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Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing
Authors:
Xiqiao Wang,
Joel Howard,
Eyob A. Sete,
Greg Stiehl,
Cameron Kopas,
Stefano Poletto,
Xian Wu,
Mark Field,
Nicholas Sharac,
Christopher Eckberg,
Hilal Cansizoglu,
Raja Katta,
Josh Mutus,
Andrew Bestwick,
Kameshwar Yadavalli,
David P. Pappas
Abstract:
Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaini…
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Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaining high coherence. Here, we demonstrate precision tuning of the maximum $|0\rangle\rightarrow |1\rangle$ transition frequency ($f_{01}^{\rm max}$) of tunable transmon qubits by performing ABAA at room temperature using commercially available test equipment. We characterize the impact of junction relaxation and aging on resistance spread after tuning, and demonstrate a frequency equivalent tuning precision of 7.7 MHz ($0.17\%$) based on targeted resistance tuning on hundreds of qubits, with a resistance tuning range up to $18.5\%$. Cryogenic measurements on tuned and untuned qubits show evidence of improved coherence after ABAA with no significant impact on tunability. Despite a small global offset, we show an empirical $f_{01}^{\rm max}$ tuning precision of 18.4 MHz by tuning a set of multi-qubit processors targeting their designed Hamiltonians. We experimentally characterize high-fidelity parametric resonance iSWAP gates on two ABAA-tuned 9-qubit processors with fidelity as high as $99.51\pm 0.20\%$. On the best-performing device, we measured across the device a median fidelity of $99.22\%$ and an average fidelity of $99.13\pm 0.12 \%$. Yield modeling analysis predicts high detuning-edge-yield using ABAA beyond the 1000-qubit scale. These results demonstrate the cutting-edge capability of frequency targeting using ABAA and open up a new avenue to systematically improving Hamiltonian targeting and optimization for scaling high-performance superconducting quantum processors.
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Submitted 8 July, 2024;
originally announced July 2024.
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Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
Authors:
David P. Pappas,
Mark Field,
Cameron Kopas,
Joel A. Howard,
Xiqiao Wang,
Ella Lachman,
Lin Zhou,
**su Oh,
Kameshwar Yadavalli,
Eyob A. Sete,
Andrew Bestwick,
Matthew J. Kramer,
Joshua Y. Mutus
Abstract:
We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongl…
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We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of $\approx 2 \times10^{-6}$, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics.
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Submitted 26 February, 2024; v1 submitted 14 January, 2024;
originally announced January 2024.
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Modular Superconducting Qubit Architecture with a Multi-chip Tunable Coupler
Authors:
Mark Field,
Angela Q. Chen,
Ben Scharmann,
Eyob A. Sete,
Feyza Oruc,
Kim Vu,
Valentin Kosenko,
Joshua Y. Mutus,
Stefano Poletto,
Andrew Bestwick
Abstract:
We use a floating tunable coupler to mediate interactions between qubits on separate chips to build a modular architecture. We demonstrate three different designs of multi-chip tunable couplers using vacuum gap capacitors or superconducting indium bump bonds to connect the coupler to a microwave line on a common substrate and then connect to the qubit on the next chip. We show that the zero-coupli…
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We use a floating tunable coupler to mediate interactions between qubits on separate chips to build a modular architecture. We demonstrate three different designs of multi-chip tunable couplers using vacuum gap capacitors or superconducting indium bump bonds to connect the coupler to a microwave line on a common substrate and then connect to the qubit on the next chip. We show that the zero-coupling condition between qubits on separate chips can be achieved in each design and that the relaxation rates for the coupler and qubits are not noticeably affected by the extra circuit elements. Finally, we demonstrate two-qubit gate operations with fidelity at the same level as qubits with a tunable coupler on a single chip. Using one or more indium bonds does not degrade qubit coherence or impact the performance of two-qubit gates.
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Submitted 1 March, 2024; v1 submitted 17 August, 2023;
originally announced August 2023.
