-
Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure
Authors:
Philipp Steinleitner,
Philipp Merkl,
Alexander Graf,
Philipp Nagler,
Jonas Zipfel,
Christian Schüller,
Tobias Korn,
Alexey Chernikov,
Rupert Huber,
Samuel Brem,
Malte Selig,
Gunnar Berghäuser,
Ermin Malic
Abstract:
Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a cap** layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe$_2$ monolay…
▽ More
Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a cap** layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe$_2$ monolayer using intraband transitions. Ultrabroadband terahertz probes sensitively map out the full complex-valued mid-infrared conductivity of the heterostructure after optical injection of $1s$ A excitons. This approach allows us to trace the energies and linewidths of the atom-like $1s$-$2p$ transition of optically bright and dark excitons as well as the densities of these quasiparticles. The fundamental excitonic resonance red shifts and narrows in the WSe$_2$/hBN heterostructure compared to the bare monolayer. Furthermore, the ultrafast temporal evolution of the mid-infrared response function evidences the formation of optically dark excitons from an initial bright population. Our results provide key insight into the effect of non local screening on electron-hole correlations and open new possibilities of dielectric engineering of van der Waals heterostructures.
△ Less
Submitted 29 June, 2018;
originally announced June 2018.
-
Dark-exciton based strain sensing in transition metal dichalcogenides
Authors:
Maja Feierabend,
Zahra Khatibi,
Gunnar Berghäuser,
Ermin Malic
Abstract:
The trend towards ever smaller high-performance devices in modern technology requires novel materials with new functionalities. The recent emergence of atomically thin two-dimensional (2D) materials has opened up possibilities for the design of ultra-thin and flexible nanoelectronic devices. As truly 2D materials, they exhibit an optimal surface-to-volume ratio, which results in an extremely high…
▽ More
The trend towards ever smaller high-performance devices in modern technology requires novel materials with new functionalities. The recent emergence of atomically thin two-dimensional (2D) materials has opened up possibilities for the design of ultra-thin and flexible nanoelectronic devices. As truly 2D materials, they exhibit an optimal surface-to-volume ratio, which results in an extremely high sensitivity to external changes. This makes these materials optimal candidates for sensing applications. Here, we exploit the remarkably diverse exciton landscape in monolayer transition metal dichalcogenides to propose a novel dark-exciton-based concept for ultra sensitive strain sensors. We demonstrate that the dark-bright-exciton separation can be controlled by strain, which has a crucial impact on the activation of dark excitonic states. This results in a pronounced intensity change of dark excitons in photoluminescence spectra, when only 0.05 $\%$ strain is applied. The predicted extremely high optical gauge factors of up to 8000 are promising for the design of optical strain sensors.
△ Less
Submitted 19 June, 2018;
originally announced June 2018.
-
Optical fingerprint of non-covalently functionalized transition metal dichalcogenides
Authors:
Maja Feierabend,
Ermin Malic,
Andreas Knorr,
Gunnar Berghäuser
Abstract:
Atomically thin transition metal dichalcogenides (TMDs) hold promising potential for applications in optoelectronics. Due to their direct band gap and the extraordinarily strong Coulomb interaction, TMDs exhibit efficient light-matter coupling and tightly bound excitons. Moreover, large spin orbit coupling in combination with circular dichroism allows for spin and valley selective optical excitati…
▽ More
Atomically thin transition metal dichalcogenides (TMDs) hold promising potential for applications in optoelectronics. Due to their direct band gap and the extraordinarily strong Coulomb interaction, TMDs exhibit efficient light-matter coupling and tightly bound excitons. Moreover, large spin orbit coupling in combination with circular dichroism allows for spin and valley selective optical excitation. As atomically thin materials, they are very sensitive to changes in the surrounding environment. This motivates a functionalization approach, where external molecules are adsorbed to the materials surface to tailor its optical properties. Here, we apply the density matrix theory to investigate the potential of non-covalently functionalized TMDs. Considering exemplary spiropyran molecules with a strong dipole moment, we predict spectral redshifts and the appearance of an additional side peak in the absorption spectrum of functionalized TMDs. We show that the molecular characteristics, e.g. coverage, orientation and dipole moment, crucially influence the optical properties of TMDs, leaving a unique optical fingerprint in the absorption spectrum. Furthermore, we find that the molecular dipole moments open a channel for coherent intervalley coupling between the high-symmetry K and K' points which may open new possibilities for spin-valleytronics application.
