Magnetic Resonant Mode in the Single-Layer High Temperature Superconductor Tl$_2$Ba$_2$Cu$_{6+δ}$
Authors:
H. He,
P. Bourges,
Y. Sidis,
C. Ulrich,
L. P. Regnault,
S. Pailhes,
N. S. Berzigiarova,
N. N. Kolesnikov,
B. Keimer
Abstract:
An unusual spin excitation mode observed by neutron scattering has inspired numerous theoretical studies of the interplay between charged quasiparticles and collective spin excitations in the copper oxide high temperature superconductors. The mode has thus far only been observed in materials with crystal structures consisting of copper oxide bilayers, and it is notably absent in the single-layer…
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An unusual spin excitation mode observed by neutron scattering has inspired numerous theoretical studies of the interplay between charged quasiparticles and collective spin excitations in the copper oxide high temperature superconductors. The mode has thus far only been observed in materials with crystal structures consisting of copper oxide bilayers, and it is notably absent in the single-layer compound La$_{2-x}$Sr$_{x}$CuO$_{4+δ}$. Neutron scattering data now show that the mode is present in Tl$_2$Ba$_2$Cu$_{6+δ}$, a single-layer compound with T$_c$ $\sim$ 90 K, thus demonstrating that it is a generic feature of the copper oxide superconductors, independent of the layer sequence. This restricts the theoretical models for the origin of the resonant mode and its role in the mechanism of high temperature superconductivity.
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Submitted 15 January, 2002;
originally announced January 2002.
Crystal Growth and Characterization of Doped CZT Crystals
Authors:
N. N. Kolesnikov,
S. P. Vesnovskii,
R. B. James,
N. S. Berzigiarova,
D. L. Alov,
A. G. Zvenigorodskii
Abstract:
Cd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive graphite heaters were used to control the temperature profiles within the furnaces, and an argon overpressure was used to reduce the cadmium loss. The crystals were doped with either Al, Ni, In, Ga, Ge or Sn. The do** was carried out by three different…
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Cd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive graphite heaters were used to control the temperature profiles within the furnaces, and an argon overpressure was used to reduce the cadmium loss. The crystals were doped with either Al, Ni, In, Ga, Ge or Sn. The do** was carried out by three different ways: 1) by adding of the pure metals during growth runs; 2) by adding of the tellurides of the metals during growth runs; or 3) by inserting of the metal tellurides during synthesis of the starting CZT material. Some of the growth process parameters were also varied. The as-grown CZT ingots had diameters of either 15 or 38 mm. The influence of the do** on CZT properties, particularly the conductivity type and specific electrical resistivity, will be discussed. Energy spectra from alpha particles (U-233, Ra-226, and U-233+Pu-239+Pu-238) and from different gamma sources (Cs-137, Co-60, Co-57, Am-241) will be reported.
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Submitted 4 July, 2001;
originally announced July 2001.