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Full control of superconducting qubits with combined on-chip microwave and flux lines
Authors:
Riccardo Manenti,
Eyob A. Sete,
Angela Q. Chen,
Shobhan Kulshreshtha,
Jen-Hao Yeh,
Feyza Oruc,
Andrew Bestwick,
Mark Field,
Keith Jackson,
Stefano Poletto
Abstract:
As the field of quantum computing progresses to larger-scale devices, multiplexing will be crucial to scale quantum processors. While multiplexed readout is common practice for superconducting devices, relatively little work has been reported about the combination of flux and microwave control lines. Here, we present a method to integrate a microwave line and a flux line into a single "XYZ line".…
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As the field of quantum computing progresses to larger-scale devices, multiplexing will be crucial to scale quantum processors. While multiplexed readout is common practice for superconducting devices, relatively little work has been reported about the combination of flux and microwave control lines. Here, we present a method to integrate a microwave line and a flux line into a single "XYZ line". This combined control line allows us to perform fast single-qubit gates as well as to deliver flux signals to the qubits. The measured relaxation times of the qubits are comparable to state-of-art devices employing separate control lines. We benchmark the fidelity of single-qubit gates with randomized benchmarking, achieving a fidelity above 99.5%, and we demonstrate that XYZ lines can in principle be used to run parametric entangling gates.
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Submitted 13 July, 2021;
originally announced July 2021.
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Entanglement Across Separate Silicon Dies in a Modular Superconducting Qubit Device
Authors:
Alysson Gold,
JP Paquette,
Anna Stockklauser,
Matthew J. Reagor,
M. Sohaib Alam,
Andrew Bestwick,
Nicolas Didier,
Ani Nersisyan,
Feyza Oruc,
Armin Razavi,
Ben Scharmann,
Eyob A. Sete,
Biswajit Sur,
Davide Venturelli,
Cody James Winkleblack,
Filip Wudarski,
Mike Harburn,
Chad Rigetti
Abstract:
Assembling future large-scale quantum computers out of smaller, specialized modules promises to simplify a number of formidable science and engineering challenges. One of the primary challenges in develo** a modular architecture is in engineering high fidelity, low-latency quantum interconnects between modules. Here we demonstrate a modular solid state architecture with deterministic inter-modul…
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Assembling future large-scale quantum computers out of smaller, specialized modules promises to simplify a number of formidable science and engineering challenges. One of the primary challenges in develo** a modular architecture is in engineering high fidelity, low-latency quantum interconnects between modules. Here we demonstrate a modular solid state architecture with deterministic inter-module coupling between four physically separate, interchangeable superconducting qubit integrated circuits, achieving two-qubit gate fidelities as high as 99.1$\pm0.5$\% and 98.3$\pm$0.3\% for iSWAP and CZ entangling gates, respectively. The quality of the inter-module entanglement is further confirmed by a demonstration of Bell-inequality violation for disjoint pairs of entangled qubits across the four separate silicon dies. Having proven out the fundamental building blocks, this work provides the technological foundations for a modular quantum processor: technology which will accelerate near-term experimental efforts and open up new paths to the fault-tolerant era for solid state qubit architectures.
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Submitted 11 March, 2021; v1 submitted 25 February, 2021;
originally announced February 2021.
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Manufacturing low dissipation superconducting quantum processors
Authors:
Ani Nersisyan,
Stefano Poletto,
Nasser Alidoust,
Riccardo Manenti,
Russ Renzas,
Cat-Vu Bui,
Kim Vu,
Tyler Whyland,
Yuvraj Mohan,
Eyob A. Sete,
Sam Stanwyck,
Andrew Bestwick,
Matthew Reagor
Abstract:
Enabling applications for solid state quantum technology will require systematically reducing noise, particularly dissipation, in these systems. Yet, when multiple decay channels are present in a system with similar weight, resolution to distinguish relatively small changes is necessary to infer improvements to noise levels. For superconducting qubits, uncontrolled variation of nominal performance…
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Enabling applications for solid state quantum technology will require systematically reducing noise, particularly dissipation, in these systems. Yet, when multiple decay channels are present in a system with similar weight, resolution to distinguish relatively small changes is necessary to infer improvements to noise levels. For superconducting qubits, uncontrolled variation of nominal performance makes obtaining such resolution challenging. Here, we approach this problem by investigating specific combinations of previously reported fabrication techniques on the quality of 242 thin film superconducting resonators and qubits. Our results quantify the influence of elementary processes on dissipation at key interfaces. We report that an end-to-end optimization of the manufacturing process that integrates multiple small improvements together can produce an average ${\overline{T}_{1}=76\pm13~μ}$s across 24 qubits with the best qubits having ${T_1\geq110~μ}$s. Moreover, our analysis places bounds on energy decay rates for three fabrication-related loss channels present in state-of-the-art superconducting qubits. Understanding dissipation through such systematic analysis may pave the way for lower noise solid state quantum computers.