△ Less
Submitted 22 January, 2018;
originally announced January 2018.
-
Molecule signatures in photoluminescence spectra of transition metal dichalcogenides
Authors:
Maja Feierabend,
Gunnar Berghaeuser,
Malte Selig,
Samuel Brem,
Timur Shegai,
Siegfried Eigler,
Ermin Malic
Abstract:
Monolayer transition metal dichalcogenides (TMDs) show an optimal surface-to-volume ratio and are thus promising candidates for novel molecule sensor devices. It was recently predicted that a certain class of molecules exhibiting a large dipole moment can be detected through the activation of optically inaccessible (dark) excitonic states in absorption spectra of tungsten-based TMDs. In this work,…
▽ More
Monolayer transition metal dichalcogenides (TMDs) show an optimal surface-to-volume ratio and are thus promising candidates for novel molecule sensor devices. It was recently predicted that a certain class of molecules exhibiting a large dipole moment can be detected through the activation of optically inaccessible (dark) excitonic states in absorption spectra of tungsten-based TMDs. In this work, we investigate the molecule signatures in photoluminescence spectra in dependence of a number of different experimentally accessible quantities, such as excitation density, temperature as well as molecular characteristics including the dipole moment and its orientation, molecule-TMD distance, molecular coverage and distribution. We show that under certain optimal conditions, even room temperature detection of molecules can be achieved.
△ Less
Submitted 14 December, 2017;
originally announced December 2017.
-
Exciton Relaxation Cascade in Two-dimensional Transition-metal dichalcogenides
Authors:
Samuel Brem,
Gunnar Berghaeuser,
Malte Selig,
Ermin Malic
Abstract:
Monolayers of transition-metal dichalcogenides (TMDs) are characterized by an extraordinarily strong Coulomb interaction giving rise to tightly bound excitons with binding energies of hundreds of meV. Excitons dominate the optical response as well as the ultrafast dynamics in TMDs. As a result, a microscopic understanding of exciton dynamics is the key for technological application of these materi…
▽ More
Monolayers of transition-metal dichalcogenides (TMDs) are characterized by an extraordinarily strong Coulomb interaction giving rise to tightly bound excitons with binding energies of hundreds of meV. Excitons dominate the optical response as well as the ultrafast dynamics in TMDs. As a result, a microscopic understanding of exciton dynamics is the key for technological application of these materials. In spite of this immense importance, elementary processes guiding the formation and relaxation of excitons after optical excitation of an electron-hole plasma has remained unexplored to a large extent. Here, we provide a fully quantum mechanical description of momentum- and energy-resolved exciton dynamics in monolayer molybdenum diselenide (MoSe$_2$) including optical excitation, formation of excitons, radiative recombination as well as phonon-induced cascade-like relaxation down to the excitonic ground state. Based on the gained insights, we reveal experimentally measurable features in pump-probe spectra providing evidence for the exciton relaxation cascade.
△ Less
Submitted 13 December, 2017;
originally announced December 2017.
-
Phonon Sidebands in Transition Metal Dichalcogenides
Authors:
Dominik Christiansen,
Malte Selig,
Gunnar Berghäuser,
Robert Schmidt,
Iris Niehues,
Robert Schneider,
Ashish Arora,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
Ermin Malic,
Andreas Knorr
Abstract:
Excitons dominate the optical properties of monolayer transition metal dichalcogenides (TMDs). Besides optically accessible bright exciton states, TMDs exhibit also a multitude of optically forbidden dark excitons. Here, we show that efficient exciton-phonon scattering couples bright and dark states and gives rise to an asymmetric excitonic line shape. The observed asymmetry can be traced back to…
▽ More
Excitons dominate the optical properties of monolayer transition metal dichalcogenides (TMDs). Besides optically accessible bright exciton states, TMDs exhibit also a multitude of optically forbidden dark excitons. Here, we show that efficient exciton-phonon scattering couples bright and dark states and gives rise to an asymmetric excitonic line shape. The observed asymmetry can be traced back to phonon-induced sidebands that are accompanied by a polaron redshift. We present a joint theory-experiment study investigating the microscopic origin of these sidebands in different TMD materials taking into account intra- and intervalley scattering channels opened by optical and acoustic phonons. The gained insights contribute to a better understanding of the optical fingerprint of these technologically promising nanomaterials.
