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GW effects on the topology of type-II Dirac cones in NiTe$_2$, PtSe$_2$ and PtTe$_2$
Authors:
Franz Fischer,
Abderrezak Torche,
Marta Prada,
Gabriel Bester
Abstract:
Many-body correlations are known to be responsible for a broad range of fascinating physical phenomena, introducing corrections that appear elusive at the mean-field level. An example of this is the Lifshitz transition that occurs as the Fermi surface topology changes when {\it e.g.} Coulomb interaction effects break into the picture. In particular, the Fermi velocity renormalization can lead a ty…
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Many-body correlations are known to be responsible for a broad range of fascinating physical phenomena, introducing corrections that appear elusive at the mean-field level. An example of this is the Lifshitz transition that occurs as the Fermi surface topology changes when {\it e.g.} Coulomb interaction effects break into the picture. In particular, the Fermi velocity renormalization can lead a type-II Weyl semimetal at mean-field level to become a trivial or a type-I Dirac material when correlations are accounted for, which is far from being obvious. In this work we scrutinize the band structure of NiTe$_2$, a material that features a type-II Dirac point near the Fermi level within the mean-field approach. Including GW-level correlations, our findings showcase anisotropic corrections on the Dirac carrier velocity exceeding $100 \, \%$ enhancements, underscoring the nuanced influence of electronic interactions in the band structure. We also consider type-II Dirac crossings in PtSe$_2$ and PtTe$_2$ and observe that including many-body effects via GW the band topology changes, featuring trivial topology and type-I Dirac crossings, respectively. Our findings highlights the necessity to evaluate the many-body effects on non-trivial bands, contributing essential insights to the broader exploration of many-body correlation effects in type-II Dirac points of condensed-matter systems.
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Submitted 3 July, 2024;
originally announced July 2024.
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Optical Properties of Gated Bilayer Graphene Quantum Dots with Trigonal War**
Authors:
Matthew Albert,
Daniel Miravet,
Yasser Saleem,
Katarzyna Sadecka,
Marek Korkusinski,
Gabriel Bester,
Pawel Hawrylak
Abstract:
We determine the optical properties of gated bilayer graphene quantum dots with trigonal war** (TW) of single-particle energy spectra. The lateral structure of metallic gates confines electrons and holes in a quantum dot (QD) electrostatically. The gated bilayer graphene energy spectrum is characterized by two K-valleys surrounded by three minivalleys with energies depending on the applied verti…
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We determine the optical properties of gated bilayer graphene quantum dots with trigonal war** (TW) of single-particle energy spectra. The lateral structure of metallic gates confines electrons and holes in a quantum dot (QD) electrostatically. The gated bilayer graphene energy spectrum is characterized by two K-valleys surrounded by three minivalleys with energies depending on the applied vertical electric field. Employing an atomistic tight-binding model, we compute the single-particle QD states and analyze the influence of TW on the energy spectrum as the lateral confining potential depth varies. We find a regime where the QD levels are dominated by the presence of three minivalleys around each K-valley. Next, we compute dipole matrix elements and analyze the oscillator strengths and optical selection rules for optical valence to conduction band transitions. We then include electron-electron interactions by first computing the microscopic Coulomb matrix elements, electron self-energy, and solving the Bethe-Salpeter equation to obtain the excitonic spectrum. Finally, we obtain the absorption spectrum for a shallow confining potential depth, which further amplifies the effects of TW on the optical properties. Our results predict the existence of two degenerate bright exciton states, each built of the three minivalley states that do not exist in the deep confinement regime, where the effects of TW are negligible.
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Submitted 15 May, 2024;
originally announced May 2024.
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Exciton-Phonon Coupling in Single Band-Gap Engineered ZnCdSe-Dot/CdS-Rod Nanocrystals
Authors:
Florian Johst,
Jannik Rebmann,
Hans Werners,
Lars Klemeyer,
Jagadesh Kopula Kesavan,
Dorota Koziej,
Christian Strelow,
Gabriel Bester,
Alf Mews,
Tobias Kipp
Abstract:
Exciton-phonon coupling limits the homogeneous emission linewidth of nanocrystals. Hence, a full understanding of it is crucial. In this work, we statistically investigate exciton-phonon coupling by performing single-particle spectroscopy on Zn$_{1-x}$Cd$_{x}$Se/CdS dot-in-rod nanocrystals at cryogenic temperatures ($T\approx 10~\rm{K}$). In situ cation exchange enables us to analyze different ban…
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Exciton-phonon coupling limits the homogeneous emission linewidth of nanocrystals. Hence, a full understanding of it is crucial. In this work, we statistically investigate exciton-phonon coupling by performing single-particle spectroscopy on Zn$_{1-x}$Cd$_{x}$Se/CdS dot-in-rod nanocrystals at cryogenic temperatures ($T\approx 10~\rm{K}$). In situ cation exchange enables us to analyze different band alignments and thereby different charge-carrier distributions. We find that the relative intensities of the longitudinal optical S- and Se-type phonon replicas correlate with the charge-carrier distribution. Our experimental findings are complemented with quantum mechanical calculations within the effective mass approximation that hint at the relevance of surface charges.
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Submitted 17 April, 2024;
originally announced April 2024.
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Empirical Band-Gap Correction for LDA-Derived Atomic Effective Pseudopotentials
Authors:
Surender Kumar,
Hanh Bui,
Gabriel Bester
Abstract:
Atomic effective pseudopotentials enable atomistic calculations at the level of accuracy of density functional theory for semiconductor nanostructures with up to fifty thousand atoms. Since they are directly derived from ab-initio calculations performed in the local density approximation (LDA), they inherit the typical underestimated band gaps and effective masses. We propose an empirical correcti…
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Atomic effective pseudopotentials enable atomistic calculations at the level of accuracy of density functional theory for semiconductor nanostructures with up to fifty thousand atoms. Since they are directly derived from ab-initio calculations performed in the local density approximation (LDA), they inherit the typical underestimated band gaps and effective masses. We propose an empirical correction based on the modification of the non-local part of the pseudopotential and demonstrate good performance for bulk binary materials (InP, ZnS, HgTe, GaAs) and quantum dots (InP, CdSe, GaAs) with diameters ranging from 1.0 nm to 4.45 nm. Additionally, we provide a simple analytic expression to obtain accurate quasiparticle and optical band gaps for InP, CdSe, and GaAs QDs, from standard LDA calculation.
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Submitted 13 March, 2024;
originally announced March 2024.
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Superexchange Mechanism in Coupled Triangulenes Forming Spin-1 Chains
Authors:
Yasser Saleem,
Torben Steenbock,
Emha Riyadhul **an Alhadi,
Weronika Pasek,
Gabriel Bester,
Pawel Potasz
Abstract:
We show that the origin of the antiferromagnetic coupling in spin-1 triangulene chains, which were recently synthesized and measured by Mishra et al. Nature 598, 287-292 (2021) originates from a superexchange mechanism. This process, mediated by inter-triangulene states, opens the possibility to control parameters in the effective bilinear-biquadratic spin model. We start from the derivation of an…
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We show that the origin of the antiferromagnetic coupling in spin-1 triangulene chains, which were recently synthesized and measured by Mishra et al. Nature 598, 287-292 (2021) originates from a superexchange mechanism. This process, mediated by inter-triangulene states, opens the possibility to control parameters in the effective bilinear-biquadratic spin model. We start from the derivation of an effective tight-binding model for triangulene chains using a combination of tight-binding and Hartree-Fock methods fitted to hybrid density functional theory results. Next, correlation effects are investigated within the configuration interaction method. Our low-energy many-body spectrum for $N_{\rm Tr}=2$ and $N_{\rm Tr}=4$ triangulene chains agree well with the bilinear-biquadratic spin-1 chain antiferromagnetic model when indirect coupling processes, and superexchange coupling between triangulene spins are taken into account.