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Submitted 23 January, 2019;
originally announced January 2019.
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Unsupervised Machine Learning on a Hybrid Quantum Computer
Authors:
J. S. Otterbach,
R. Manenti,
N. Alidoust,
A. Bestwick,
M. Block,
B. Bloom,
S. Caldwell,
N. Didier,
E. Schuyler Fried,
S. Hong,
P. Karalekas,
C. B. Osborn,
A. Papageorge,
E. C. Peterson,
G. Prawiroatmodjo,
N. Rubin,
Colm A. Ryan,
D. Scarabelli,
M. Scheer,
E. A. Sete,
P. Sivarajah,
Robert S. Smith,
A. Staley,
N. Tezak,
W. J. Zeng
, et al. (5 additional authors not shown)
Abstract:
Machine learning techniques have led to broad adoption of a statistical model of computing. The statistical distributions natively available on quantum processors are a superset of those available classically. Harnessing this attribute has the potential to accelerate or otherwise improve machine learning relative to purely classical performance. A key challenge toward that goal is learning to hybr…
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Machine learning techniques have led to broad adoption of a statistical model of computing. The statistical distributions natively available on quantum processors are a superset of those available classically. Harnessing this attribute has the potential to accelerate or otherwise improve machine learning relative to purely classical performance. A key challenge toward that goal is learning to hybridize classical computing resources and traditional learning techniques with the emerging capabilities of general purpose quantum processors. Here, we demonstrate such hybridization by training a 19-qubit gate model processor to solve a clustering problem, a foundational challenge in unsupervised learning. We use the quantum approximate optimization algorithm in conjunction with a gradient-free Bayesian optimization to train the quantum machine. This quantum/classical hybrid algorithm shows robustness to realistic noise, and we find evidence that classical optimization can be used to train around both coherent and incoherent imperfections.
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Submitted 15 December, 2017;
originally announced December 2017.
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Superconducting Through-Silicon Vias for Quantum Integrated Circuits
Authors:
Mehrnoosh Vahidpour,
William O'Brien,
Jon Tyler Whyland,
Joel Angeles,
Jayss Marshall,
Diego Scarabelli,
Genya Crossman,
Kamal Yadav,
Yuvraj Mohan,
Catvu Bui,
Vijay Rawat,
Russ Renzas,
Nagesh Vodrahalli,
Andrew Bestwick,
Chad Rigetti
Abstract:
We describe a microfabrication process for superconducting through-silicon vias appropriate for use in superconducting qubit quantum processors. With a sloped-wall via geometry, we can use non-conformal metal deposition methods such as electron-beam evaporation and sputtering, which reliably deposit high quality superconducting films. Via superconductivity is validated by demonstrating zero via-to…
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We describe a microfabrication process for superconducting through-silicon vias appropriate for use in superconducting qubit quantum processors. With a sloped-wall via geometry, we can use non-conformal metal deposition methods such as electron-beam evaporation and sputtering, which reliably deposit high quality superconducting films. Via superconductivity is validated by demonstrating zero via-to-via resistance below the critical temperature of aluminum.
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Submitted 7 August, 2017;
originally announced August 2017.
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Superconducting Caps for Quantum Integrated Circuits
Authors:
William O'Brien,
Mehrnoosh Vahidpour,
Jon Tyler Whyland,
Joel Angeles,
Jayss Marshall,
Diego Scarabelli,
Genya Crossman,
Kamal Yadav,
Yuvraj Mohan,
Catvu Bui,
Vijay Rawat,
Russ Renzas,
Nagesh Vodrahalli,
Andrew Bestwick,
Chad Rigetti
Abstract:
We report on the fabrication and metrology of superconducting caps for qubit circuits. As part of a 3D quantum integrated circuit architecture, a cap chip forms the upper half of an enclosure that provides isolation, increases vacuum participation ratio, and improves performance of individual resonant elements. Here, we demonstrate that such caps can be reliably fabricated, placed on a circuit chi…
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We report on the fabrication and metrology of superconducting caps for qubit circuits. As part of a 3D quantum integrated circuit architecture, a cap chip forms the upper half of an enclosure that provides isolation, increases vacuum participation ratio, and improves performance of individual resonant elements. Here, we demonstrate that such caps can be reliably fabricated, placed on a circuit chip, and form superconducting connections to the circuit.
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Submitted 7 August, 2017;
originally announced August 2017.
