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Controlling the Magnetic Properties of the van der Waals Multiferroic Crystals Co$_{1-x}$Ni$_{x}$I$_2$
Authors:
Anastasiia Lukovkina,
Sara A. Lopez-Paz,
Celine Besnard,
Laure Guenee,
Fabian O. von Rohr,
Enrico Giannini
Abstract:
The structurally related compounds NiI$_2$ and CoI$_2$ are multiferroic van der Waals materials, in which helimagnetic orders exist simultaneously with electric polarization. Here, we report on the evolution of the crystal structure and of the magnetic properties across the solid solution Co$_{1-x}$Ni$_{x}$I$_2$. We have successfully grown crystals of the whole range of the solid solution, i.e.…
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The structurally related compounds NiI$_2$ and CoI$_2$ are multiferroic van der Waals materials, in which helimagnetic orders exist simultaneously with electric polarization. Here, we report on the evolution of the crystal structure and of the magnetic properties across the solid solution Co$_{1-x}$Ni$_{x}$I$_2$. We have successfully grown crystals of the whole range of the solid solution, i.e. $x = 0-1$, by employing the self-selecting vapor growth (SSVG) technique and by carefully tuning the synthesis conditions according to the chemical composition. Our structural investigations show that the crystal symmetry changes from $P\bar{3}m1$ to $R\bar{3}m$ when Ni substitutes for Co beyond $x = 0.2$. Both the lattice parameters and magnetic properties evolve continuously and smoothly from one end member to the other, showing that they can be finely tuned by the chemical composition. We also observe that the Ni substitution degree in the solid solution affects the metamagnetic transition typical for CoI$_2$ at high magnetic fields. In particular, we find the existence of the metamagnetic transition similar to that for CoI$_2$ in the NiI$_2$ structure. Based on magnetic measurements we construct the phase diagram of the Co$_{1-x}$Ni$_{x}$I$_2$ system. Controlling the magnetic properties by the chemical composition may open new pathways for the fabrication of electronic devices made of two-dimensional (2D) flakes of multiferroic van der Waals materials.
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Submitted 13 June, 2024;
originally announced June 2024.
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Pressure-induced structural transitions triggering dimensional crossover in lithium purple bronze Li0.9M6O17
Authors:
M. K. Tran,
A. Akrap,
J. Levallois,
J. Teyssier,
P. Schouwink,
C. Besnard,
P. Lerch,
J. W. Allen,
M. Greenblatt,
D. van der Marel
Abstract:
At ambient pressure, lithium molybdenum purple bronze (Li0.9Mo6O17) is a quasi-one dimensional solid in which the anisotropic crystal structure and the linear dispersion of the underlying bands produced by electronic correlations possibly bring about a rare experimental realization of Tomomaga-Luttinger liquid physics. It is also the sole member of the broader purple molybdenum bronzes family wher…
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At ambient pressure, lithium molybdenum purple bronze (Li0.9Mo6O17) is a quasi-one dimensional solid in which the anisotropic crystal structure and the linear dispersion of the underlying bands produced by electronic correlations possibly bring about a rare experimental realization of Tomomaga-Luttinger liquid physics. It is also the sole member of the broader purple molybdenum bronzes family where a Peierls instability has not been identified at low temperatures. The present study reports a pressure-induced series of phase transitions between 0 and 12 GPa. These transitions are strongly reflected in infrared spectroscopy, Raman spectroscopy, and x-ray diffraction. The most dramatic effect seen in optical conductivity is the metallization of the c-axis, concomitant to the decrease of conductivity along the b-axis. This indicates that high pressure drives the material away from its quasi-one dimensional behavior at ambient pressure. While the first pressure-induced structure of the series is resolved, the identification of the underlying mechanisms driving the dimensional change in the physics remains a challenge.
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Submitted 28 May, 2021;
originally announced May 2021.