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Submitted 12 March, 2024;
originally announced March 2024.
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Electrically Tunable Fine Structure of Negatively Charged Excitons in Gated Bilayer Graphene Quantum Dots
Authors:
Katarzyna Sadecka,
Yasser Saleem,
Daniel Miravet,
Matthew Albert,
Marek Korkusinski,
Gabriel Bester,
Pawel Hawrylak
Abstract:
We predict here the fine structure of an electrically tunable negatively charged exciton (trion) composed of two electrons and a hole confined in a gated bilayer graphene quantum dot (QD). We start with an atomistic approach, allowing us to compute confined electron and confined hole QD states for a structure containing over one million atoms. Using atomistic wavefunctions we compute Coulomb matri…
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We predict here the fine structure of an electrically tunable negatively charged exciton (trion) composed of two electrons and a hole confined in a gated bilayer graphene quantum dot (QD). We start with an atomistic approach, allowing us to compute confined electron and confined hole QD states for a structure containing over one million atoms. Using atomistic wavefunctions we compute Coulomb matrix elements and self-energies. In the next step, by solving the Bethe-Salpeter-like equation for trions, we describe a negatively charged exciton, built as a strongly interacting interlayer complex of two electrons in the conduction band and one hole in the valence band. Unlike in conventional semiconducting QDs, we show that the trion contains a fine structure composed of ten states arising from the valley and spin degrees of freedom. Finally, we obtain absorption into and emission from the trion states. We predict the existence of bright low-energy states and propose to extract the fine structure of the trion using the temperature dependence of emission spectra.
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Submitted 11 December, 2023;
originally announced December 2023.
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Determination of the phonon sidebands in the photoluminescence spectrum of semiconductor nanoclusters from ab initio calculations
Authors:
Peng Han,
Gabriel Bester
Abstract:
We propose a theoretical approach based on (constrained) density functional theory and the Franck-Condon approximation for the calculation of the temperature dependent photoluminescence of nanostructures. The method is computationally advantageous and only slightly more demanding than a standard density functional theory calculation and includes transitions into multiphonon final states (higher cl…
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We propose a theoretical approach based on (constrained) density functional theory and the Franck-Condon approximation for the calculation of the temperature dependent photoluminescence of nanostructures. The method is computationally advantageous and only slightly more demanding than a standard density functional theory calculation and includes transitions into multiphonon final states (higher class transitions). We use the approach for Si and CdSe colloidal nanoclusters (NCs) with up to 693 atoms and obtain very good agreement with experiment which allows us to identify specific peaks and explain their origin. Generally, breathing type modes are shown to dominate the phonon replicas, while optical modes have significant contributions for CdSe NCs and play a lesser role in Si NCs. We obtain significant anti-Stokes peak starting at 140K for Si NC explaining the broadening observed in the corresponding experiment. We also apply the method to small molecular-like carbon structures (diamondoids), where electron-phonon coupling is typically large, and find that multiphonon processes (up to class 4) are very relevant and necessary to compare favorably with experiment. While it is crucial to include these multiphonon states in the small diamondoids with few tens of atoms, neglecting them in only marginally larger Si$_{87}$H$_{76}$ and Cd$_{43}$Se$_{44}$H$^*_{76}$ (and larger) quantum dots represents a good approximation.
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Submitted 2 November, 2023;
originally announced November 2023.
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Accurate force-field methodology capturing atomic reconstructions in transition metal dichalcogenide moiré systems
Authors:
Carl Emil Mørch Nielsen,
Miguel da Cruz,
Abderrazak Torche,
Gabriel Bester
Abstract:
In this work, a generalized force-field methodology for the relaxation of large moiré heterostructures is proposed. The force-field parameters are optimized to accurately reproduce the structural degrees of freedom of some computationally manageable cells relaxed using density functional theory. The parameters can then be used to handle large moiré systems. We specialize to the case of 2H-phased t…
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In this work, a generalized force-field methodology for the relaxation of large moiré heterostructures is proposed. The force-field parameters are optimized to accurately reproduce the structural degrees of freedom of some computationally manageable cells relaxed using density functional theory. The parameters can then be used to handle large moiré systems. We specialize to the case of 2H-phased twisted transition-metal dichalcogenide homo- and heterobilayers using a combination of the Stillinger-Weber intralayer- and the Kolmogorov-Crespi interlayer-potential. Force-field parameters are developed for all combinations of MX$_2$ for $\text{M}\in\{\text{Mo},\text{W}\}$ and $\text{X}\in\{\text{S},\text{Se},\text{Te}\}$. The results show agreement within 20 meV in terms of band structure between density functional theory and force-field relaxation. Using the relaxed structures, a simplified and systematic scheme for the extraction of the interlayer moiré potential is presented for both R- and H-stacked systems. We show that in-plane and out-of-plane relaxation effects on the moiré potential, which is made both deeper and wider after relaxation, are essential. An interpolation based methodology for the calculation of the interlayer binding energy is also proposed. Finally, we show that atomic reconstruction, which is captured by the force-field method, becomes especially prominent for angles below 4-5$^\circ$, when there is no mismatch in lattice constant between layers.
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Submitted 28 June, 2023;
originally announced June 2023.
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Role of Magnetic Coupling in Photoluminescence Kinetics of Mn2+-doped ZnS Nanoplatelets
Authors:
Liwei Dai,
Abderrezak Torche,
Christian Strelow,
Tobias Kipp,
Thanh Huyen Vuong,
Jabor Rabeah,
Kevin Oldenburg,
Gabriel Bester,
Alf Mews,
Christian Klinke,
Rostyslav Lesyuk
Abstract:
Mn2+-doped semiconductor nanocrystals with tuned location and concentration of Mn2+ ions can yield diverse coupling regimes, which can highly influence their optical properties such as emission wavelength and photoluminescence (PL) lifetime. However, investigation on the relationship between the Mn2+ concentration and the optical properties is still challenging because of the complex interactions…
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Mn2+-doped semiconductor nanocrystals with tuned location and concentration of Mn2+ ions can yield diverse coupling regimes, which can highly influence their optical properties such as emission wavelength and photoluminescence (PL) lifetime. However, investigation on the relationship between the Mn2+ concentration and the optical properties is still challenging because of the complex interactions of Mn2+ ions and the host and between the Mn2+ ions. Here, atomically flat ZnS nanoplatelets (NPLs) with uniform thickness were chosen as matrixes for Mn2+ do**. Using time-resolved (TR) PL spectroscopy and density functional theory (DFT) calculations, a connection between coupling and PL kinetics of Mn2+ ions was established.
Moreover, it was found that the Mn2+ ions residing on the surface of a nanostructure produce emissive states and interfere with the change of properties by Mn2+/Mn2+ coupling.
In a configuration with suppressed surface contribution to the optical response we show the underlying physical reasons for double and triple exponential decay by DFT methods. We believe that the presented do** strategy and simulation methodology of the Mn2+-doped ZnS system is a universal platform to study dopant location- and concentration-dependent properties also in other semiconductors.
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Submitted 29 October, 2022;
originally announced October 2022.
