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Showing 1–3 of 3 results for author: Besley, E

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  1. Triplet excitation and electroluminescence from a supramolecular monolayer embedded in a boron nitride tunnel barrier

    Authors: Simon A. Svatek, James Kerfoot, Alex Summerfield, Anton S. Nizovtsev, Vladimir V. Korolkov, Takashi Taniguchi, Kenji Watanabe, Elisa Antolín, Elena Besley, Peter H. Beton

    Abstract: We show that ordered monolayers of organic molecules stabilized by hydrogen bonding on the surface of exfoliated few-layer hexagonal boron nitride (hBN) flakes may be incorporated into van der Waals heterostructures with integral few-layer graphene contacts forming a molecular/2D hybrid tunneling diode. Electrons can tunnel from through the hBN/molecular barrier under an applied voltage VSD and we… ▽ More

    Submitted 11 December, 2019; v1 submitted 18 September, 2019; originally announced September 2019.

  2. arXiv:1805.11346  [pdf

    cond-mat.mtrl-sci

    Substrate-Induced Shifts and Screening in the Fluorescence Spectra of Supramolecular Adsorbed Organic Monolayers

    Authors: James Kerfoot, Vladimir V. Korolkov, Anton S. Nizovtsev, Ryan Jones, Takashi Taniguchi, Kenji Watanabe, Igor Lesanovsky, Bea Olmos, Nicholas A. Besley, Elena Besley, Peter H. Beton

    Abstract: We have investigated the influence of the substrate on the fluorescence of adsorbed organic molecules. Monolayer films of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-diimide (PTCDI), a supramolecular network formed from PTCDI and melamine, and perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA) have been deposited on hexagonal boron nitride (hBN). The principal peaks in the fluorescence… ▽ More

    Submitted 29 May, 2018; originally announced May 2018.

    Journal ref: J.Chem.Phys. 149 054701 (2018)

  3. arXiv:1802.04660  [pdf, other

    cond-mat.mtrl-sci

    Implanting germanium into graphene

    Authors: Mukesh Tripathi, Alexander Markevich, Roman Böttger, Stefan Facsko, Elena Besley, Jani Kotakoski, Toma Susi

    Abstract: Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties. Direct substitutions have thus far been limited to incidental Si impurities and P, N and B dopants introduced using low-energy ion implantation. We present here the heaviest impurity to date, namely $^{74}$Ge$^+$ ions implanted into monolayer graphene. Although sample conta… ▽ More

    Submitted 13 February, 2018; originally announced February 2018.

    Comments: 20 pages, 5 figures

    Journal ref: ACS Nano 12, 4641-4647 (2018)