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Bulk and surface electronic structure of the dual-topology semimetal Pt2HgSe3
Authors:
I. Cucchi,
A. Marrazzo,
E. Cappelli,
S. Ricco,
F. Y. Bruno,
S. Lisi,
M. Hoesch,
T. K. Kim,
C. Cacho,
C. Besnard,
E. Giannini,
N. Marzari,
M. Gibertini,
F. Baumberger,
A. Tamai
Abstract:
We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological and trivial areas. In the non-trivial $k$-space range we find surface states with multiple saddle-points in the dispersion resulting in two van Hove s…
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We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological and trivial areas. In the non-trivial $k$-space range we find surface states with multiple saddle-points in the dispersion resulting in two van Hove singularities in the surface density of states. Based on density functional theory calculations, we identify these surface states as signatures of a topological crystalline state which coexists with a weak topological phase.
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Submitted 11 September, 2019;
originally announced September 2019.
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In-situ strain-tuning of the metal-insulator-transition of Ca$_{2}$RuO$_{4}$ in angle-resolved photoemission experiments
Authors:
S. Riccò,
M. Kim,
A. Tamai,
S. McKeown Walker,
F. Y. Bruno,
I. Cucchi,
E. Cappelli,
C. Besnard,
T. K. Kim,
P. Dudin,
M. Hoesch,
M. Gutmann,
A. Georges,
R. S. Perry,
F. Baumberger
Abstract:
We report the evolution of the $k$-space electronic structure of lightly doped bulk Ca$_{2}$RuO$_{4}$ with uniaxial strain. Using ultrathin plate-like crystals, we achieve strain levels up to $-4.1\%$, sufficient to suppress the Mott phase and access the previously unexplored metallic state at low temperature. Angle-resolved photoemission experiments performed while tuning the uniaxial strain reve…
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We report the evolution of the $k$-space electronic structure of lightly doped bulk Ca$_{2}$RuO$_{4}$ with uniaxial strain. Using ultrathin plate-like crystals, we achieve strain levels up to $-4.1\%$, sufficient to suppress the Mott phase and access the previously unexplored metallic state at low temperature. Angle-resolved photoemission experiments performed while tuning the uniaxial strain reveal that metallicity emerges from a marked redistribution of charge within the Ru $t_{2g}$ shell, accompanied by a sudden collapse of the spectral weight in the lower Hubbard band and the emergence of a well defined Fermi surface which is devoid of pseudogaps. Our results highlight the profound roles of lattice energetics and of the multiorbital nature of Ca$_{2}$RuO$_{4}$ in this archetypal Mott transition and open new perspectives for spectroscopic measurements.
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Submitted 24 October, 2018; v1 submitted 1 March, 2018;
originally announced March 2018.
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High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors
Authors:
Céline Barreteau,
Baptiste Michon,
Céline Besnard,
Enrico Giannini
Abstract:
Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of Si…
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Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I$_{2}$ as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hop** conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications.
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Submitted 7 March, 2016;
originally announced March 2016.
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Large Negative Thermal Expansion in Pentacene due to Steric Hindrance
Authors:
S. Haas,
B. Batlogg,
C. Besnard,
M. Schiltz,
C. Kloc,
T. Siegrist
Abstract:
The uniaxial negative thermal expansion in pentacene crystals along $a$ is a particularity in the series of the oligoacenes, and exeptionally large for a crystalline solid. Full x-ray structure analysis from 120 K to 413 K reveals that the dominant thermal motion is a libration of the rigid molecules about their long axes, modifying the intermolecular angle which describes the herringbone packin…
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The uniaxial negative thermal expansion in pentacene crystals along $a$ is a particularity in the series of the oligoacenes, and exeptionally large for a crystalline solid. Full x-ray structure analysis from 120 K to 413 K reveals that the dominant thermal motion is a libration of the rigid molecules about their long axes, modifying the intermolecular angle which describes the herringbone packing within the layers. This herringbone angle increases with temperature (by 0.3 -- 0.6$^{\circ}$ per 100 K), and causes an anisotropic rearrangement of the molecules within the layers, i.e. an expansion in the $b$ direction, and a distinct contraction along $a$. Additionally, a larger herringbone angle improves the cofacial overlap between adjacent, parallel molecules, and thus enhances the attractive van der Waals forces.
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Submitted 3 July, 2007;
originally announced July 2007.