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Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs(111)A vicinal substrate
Authors:
Andrea Barbiero,
Artur Tuktamyshev,
Geoffrey Pirard,
Jan Huwer,
Tina Müller,
R. Mark Stevenson,
Sergio Bietti,
Stefano Vichi,
Alexey Fedorov,
Gabriel Bester,
Stefano Sanguinetti,
Andrew J. Shields
Abstract:
The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum networks. Entangled light can be generated by solid state quantum emitters with naturally low fine structure splitting, such as highly symmetric InAs quantum dots (QDs) grown on (111)-oriented surfaces. Incorporating this k…
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The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum networks. Entangled light can be generated by solid state quantum emitters with naturally low fine structure splitting, such as highly symmetric InAs quantum dots (QDs) grown on (111)-oriented surfaces. Incorporating this kind of QDs into optical cavities is critical to achieve sufficient signal intensitiesfor applications, but has so far shown major complications. In this work we present droplet epitaxy of telecom-wavelength InAs QDs within an optical cavity on a vicinal (2° miscut) GaAs(111)A substrate. We show a remarkable enhancement of the photon extraction efficiency compared to previous reports together with a reduction of the density that facilitates the isolation of single spectral lines. Moreover, we characterise the exciton fine structure splitting and employ numerical simulations under the framework of the empirical pseudopotential and configuration interaction methods to study the impact of the miscut on the optical properties of the QDs. We demonstrate that the presence of miscut steps influences the polarisation of the excitonic states and introduces a preferential orientation in the $C_{3v}$ symmetry of the surface.
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Submitted 30 September, 2022; v1 submitted 23 February, 2022;
originally announced February 2022.
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Single Crystalline Colloidal Quasi-Two-Dimensional Tin Telluride
Authors:
Fu Li,
Jiecai Fu,
Abderrezak Torche,
Sascha Kull,
Andreas Kornowski,
Rostyslav Lesyuk,
Gabriel Bester,
Christian Klinke
Abstract:
Tin telluride is a narrow gap semiconductor with promising properties for IR optical applications and topological insulators. We report a convenient colloidal synthesis of quasi-two-dimensional SnTe nanocrystals through the hot-injection method in a non-polar solvent. By introducing the halide alkane 1-bromotetradecane as well as oleic acid and trioctylphosphine, the thickness of two dimensional S…
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Tin telluride is a narrow gap semiconductor with promising properties for IR optical applications and topological insulators. We report a convenient colloidal synthesis of quasi-two-dimensional SnTe nanocrystals through the hot-injection method in a non-polar solvent. By introducing the halide alkane 1-bromotetradecane as well as oleic acid and trioctylphosphine, the thickness of two dimensional SnTe nanostripes can be tuned down to 30 nm, while the lateral dimensional can reach 6 microns. The obtained SnTe nanostripes are single-crystalline with a rock-salt crystal structure. The absorption spectra demonstrate pronounced absorption features in the IR range revealing the effect of quantum confinement in such structures.
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Submitted 18 May, 2020;
originally announced May 2020.
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From wurtzite nanoplatelets to zinc blende nanorods: Simultaneous control of shape and phase in ultrathin ZnS nanocrystals
Authors:
Liwei Dai,
Rostyslav Lesyuk,
Anastasia Karpulevich,
Abderrezak Torche,
Gabriel Bester,
Christian Klinke
Abstract:
Ultrathin semiconductor nanocrystals (NCs) with at least one dimension below their exciton Bohr radius receive a rapidly increasing attention due to their unique physicochemical properties such as strong quantum confinement, large surface-to-volume ratio, and giant oscillator strength. These superior properties highly depend on the shape and crystal phase of semiconductor NCs. Slight changes in th…
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Ultrathin semiconductor nanocrystals (NCs) with at least one dimension below their exciton Bohr radius receive a rapidly increasing attention due to their unique physicochemical properties such as strong quantum confinement, large surface-to-volume ratio, and giant oscillator strength. These superior properties highly depend on the shape and crystal phase of semiconductor NCs. Slight changes in the shape and phase of NCs can cause significant changes in their properties. Therefore, it is crucial to controllably synthesize semiconductor NCs. Here, we demonstrate not only the synthesis of robust well-defined ultrathin ZnS nanoplatelets (NPLs) with excitonic absorption and emission, but also the precise shape and phase control of ZnS NCs based on a soft template strategy. The key feature of our approach is the tuning of the sulfur precursor amount, resulting in a simultaneous shape/phase transformation between wurtzite (WZ) ZnS NPLs and zinc blende (ZB) ZnS nanorods (NRs) at moderate temperatures (150 degree). UV-vis absorption and photoluminescence (PL) spectra reveal very distinct optical properties between WZ-ZnS NPLs and ZB-ZnS NRs. UV-vis absorption spectra of WZ-ZnS NPLs clearly exhibit a sharp excitonic peak that is not observed in ZB-ZnS NRs. Besides, the PL characterization shows that WZ-ZnS NPLs have a narrow excitonic emission peak (292 nm), while the ZB-ZnS NRs exhibit a broad collective emission band consisting of four emission peaks (335, 359, 395, and 468 nm). The appearance of excitonic features in the absorption spectra of ZnS NPLs is explained by interband electronic transitions, which is simulated in the framework of density functional theory (DFT). The presented simple and effective synthetic strategy opens a new path to synthesize further NCs with shape and phase control for advanced applications in electronics and photonics.
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Submitted 4 July, 2019;
originally announced July 2019.
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Frozen-phonon method for state anticrossing situations and its application to zero-point motion effects in diamondoids
Authors:
Pablo García-Risueño,
Peng Han,
Gabriel Bester
Abstract:
The frozen-phonon method, used to calculate electron-phonon coupling effects, requires calculations of the investigated structure using atomic coordinates displaced according to a certain phonon eigenmode. The process of "freezing-in" the specific phonon can bring electronic eigenstates that are energetically close in energy into an anticrossing. This electronic anticrossing effect is, however, un…
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The frozen-phonon method, used to calculate electron-phonon coupling effects, requires calculations of the investigated structure using atomic coordinates displaced according to a certain phonon eigenmode. The process of "freezing-in" the specific phonon can bring electronic eigenstates that are energetically close in energy into an anticrossing. This electronic anticrossing effect is, however, unrelated to the wanted electron-phonon coupling, and needs to be removed. We present a procedure how to deal with these problematic anticrossing situations and apply it to the band gap zero-point motion renormalization of sixteen diamondoids and urotropine using different exchange correlation functionals. We find gap renormalizations of diamondoids in the range of 150 - 400 meV and only 62 meV for urotropine due to the lone-pair character of the highest occupied molecular orbital of the latter.
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Submitted 10 April, 2019;
originally announced April 2019.
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Phonon-assisted Auger enables ultrafast charge transfer in CdSe Quantum Dot/Organic Molecule
Authors:
Zhi Wang,
Mona Rafipoor,
Pablo García Risueño,
Jan-Philip Merkl,
Peng Han,
Holger Lange,
Gabriel Bester
Abstract:
Charge transfer between photoexcited quantum dots and molecular acceptors is one of the key limiting processes in most applications of colloidal nanostructures, most prominently in photovoltaics. An atomistic detailed description of this process would open new ways to optimize existing and create new structures with targeted properties. We achieve a one-to-one comparison between ab-initio non-adia…
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Charge transfer between photoexcited quantum dots and molecular acceptors is one of the key limiting processes in most applications of colloidal nanostructures, most prominently in photovoltaics. An atomistic detailed description of this process would open new ways to optimize existing and create new structures with targeted properties. We achieve a one-to-one comparison between ab-initio non-adiabatic molecular dynamics calculations and transient absorption spectroscopy experiments, which allows us to draw a comprehensive atomistic picture of the charge transfer process, following the time evolution of the charge carrier across the electronic landscape and identifying the thereby induced vibrations. For two quantum dot sizes we find two qualitatively different processes. For the larger structure we find a relatively slow (τ= 516 fs) transfer process that we explain by the existence of a large energy detuning and weak vibronic coupling. For the smaller structure the process is ultrafast (τ= 20 fs) due to an efficient, phonon-assisted Auger process triggered by a strong electron-hole coupling.
