer,
A. J. Ferguson,
M. F. Gonzalez-Zalba
Abstract:
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitanc…
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We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.
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Submitted 11 March, 2016;
originally announced March 2016.
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Gate-sensing coherent charge oscillations in a silicon field-effect transistor
Authors:
M. Fernando Gonzalez-Zalba,
Sergey N. Shevchenko,
Sylvain Barraud,
J. Robert Johansson,
Andrew J. Ferguson,
Franco Nori,
Andreas C. Betz
Abstract:
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge o…
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Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.
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Submitted 18 February, 2016;
originally announced February 2016.
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Dimensionality effects on the luminescence properties of hBN
Authors:
éonard Schué,
Bruno Berini,
Bernard Plaçais,
François Ducastelle,
Julien Barjon,
Annick Loiseau,
Andreas Betz
Abstract:
Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6--6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers hav…
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Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6--6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers have been recorded. Strong modifications in the same UV range are observed and discussed within the general framework of 2D exciton properties in lamellar crystals.
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Submitted 8 January, 2016;
originally announced January 2016.
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Anisotropic magneto-capacitance in ferromagnetic-plate capacitors
Authors:
J. A. Haigh,
C. Ciccarelli,
A. C. Betz,
A. Irvine,
V. Novák,
T. Jungwirth,
J. Wunderlich
Abstract:
The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magne…
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The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.
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Submitted 1 May, 2015;
originally announced May 2015.
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Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
Authors:
A. C. Betz,
R. Wacquez,
M. Vinet,
X. Jehl,
A L. Saraiva,
M. Sanquer,
A. J. Ferguson,
M. F. Gonzalez-Zalba
Abstract:
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via…
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We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via in-situ gate-based radio frequency reflectometry, where one top-gate electrode is connected to a resonator. The latter removes the need for external charge sensors in quantum computing architectures and provides a compact way to readout the dispersive shift caused by changes in the quantum capacitance during interdot charge transitions. Here, we observe Pauli spin-blockade in the high-frequency response of the circuit at finite magnetic fields between singlet and triplet states. The blockade is lifted at higher magnetic fields when intra-dot triplet states become the ground state configuration. A lineshape analysis of the dispersive phase shift reveals furthermore an intradot valley-orbit splitting $Δ_{vo}$ of 145 $μ$eV. Our results open up the possibility to operate compact CMOS technology as a singlet-triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics.
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Submitted 1 May, 2015; v1 submitted 12 April, 2015;
originally announced April 2015.
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Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
Authors:
M. Urdampilleta,
A. Chatterjee,
C. C. Lo,
T. Kobayashi,
J. Mansir,
S. Barraud,
A. C. Betz,
S. Rogge,
M. F. Gonzalez-Zalba,
J. J. L. Morton
Abstract:
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfin…
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Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.
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Submitted 19 March, 2015; v1 submitted 3 March, 2015;
originally announced March 2015.
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Supersymmetry with non-geometric fluxes, or a $β$-twist in Generalized Geometry and Dirac operator
Authors:
David Andriot,
Andre Betz
Abstract:
We study ten-dimensional supersymmetric vacua with NSNS non-geometric fluxes, in the framework of $β$-supergravity. We first provide expressions for the fermionic supersymmetry variations. Specifying a compactification ansatz to four dimensions, we deduce internal Killing spinor equations. These supersymmetry conditions are then reformulated in terms of pure spinors, similarly to standard supergra…
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We study ten-dimensional supersymmetric vacua with NSNS non-geometric fluxes, in the framework of $β$-supergravity. We first provide expressions for the fermionic supersymmetry variations. Specifying a compactification ansatz to four dimensions, we deduce internal Killing spinor equations. These supersymmetry conditions are then reformulated in terms of pure spinors, similarly to standard supergravity vacua admitting an SU(3)xSU(3) structure in Generalized Complex Geometry. The standard d-H acting on the pure spinors is traded for a generalized Dirac operator D, depending here on the non-geometric fluxes. Rewriting it with an exponential of the bivector $β$ leads us to discuss the geometrical characterisation of the vacua in terms of a $β$-twist, in analogy to the standard twist by the b-field. Thanks to D, we also propose a general expression for the superpotential to be obtained from standard supergravities or $β$-supergravity, and verify its agreement with formulas of the literature. We finally comment on the Ramond-Ramond sector, and discuss a possible relation to intermediate or dynamical SU(2) structure solutions.
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Submitted 31 March, 2015; v1 submitted 24 November, 2014;
originally announced November 2014.