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Demonstration of Universal Parametric Entangling Gates on a Multi-Qubit Lattice
Authors:
M. Reagor,
C. B. Osborn,
N. Tezak,
A. Staley,
G. Prawiroatmodjo,
M. Scheer,
N. Alidoust,
E. A. Sete,
N. Didier,
M. P. da Silva,
E. Acala,
J. Angeles,
A. Bestwick,
M. Block,
B. Bloom,
A. Bradley,
C. Bui,
S. Caldwell,
L. Capelluto,
R. Chilcott,
J. Cordova,
G. Crossman,
M. Curtis,
S. Deshpande,
T. El Bouayadi
, et al. (34 additional authors not shown)
Abstract:
We show that parametric coupling techniques can be used to generate selective entangling interactions for multi-qubit processors. By inducing coherent population exchange between adjacent qubits under frequency modulation, we implement a universal gateset for a linear array of four superconducting qubits. An average process fidelity of $\mathcal{F}=93\%$ is estimated for three two-qubit gates via…
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We show that parametric coupling techniques can be used to generate selective entangling interactions for multi-qubit processors. By inducing coherent population exchange between adjacent qubits under frequency modulation, we implement a universal gateset for a linear array of four superconducting qubits. An average process fidelity of $\mathcal{F}=93\%$ is estimated for three two-qubit gates via quantum process tomography. We establish the suitability of these techniques for computation by preparing a four-qubit maximally entangled state and comparing the estimated state fidelity against the expected performance of the individual entangling gates. In addition, we prepare an eight-qubit register in all possible bitstring permutations and monitor the fidelity of a two-qubit gate across one pair of these qubits. Across all such permutations, an average fidelity of $\mathcal{F}=91.6\pm2.6\%$ is observed. These results thus offer a path to a scalable architecture with high selectivity and low crosstalk.
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Submitted 26 February, 2018; v1 submitted 20 June, 2017;
originally announced June 2017.
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Parametrically Activated Entangling Gates Using Transmon Qubits
Authors:
S. Caldwell,
N. Didier,
C. A. Ryan,
E. A. Sete,
A. Hudson,
P. Karalekas,
R. Manenti,
M. Reagor,
M. P. da Silva,
R. Sinclair,
E. Acala,
N. Alidoust,
J. Angeles,
A. Bestwick,
M. Block,
B. Bloom,
A. Bradley,
C. Bui,
L. Capelluto,
R. Chilcott,
J. Cordova,
G. Crossman,
M. Curtis,
S. Deshpande,
T. El Bouayadi
, et al. (37 additional authors not shown)
Abstract:
We describe and implement a family of entangling gates activated by radio-frequency flux modulation applied to a tunable transmon that is statically coupled to a neighboring transmon. The effect of this modulation is the resonant exchange of photons directly between levels of the two-transmon system, obviating the need for mediating qubits or resonator modes and allowing for the full utilization o…
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We describe and implement a family of entangling gates activated by radio-frequency flux modulation applied to a tunable transmon that is statically coupled to a neighboring transmon. The effect of this modulation is the resonant exchange of photons directly between levels of the two-transmon system, obviating the need for mediating qubits or resonator modes and allowing for the full utilization of all qubits in a scalable architecture. The resonance condition is selective in both the frequency and amplitude of modulation and thus alleviates frequency crowding. We demonstrate the use of three such resonances to produce entangling gates that enable universal quantum computation: one iSWAP gate and two distinct controlled Z gates. We report interleaved randomized benchmarking results indicating gate error rates of 6% for the iSWAP (duration 135ns) and 9% for the controlled Z gates (durations 175 ns and 270 ns), limited largely by qubit coherence.
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Submitted 8 December, 2017; v1 submitted 20 June, 2017;
originally announced June 2017.
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Interplay of chiral and helical states in a Quantum Spin Hall Insulator lateral junction
Authors:
M. R. Calvo,
F. de Juan,
R. Ilan,
E. J. Fox,
A. J. Bestwick,
M. Mühlbauer,
J. Wang,
C. Ames,
P. Leubner,
C. Brüne,
S. C. Zhang,
H. Buhmann,
L. W. Molenkamp,
D. Goldhaber-Gordon
Abstract:
We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives…
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We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero in the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.
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Submitted 13 December, 2017; v1 submitted 27 February, 2017;
originally announced February 2017.