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Submitted 21 December, 2018;
originally announced December 2018.
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Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics
Authors:
Xueyong Yuan,
Fritz Weihausen-Brinkmann,
Javier Martín-Sánchez,
Giovanni Piredda,
Vlastimil Křápek,
Yongheng Huo,
Huiying Huang,
Christian Schimpf,
Oliver G. Schmidt,
Johannes Edlinger,
Gabriel Bester,
Rinaldo Trotta,
Armando Rastelli
Abstract:
The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that th…
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The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in plane uniaxial stress. By using piezoelectric strain actuators featuring strain-amplification we study the evolution of the selection rules and excitonic fine-structure in a regime, in which quantum confinement can be regarded as a perturbation compared to strain in determining the symmetry properties of the system. The experimental and computational results suggest that uniaxial stress, may be the right tool to obtain quantum light sources with ideally oriented transition dipoles and enhanced oscillator strengths for integrated quantum photonics.
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Submitted 10 October, 2018; v1 submitted 11 October, 2017;
originally announced October 2017.
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Heavy strain conditions in colloidal core-shell quantum dots and their consequences on the vibrational properties from \emph{Ab initio} calculations
Authors:
Peng Han,
Gabriel Bester
Abstract:
We preform large-scale \emph{ab initio} density functional theory calculations to study the lattice strain and the vibrational properties of colloidal semiconductor core-shell nanoclusters with up to one thousand atoms (radii up to 15.6~Å). For all the group IV, III-V and II-VI semiconductors studied, we find that the atom positions of the shell atoms, seem unaffected by the core material. In part…
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We preform large-scale \emph{ab initio} density functional theory calculations to study the lattice strain and the vibrational properties of colloidal semiconductor core-shell nanoclusters with up to one thousand atoms (radii up to 15.6~Å). For all the group IV, III-V and II-VI semiconductors studied, we find that the atom positions of the shell atoms, seem unaffected by the core material. In particular, for group IV core-shell clusters the shell material remains unstrained, while the core adapts to the large lattice mismatch (compressive or tensile strain). For InAs-InP and CdSe-CdS, both the cores and the shells are compressively strained corresponding to pressures up to 20 GPa. We show that this compression, which contributes a large blue-shift of the vibrational frequencies, is counterbalanced, to some degree, by the undercoordination effect of the near-surface shell, which contributes a red-shift to the vibrational modes. These findings lead to a different interpretation of the frequency shifts of recent Raman experiments, while they confirm the speculated interface nature of the low-frequency shoulder of the high frequency Raman peak.
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Submitted 5 September, 2015;
originally announced September 2015.
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Supercoupling between heavy-hole and light-hole states in self-assembled quantum dots
Authors:
Jun-Wei Luo,
Gabriel Bester,
Alex Zunger
Abstract:
Spintronics, quantum computing and quantum communication science utilizing cubic semiconductors rely largely on the properties of the hole states, composed of light and heavy hole wavefunction components. The admixture of light-hole (LH) into ground hole state predominately by the heavy hole (HH) would induce unique features of LH in optical transitions, spin relaxation, and spin polarization. We…
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Spintronics, quantum computing and quantum communication science utilizing cubic semiconductors rely largely on the properties of the hole states, composed of light and heavy hole wavefunction components. The admixture of light-hole (LH) into ground hole state predominately by the heavy hole (HH) would induce unique features of LH in optical transitions, spin relaxation, and spin polarization. We point to an unexpected source of HH-LH mixing in quantum dots, arguing that in contrast with current models the mixing does not reflect the strain between the dot and its matrix and does not scale inversely with the energy splitting between the bulk HH and LH states. Instead, we show via atomistic pseudopotential calculations on a range of strained and unstrained dots of different symmetries that the HH-LH mixing is enabled by the presence in the QD of a dense ladder of intermediate states between the HH and LH states which amplifies and propagates this interaction and leads to "supercoupling" (analogous to super-exchange in magnetism). This explains a number of outstanding puzzles regarding the surprising large coupling seen in unstrained QD (GaAs/AlAs) of ideal shapes and the surprising fact that in strained QD (InAs/GaAs) the coupling is very strong despite the fact that the 12-fold increase in bulk HH-LH splitting overrides the ~4 fold enhancement of the coupling matrix element by strain in comparison with unstrained GaAs QDs.
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Submitted 22 November, 2014;
originally announced November 2014.
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Semiempirical pseudopotential approach for nitride-based nanostructures and {\it ab initio} based passivation of free surfaces
Authors:
Alejandro Molina-Sánchez,
Alberto García-Cristóbal,
Gabriel Bester
Abstract:
We present a semiempirical pseudopotential method based on screened atomic pseudopotentials and derived from \textit{ab initio} calculations. This approach is motivated by the demand for pseudopotentials able to address nanostructures, where \textit{ab initio} methods are both too costly and insufficiently accurate at the level of the local-density approximation, while mesoscopic effective-mass ap…
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We present a semiempirical pseudopotential method based on screened atomic pseudopotentials and derived from \textit{ab initio} calculations. This approach is motivated by the demand for pseudopotentials able to address nanostructures, where \textit{ab initio} methods are both too costly and insufficiently accurate at the level of the local-density approximation, while mesoscopic effective-mass approaches are inapplicable due to the small size of the structures along, at least, one dimension. In this work we improve the traditional pseudopotential method by a two-step process: First, we invert a set of self-consistently determined screened {\it ab initio} potentials in wurtzite GaN for a range of unit cell volumes, thus determining spherically-symmetric and structurally averaged atomic potentials. Second, we adjust the potentials to reproduce observed excitation energies. We find that the adjustment represents a reasonably small perturbation over the potential, so that the ensuing potential still reproduces the original wave functions, while the excitation energies are significantly improved. We furthermore deal with the passivation of the dangling bonds of free surfaces which is relevant for the study of nanowires and colloidal nanoparticles. We present a methodology to derive passivant pseudopotentials from {\it ab initio} calculations. We apply our pseudopotential approach to the exploration of the confinement effects on the electronic structure of GaN nanowires.
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Submitted 24 September, 2013;
originally announced September 2013.
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Vibron-vibron coupling from ab initio molecular dynamics simulations of a silicon cluster
Authors:
Peng Han,
Linas Vilciauskas,
Gabriel Bester
Abstract:
We study the temperature dependent dynamical processes of a Si10H16 cluster and obtain a blue shift of the Si-Si vibrational modes with transverse acoustic character and a red shift of the other vibrational modes with increasing temperature. We link this behavior to the bond length expansion and the varying sign of the Grueneisen parameter. We further present a computational approach able to extra…
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We study the temperature dependent dynamical processes of a Si10H16 cluster and obtain a blue shift of the Si-Si vibrational modes with transverse acoustic character and a red shift of the other vibrational modes with increasing temperature. We link this behavior to the bond length expansion and the varying sign of the Grueneisen parameter. We further present a computational approach able to extract the vibron-vibron coupling strength in clusters or molecules. Our approach is based on ab initio Born-Oppenheimer molecular dynamics and a projection formalism able to deliver the individual vibron occupation numbers. From the Fourier transform of the vibron energy autocorrelation function we obtain the coupling strength of each vibron to the most strongly coupled vibronic states. We find vibron-vibron coupling strength up to 2.5 THz with a moderate increase of about 5 % when increasing the temperature from 50 to 150 K.
