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Photophysics of GaN single photon sources in the visible spectral range
Authors:
Amanuel M. Berhane,
Kwang-Yong Jeong,
Carlo Bradac,
Michael Walsh,
Dirk Englund,
Milos Toth,
Igor Aharonovich
Abstract:
In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited widths expected from excited state lifetime measurements. The broadening is ascribed to u…
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In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited widths expected from excited state lifetime measurements. The broadening is ascribed to ultra-fast spectral diffusion. Continuing the photophysics study on several emitters at room temperature (RT), a maximum average brightness of ~427 kCounts/s is measured. Furthermore, by determining the decay rates of emitters undergoing three-level optical transitions, radiative and non-radiative lifetimes are calculated at RT. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPE in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.
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Submitted 30 August, 2017;
originally announced August 2017.
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Photo-induced blinking in a solid state quantum system
Authors:
Amanuel M. Berhane,
Carlo Bradac,
Igor Aharonovich
Abstract:
Solid state single photon emitters (SPEs) are one of the prime components of many quantum nanophotonics devices. In this work, we report on an unusual, photo-induced blinking phenomenon of SPEs in gallium nitride (GaN). This is shown to be due to the modification in the transition kinetics of the emitter, via the introduction of additional laser-activated states. We investigate and characterize th…
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Solid state single photon emitters (SPEs) are one of the prime components of many quantum nanophotonics devices. In this work, we report on an unusual, photo-induced blinking phenomenon of SPEs in gallium nitride (GaN). This is shown to be due to the modification in the transition kinetics of the emitter, via the introduction of additional laser-activated states. We investigate and characterize the blinking effect on the brightness of the source and the statistics of the emitted photons. Combining second-order correlation and fluorescence trajectory measurements, we determine the photo-dynamics of the trap states and characterize power dependent decay rates and characteristic off-time blinking. Our work sheds new light into understanding solid-state quantum system dynamics and, specifically, power-induced blinking phenomena in SPEs.
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Submitted 13 July, 2017;
originally announced July 2017.
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Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride
Authors:
Amanuel M. Berhane,
Kwang-Yong Jeong,
Zoltán Bodrog,
Saskia Fiedler,
Tim Schröder,
Noelia Vico Triviño,
Tomás Palacios,
Adam Gali,
Milos Toth,
Dirk Englund,
Igor Aharonovich
Abstract:
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature…
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Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature photonic integrated circuit technologies. Hence, there is great interest in identifying quantum emitters in technologically mature semiconductors that are compatible with suitable heteroepitaxies. Here, we demonstrate robust single photon emitters based on defects in gallium nitride (GaN), the most established and well understood semiconductor that can emit light over the entire visible spectrum. We show that the emitters have excellent photophysical properties including a brightness in excess of 500x10^3 counts/s. We further show that the emitters can be found in a variety of GaN wafers, thus offering reliable and scalable platform for further technological development. We propose a theoretical model to explain the origin of these emitters based on cubic inclusions in hexagonal gallium nitride. Our results constitute a feasible path to scalable, integrated on-chip quantum technologies based on GaN.
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Submitted 15 October, 2016;
originally announced October 2016.
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Quantum Emission from Defects in Single Crystal Hexagonal Boron Nitride
Authors:
Toan Trong Tran,
Cameron Zachreson,
Amanuel Michael Berhane,
Kerem Bray,
Russell Guy Sandstrom,
Lu Hua Li,
Takashi Taniguchi,
Kenji Watanabe,
Igor Aharonovich,
Milos Toth
Abstract:
Bulk hexagonal boron nitride (hBN) is a highly nonlinear natural hyperbolic material that attracts major attention in modern nanophotonics applications. However, studies of its optical properties in the visible part of the spectrum and quantum emitters hosted by bulk hBN have not been reported to date. In this work we study the emission properties of hBN crystals in the red spectral range using su…
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Bulk hexagonal boron nitride (hBN) is a highly nonlinear natural hyperbolic material that attracts major attention in modern nanophotonics applications. However, studies of its optical properties in the visible part of the spectrum and quantum emitters hosted by bulk hBN have not been reported to date. In this work we study the emission properties of hBN crystals in the red spectral range using sub-bandgap optical excitation. Quantum emission from defects is observed at room temperature and characterized in detail. Our results advance the use of hBN in quantum nanophotonics technologies and enhance our fundamental understanding of its optical properties.
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Submitted 7 March, 2016;
originally announced March 2016.
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Electrical excitation of silicon-vacancy centers in single crystal diamond
Authors:
Amanuel M. Berhane,
Sumin Choi,
Hiromitsu Kato,
Toshiharu Makino,
Norikazu Mizuochi,
Satoshi Yamasaki,
Igor Aharonovich
Abstract:
Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and…
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Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.
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Submitted 16 March, 2015;
originally announced March 2015.
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Electroluminescence from isolated defects in zinc oxide, towards electrically triggered single photon sources at room temperature
Authors:
Sumin Choi,
Amanuel M. Berhane,
Angus Gentle,
Cuong Ton-That,
Matthew R Phillips,
Igor Aharonovich
Abstract:
Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography and quantum communications. However, so far majority of room temperature emitters are only excited optically, which limits their proper integration into scalable devices. In this work, we overcome this limitation and present room temperature electrically triggered light emission…
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Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography and quantum communications. However, so far majority of room temperature emitters are only excited optically, which limits their proper integration into scalable devices. In this work, we overcome this limitation and present room temperature electrically triggered light emission from localized defects in zinc oxide (ZnO) nanoparticles and thin films. The devices emit at the red spectral range and show excellent rectifying behavior. The emission is stable over an extensive period of time, providing an important prerequisite for practical devices. Our results open up possibilities to build new ZnO based quantum integrated devices that incorporate solid-state single photon sources for quantum information technologies.
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Submitted 12 February, 2015;
originally announced February 2015.