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Robust fractional quantum Hall effect and composite fermions in the $N=2$ Landau level in bilayer graphene
Authors:
Georgi Diankov,
Chi-Te Liang,
Francois Amet,
Patrick Gallagher,
Menyoung Lee,
Andrew J. Bestwick,
Kevin Tharratt,
William Coniglio,
Jan Jaroszynski,
K. Watanabe,
T. Taniguchi,
David Goldhaber-Gordon
Abstract:
The fractional quantum Hall (FQH) effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most FQH studies have focused on the lowest Landau level (LL), whose fractional states are successfully explained by the composite fermion (CF) model, in which an even number of magnetic flux quanta are attached to an electron and where states form the…
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The fractional quantum Hall (FQH) effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most FQH studies have focused on the lowest Landau level (LL), whose fractional states are successfully explained by the composite fermion (CF) model, in which an even number of magnetic flux quanta are attached to an electron and where states form the sequence of filling factors $ν= p/(2mp \pm 1)$, with $m$ and $p$ positive integers. In the widely-studied GaAs-based system, the CF picture is thought to become unstable for the $N \geq 2$ LL, where larger residual interactions between CFs are predicted and competing many-body phases have been observed. Here we report transport measurements of FQH states in the $N=2$ LL (filling factors $4 < ν< 8$) in bilayer graphene, a system with spin and valley degrees of freedom in all LLs, and an additional orbital degeneracy in the 8-fold degenerate $N=0$/$N=1$ LLs. In contrast with recent observations of particle-hole asymmetry in the $N=0$/$N=1$ LLs of bilayer graphene, the FQH states we observe in the $N=2$ LL are consistent with the CF model: within a LL, they form a complete sequence of particle-hole symmetric states whose relative strength is dependent on their denominators. The FQH states in the $N=2$ LL display energy gaps of a few Kelvin, comparable to and in some cases larger than those of fractional states in the $N=0$/$N=1$ LLs. The FQH states we observe form, to the best of our knowledge, the highest set of particle-hole symmetric pairs seen in any material system.
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Submitted 29 February, 2016;
originally announced March 2016.
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Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sb$_x$,Bi$_{1-x}$)$_2$Te$_3$
Authors:
Shreyas Patankar,
J. P. Hinton,
Joel Griesmar,
J. Orenstein,
J. S. Dodge,
Xufeng Kou,
Lei Pan,
Kang L. Wang,
A. J. Bestwick,
E. J. Fox,
D. Goldhaber-Gordon,
**g Wang,
Shou-Cheng Zhang
Abstract:
We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator $(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3$. Measurements of the complex Kerr angle, $Θ_K$, were performed as a function of photon energy in the range $0.8\text{ eV}<\hbarω<3.0\text{ eV}$. We observed a…
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We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator $(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3$. Measurements of the complex Kerr angle, $Θ_K$, were performed as a function of photon energy in the range $0.8\text{ eV}<\hbarω<3.0\text{ eV}$. We observed a peak in the real part of $Θ_K(ω)$ and zero crossing in the imaginary part that we attribute to resonant interaction with a spin-orbit avoided crossing located $\approx$ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of $Θ_K$ in the ultrathin film limit, $d\geq2$ quintuple layers. We find a sharp transition to zero remanent magnetization at 6 K for $d<8$~QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.
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Submitted 2 December, 2015; v1 submitted 4 May, 2015;
originally announced May 2015.
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Precise quantization of anomalous Hall effect near zero magnetic field
Authors:
A. J. Bestwick,
E. J. Fox,
Xufeng Kou,
Lei Pan,
Kang L. Wang,
D. Goldhaber-Gordon
Abstract:
We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic do**. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this beha…
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We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic do**. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this behavior are found to be caused by thermally-activated carriers, which can be eliminated by taking advantage of an unexpected magnetocaloric effect.
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Submitted 1 April, 2015; v1 submitted 9 December, 2014;
originally announced December 2014.