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Submitted 10 April, 2013; v1 submitted 29 January, 2013;
originally announced January 2013.
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Semiconductor quantum dots with light-hole exciton ground state: fabrication and fine structure
Authors:
Y. H. Huo,
B. J. Witek,
S. Kumar,
R. Singh,
E. Zallo,
R. Grifone,
D. Kriegner,
R. Trotta,
N. Akopian,
J. Stangl,
V. Zwiller,
G. Bester,
A. Rastelli,
O. G. Schmidt
Abstract:
Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has dominant heavy-hole (HH) character. For this reason light-hole (LH) states have been largely neglected, despite the fact that may enable the realilza…
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Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has dominant heavy-hole (HH) character. For this reason light-hole (LH) states have been largely neglected, despite the fact that may enable the realilzation of coherent photon-to-spin converters or allow for faster spin manipulation compared to HH states. In this work, we use tensile strains larger than 0.3% to switch the ground state of excitons confined in high quality GaAs/AlGaAs QDs from the conventional HH- to LH-type. The LH-exciton fine structure is characterized by two in-plane-polarized lines and, ~400 micro-eV above them, by an additional line with pronounced out-of-plane oscillator strength, consistent with theoretical predictions based on atomistic empirical pseudopotential calculations and a simple mesoscopic model.
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Submitted 31 August, 2012;
originally announced August 2012.
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Atomic Effective Pseudopotentials for Semiconductors
Authors:
J. R. Cárdenas,
G. Bester
Abstract:
We derive an analytic connection between the screened self-consistent effective potential from density functional theory (DFT) and atomic effective pseudopotentials (AEPs). The motivation to derive AEPs is to address structures with thousands to hundred thousand atoms, as given in most nanostructures. The use of AEPs allows to bypass a self-consistent procedure and to address eigenstates around a…
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We derive an analytic connection between the screened self-consistent effective potential from density functional theory (DFT) and atomic effective pseudopotentials (AEPs). The motivation to derive AEPs is to address structures with thousands to hundred thousand atoms, as given in most nanostructures. The use of AEPs allows to bypass a self-consistent procedure and to address eigenstates around a certain region of the spectrum (e.g., around the band gap). The bulk AEP construction requires two simple DFT calculations of slightly deformed elongated cells. The ensuing AEPs are given on a fine reciprocal space grid, including the small reciprocal vector components, are free of parameters, and involve no fitting procedure. We further show how to connect the AEPs of different bulk materials, which is necessary to obtain accurate band offsets. We derive a total of 20 AEPs for III-V, II-VI and group IV semiconductors and demonstrate their accuracy and transferability by comparison to DFT calculations of strained bulk structures, quantum wells with varying thickness, and semiconductor alloys.
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Submitted 13 June, 2012;
originally announced June 2012.
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Effects of charged defects on the electronic and optical properties of self-assembled quantum dots
Authors:
Ranber Singh,
Gabriel Bester
Abstract:
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spe…
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We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected, while significant changes are observed for strain-free quantum dots.
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Submitted 7 March, 2012;
originally announced March 2012.
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Confinement effects on the vibrational properties of III-V and II-VI nanoclusters
Authors:
Peng Han,
Gabriel Bester
Abstract:
We present a first-principles study of the confinement effects on the vibrational properties of thousand atoms (radii up to 16.2 Å) colloidal III-V and II-VI nanoclusters. We describe how the molecular-type vibrations, such as surface--optical, surface--acoustic and coherent acoustic modes, coexist and interact with bulk-type vibrations, such as longitudinal and transverse acoustic and optical mod…
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We present a first-principles study of the confinement effects on the vibrational properties of thousand atoms (radii up to 16.2 Å) colloidal III-V and II-VI nanoclusters. We describe how the molecular-type vibrations, such as surface--optical, surface--acoustic and coherent acoustic modes, coexist and interact with bulk-type vibrations, such as longitudinal and transverse acoustic and optical modes. We link vibrational properties to structural changes induced by the surface and highlight the qualitative difference between III-Vs and II-VIs. We describe the size dependence of the vibrations and find good agreement for Raman shifts and for the frequency of coherent acoustic modes with experiments.
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Submitted 8 February, 2012;
originally announced February 2012.
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Interatomic potentials for the vibrational properties of III-V semiconductor nanostructures
Authors:
Peng Han,
Gabriel Bester
Abstract:
We derive interatomic potentials for zinc blende InAs, InP, GaAs and GaP semiconductors with possible applications in the realm of nanostructures. The potentials include bond stretching interaction between the nearest and next-nearest neighbors, a three body term and a long-range Coulomb interaction. The optimized potential parameters are obtained by (i) fitting to bulk phonon dispersions and elas…
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We derive interatomic potentials for zinc blende InAs, InP, GaAs and GaP semiconductors with possible applications in the realm of nanostructures. The potentials include bond stretching interaction between the nearest and next-nearest neighbors, a three body term and a long-range Coulomb interaction. The optimized potential parameters are obtained by (i) fitting to bulk phonon dispersions and elastic properties and (ii) constraining the parameter space to deliver well behaved potentials for the structural relaxation and vibrational properties of nanostructure clusters. The targets are thereby calculated by density functional theory for clusters of up to 633 atoms. We illustrate the new capability by the calculation Kleinman and Grüneisen parameters and of the vibrational properties of nanostructures with 3 to 5.5 nm diameter.
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Submitted 1 July, 2011;
originally announced July 2011.
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Charged excitons and biexcitons in laterally coupled InGaAs quantum dots
Authors:
Jie Peng,
Gabriel Bester
Abstract:
We present results of atomistic empirical pseudopotential calculations and configuration interaction for excitons, positive and negative trions (X\pm), positive and negative quartons (X2\pm) and biexcitons. The structure investigated are laterally aligned InGaAs quantum dot molecules embedded in GaAs under a lateral electric field. The rather simple energetic of excitons becomes more complex in th…
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We present results of atomistic empirical pseudopotential calculations and configuration interaction for excitons, positive and negative trions (X\pm), positive and negative quartons (X2\pm) and biexcitons. The structure investigated are laterally aligned InGaAs quantum dot molecules embedded in GaAs under a lateral electric field. The rather simple energetic of excitons becomes more complex in the case of charged quasiparticles but remains tractable. The negative trion spectrum shows four anticrossings in the presently available range of fields while the positive trion shows two. The magnitude of the anticrossings reveals many-body effects in the carrier tunneling process that should be experimentally accessible.
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Submitted 21 December, 2010;
originally announced December 2010.
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Influence of the charge carrier tunneling processes on the recombination dynamics in single lateral quantum dot molecules
Authors:
C. Hermannstädter,
G. J. Beirne,
M. Witzany,
M. Heldmaier,
J. Peng,
G. Bester,
L. Wang,
A. Rastelli,
O. G. Schmidt,
P. Michler
Abstract:
We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay behavior which is strongly influenced by the tuning electric field and inter-molecular Coulomb energies. A rate equation model is developed to gain mor…
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We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay behavior which is strongly influenced by the tuning electric field and inter-molecular Coulomb energies. A rate equation model is developed to gain more insight into the charge transfer and tunneling mechanisms. Non-resonant (phonon-mediated) electron tunneling which changes the molecular exciton character from direct to indirect, and vice versa, is found to be the dominant tunable decay mechanism of excitons besides radiative recombination.