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Ambipolar quantum dots in intrinsic silicon
Authors:
A. C. Betz,
M. F. Gonzalez-Zalba,
G. Podd,
A. J. Ferguson
Abstract:
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater l…
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We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction leading to higher charge noise in the p-regime.
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Submitted 13 October, 2014;
originally announced October 2014.
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Surface Engineering for Phase Change Heat Transfer: A Review
Authors:
Daniel Attinger,
Christophe Frankiewicz,
Amy R. Betz,
Thomas M. Schutzius,
Ranjan Ganguly,
Arindam Das,
C. -J. Kim,
Constantine M. Megaridis
Abstract:
Among numerous challenges to meet the rising global energy demand in a sustainable manner, improving phase change heat transfer has been at the forefront of engineering research for decades. The high heat transfer rates associated with phase change heat transfer are essential to energy and industry applications; but phase change is also inherently associated with poor thermodynamic efficiencies at…
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Among numerous challenges to meet the rising global energy demand in a sustainable manner, improving phase change heat transfer has been at the forefront of engineering research for decades. The high heat transfer rates associated with phase change heat transfer are essential to energy and industry applications; but phase change is also inherently associated with poor thermodynamic efficiencies at low heat flux, and violent instabilities at high heat flux. Engineers have tried since the 1930's to fabricate solid surfaces that improve phase change heat transfer. The development of micro and nanotechnologies has made feasible the high-resolution control of surface texture and chemistry over length scales ranging from molecular levels to centimeters. This paper reviews the fabrication techniques available for metallic and silicon-based surfaces, considering sintered and polymeric coatings. The influence of such surfaces in multiphase processes of high practical interest, e.g., boiling, condensation, freezing, and the associated physical phenomena are reviewed. The case is made that while engineers are in principle able to manufacture surfaces with optimum nucleation or thermofluid transport characteristics, more theoretical and experimental efforts are needed to guide the design and cost-effective fabrication of surfaces that not only satisfy the existing technological needs, but also catalyze new discoveries.
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Submitted 18 September, 2014;
originally announced September 2014.
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A high-sensitivity gate-based charge sensor in silicon
Authors:
M. F. Gonzalez-Zalba,
A. J. Ferguson,
S. Barraud,
A. C. Betz
Abstract:
The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit arch…
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The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $μ$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $μ$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.
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Submitted 12 May, 2014;
originally announced May 2014.
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NS-branes, source corrected Bianchi identities, and more on backgrounds with non-geometric fluxes
Authors:
David Andriot,
Andre Betz
Abstract:
In the first half of the paper, we study in details NS-branes, including the NS5-brane, the Kaluza-Klein monopole and the exotic $5_2^2$- or Q-brane, together with Bianchi identities for NSNS (non)-geometric fluxes. Four-dimensional Bianchi identities are generalized to ten dimensions with non-constant fluxes, and get corrected by a source term in presence of an NS-brane. The latter allows them to…
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In the first half of the paper, we study in details NS-branes, including the NS5-brane, the Kaluza-Klein monopole and the exotic $5_2^2$- or Q-brane, together with Bianchi identities for NSNS (non)-geometric fluxes. Four-dimensional Bianchi identities are generalized to ten dimensions with non-constant fluxes, and get corrected by a source term in presence of an NS-brane. The latter allows them to reduce to the expected Poisson equation. Without sources, our Bianchi identities are also recovered by squaring a nilpotent $Spin(D,D) \times \mathbb{R}^+$ Dirac operator. Generalized Geometry allows us in addition to express the equations of motion explicitly in terms of fluxes. In the second half, we perform a general analysis of ten-dimensional geometric backgrounds with non-geometric fluxes, in the context of $β$-supergravity. We determine a well-defined class of such vacua, that are non-geometric in standard supergravity: they involve $β$-transforms, a manifest symmetry of $β$-supergravity with isometries. We show as well that these vacua belong to a geometric T-duality orbit.
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Submitted 21 July, 2014; v1 submitted 24 February, 2014;
originally announced February 2014.
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A Note on the CFT Origin of the Strong Constraint of DFT
Authors:
Andre Betz,
Ralph Blumenhagen,
Dieter Lust,
Felix Rennecke
Abstract:
In double field theory, motivated by its field theoretic consistency, the level matching condition is generalized to the so-called strong constraint. In this note, it is investigated what the two-dimensional conformal field theory origin of this constraint is. Initially treating the left- and right-movers as independent, we compute the torus partition function as well as a generalized Virasoro-Sha…
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In double field theory, motivated by its field theoretic consistency, the level matching condition is generalized to the so-called strong constraint. In this note, it is investigated what the two-dimensional conformal field theory origin of this constraint is. Initially treating the left- and right-movers as independent, we compute the torus partition function as well as a generalized Virasoro-Shapiro amplitude. In non-compact directions the strong constraint arises from the factorization of the Virasoro-Shapiro amplitude over physical states as determined by the modular invariant partition function. From the same argument, along internal toroidal directions, no analogous constraint arises.