△ Less
Submitted 23 November, 2017;
originally announced November 2017.
-
The role of momentum-dark excitons in the elementary optical response of bilayer WSe$_{2}$
Authors:
Jessica Lindlau,
Malte Selig,
Andre Neumann,
Léo Colombier,
Jonghwan Kim,
Gunnar Berghäuser,
Feng Wang,
Ermin Malic,
Alexander Högele
Abstract:
Monolayer (ML) transition metal dichalcogenides (TMDs) undergo substantial changes in the single-particle band structure and excitonic optical response upon the addition of just one layer. As opposed to the single-layer limit, the bandgap of bilayer (BL) TMD semiconductors is indirect which results in reduced photoluminescence with richly structured spectra that have eluded a detailed understandin…
▽ More
Monolayer (ML) transition metal dichalcogenides (TMDs) undergo substantial changes in the single-particle band structure and excitonic optical response upon the addition of just one layer. As opposed to the single-layer limit, the bandgap of bilayer (BL) TMD semiconductors is indirect which results in reduced photoluminescence with richly structured spectra that have eluded a detailed understanding to date. Here, we provide a closed interpretation of the elementary optical responses of BL WSe$_2$ as a representative material for the wider class of TMD semiconductors. By combining theoretical calculations with comprehensive spectroscopy experiments, we identify the crucial role of momentum-indirect excitons for the understanding of basic absorption and emission spectra ubiquitously exhibited by various TMD BLs. Our results shed light on the origin of quantum dot (QD) formation in monolayer and bilayer crystals and will facilitate further advances directed at opto-electronic applications of layered TMD semiconductors in van der Waals heterostructures and devices.
△ Less
Submitted 25 October, 2017; v1 submitted 3 October, 2017;
originally announced October 2017.
-
Dark excitons in transition metal dichalcogenides
Authors:
Ermin Malic,
Malte Selig,
Maja Feierabend,
Samuel Brem,
Dominik Christiansen,
Florian Wendler,
Andreas Knorr,
Gunnar Berghäuser
Abstract:
Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction and valence band, dark excitonic states can be formed. They are inaccessibly by light due to the required spin-flip and/or momentum transfer. The relative posi…
▽ More
Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction and valence band, dark excitonic states can be formed. They are inaccessibly by light due to the required spin-flip and/or momentum transfer. The relative position of these dark states with respect to the optically accessible bright excitons has a crucial impact on the emission efficiency of these materials and thus on their technological potential. Based on the solution of the Wannier equation, we present the excitonic landscape of the most studied TMD materials including the spectral position of momentum- and spin-forbidden excitonic states. We show that the knowledge of the electronic dispersion does not allow to conclude about the nature of the material's band gap, since excitonic effects can give rise to significant changes. Furthermore, we reveal that an exponentially reduced photoluminescence yield does not necessarily reflect a transition from a direct to a non-direct gap material, but can be ascribed in most cases to a change of the relative spectral distance between bright and dark excitonic states.
△ Less
Submitted 4 September, 2017;
originally announced September 2017.