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Submitted 6 November, 2009;
originally announced November 2009.
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Heterogeneous confinement in laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric fields
Authors:
Jie Peng,
Claus Hermannstädter,
Marcus Witzany,
Matthias Heldmaier,
Lijuan Wang,
Suwit Kiravittaya,
Armando Rastelli,
Oliver G. Schmidt,
Peter Michler,
Gabriel Bester
Abstract:
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes discern two well separated dots. Through a combination of predictive atomistic modeling, detailed morphology studies, and single object micro-photoluminescence measur…
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We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes discern two well separated dots. Through a combination of predictive atomistic modeling, detailed morphology studies, and single object micro-photoluminescence measurements, we show that this peculiar confinement results in an unusual heterogeneous behavior of electrons and holes with profound consequences on optical properties.
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Submitted 9 December, 2010; v1 submitted 27 October, 2009;
originally announced October 2009.
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Prediction of large linear-in-k spin splitting for holes in the 2D GaAs/AlAs system
Authors:
Jun-Wei Luo,
Athanasios N. Chantis,
Mark van Schilfgaarde,
Gabriel Bester,
Alex Zunger
Abstract:
The spin-orbit interaction generally leads to spin splitting (SS) of electron and hole energy states in solids, a splitting that is characterized by a scaling with the wavevector $\bf k$. Whereas for {\it 3D bulk zincblende} solids the electron (heavy hole) SS exhibits a cubic (linear) scaling with $k$, in {\it 2D quantum-wells} the electron (heavy hole) SS is currently believed to have a mostly…
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The spin-orbit interaction generally leads to spin splitting (SS) of electron and hole energy states in solids, a splitting that is characterized by a scaling with the wavevector $\bf k$. Whereas for {\it 3D bulk zincblende} solids the electron (heavy hole) SS exhibits a cubic (linear) scaling with $k$, in {\it 2D quantum-wells} the electron (heavy hole) SS is currently believed to have a mostly linear (cubic) scaling. Such expectations are based on using a small 3D envelope function basis set to describe 2D physics. By treating instead the 2D system explicitly in a multi-band many-body approach we discover a large linear scaling of hole states in 2D. This scaling emerges from hole bands coupling that would be unsuspected by the standard model that judges coupling by energy proximity. This discovery of a linear Dresselhaus k-scaling for holes in 2D implies a different understanding of hole-physics in low-dimensions.
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Submitted 1 October, 2009; v1 submitted 30 January, 2009;
originally announced January 2009.
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Experimental imaging and atomistic modeling of electron and hole quasiparticle wave functions in InAs/GaAs quantum dots
Authors:
G. Bester,
D. Reuter,
L. He,
A. Zunger,
P. Kailuweit,
A. D. Wieck,
U. Zeitler,
J. C. Maan,
O. Wibbelhoff,
A. Lorke
Abstract:
We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) pie…
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We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequence of holes that violates the Aufbau principle.
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Submitted 12 July, 2007; v1 submitted 12 July, 2007;
originally announced July 2007.
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Calculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots
Authors:
Lixin He,
Gabriel Bester,
Zhiqiang Su,
Alex Zunger
Abstract:
The near-field scanning optical microscopy images of excitonic wavefunctions in self-assembled InAs/GaAs quantum dots are calculated using an empirical pseudopotential method, followed by the configuration interaction (CI) treatment of many-particle effects. We show the wavefunctions of neutral exciton $X^0$ of different polarizations, and compare them to those of the biexciton $XX$ and the char…
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The near-field scanning optical microscopy images of excitonic wavefunctions in self-assembled InAs/GaAs quantum dots are calculated using an empirical pseudopotential method, followed by the configuration interaction (CI) treatment of many-particle effects. We show the wavefunctions of neutral exciton $X^0$ of different polarizations, and compare them to those of the biexciton $XX$ and the charged excitons $X^+$ and $X^-$. We further show that the exciton $X(P_h \to S_e)$ transition which is forbidden in the far-field photoluminescence has comparable intensities to that of $X(S_h \to S_e)$ transition in the near-field photoluminescence .
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Submitted 26 March, 2007;
originally announced March 2007.
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Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots
Authors:
Gustavo A. Narvaez,
Gabriel Bester,
Alberto Franceschetti,
Alex Zunger
Abstract:
Electron-hole exchange interactions split the exciton ground state into "dark" and "bright" states. The dynamics of those states depends on the internal relaxation time between bright and dark states (spin-flip time), and on the radiative recombination time of the bright states. On the other hand, the calculated values of these recombination times depend not only on the treatment of correlation…
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Electron-hole exchange interactions split the exciton ground state into "dark" and "bright" states. The dynamics of those states depends on the internal relaxation time between bright and dark states (spin-flip time), and on the radiative recombination time of the bright states. On the other hand, the calculated values of these recombination times depend not only on the treatment of correlation effects, but also on the accuracy of the electron and hole wavefunctions. We calculate the radiative decay rates for monoexcitons and biexcitons in (In,As)Ga/GaAs self-assembled and colloidal CdSe quantum dots from atomistic correlated wave functions. We show how the radiative decay time tau_R(X^0) of the monoexciton depends on the spin-flip relaxation time between bright and dark states. In contrast, a biexciton has no bright-dark splitting, so the decay time of the biexciton tau_R(XX^0) is insensitive to this spin-flip time. This results in ratios $τ_R(X^0)/τ_R(XX^0)$ of 4 in the case of fast spin flip, and a ratio of 2 in the case of slow spin flip. For (In,Ga)As/GaAs, we compare our results with the model calculation of Wimmer et al. [M. Wimmer et al., Phys. Rev. B 73, 165305 (2006)]. When the same spin-flip rates are assumed, our predicted tau_R(X^0)/tau_R(XX^0) agrees with that of Wimmer et al., suggesting that our treatment of correlations is adequate to predict the ratio of monoexciton and biexciton radiative lifetimes. Our results agree well with experiment on self-assembled quantum dots when assuming slow spin flip. Conversely, for colloidal dots the agreement with experiment is best for fast spin flip.
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Submitted 27 September, 2006; v1 submitted 6 July, 2006;
originally announced July 2006.
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Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P -> S Auger relaxation of electrons
Authors:
Gustavo A. Narvaez,
Gabriel Bester,
Alex Zunger
Abstract:
We calculate the P-shell--to-S-shell decay lifetime τ(P->S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of τ(P->S)~1-7 ps for dots of different sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes τ(P->S) compare w…
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We calculate the P-shell--to-S-shell decay lifetime τ(P->S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of τ(P->S)~1-7 ps for dots of different sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes τ(P->S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as holes are present there is no need for an alternative polaron mechanism.
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Submitted 2 August, 2006; v1 submitted 28 April, 2006;
originally announced May 2006.
