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Physics-informed tracking of qubit fluctuations
Authors:
Fabrizio Berritta,
Jan A. Krzywda,
Jacob Benestad,
Joost van der Heijden,
Federico Fedele,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Evert van Nieuwenburg,
Jeroen Danon,
Anasua Chatterjee,
Ferdinand Kuemmeth
Abstract:
Environmental fluctuations degrade the performance of solid-state qubits but can in principle be mitigated by real-time Hamiltonian estimation down to time scales set by the estimation efficiency. We implement a physics-informed and an adaptive Bayesian estimation strategy and apply them in real time to a semiconductor spin qubit. The physics-informed strategy propagates a probability distribution…
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Environmental fluctuations degrade the performance of solid-state qubits but can in principle be mitigated by real-time Hamiltonian estimation down to time scales set by the estimation efficiency. We implement a physics-informed and an adaptive Bayesian estimation strategy and apply them in real time to a semiconductor spin qubit. The physics-informed strategy propagates a probability distribution inside the quantum controller according to the Fokker-Planck equation, appropriate for describing the effects of nuclear spin diffusion in gallium-arsenide. Evaluating and narrowing the anticipated distribution by a predetermined qubit probe sequence enables improved dynamical tracking of the uncontrolled magnetic field gradient within the singlet-triplet qubit. The adaptive strategy replaces the probe sequence by a small number of qubit probe cycles, with each probe time conditioned on the previous measurement outcomes, thereby further increasing the estimation efficiency. The combined real-time estimation strategy efficiently tracks low-frequency nuclear spin fluctuations in solid-state qubits, and can be applied to other qubit platforms by tailoring the appropriate update equation to capture their distinct noise sources.
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Submitted 14 April, 2024;
originally announced April 2024.
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Real-time two-axis control of a spin qubit
Authors:
Fabrizio Berritta,
Torbjørn Rasmussen,
Jan A. Krzywda,
Joost van der Heijden,
Federico Fedele,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Evert van Nieuwenburg,
Jeroen Danon,
Anasua Chatterjee,
Ferdinand Kuemmeth
Abstract:
Optimal control of qubits requires the ability to adapt continuously to their ever-changing environment. We demonstrate a real-time control protocol for a two-electron singlet-triplet qubit with two fluctuating Hamiltonian parameters. Our approach leverages single-shot readout classification and dynamic waveform generation, allowing full Hamiltonian estimation to dynamically stabilize and optimize…
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Optimal control of qubits requires the ability to adapt continuously to their ever-changing environment. We demonstrate a real-time control protocol for a two-electron singlet-triplet qubit with two fluctuating Hamiltonian parameters. Our approach leverages single-shot readout classification and dynamic waveform generation, allowing full Hamiltonian estimation to dynamically stabilize and optimize the qubit performance. Powered by a field-programmable gate array (FPGA), the quantum control electronics estimates the Overhauser field gradient between the two electrons in real time, enabling controlled Overhauser-driven spin rotations and thus bypassing the need for micromagnets or nuclear polarization protocols. It also estimates the exchange interaction between the two electrons and adjusts their detuning, resulting in extended coherence of Hadamard rotations when correcting for fluctuations of both qubit axes. Our study emphasizes the critical role of feedback in enhancing the performance and stability of quantum devices affected by quasistatic noise. Feedback will play an essential role in improving performance in various qubit implementations that go beyond spin qubits, hel** realize the full potential of quantum devices for quantum technology applications.
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Submitted 26 February, 2024; v1 submitted 3 August, 2023;
originally announced August 2023.
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An elongated quantum dot as a distributed charge sensor
Authors:
S. M. Patomäki,
J. Williams,
F. Berritta,
C. Laine,
M. A. Fogarty,
R. C. C. Leon,
J. Jussot,
S. Kubicek,
A. Chatterjee,
B. Govoreanu,
F. Kuemmeth,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separate…
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Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separated by an elongated quantum dot (340 nm long, 50 nm wide). We monitor charge transitions of the elongated quantum dot by measuring radiofrequency single-electron currents to a reservoir to which we connect a lumped-element resonator. We operate the dot as a single electron box to achieve charge sensing of remote quantum dots in each array, separated by a distance of 510 nm. Simultaneous charge detection on both ends of the elongated dot demonstrates that the charge is well distributed across its nominal length, supported by the simulated quantum-mechanical electron density. Our results illustrate how single-electron boxes can be realised with versatile foot- prints that may enable novel and compact quantum processor layouts, offering distributed charge sensing in addition to the possibility of mediated coupling.
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Submitted 4 January, 2023;
originally announced January 2023.
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Gate reflectometry in dense quantum dot arrays
Authors:
Fabio Ansaloni,
Heorhii Bohuslavskyi,
Federico Fedele,
Torbjørn Rasmussen,
Bertram Brovang,
Fabrizio Berritta,
Amber Heskes,
**g Li,
Louis Hutin,
Benjamin Venitucci,
Benoit Bertrand,
Maud Vinet,
Yann-Michel Niquet,
Anasua Chatterjee,
Ferdinand Kuemmeth
Abstract:
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Uti…
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Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2$\times$2 array of silicon quantum dots fabricated in a 300-mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2$\times$N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors.
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Submitted 5 June, 2023; v1 submitted 8 December, 2020;
originally announced December 2020.
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Heat Diffusion in high-$C_p$ Nb$_3$Sn Composite Superconducting Wires
Authors:
E. Barzi,
F. Berritta,
D. Turrioni,
A. V. Zlobin
Abstract:
A major focus of Nb$_3$Sn accelerator magnets is on significantly reducing or eliminating their training. Demonstration of an approach to increase the $C_p$ of Nb$_3$Sn magnets using new materials and technologies is very important both for particle accelerators and light sources. It would improve thermal stability and lead to much shorter magnet training, with substantial savings in machines' com…
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A major focus of Nb$_3$Sn accelerator magnets is on significantly reducing or eliminating their training. Demonstration of an approach to increase the $C_p$ of Nb$_3$Sn magnets using new materials and technologies is very important both for particle accelerators and light sources. It would improve thermal stability and lead to much shorter magnet training, with substantial savings in machines' commissioning costs. Both Hypertech and Bruker-OST have attempted to introduce high-$C_p$ elements in their wire design. This paper includes a description of these advanced wires, the finite element model of their heat diffusion properties as compared with the standard wires, and whenever available, a comparison between the minimum quench energy (MQE) calculated by the model and actual MQE measurements on wires.
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Submitted 17 August, 2020; v1 submitted 2 June, 2020;
originally announced June 2020.