-
Map** of the dark exciton landscape in transition metal dichalcogenides
Authors:
Gunnar Berghäuser,
Philipp Steinleitner,
Philipp Merkl,
Rupert Huber,
Andreas Knorr,
Ermin Malic
Abstract:
Transition metal dichalcogenides (TMDs) exhibit a remarkable exciton physics including optically accessible (bright) as well as spin- and momentum-forbidden (dark) excitonic states. So far the dark exciton landscape has not been revealed leaving in particular the spectral position of momentum-forbidden dark states completely unclear. This has a significant impact on the technological application p…
▽ More
Transition metal dichalcogenides (TMDs) exhibit a remarkable exciton physics including optically accessible (bright) as well as spin- and momentum-forbidden (dark) excitonic states. So far the dark exciton landscape has not been revealed leaving in particular the spectral position of momentum-forbidden dark states completely unclear. This has a significant impact on the technological application potential of TMDs, since the nature of the energetically lowest state determines, if the material is a direct-gap semiconductor. Here, we show how dark states can be experimentally revealed by probing the intra-excitonic 1s-2p transition. Distinguishing the optical response shortly after the excitation (< 100$\,$fs) and after the exciton thermalization (> 1$\,$ps) allows us to demonstrate the relative position of bright and dark excitons. We find both in theory and experiment a clear blue-shift in the optical response demonstrating for the first time the transition of bright exciton populations into lower lying momentum- and spin-forbidden dark excitonic states in monolayer WSe$_2$.
△ Less
Submitted 25 August, 2017;
originally announced August 2017.
-
Impact of strain on the optical fingerprint of monolayer transition metal dichalcogenides
Authors:
Maja Feierabend,
Alexandre Morlet,
Gunnar Berghäuser,
Ermin Malic
Abstract:
Strain presents a straightforward tool to tune electronic properties of atomically thin nanomaterials that are highly sensitive to lattice deformations. While the influence of strain on the electronic band structure has been intensively studied, there are only few works on its impact on optical properties of monolayer transition metal dichalcogenides (TMDs). Combining microscopic theory based on W…
▽ More
Strain presents a straightforward tool to tune electronic properties of atomically thin nanomaterials that are highly sensitive to lattice deformations. While the influence of strain on the electronic band structure has been intensively studied, there are only few works on its impact on optical properties of monolayer transition metal dichalcogenides (TMDs). Combining microscopic theory based on Wannier and Bloch equations with nearestneighbor tight-binding approximation, we present an analytical view on how uni- and biaxial strain influences the optical fingerprint of TMDs including their excitonic binding energy, oscillator strength, optical selection rules, and the radiative broadening of excitonic resonances. We show that the impact of strain can be reduced to changes in the lattice structure (geometric effect) and in the orbital functions (overlap effect). In particular, we demonstrate that the valley-selective optical selection rule is softened in the case of uniaxial strain due to the introduced asymmetry in the lattice structure. Furthermore, we reveal a considerable increase of the radiative dephasing due to strain-induced changes in the optical matrix element and the excitonic wave functions.
△ Less
Submitted 1 June, 2017;
originally announced June 2017.
-
Dark and bright exciton formation, thermalization, and photoluminescence in monolayer transition metal dichalcogenides
Authors:
Malte Selig,
Gunnar Berghäuser,
Marten Richter,
Rudolf Bratschitsch,
Andreas Knorr,
Ermin Malic
Abstract:
The remarkably strong Coulomb interaction in atomically thin transition metal dichalcogenides (TMDs) results in an extraordinarily rich many-particle physics including the formation of tightly bound excitons. Besides optically accessible bright excitonic states, these materials also exhibit a variety of dark excitons. Since they can even lie below the bright states, they have a strong influence on…
▽ More
The remarkably strong Coulomb interaction in atomically thin transition metal dichalcogenides (TMDs) results in an extraordinarily rich many-particle physics including the formation of tightly bound excitons. Besides optically accessible bright excitonic states, these materials also exhibit a variety of dark excitons. Since they can even lie below the bright states, they have a strong influence on the exciton dynamics, lifetimes, and photoluminescence. While very recently, the presence of dark excitonic states has been experimentally demonstrated, the origin of these states, their formation, and dynamics have not been revealed yet. Here, we present a microscopic study shedding light on time- and energy-resolved formation and thermalization of bright and dark intra- and intervalley excitons as well as their impact on the photoluminescence in different TMD materials. We demonstrate that intervalley dark excitons, so far widely overlooked in current literature, play a crucial role in tungsten-based TMDs giving rise to an enhanced photoluminescence and reduced exciton lifetimes at elevated temperatures.
△ Less
Submitted 9 March, 2017;
originally announced March 2017.