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Importance of second-order piezoelectric effects in zincblende semiconductors
Authors:
Gabriel Bester,
Xifan Wu,
David Vanderbilt,
Alex Zunger
Abstract:
We show that the piezoelectric effect that describes the emergence of an electric field in response to a crystal deformation in III-V semiconductors such as GaAs and InAs has strong contributions from second-order effects that have been neglected so far. We calculate the second-order piezoelectric tensors using density functional theory and obtain the piezoelectric field for [111]-oriented In…
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We show that the piezoelectric effect that describes the emergence of an electric field in response to a crystal deformation in III-V semiconductors such as GaAs and InAs has strong contributions from second-order effects that have been neglected so far. We calculate the second-order piezoelectric tensors using density functional theory and obtain the piezoelectric field for [111]-oriented In$_x$Ga$_{1-x}$As quantum wells of realistic dimensions and concentration $x$. We find that the linear and the quadratic piezoelectric coefficients have the opposite effect on the field, and for large strains the quadratic terms even dominate. Thus, the piezoelectric field turns out to be a rare example of a physical quantity for which the first- and second-order contributions are of comparable magnitude.
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Submitted 26 April, 2006;
originally announced April 2006.
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Excitons, biexcitons and trions in self-assembled (In,Ga)As/GaAs quantum dots: Recombination energies, polarization and radiative lifetimes versus dot height
Authors:
Gustavo A. Narvaez,
Gabriel Bester,
Alex Zunger
Abstract:
We calculate the height dependence of recombination energies, polarization and radiative lifetimes of the optical transitions of various excitonic complexes: neutral excitons (X^0), negatively- (X^-) and positively-charged (X^+) trions, and biexcitons (XX^0) in lens-shaped, self-assembled In_0.6Ga_0.4As/GaAs quantum dots. By using an atomistic pseudopotential method combined with the configurati…
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We calculate the height dependence of recombination energies, polarization and radiative lifetimes of the optical transitions of various excitonic complexes: neutral excitons (X^0), negatively- (X^-) and positively-charged (X^+) trions, and biexcitons (XX^0) in lens-shaped, self-assembled In_0.6Ga_0.4As/GaAs quantum dots. By using an atomistic pseudopotential method combined with the configuration-interaction method, we predict the following. (i) The recombination energy of the lowest transition of X^- blue-shifts as height increases, whereas that of X^+ red-shifts. Remarkably, the recombination of XX^0 shows a red-shift at small heights, reaches a maximum shift, and then blue-shifts for taller dots. (ii) Changes in dot height lead to a bound-to-unbound crossover for X^-, X^+ and XX^0. (iii) When considering the [110] and [1\bar{1}0] directions, the lowest transitions of X^0 and XX^0 manifest [110] vs [1\bar{1}0] in-plane polarization anisotropy that switches sign as a function of height as well as alloy randomness. $X^-$ and $X^+$ show transitions with negligible polarization anisotropy regardless of height. (iv) The ground state of X^0 is split in a low-energy pair that is forbidden (dark) and a high-energy pair that is allowed; thus, at T=0K the radiative lifetime τ(X^0) is long (~ ms) due to the dark exciton. On the other hand, at T=10K, τ(X^0) decreases moderately as height increases and its magnitude ranges from 2-3ns. The ground state of X^- and X^+, and that of XX^0 is allowed (bright); so, τ(X^-), τ(X^+) and τ(XX^0) are fast (~ ns) even at T=0K. These radiative lifetimes depend weakly on height. In addition, τ(X^-) ~ τ(X^+) ~1.1ns, while τ(XX^0)~0.5ns$. We compare our predictions with available spectroscopic data.
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Submitted 15 December, 2005; v1 submitted 27 June, 2005;
originally announced June 2005.
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Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes
Authors:
Lixin He,
Gabriel Bester,
Alex Zunger
Abstract:
We study the orbital and spin configurations of up to six electrons or holes charged into self-assembled InAs/GaAs quantum dots via single-particle pseudopotential and many-particle configuration interaction method. We find that while the charging of {\it electrons} follows both Hund's rule and the Aufbau principle, the charging of {\it holes} follows a non-trivial charging pattern which violate…
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We study the orbital and spin configurations of up to six electrons or holes charged into self-assembled InAs/GaAs quantum dots via single-particle pseudopotential and many-particle configuration interaction method. We find that while the charging of {\it electrons} follows both Hund's rule and the Aufbau principle, the charging of {\it holes} follows a non-trivial charging pattern which violates both the Aufbau principle and Hund's rule, and is robust against the details of the quantum dot size. The predicted hole charging sequence offers a new interpretation of recent charging experiments.
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Submitted 12 May, 2005;
originally announced May 2005.
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Pressure effects on neutral and charged excitons in self-assembled InGaAs/GaAs quantum dots
Authors:
Gustavo A. Narvaez,
Gabriel Bester,
Alex Zunger
Abstract:
By combining an atomistic pseudopotential method with the configuration interaction approach, we predict the pressure dependence of the binding energies of neutral and charged excitons: $X^0$ (neutral monoexciton), $X^{-}$ and $X^{+}$ (charged trions), and $XX^0$ (biexciton) in lens-shaped, self-assembled In$_{0.6}$Ga$_{0.4}$As/GaAs quantum dots. We predict that (i) with applied pressure the bin…
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By combining an atomistic pseudopotential method with the configuration interaction approach, we predict the pressure dependence of the binding energies of neutral and charged excitons: $X^0$ (neutral monoexciton), $X^{-}$ and $X^{+}$ (charged trions), and $XX^0$ (biexciton) in lens-shaped, self-assembled In$_{0.6}$Ga$_{0.4}$As/GaAs quantum dots. We predict that (i) with applied pressure the binding energy of $X^0$ and $X^+$ increases and that of $X^-$ decreases, whereas the binding energy of $XX^0$ is nearly pressure independent. (ii) Correlations have a small effect in the binding energy of $X^0$, whereas they largely determine the binding energy of $X^-$, $X^+$ and $XX^0$. (iii) Correlations depend weakly on pressure; thus, the pressure dependence of the binding energies can be understood within the Hartree-Fock approximation and it is controlled by the pressure dependence of the direct Coulomb integrals $J$. Our results in (i) can thus be explained by noting that holes are more localized than electrons, so the Coulomb energies obey $J^{(hh)}>J^{(eh)}>J^{(ee)}$.
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Submitted 31 March, 2005;
originally announced April 2005.
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Singlet-triplet splitting, correlation and entanglement of two electrons in quantum dot molecules
Authors:
Lixin He,
Gabriel Bester,
Alex Zunger
Abstract:
Starting with an accurate pseudopotential description of the single-particle states, and following by configuration-interaction treatment of correlated electrons in vertically coupled, self-assembled InAs/GaAs quantum dot-molecules, we show how simpler, popularly-practiced approximations, depict the basic physical characteristics including the singlet-triplet splitting, degree of entanglement (D…
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Starting with an accurate pseudopotential description of the single-particle states, and following by configuration-interaction treatment of correlated electrons in vertically coupled, self-assembled InAs/GaAs quantum dot-molecules, we show how simpler, popularly-practiced approximations, depict the basic physical characteristics including the singlet-triplet splitting, degree of entanglement (DOE) and correlation. The mean-field-like single-configuration approaches such as Hartree-Fock and local spin density, lacking correlation, incorrectly identify the ground state symmetry and give inaccurate values for the singlet-triplet splitting and the DOE. The Hubbard model gives qualitatively correct results for the ground state symmetry and singlet-triplet splitting, but produces significant errors in the DOE because it ignores the fact that the strain is asymmetric even if the dots within a molecule are identical. Finally, the Heisenberg model gives qualitatively correct ground state symmetry and singlet-triplet splitting only for rather large inter-dot separations, but it greatly overestimates the DOE as a consequence of ignoring the electron double occupancy effect.
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Submitted 16 November, 2005; v1 submitted 18 March, 2005;
originally announced March 2005.