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Composite Fermions and Broken Symmetries in Graphene
Authors:
F. Amet,
A. J. Bestwick,
J. R. Williams,
L. Balicas,
K. Watanabe,
T. Taniguchi,
D. Goldhaber-Gordon
Abstract:
The electronic properties of graphene are described by a Dirac Hamiltonian with a fourfold symmetry of spin and valley. This symmetry may yield novel fractional quantum Hall (FQH) states at high magnetic field depending on the relative strength of symmetry breaking interactions. However, observing such states in transport remains challenging in graphene, as they are easily destroyed by disorder. I…
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The electronic properties of graphene are described by a Dirac Hamiltonian with a fourfold symmetry of spin and valley. This symmetry may yield novel fractional quantum Hall (FQH) states at high magnetic field depending on the relative strength of symmetry breaking interactions. However, observing such states in transport remains challenging in graphene, as they are easily destroyed by disorder. In this work, we observe in the first two Landau levels (v<6) the composite-fermion sequences of FQH states at p/(2p+1) between each integer filling factor. In particular, odd numerator fractions appear between v=1 and v=2, suggesting a broken valley symmetry, consistent with our observation of a gap at charge neutrality and zero field. Contrary to our expectations, the evolution of gaps in a parallel magnetic field suggests that states in the first Landau level are not spin-polarized even up to very large out of plane fields.
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Submitted 13 October, 2014;
originally announced October 2014.
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Unconventional Josephson Effect in Hybrid Superconductor-Topological Insulator Devices
Authors:
J. R. Williams,
A. J. Bestwick,
P. Gallagher,
Seung Sae Hong,
Y. Cui,
Andrew S. Bleich,
J. G. Analytis,
I. R. Fisher,
D. Goldhaber-Gordon
Abstract:
We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological mo…
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We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological model which expands on the existing theory for topological insulator Josephson junctions.
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Submitted 10 September, 2012; v1 submitted 10 February, 2012;
originally announced February 2012.
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Magnetic Do** and Kondo Effect in Bi2Se3 Nanoribbons
Authors:
Judy J. Cha,
James R. Williams,
Desheng Kong,
Stefan Meister,
Hailin Peng,
Andrew J. Bestwick,
Patrick Gallagher,
David Goldhaber-Gordon,
Yi Cui
Abstract:
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume r…
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A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically-doped Bi2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the do** concentration is less than ~ 2%, low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics.
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Submitted 28 January, 2010;
originally announced January 2010.
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Relaxation and Dephasing in a Two-electron 13C Nanotube Double Quantum Dot
Authors:
H. O. H. Churchill,
F. Kuemmeth,
J. W. Harlow,
A. J. Bestwick,
E. I. Rashba,
K. Flensberg,
C. H. Stwertka,
T. Taychatanapat,
S. K. Watson,
C. M. Marcus
Abstract:
We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time, T1, first decreases with parallel magnetic field then goes through a minimum in a field of 1.4 T. We attribute both results to the spin-orbit-modified electronic spectrum of carbon nanotubes, which suppresses hyperf…
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We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time, T1, first decreases with parallel magnetic field then goes through a minimum in a field of 1.4 T. We attribute both results to the spin-orbit-modified electronic spectrum of carbon nanotubes, which suppresses hyperfine mediated relaxation and enhances relaxation due to soft phonons. The inhomogeneous dephasing time, T2*, is consistent with previous data on hyperfine coupling strength in 13C nanotubes.
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Submitted 19 November, 2008;
originally announced November 2008.
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Electron-nuclear interaction in 13C nanotube double quantum dots
Authors:
H. O. H. Churchill,
A. J. Bestwick,
J. W. Harlow,
F. Kuemmeth,
D. Marcos,
C. H. Stwertka,
S. K. Watson,
C. M. Marcus
Abstract:
For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource allowing storage and retrieval of quantum information. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double…
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For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource allowing storage and retrieval of quantum information. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double quantum dots with integrated charge sensors made from single-walled carbon nanotubes with a variable concentration of 13C (nuclear spin I=1/2) among the majority zero-nuclear-spin 12C atoms. Spin-sensitive transport in double-dot devices grown using methane with the natural abundance (~ 1%) of 13C is compared with similar devices grown using an enhanced (~99%) concentration of 13C. We observe strong isotope effects in spin-blockaded transport, and from the dependence on external magnetic field, estimate the hyperfine coupling in 13C nanotubes to be on the order of 100 micro-eV, two orders of magnitude larger than anticipated theoretically. 13C-enhanced nanotubes are an interesting new system for spin-based quantum information processing and memory, with nuclei that are strongly coupled to gate-controlled electrons, differ from nuclei in the substrate, are naturally confined to one dimension, lack quadrupolar coupling, and have a readily controllable concentration from less than one to 10^5 per electron.
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Submitted 2 December, 2008; v1 submitted 19 November, 2008;
originally announced November 2008.
