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High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
Authors:
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
M. Costa,
G-F. Dalla Betta,
M. Ferrero,
F. Ficorella,
G. Gioachin,
L. Lanteri,
M. Mandurrino,
L. Menzio,
R. Mulargia,
L. Pancheri,
G. Paternoster,
A. Rojas,
H-F W. Sadrozinski,
A. Seiden,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sen…
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The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface.
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Submitted 24 November, 2022;
originally announced November 2022.
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DC-coupled resistive silicon detectors for 4-D tracking
Authors:
L. Menzio,
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
M. Costa,
G-F. Dalla Betta,
M. Ferrero,
F. Ficorella,
G. Gioachin,
M. Mandurrino,
L. Pancheri,
G. Paternoster,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key feat…
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In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution.
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Submitted 14 April, 2022;
originally announced April 2022.
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Fully Depleted Monolithic Active Microstrip Sensors: TCAD simulation study of an innovative design concept
Authors:
Lorenzo De Cilladi,
Thomas Corradino,
Gian-Franco Dalla Betta,
Coralie Neubüser,
Lucio Pancheri
Abstract:
The paper presents the simulation studies of 10 $μ$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project…
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The paper presents the simulation studies of 10 $μ$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A TCAD simulation campaign was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics and optimising the sensor layout for enhanced performance in terms of low capacitance, fast charge collection and low-power operation. A very fine pitch of 10 $μ$m was chosen to provide very high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionising doses of the order of 10 to 10$^5$ krad were also modelled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available at the beginning of 2021.
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Submitted 22 January, 2021;
originally announced January 2021.
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Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science
Authors:
Coralie Neubüser,
Thomas Corradino,
Gian-Franco Dalla Betta,
Lorenzo De Cilladi,
Lucio Pancheri
Abstract:
Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast a…
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Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast and uniform response overall the pixel matrix. The functionality of these devices has been shown in previous proof-of-concept productions. In this article we describe the optimization of the test pixel designs, that will be implemented in the first engineering run of the demonstrator chip of the ARCADIA project. These optimization procedures include radiation damage models, that have been employed in Technology Computer Aided Design simulations to predict the sensors behavior in different working environments.
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Submitted 18 August, 2021; v1 submitted 19 November, 2020;
originally announced November 2020.
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Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
Authors:
M. Tornago,
R. Arcidiacono,
N. Cartiglia,
M. Costa,
M. Ferrero,
M. Mandurrino,
F. Siviero,
V. Sola,
A. Staiano,
A. Apresyan,
K. Di Petrillo,
R. Heller,
S. Los,
G. Borghi,
M. Boscardin,
G-F Dalla Betta,
F. Ficorella,
L. Pancheri,
G. Paternoster,
H. Sadrozinski,
A. Seiden
Abstract:
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained v…
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This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an im**ing particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the $n^+$ do** profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between $2.5\; μm$ for 70-100 pad-pitch geometry and $17\; μm$ with 200-500 matrices, a factor of 10 better than what is achievable in binary read-out ($bin\; size/ \sqrt{12}$). Beam test data show a temporal resolution of $\sim 40\; ps$ for 200-$μm$ pitch devices, in line with the best performances of LGAD sensors at the same gain.
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Submitted 11 February, 2021; v1 submitted 18 July, 2020;
originally announced July 2020.
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Intrinsic time resolution of 3D-trench silicon pixels for charged particle detection
Authors:
Lucio Anderlini,
Mauro Aresti,
Andrea Bizzeti,
Maurizio Boscardin,
Alessandro Cardini,
Gian-Franco Dalla Betta,
Marco Ferrero,
Giulio Forcolin,
Michela Garau,
Adriano Lai,
Andrea Lampis,
Angelo Loi,
Chiara Lucarelli,
Roberto Mendicino,
Roberto Mulargia,
Margherita Obertino,
Enrico Robutti,
Sabina Ronchin,
Marta Ruspa,
Stefania Vecchi
Abstract:
In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average repetition rates of tens of MHz on sensor pixels having a pitch of 50$μ$m are typical minimum requirements. This poses an important scientific and technological…
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In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average repetition rates of tens of MHz on sensor pixels having a pitch of 50$μ$m are typical minimum requirements. This poses an important scientific and technological challenge on the development of particle sensors and processing electronics. The TIMESPOT initiative (which stands for TIME and SPace real-time Operating Tracker) aims at the development of a full prototype detection system suitable for the particle trackers of the next-to-come particle physics experiments. This paper describes the results obtained on the first batch of TIMESPOT silicon sensors, based on a novel 3D MEMS (micro electro-mechanical systems) design. Following this approach, the performance of other ongoing silicon sensor developments has been matched and overcome, while using a technology which is known to be robust against radiation degradation. A time resolution of the order of 20ps has been measured at room temperature suggesting also possible improvements after further optimisations of the front-end electronics processing stage.
