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Ferromagnetic order of ultra-thin La0.7Ba0.3MnO3 sandwiched between SrRuO3 layers
Authors:
Cinthia Piamonteze,
Francis Bern,
Sridhar Reddy Venkata Avula,
Michal Studniarek,
Carmine Autieri,
Michael Ziese,
Ionela Lindfords-Vrejoiu
Abstract:
We demonstrate the stability of ferromagnetic order of one unit cell thick optimally doped manganite (La0.7Ba0.3MnO3, LBMO) epitaxially grown between two layers of SrRuO3 (SRO) by using x-ray magnetic circular dichroism. At low temperature LBMO shows an inverted hysteresis loop due to the strong antiferromagnetic coupling to SRO. Moreover, above SRO TC the manganite still exhibits magnetic remanen…
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We demonstrate the stability of ferromagnetic order of one unit cell thick optimally doped manganite (La0.7Ba0.3MnO3, LBMO) epitaxially grown between two layers of SrRuO3 (SRO) by using x-ray magnetic circular dichroism. At low temperature LBMO shows an inverted hysteresis loop due to the strong antiferromagnetic coupling to SRO. Moreover, above SRO TC the manganite still exhibits magnetic remanence. Density Functional Theory calculations show that coherent interfaces of LBMO with SRO hinder electronic confinement and the strong magnetic coupling enables the increase of the LBMO TC. From the structural point of view, interfacing with SRO enables LBMO to have octahedral rotations similar to bulk. All these factors jointly contribute for stable ferromagnetism up to 130 K for a one unit cell LBMO film.
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Submitted 6 January, 2021;
originally announced January 2021.
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Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer
Authors:
J. Barzola-Quiquia,
A. Lessig,
A. Ballestar,
C. Zandalazini,
G. Bridoux,
F. Bern,
P. Esquinazi
Abstract:
We have investigated exchange bias effects in bilayers composed by the antiferromagnetic o-YMnO$_3$ and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Hall effect. The magnetization and magnetotransport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias…
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We have investigated exchange bias effects in bilayers composed by the antiferromagnetic o-YMnO$_3$ and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Hall effect. The magnetization and magnetotransport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field $H_{E}(T)$ as well as the magnetization shift $M_E(T)$, vanish around the Néel temperature $T_N \simeq 45$ K. We show that the magnetization shift $M_E(T)$ is also measured by a shift in the anisotropic magnetoresistance and planar Hall resistance having those a similar temperature dependence as the one obtained from magnetization measurements. Because the o-YMnO$_3$ film is highly insulating, our results demonstrate that the $M_E(T)$ shift originates at the interface within the ferromagnetic Co layer. To show that the main results obtained are general and not because of some special characteristics of the o-YMO$_3$ layer, similar measurements were done in Co/CoO micro-wires. The transport and magnetization characterization of the micro-wires supports the main conclusion that these effects are related to the response of the ferromagnetic Co layer at the interface.
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Submitted 9 August, 2012;
originally announced August 2012.
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Possible superconductivity in multi-layer-graphene by application of a gate voltage
Authors:
A. Ballestar,
P. Esquinazi,
J. Barzola-Quiquia,
S. Dusari,
F. Bern,
R. R. da Silva,
Y. Kopelevich
Abstract:
The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density ($n$) in the sample near surface region and under different values of $V_g$ at room temperature. Transport measurements on different MLG sampl…
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The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density ($n$) in the sample near surface region and under different values of $V_g$ at room temperature. Transport measurements on different MLG samples reveal that under a large enough applied electric field these regions undergo a superconducting-like transition at $T \lesssim 17$ K. A magnetic field applied parallel or normal to the graphene layers suppresses the transition without changing appreciably the transition temperature.
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Submitted 3 February, 2014; v1 submitted 15 February, 2012;
originally announced February 2012.
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Large local Hall effect in pin-hole dominated multigraphene spin-valves
Authors:
P. K. Muduli,
J. Barzola-Quiquia,
S. Dusari,
Ana Ballestar,
F. Bern,
W. Bohlmann,
P. Esquinazi
Abstract:
We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field swee** similar to the signal observed due to spin-injection into multigraphene. The switching behavior has been explained in terms of local Hall effect due to thickness irregularity of the tunnel…
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We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field swee** similar to the signal observed due to spin-injection into multigraphene. The switching behavior has been explained in terms of local Hall effect due to thickness irregularity of the tunnel barrier. Local Hall effect appears due to large local magnetostatic field produced at the roughness in the AlO$_x$ tunnel barrier. The effect of this local Hall effect is found to reduce as temperature is increased above 75 K. The strong local Hall effect hinders spin-injection into multigraphene resulting in no spin signal in non-local measurements.
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Submitted 23 July, 2012; v1 submitted 10 November, 2011;
originally announced November 2011.
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The influence of Ga$^+$-irradiation on the transport properties of mesoscopic conducting thin films
Authors:
J. Barzola-Quiquia,
S. Dusari,
G. Bridoux,
F. Bern,
A. Molle,
P. Esquinazi
Abstract:
We studied the influence of 30keV Ga$^+$-ions -- commonly used in focused ion beam (FIB) devices -- on the transport properties of thin crystalline graphite flake, La$_{0.7}$Ca$_{0.3}$MnO$_3$ and Co thin films. The changes of the electrical resistance were measured in-situ during irradiation and also the temperature and magnetic field dependence before and after irradiation. Our results show tha…
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We studied the influence of 30keV Ga$^+$-ions -- commonly used in focused ion beam (FIB) devices -- on the transport properties of thin crystalline graphite flake, La$_{0.7}$Ca$_{0.3}$MnO$_3$ and Co thin films. The changes of the electrical resistance were measured in-situ during irradiation and also the temperature and magnetic field dependence before and after irradiation. Our results show that the transport properties of these materials strongly change at Ga$^+$ fluences much below those used for patterning and ion beam induced deposition (IBID), limiting seriously the use of FIB when the intrinsic properties of the materials of interest are of importance. We present a method that can be used to protect the sample as well as to produce selectively irradiation-induced changes.
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Submitted 18 February, 2010;
originally announced February 2010.
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Disordered Electrical Potential Observed on the Surface of SiO$_2$ by Electric Field Microscopy
Authors:
N. García,
Zang Yan,
A. Ballestar,
J. Barzola-Quiquia,
F. Bern,
P. Esquinazi
Abstract:
The electrical potential on the surface of $\sim 300$ nm thick SiO$_2$ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to $\sim 0.4 $V within regions of $1 μ$m. The potential fluctuations observed at the surface of these usual dielectric holders of…
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The electrical potential on the surface of $\sim 300$ nm thick SiO$_2$ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to $\sim 0.4 $V within regions of $1 μ$m. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.
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Submitted 17 July, 2009; v1 submitted 18 May, 2009;
originally announced May 2009.