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Dependence of the electronic structure of self-assembled InGaAs/GaAs quantum dots on height and composition
Authors:
Gustavo A. Narvaez,
Gabriel Bester,
Alex Zunger
Abstract:
While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty in comparing measured electronic and spectroscopic properties with calculated ones. Since simplified theoretical models (effective mass, k.p, parabolic model…
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While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty in comparing measured electronic and spectroscopic properties with calculated ones. Since simplified theoretical models (effective mass, k.p, parabolic models) do not fully convey the effects of shape, size and composition on the electronic and spectroscopic properties, we offer to bridge the gap by providing accurately calculated results as a function of the dot height and composition. Prominent results are the following. (i) Regardless of height and composition, the electron levels form shells of nearly degenerate states. In contrast, the hole levels form shells only in flat dots and near the highest hole level (HOMO). (ii) In alloy dots, the electrons' ``s-p'' splitting depends weakly on height, while the ``p-p'' splitting depends non-monotonically. In non-alloyed InAs/GaAs dots, both these splittings depend weakly on height. For holes in alloy dots, the ``s-p'' splitting decreases with increasing height, whereas the ``p-p'' splitting remains nearly unchaged. Shallow, non-alloyed dots have a ``s-p'' splitting of nearly the same magnitude, whereas the ``p-p'' splitting is larger. (iii) As height increases, the ``s'' and ``p'' character of the wavefunction of the HOMO becomes mixed, and so does the heavy- and light-hole character. (iv) In alloy dots, low-lying hole states are localized inside the dot. Remarkably, in non-alloyed InAs/GaAs dots these states become localized at the interface as height increases. This localization is driven by the biaxial strain present in the nanostructure.
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Submitted 16 February, 2005;
originally announced February 2005.
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Electric field control and optical signature of entanglement in quantum dot molecules
Authors:
Gabriel Bester,
Alex Zunger
Abstract:
The degree of entanglement of an electron with a hole in a vertically coupled self-assembled dot molecule is shown to be tunable by an external electric field. Using atomistic pseudopotential calculations followed by a configuration interaction many-body treatment of correlations, we calculate the electronic states, degree of entanglement and optical absorption. We offer a novel way to spectrosc…
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The degree of entanglement of an electron with a hole in a vertically coupled self-assembled dot molecule is shown to be tunable by an external electric field. Using atomistic pseudopotential calculations followed by a configuration interaction many-body treatment of correlations, we calculate the electronic states, degree of entanglement and optical absorption. We offer a novel way to spectroscopically detect the magnitude of electric field needed to maximize the entanglement.
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Submitted 11 May, 2005; v1 submitted 7 February, 2005;
originally announced February 2005.
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Asymmetry in self-assembled quantum dot-molecules made of identical InAs/GaAs quantum dots
Authors:
Lixin He,
Gabriel Bester,
Alex Zunger
Abstract:
We show that a diatomic dot molecule made of two identical, vertically stacked, strained InAs/GaAs self-assembled dots exhibits an asymmetry in its single-particle and may-particle wavefunctions. The single-particle wave function is asymmetric due to the inhomogeneous strain, while the asymmetry of the many-particle wavefunctions is caused by the correlation induced localization: the lowest sing…
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We show that a diatomic dot molecule made of two identical, vertically stacked, strained InAs/GaAs self-assembled dots exhibits an asymmetry in its single-particle and may-particle wavefunctions. The single-particle wave function is asymmetric due to the inhomogeneous strain, while the asymmetry of the many-particle wavefunctions is caused by the correlation induced localization: the lowest singlet $^1Σ_g$ and triplet $^3Σ$ states show that the two electrons are each localized on different dots within the molecule, for the next singlet states $^1Σ_u$ both electrons are localized on the same (bottom) dot for interdot separation $d>$ 8 nm. The singlet-triplet splitting is found to be $\sim 0.1$ meV at inter-dot separation $d$=9 nm and as large as 100 meV for $d$=4 nm, orders of magnitude larger than the few meV found in the large (50 - 100 nm) electrostatically confined dots.
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Submitted 28 March, 2005; v1 submitted 7 December, 2004;
originally announced December 2004.
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Theory of excitonic spectra and entanglement engineering in dot molecules
Authors:
Gabriel Bester,
J. Shumway,
Alex Zunger
Abstract:
We present results of correlated pseudopotential calculations of an exciton in a pair of vertically stacked InGaAs/GaAs dots. Competing effects of strain, geometry, and band mixing lead to many unexpected features missing in contemporary models. The first four excitonic states are all optically active at small interdot separation, due to the broken symmetry of the single-particle states. We quan…
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We present results of correlated pseudopotential calculations of an exciton in a pair of vertically stacked InGaAs/GaAs dots. Competing effects of strain, geometry, and band mixing lead to many unexpected features missing in contemporary models. The first four excitonic states are all optically active at small interdot separation, due to the broken symmetry of the single-particle states. We quantify the degree of entanglement of the exciton wavefunctions and show its sensitivity to interdot separation. We suggest ways to spectroscopically identify and maximize the entanglement of exciton states.
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Submitted 29 June, 2004;
originally announced June 2004.
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Metal-nonmetal transition and excitonic ground state in InAs/InSb quantum dots
Authors:
Lixin He,
Gabriel Bester,
Alex Zunger
Abstract:
Using atomistic pseudopotential and configuration-interaction many-body calculations, we predict a metal-nonmetal transition and an excitonic ground state in the InAs/InSb quantum dot (QD) system. For large dots, the conduction band minimum of the InAs dot lies below the valence band maximum of the InSb matrix. Due to quantum confinement, at a critical size calculated here for various shapes, th…
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Using atomistic pseudopotential and configuration-interaction many-body calculations, we predict a metal-nonmetal transition and an excitonic ground state in the InAs/InSb quantum dot (QD) system. For large dots, the conduction band minimum of the InAs dot lies below the valence band maximum of the InSb matrix. Due to quantum confinement, at a critical size calculated here for various shapes, the single-particle gap $E_g$ becomes very small. Strong electron-hole correlation effects are induced by the spatial proximity of the electron and hole wavefunctions, and by the lack of strong (exciton unbinding) screening, afforded by the existence of fully discrete 0D confined energy levels. These correlation effects overcome $E_g$, leading to the formation of a bi-excitonic ground state (two electrons in InAs and two holes in InSb) being energetically more favorable (by $\sim$ 15 meV) than the state without excitons. We discuss the excitonic phase transition on QD arrays in the low dot density limit.
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Submitted 6 May, 2004;
originally announced May 2004.
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Ab-initio investigation of the covalent bond energies in the metallic covalent superconductor MgB2 and in AlB2
Authors:
Gabriel Bester,
Manfred Fahnle
Abstract:
The contributions of the covalent bond energies of various atom pairs to the cohesive energy of MgB2 and AlB2 are analysed with a variant of our recently developed energy-partitioning scheme for the density-functional total energy. The covalent bond energies are strongest for the intralayer B-B pairs. In contrast to the general belief, there is also a considerable covalent bonding between the la…
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The contributions of the covalent bond energies of various atom pairs to the cohesive energy of MgB2 and AlB2 are analysed with a variant of our recently developed energy-partitioning scheme for the density-functional total energy. The covalent bond energies are strongest for the intralayer B-B pairs. In contrast to the general belief, there is also a considerable covalent bonding between the layers, mediated by the metal atom. The bond energies between the various atom pairs are analysed in terms of orbital- and energy-resolved contributions.
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Submitted 20 June, 2001; v1 submitted 4 May, 2001;
originally announced May 2001.