-
Out of the dark and into the light: towards dark-state based chemical sensors
Authors:
Maja Feierabend,
Gunnar Berghäuser,
Andreas Knorr,
Ermin Malic
Abstract:
The rapidly increasing use of sensors throughout different research disciplines and the demand for more efficient devices with less power consumption depends critically on the emergence of new sensor materials and novel sensor concepts. Atomically thin transition metal dichalcogenides have a huge potential for sensor development within a wide range of applications. Their optimal surface-to-volume…
▽ More
The rapidly increasing use of sensors throughout different research disciplines and the demand for more efficient devices with less power consumption depends critically on the emergence of new sensor materials and novel sensor concepts. Atomically thin transition metal dichalcogenides have a huge potential for sensor development within a wide range of applications. Their optimal surface-to-volume ratio combined with strong light-matter interaction results in a high sensitivity to changes in their surrounding. Here, we present a novel, highly efficient sensing mechanism to detect molecules based on dark excitons in these materials. We show that the presence of molecules with a dipole moment transforms dark states into bright excitons resulting in an additional pronounced peak in easy accessible optical spectra. This effect exhibits a huge potential for sensor applications, since it offers an unambiguous optical finger print for the detection of molecules - in contrast to common sensing schemes relying on small peak shifts and intensity changes.
△ Less
Submitted 9 December, 2016;
originally announced December 2016.
-
Optical fingerprint of dark 2p-states in transition metal dichalcogenides
Authors:
Gunnar Berghäuser,
Andreas Knorr,
Ermin Malic
Abstract:
We present a microscopic study on higher excitonic states in transition metal dichalcogenides in the presence of disorder. We show that the geometric phase cancels the degeneration of 2s and 2p states and that a significant disorder-induced coupling of bright and dark states offers a strategy to circumvent optical selection rules. As a prove, we show a direct fingerprint of dark 2p states in absor…
▽ More
We present a microscopic study on higher excitonic states in transition metal dichalcogenides in the presence of disorder. We show that the geometric phase cancels the degeneration of 2s and 2p states and that a significant disorder-induced coupling of bright and dark states offers a strategy to circumvent optical selection rules. As a prove, we show a direct fingerprint of dark 2p states in absorption spectra of WS$_2$. The predicted softening of optical selection rules through exciton-disorder coupling is of general nature and therefore applicable to related two-dimensional semiconductors.
△ Less
Submitted 23 May, 2016;
originally announced May 2016.
-
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
Authors:
Malte Selig,
Gunnar Berghäuser,
Archana Raja,
Philipp Nagler,
Christian Schüller,
Tony F. Heinz,
Tobias Korn,
Alexey Chernikov,
Ermin Malic,
Andreas Knorr
Abstract:
Atomically thin transition metal dichalcogenides (TMDs) are direct-gap semiconductors with strong light-matter and Coulomb interaction. The latter accounts for tightly bound excitons, which dominate the optical properties of these technologically promising materials. Besides the optically accessible bright excitons, these systems exhibit a variety of dark excitonic states. They are not visible in…
▽ More
Atomically thin transition metal dichalcogenides (TMDs) are direct-gap semiconductors with strong light-matter and Coulomb interaction. The latter accounts for tightly bound excitons, which dominate the optical properties of these technologically promising materials. Besides the optically accessible bright excitons, these systems exhibit a variety of dark excitonic states. They are not visible in optical spectra, but can strongly influence the coherence lifetime and the linewidth of the emission from bright exciton states. In a recent study, an experimental evidence for the existence of such dark states has been demonstrated, as well as their strong impact on the quantum efficiency of light emission in TMDs. Here, we reveal the microscopic origin of the excitonic coherence lifetime in two representative TMD materials (WS$_2$ and MoSe$_2$) within a joint study combining microscopic theory with optical experiments. We show that the excitonic coherence lifetime is determined by phonon-induced intra- and intervalley scattering into dark excitonic states. Remarkably, and in accordance with the theoretical prediction, we find an efficient exciton relaxation in WS$_2$ through phonon emission at all temperatures.