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Submitted 10 March, 2014; v1 submitted 7 February, 2014;
originally announced February 2014.
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Thermionic charge transport in CMOS nano-transistors
Authors:
A. C. Betz,
S. Barraud,
Q. Wilmart,
B. Plaçais,
X. Jehl,
M. Sanquer,
M. F. Gonzalez - Zalba
Abstract:
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically ove…
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We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.
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Submitted 10 December, 2013;
originally announced December 2013.
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β-supergravity: a ten-dimensional theory with non-geometric fluxes, and its geometric framework
Authors:
David Andriot,
Andre Betz
Abstract:
We present a ten-dimensional theory, named β-supergravity, that contains non-geometric fluxes and could uplift some four-dimensional gauged supergravities. Building on earlier work, we study here its NSNS sector, where Q- and R-fluxes are precisely identified. Interestingly, the Q-flux is captured in an analogue of the Levi-Civita spin connection, giving rise to a second curvature scalar. We repro…
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We present a ten-dimensional theory, named β-supergravity, that contains non-geometric fluxes and could uplift some four-dimensional gauged supergravities. Building on earlier work, we study here its NSNS sector, where Q- and R-fluxes are precisely identified. Interestingly, the Q-flux is captured in an analogue of the Levi-Civita spin connection, giving rise to a second curvature scalar. We reproduce the ten-dimensional Lagrangian using the Generalized Geometry formalism; this provides us with enlightening interpretations of the new structures. Then, we derive the equations of motion of our theory, and finally discuss further aspects: the dimensional reduction to four dimensions and comparison to gauged supergravities, the obtention of ten-dimensional purely NSNS solutions, the extensions to other sectors and new objects, the supergravity limit, and eventually the symmetries, in particular the βgauge transformation. We also introduce the related notion of a generalized cotangent bundle.
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Submitted 10 January, 2014; v1 submitted 18 June, 2013;
originally announced June 2013.
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Excitonic recombinations in hBN: from bulk to exfoliated layers
Authors:
Aurélie Pierret,
Jorge Loayza,
Bruno Berini,
Andreas Betz,
Bernard Plaçais,
François Ducastelle,
Julien Barjon,
Annick Loiseau
Abstract:
Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared…
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Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared to those of nanosheets mechanically exfoliated from them. First the link between the presence of structural defects and the recombination intensity of bound-excitons, the so-called D series, is confirmed. Low defective h-BN regions are further evidenced by CL spectral map** (hyperspectral imaging), allowing us to observe new features in the near-band-edge region, tentatively attributed to phonon replica of exciton recombinations. Second the h-BN thickness was reduced down to six atomic layers, using mechanical exfoliation, as evidenced by atomic force microscopy. Even at these low thicknesses, the luminescence remains intense and exciton recombination energies are not strongly modified with respect to the bulk, as expected from theoretical calculations indicating extremely compact excitons in h-BN.
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Submitted 6 February, 2014; v1 submitted 12 June, 2013;
originally announced June 2013.
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Boiling Heat Transfer on Superhydrophilic, Superhydrophobic, and Superbiphilic Surfaces
Authors:
Amy Rachel Betz,
James Jenkins,
Chang-** 'CJ' Kim,
Daniel Attinger
Abstract:
With recent advances in micro- and nanofabrication, superhydrophilic and superhydrophobic surfaces have been developed. The statics and dynamics of fluids on these surfaces have been well characterized. However, few investigations have been made into the potential of these surfaces to control and enhance other transport phenomena. In this article, we characterize pool boiling on surfaces with wett…
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With recent advances in micro- and nanofabrication, superhydrophilic and superhydrophobic surfaces have been developed. The statics and dynamics of fluids on these surfaces have been well characterized. However, few investigations have been made into the potential of these surfaces to control and enhance other transport phenomena. In this article, we characterize pool boiling on surfaces with wettabilities varied from superhydrophobic to superhydrophilic, and provide nucleation measurements. The most interesting result of our measurements is that the largest heat transfer coefficients are reached not on surfaces with spatially uniform wettability, but on biphilic surfaces, which juxtapose hydrophilic and hydrophobic regions. We develop an analytical model that describes how biphilic surfaces effectively manage the vapor and liquid transport, delaying critical heat flux and maximizing the heat transfer coefficient. Finally, we manufacture and test the first superbiphilic surfaces (juxtaposing superhydrophobic and superhydrophilic regions), which show exceptional performance in pool boiling, combining high critical heat fluxes over 100 W/cm2 with very high heat transfer coefficients, over 100 kW/m2K.