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Submitted 29 July, 2020; v1 submitted 22 April, 2020;
originally announced April 2020.
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Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5x10**16 neq cm**-2
Authors:
Roberto Mendicino,
Maurizio Boscardin,
Gian-Franco Dalla Betta
Abstract:
We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5x10**16 neq cm**-2. We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effec…
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We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5x10**16 neq cm**-2. We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effects at high voltage. These results confirm the very high radiation tolerance of small-pitch 3D sensors well beyond the maximum fluences expected at the High Luminosity LHC.
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Submitted 13 October, 2018;
originally announced October 2018.
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Production and Integration of the ATLAS Insertable B-Layer
Authors:
B. Abbott,
J. Albert,
F. Alberti,
M. Alex,
G. Alimonti,
S. Alkire,
P. Allport,
S. Altenheiner,
L. Ancu,
E. Anderssen,
A. Andreani,
A. Andreazza,
B. Axen,
J. Arguin,
M. Backhaus,
G. Balbi,
J. Ballansat,
M. Barbero,
G. Barbier,
A. Bassalat,
R. Bates,
P. Baudin,
M. Battaglia,
T. Beau,
R. Beccherle
, et al. (352 additional authors not shown)
Abstract:
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i…
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During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.
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Submitted 6 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Thin and edgeless sensors for ATLAS pixel detector upgrade
Authors:
Audrey Ducourthial,
Marco Bomben,
Giovanni Calderini,
Louis D'Eramo,
Giovanni Marchiori,
Ilaria Luise,
Alvise Bagolini,
Maurizio Boscardin,
Luciano Bosisio,
Giovanni Darbo,
Gian-Franco Dalla Betta,
Gabriele Giacomini,
Marco Meschini,
Alberto Messineo,
Sabina Ronchin,
Nicola Zorzi
Abstract:
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is mi…
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To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 μm thick n-on-p sensors with active edge, a second one composed of 100 and 130 μm thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY and their performance before and after irradiation will be presented.
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Submitted 10 October, 2017;
originally announced October 2017.
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First Production of New Thin 3D Sensors for HL-LHC at FBK
Authors:
DMS Sultan,
Gian-Franco Dalla Betta,
Roberto Mendicino,
Maurizio Boscardin,
Sabina Ronchin,
Nicola Zorzi
Abstract:
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of…
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Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.
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Submitted 2 December, 2016;
originally announced December 2016.
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The INFN-FBK Phase-2 R{\&}D Program
Authors:
Gian-Franco Dalla Betta,
Maurizio Boscardin,
Marco Bomben,
Mirko Brianzi,
Giovanni Calderini,
Giovanni Darbo,
Roberto Dell Orso,
Andrea Gaudiello,
Gabriele Giacomini,
Roberto Mendicino,
Marco Meschini,
Alberto Messineo,
Sabina Ronchin,
D M S Sultan,
Nicola Zorzi
Abstract:
We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radia…
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We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes.
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Submitted 2 December, 2016;
originally announced December 2016.
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Development of a new generation of 3D pixel sensors for HL-LHC
Authors:
Gian-Franco Dalla Betta,
Maurizio Boscardin,
Giovanni Darbo,
Roberto Mendicino,
Marco Meschini,
Alberto Messineo,
Sabina Ronchin,
DMS Sultan,
Nicola Zorzi
Abstract:
This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.
This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.
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Submitted 2 December, 2016;
originally announced December 2016.
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Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC
Authors:
Gian-Franco Dalla Betta,
Maurizio Boscardin,
Roberto Mendicino,
Sabina Ronchin,
DMS Sultan,
Nicola Zorzi
Abstract:
We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considere…
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We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6-inch wafers.
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Submitted 2 December, 2016;
originally announced December 2016.
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Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade
Authors:
ATLAS 3D Collaboration,
P. Grenier,
G. Alimonti,
M. Barbero,
R. Bates,
E. Bolle,
M. Borri,
M. Boscardin,
C. Buttar,
M. Capua,
M. Cavalli-Sforza,
M. Cobal,
A. Cristofoli,
G-F. Dalla Betta,
G. Darbo,
C. Da Vià,
E. Devetak,
B. DeWilde,
B. Di Girolamo,
D. Dobos,
K. Einsweiler,
D. Esseni,
S. Fazio,
C. Fleta,
J. Freestone
, et al. (68 additional authors not shown)
Abstract:
Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sen…
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Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlap** bias and read-out electrodes were tested and showed comparable performance.
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Submitted 21 January, 2011;
originally announced January 2011.
