Showing 1–8 of 8 results for author: Berl, M

Long distance electron-electron scattering detected with point contacts

Authors: Lev V. Ginzburg, Yuze Wu, Marc P. Röösli, Pedro Rosso Gomez, Rebekka Garreis, Chuyao Tong, Veronika Stará, Carolin Gold, Khachatur Nazaryan, Serhii Kryhin, Hiske Overweg, Christian Reichl, Matthias Berl, Takashi Taniguchi, Kenji Watanabe, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Abstract: We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak i… ▽ More We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With increasing temperature, the width of the peak increases monotonically, while its amplitude first increases and then decreases. For GaAs point contacts the peak is particularly sharp at relatively low temperatures $T\approx$1.5 K: the curve rounds on a scale of few tens of $μ$T hinting at length scales of several millimeters for the corresponding scattering processes. We propose a model based on the transition between different transport regimes with increasing temperature: from ballistic transport to few electron-electron scatterings to hydrodynamic superballistic flow to hydrodynamic Poiseuille-like flow. The model is in qualitative and, in many cases, quantitative agreement with the experimental observations. △ Less

Submitted 11 August, 2023; originally announced August 2023.

Comments: 14 pages, 11 figures

Journal ref: Phys. Rev. Research 5, 043088 (2023)

Nonlinear response of 2DEG in the quantum Hall regime

Authors: Shuichi Iwakiri, Lev V. Ginzburg, Marc P. Röösli, Yigal Meir, Ady Stern, Christian Reichl, Matthias Berl, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Abstract: Breaking of inversion symmetry leads to nonlinear and nonreciprocal electron transport, in which the voltage response does not invert with the reversal of the current direction. Many systems have incorporated inversion symmetry breaking into their band or crystal structures. In this work, we demonstrate that a conventional two-dimensional electron gas (2DEG) system with a back gate shows non-recip… ▽ More Breaking of inversion symmetry leads to nonlinear and nonreciprocal electron transport, in which the voltage response does not invert with the reversal of the current direction. Many systems have incorporated inversion symmetry breaking into their band or crystal structures. In this work, we demonstrate that a conventional two-dimensional electron gas (2DEG) system with a back gate shows non-reciprocal behavior (with voltage proportional to current squared) in the quantum Hall regime, which depends on the out-of-plane magnetic field and contact configuration. The inversion symmetry is broken due to the presence of the back gate and magnetic field, and our phenomenological model provides a qualitative explanation of the experimental data. Our results suggest a universal mechanism that gives rise to non-reciprocal behavior in gated samples. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Research 5, L032046 (2023)

Superballistic electron flow through a point contact in a Ga[Al]As heterostructure

Authors: Lev V. Ginzburg, Carolin Gold, Marc P. Röösli, Christian Reichl, Matthias Berl, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

Abstract: We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around $T \sim 10 K$ for all investigated electron densities and point contact widths. For high electron densities this c… ▽ More We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around $T \sim 10 K$ for all investigated electron densities and point contact widths. For high electron densities this conductance exceeds the fundamental ballistic limit (Sharvin limit). These observations are in agreement with a viscous electron transport model and previous experiments in graphene. △ Less

Submitted 2 June, 2021; v1 submitted 7 December, 2020; originally announced December 2020.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Research 3, 023033 (2021)

A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells

Authors: J. Scharnetzky, J. M. Meyer, M. Berl, C. Reichl, L. Tiemann, W. Dietsche, W. Wegscheider

Abstract: The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts… ▽ More The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts have been prepared and tested. Tuning the electron density in one layer while kee** the second 2DEG at fixed density, one observes a dramatic increase of the carrier concentration. This tunneling resonance, which occurs at equal densities of both layers, demonstrates the separated contacts to each individual layer. In another sample with a smaller tunneling barrier and parallel contacted 2DEGs, the transition from a single 2DEG to a bilayer system is investigated at 50 mK in magnetic fields up to 12 T, showing the gate stability in high magnetic fields and very low temperatures. Transitions into an insulating (Wigner crystal) phase are observed in the individual layers in high fields at filling factors below 1/3. The absence of a fractional quantum Hall liquid at filling factor 1/5 in our structure seems to be a consequence of confining the electrons in quantum wells rather than at interfaces. The observed metal-insulator transitions appear to be nearly unaffected by the presence of the second layer separated by a barrier which is only 3 nm thick. We believe that this planar back-gate design holds great promise to produce controllable bilayers suitable to investigate the exotic (non-abelian) properties of correlated states. △ Less

Submitted 13 February, 2020; originally announced February 2020.