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Submitted 7 November, 2012;
originally announced November 2012.
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Supercollision cooling in undoped graphene
Authors:
A. C. Betz,
S. H. Jhang,
E. Pallecchi,
R. Feirrera,
G. Fève,
J. -M. Berroir,
B. Plaçais
Abstract:
Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed ou…
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Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed out in Ref. \onlinecite{Song2012PRL}, this is the case in undoped graphene where the small Fermi surface drastically restricts the allowed phonon energy in ordinary collisions. Using electrical heating and sensitive noise thermometry we report on SC-cooling in diffusive monolayer graphene. At low carrier density and high phonon temperature the Joule power $P$ obeys a $P\propto T_e^3$ law as a function of electronic temperature $T_e$. It overrules the linear law expected for ordinary collisions which has recently been observed in resistivity measurements. The cubic law is characteristic of SCs and departs from the $T_e^4$ dependence recently reported for metallic graphene below the Bloch-Grüneisen temperature. These supercollisions are important for applications of graphene in bolometry and photo-detection.
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Submitted 25 October, 2012;
originally announced October 2012.
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Hot electron cooling by acoustic phonons in graphene
Authors:
A. C. Betz,
F. Vialla,
D. Brunel,
C. Voisin,
M. Picher,
A. Cavanna,
A. Madouri,
G. Fève,
J. -M. Berroir,
B. Plaçais,
E. Pallecchi
Abstract:
We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. Thi…
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We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant $Σ$ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of $Σ$, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors.
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Submitted 11 August, 2012; v1 submitted 13 March, 2012;
originally announced March 2012.
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Graphene microwave transistors on sapphire substrates
Authors:
E. Pallecchi,
C. Benz,
A. C. Betz,
H. v. Löhneysen,
B. Plaçais,
R. Danneau
Abstract:
We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high p…
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We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier.
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Submitted 27 June, 2011;
originally announced June 2011.
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Do surfaces with mixed hydrophilic and hydrophobic areas enhance pool boiling?
Authors:
Amy Betz,
Jie Xu,
Huihe Qiu,
Daniel Attinger
Abstract:
We demonstrate that smooth and flat surfaces combining hydrophilic and hydrophobic patterns improve pool boiling performance. Compared to a hydrophilic surface with 7 degree wetting angle, the measured critical heat flux and heat transfer coefficients of the enhanced surfaces are up to respectively 65 and 100% higher. Different networks combining hydrophilic and hydrophobic regions are characteriz…
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We demonstrate that smooth and flat surfaces combining hydrophilic and hydrophobic patterns improve pool boiling performance. Compared to a hydrophilic surface with 7 degree wetting angle, the measured critical heat flux and heat transfer coefficients of the enhanced surfaces are up to respectively 65 and 100% higher. Different networks combining hydrophilic and hydrophobic regions are characterized. While all tested networks enhance the heat transfer coefficient, large enhancements of critical heat flux are typically found for hydrophilic networks featuring hydrophobic islands. Hydrophilic networks indeed are shown to prevent the formation of an insulating vapor layer.
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Submitted 18 August, 2010; v1 submitted 12 August, 2010;
originally announced August 2010.
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Transport scattering time probed through rf admittance of a graphene capacitor
Authors:
E. Pallecchi,
A. C. Betz,
J. Chaste,
G. Fève,
B. Huard,
T. Kontos,
J. -M. Berroir,
B. Plaçais
Abstract:
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion constant are deduced from the low frequency gate capacitance, its charging time and their ratio. The admittance evolves from an RC-like to a skin-effect response…
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We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion constant are deduced from the low frequency gate capacitance, its charging time and their ratio. The admittance evolves from an RC-like to a skin-effect response at GHz frequency with a crossover given by the Thouless energy. The scattering time is found to be independent of energy in the 0 - 200 meV investigated range at room temperature. This is consistent with a random mass model for Dirac Fermions.
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Submitted 23 March, 2011; v1 submitted 19 May, 2010;
originally announced May 2010.