△ Less
Submitted 11 May, 2016;
originally announced May 2016.
-
Trion Formation Dynamics in Monolayer Transition Metal Dichalcogenides
Authors:
Akshay Singh,
Galan Moody,
Kha Tran,
Marie Scott,
Vincent Overbeck,
Gunnar Berghäuser,
John Schaibley,
Edward J. Seifert,
Dennis Pleskot,
Nathaniel M. Gabor,
Jiaqiang Yan,
David G. Mandrus,
Marten Richter,
Ermin Malic,
Xiaodong Xu,
Xiaoqin Li
Abstract:
We report charged exciton (trion) formation dynamics in doped monolayer transition metal dichalcogenides (TMDs), specifically molybdenum diselenide (MoSe2), using resonant two-color pump-probe spectroscopy. When resonantly pum** the exciton transition, trions are generated on a picosecond timescale through exciton-electron interaction. As the pump energy is tuned from the high energy to low ener…
▽ More
We report charged exciton (trion) formation dynamics in doped monolayer transition metal dichalcogenides (TMDs), specifically molybdenum diselenide (MoSe2), using resonant two-color pump-probe spectroscopy. When resonantly pum** the exciton transition, trions are generated on a picosecond timescale through exciton-electron interaction. As the pump energy is tuned from the high energy to low energy side of the inhomogeneously broadened exciton resonance, the trion formation time increases by ~ 50%. This feature can be explained by the existence of both localized and delocalized excitons in a disordered potential and suggests the existence of an exciton mobility edge in TMDs. The quasiparticle formation and conversion processes are important for interpreting photoluminescence and photoconductivity in TMDs.
△ Less
Submitted 16 December, 2015; v1 submitted 16 July, 2015;
originally announced July 2015.
-
Analytical approach to excitonic properties of MoS2
Authors:
Gunnar Berghäuser,
Ermin Malic
Abstract:
We present an analytical investigation of the optical absorption spectrum of monolayer molybdenumdisulfide. Based on the density matrix formalism, our approach gives insights into the microscopic origin of excitonic transitions, their relative oscillator strength, and binding energy. We show analytical expressions for the carrier-light coupling element, which contains the optical selection rules a…
▽ More
We present an analytical investigation of the optical absorption spectrum of monolayer molybdenumdisulfide. Based on the density matrix formalism, our approach gives insights into the microscopic origin of excitonic transitions, their relative oscillator strength, and binding energy. We show analytical expressions for the carrier-light coupling element, which contains the optical selection rules and well describes the valleyselective polarization in MoS2. In agreement with experimental results, we find the formation of strongly bound electron-hole pairs due to the efficient Coulomb interaction. The absorption spectrum of MoS2 on a silicon substrate features two pronounced peaks at 1.91 eV and 2.05 eV corresponding to the A and B exciton, which are characterized by binding energies of 420 meV and 440 meV, respectively. Our calculations reveal their relative oscillator strength and predict the appearance of further low-intensity excitonic transitions at higher energies. The presented approach is applicable to other transition metal dichalcogenides and can be extended to investigations of trion and biexcitonic effects.
△ Less
Submitted 5 November, 2013;
originally announced November 2013.
-
Excitons in Graphene and the Influence of the Dielectric Environment
Authors:
J. H. Grönqvist,
T. Stroucken,
G. Berghäuser,
S. W. Koch
Abstract:
The exciton Wannier equation for graphene is solved for different background dielectric constants. It is shown that freestanding graphene features strong Coulomb effects with a very large exciton binding energy exceeding $3\,$eV. A second-order transition to a weak Coulomb regime is found if the effective background dielectric constant exceeds a critical value. All bound-state solutions vanish for…
▽ More
The exciton Wannier equation for graphene is solved for different background dielectric constants. It is shown that freestanding graphene features strong Coulomb effects with a very large exciton binding energy exceeding $3\,$eV. A second-order transition to a weak Coulomb regime is found if the effective background dielectric constant exceeds a critical value. All bound-state solutions vanish for epitaxial graphene on a substrate with large background permittivity, such as SiC.
△ Less
Submitted 28 July, 2011;
originally announced July 2011.