Comments: 9 pages, 12 figures

Observation of quantum Hall interferometer phase jumps due to changing quasiparticle number

Authors: Marc P. Röösli, Lars Brem, Benedikt Kratochwil, Giorgio Nicolí, Beat A. Braem, Szymon Hennel, Peter Märki, Matthias Berl, Christian Reichl, Bernd Rosenow, Werner Wegscheider, Klaus Ensslin, Thomas Ihn

Abstract: We measure the magneto-conductance through a micron-sized quantum dot hosting about 500 electrons in the quantum Hall regime. In the Coulomb blockade, when the island is weakly coupled to source and drain contacts, edge reconstruction at filling factors between one and two in the dot leads to the formation of two compressible regions tunnel coupled via an incompressible region of filling factor… ▽ More We measure the magneto-conductance through a micron-sized quantum dot hosting about 500 electrons in the quantum Hall regime. In the Coulomb blockade, when the island is weakly coupled to source and drain contacts, edge reconstruction at filling factors between one and two in the dot leads to the formation of two compressible regions tunnel coupled via an incompressible region of filling factor $ν=1$. We interpret the resulting conductance pattern in terms of a phase diagram of stable charge in the two compressible regions. Increasing the coupling of the dot to source and drain, we realize a Fabry-Pérot quantum Hall interferometer, which shows an interference pattern strikingly similar to the phase diagram in the Coulomb blockade regime. We interpret this experimental finding using an empirical model adapted from the Coulomb blockaded to the interferometer case. The model allows us to relate the observed abrupt jumps of the Fabry-Pérot interferometer phase to a change in the number of bulk quasiparticles. This opens up an avenue for the investigation of phase shifts due to (fractional) charge redistributions in future experiments on similar devices. △ Less

Submitted 14 January, 2021; v1 submitted 28 October, 2019; originally announced October 2019.

Comments: 12 pages, 6 figures

Journal ref: Phys. Rev. B 101, 125302 (2020)

Scanning Gate Microscopy in a Viscous Electron Fluid

Authors: Beat A Braem, Francesco M D Pellegrino, Alessandro Principi, Marc Röösli, Carolin Gold, Szymon Hennel, Jonne V Koski, Matthias Berl, Werner Dietsche, Werner Wegscheider, Marco Polini, Thomas Ihn, Klaus Ensslin

Abstract: We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To probe this regime we measure so-called vicinity voltages and use a voltage-biased scanning tip to induce a movable local perturbation. We find that the scanning gat… ▽ More We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To probe this regime we measure so-called vicinity voltages and use a voltage-biased scanning tip to induce a movable local perturbation. We find that the scanning gate images differentiate reliably between the different regimes of electron transport. Our data are in good agreement with recent theories for interacting electron liquids in the ballistic and viscous regimes stimulated by measurements in graphene. However, the range of temperatures and densities where viscous effects are observable in Ga[Al]As are very distinct from the graphene material system. △ Less

Submitted 21 December, 2018; v1 submitted 9 July, 2018; originally announced July 2018.

Comments: With attached supplemental material and journal reference

Journal ref: Phys. Rev. B 98, 241304 (2018)

Stable Branched Electron Flow

Authors: B A Braem, C Gold, S Hennel, M Röösli, M Berl, W Dietsche, W Wegscheider, K. Ensslin, T Ihn

Abstract: The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by the correlated potential of remote dopants with an amplitude far below the Fermi energy. We find that the pattern persists even if the electron density is significantly reduced such that the change in Fermi energy exceeds… ▽ More The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by the correlated potential of remote dopants with an amplitude far below the Fermi energy. We find that the pattern persists even if the electron density is significantly reduced such that the change in Fermi energy exceeds the background potential amplitude. The branch pattern is robust against changes in charge carrier density, but not against changes in the background potential caused by additional illumination of the sample. △ Less

Submitted 8 July, 2018; originally announced July 2018.

Comments: Accepted for publication in New Journal of Physics

Journal ref: New Journal of Physics 20, (2018) 073015

Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation

Authors: Matthias Berl, Lars Tiemann, Werner Dietsche, Helmut Karl, Werner Wegscheider

Abstract: We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affectin… ▽ More We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality. △ Less

Submitted 12 January, 2016; v1 submitted 8 January, 2016; originally announced January 2016.

Comments: The following article has been submitted to Applied Physics Letters