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CO, CI and CII observations of NGC 7023
Authors:
M. Gerin,
T. G. Phillips,
J. Keene,
A. L. Betz,
R. T. Boreiko
Abstract:
We present new data on the photodissociation regions associated with the reflection nebula NGC7023. 13CO(3-2) emission, delineates a molecular cloud containing a cavity largely devoid of molecular gas around this star. Neutral carbon is closely associated with the 13CO emission while ionized carbon is found inside and at the edges of the cavity. The ionized carbon appears to be, at least in part…
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We present new data on the photodissociation regions associated with the reflection nebula NGC7023. 13CO(3-2) emission, delineates a molecular cloud containing a cavity largely devoid of molecular gas around this star. Neutral carbon is closely associated with the 13CO emission while ionized carbon is found inside and at the edges of the cavity. The ionized carbon appears to be, at least in part, associated with HI. We have mapped the northern and southern rims in 12CO(6-5) emission and found a good association with the H2 rovibrational emission, though the warm CO gas permeates a larger fraction of the molecular cloud than the vibrationally excited H2. The results are compared with PDR models. We suggest that a second PDR has been created at the surface of the molecular cloud by the scattered radiation from HD 200775. This second PDR produces a layer of atomic carbon at the surface of the sheet, which increases the predicted [C]/[CO] abundance ratio to 10%, close to the observed value.
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Submitted 13 February, 1998; v1 submitted 10 February, 1998;
originally announced February 1998.
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The 12C/13C Isotopic Ratio in Photodissociated Gas in M42
Authors:
R. T. Boreiko,
A. L. Betz
Abstract:
We have observed the 158 micron 2P3/2-2P1/2 fine-structure line of 12C II simultaneously with the F=2-1 and F=1-0 hyperfine components of this transition in 13C II in the Orion photodissociation region near theta1C . The line profiles were fully resolved using a heterodyne spectrometer with 0.5 km/s resolution. The relative intensities of these lines give a 12C/13C isotopic ratio of R=58 (+6,-5)…
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We have observed the 158 micron 2P3/2-2P1/2 fine-structure line of 12C II simultaneously with the F=2-1 and F=1-0 hyperfine components of this transition in 13C II in the Orion photodissociation region near theta1C . The line profiles were fully resolved using a heterodyne spectrometer with 0.5 km/s resolution. The relative intensities of these lines give a 12C/13C isotopic ratio of R=58 (+6,-5) for the most probable 12C II peak optical depth tau=1.3 . The constrained range of tau(12C II) between 1.0 and 1.4 corresponds to a range of 12C/13C between 52 and 61. The most probable value of 58 agrees very well with that obtained from a relationship between the isotopic ratio and galactocentric distance derived from CO measurements, but is lower than the specific value of 67(+-3) obtained for Orion from CO data. An isotopic ratio as low as 43, as previously suggested based on optical absorption measurements of the local interstellar medium, is excluded by the C II data at about the 2 sigma level.
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Submitted 21 June, 1996;
originally announced June 1996.
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Heterodyne Spectroscopy of the 63 $μ$m O I Line in M42
Authors:
R. T. Boreiko,
A. L. Betz
Abstract:
We have used a laser heterodyne spectrometer to resolve the emission line profile of the 63 micron 3P1 - 3P2 fine-structure transition of O I at two locations in M42. Comparison of the peak antenna temperature with that of the 158 micron C II fine-structure line shows that the gas kinetic temperature in the photodissociation region near theta1C is 175 - 220 K, the density is greater than 2x10 ^5…
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We have used a laser heterodyne spectrometer to resolve the emission line profile of the 63 micron 3P1 - 3P2 fine-structure transition of O I at two locations in M42. Comparison of the peak antenna temperature with that of the 158 micron C II fine-structure line shows that the gas kinetic temperature in the photodissociation region near theta1C is 175 - 220 K, the density is greater than 2x10 ^5 cm-3, and the hydrogen column density is about 1.5x10 ^22 cm-2. A somewhat lower temperature and column density are found in the IRc2 region, most likely reflecting the smaller UV flux. The observed width of the O I line is 6.8 km/s (FWHM) at theta1C, which is slightly broadened over the intrinsic linewidth by optical depth effects. No significant other differences between the O I and C II line profiles are seen, which shows that the narrow emission from both neutral atomic oxygen and ionized carbon comes from the PDR. The O I data do not rule out the possibility of weak broad-velocity emission from shock-excited gas at IRc2, but the C II data show no such effect, as expected from non-ionizing shock models.
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Submitted 26 March, 1996;
originally announced March 1996.
