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High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
A. Elbaroudy,
A. W. M. Jordan,
F. Thompson,
George Nichols,
Y. Shi,
Man Chun Tam,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm$^2$/Vs at 2$\times 10^{12}$ /cm$^2$. Large Rashba spin-orbit coefficients up to 124 meV$\cdot$Å are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78$-$99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages $I_c R_{\text{N}}$ up to 870 $μ$V and critical current densities up to 9.6 $μ$A/$μ$m, among the largest values reported for Nb-InAs SNS devices.
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Submitted 22 May, 2024;
originally announced May 2024.
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Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
Y. Shi,
George Nichols,
P. C. Klipstein,
A. Elbaroudy,
Sean M. Walker,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are obser…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=1$ in magnetic fields of up to $B=18$ T. We show that the electron density is gate-tunable, reproducible, and stable from pinch-off to 4$\times 10^{11}$ cm$^{-2}$, and peak mobilities exceed 24,000 cm$^2$/Vs. Large Rashba spin-orbit coefficients up to 110 meV$\cdot$Å are obtained through weak anti-localization measurements. An effective mass of 0.019$m_e$ is determined from temperature-dependent magnetoresistance measurements, and a g-factor of 41 at a density of 3.6$\times 10^{11}$ cm$^{-2}$ is obtained from coincidence measurements in tilted magnetic fields. By comparing two heterostructures with and without a delta-doped layer beneath the quantum well, we find that the carrier density is stable with time when do** in the ternary Al$_{0.1}$In$_{0.9}$Sb barrier is not present. Finally, the effect of modulation do** on structural asymmetry between the two heterostructures is characterized.
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Submitted 7 January, 2023; v1 submitted 16 September, 2022;
originally announced September 2022.
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Observation and manipulation of a phase separated state in a charge density wave material
Authors:
Sean M. Walker,
Tarun Patel,
Junichi Okamoto,
Deler Langenberg,
E. Annelise Bergeron,
**g**g Gao,
Xuan Luo,
Wenjian Lu,
Yu** Sun,
Adam W. Tsen,
Jonathan Baugh
Abstract:
The 1T polytype of TaS$_\textrm{2}$ has been studied extensively as a strongly correlated system. As 1T-TaS$_\textrm{2}$ is thinned towards the 2D limit, its phase diagram shows significant deviations from that of the bulk material. Optoelectronic maps of ultrathin 1T-TaS$_\textrm{2}$ have indicated the presence of non-equilibrium charge density wave phases within the hysteresis region of the near…
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The 1T polytype of TaS$_\textrm{2}$ has been studied extensively as a strongly correlated system. As 1T-TaS$_\textrm{2}$ is thinned towards the 2D limit, its phase diagram shows significant deviations from that of the bulk material. Optoelectronic maps of ultrathin 1T-TaS$_\textrm{2}$ have indicated the presence of non-equilibrium charge density wave phases within the hysteresis region of the nearly commensurate (NC) to commensurate (C) transition. We perform scanning tunneling microscopy on exfoliated ultrathin flakes of 1T-TaS$_\textrm{2}$ within the NC-C hysteresis window, finding evidence that the observed non-equilibrium phases consist of intertwined, irregularly shaped NC-like and C-like domains. After applying lateral electrical signals to the sample we image changes in the geometric arrangement of the different regions. We use a phase separation model to explore the relationship between electronic inhomogeneity present in ultrathin 1T-TaS$_\textrm{2}$ and its bulk resistivity. These results demonstrate the role of phase competition morphologies in determining the properties of 2D materials.
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Submitted 16 December, 2021;
originally announced December 2021.
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Efficient recycling strategies for preparing large Fock states from single-photon sources --- Applications to quantum metrology
Authors:
Keith R. Motes,
Ryan L. Mann,
Jonathan P. Olson,
Nicholas M. Studer,
E. Annelise Bergeron,
Alexei Gilchrist,
Jonathan P. Dowling,
Dominic W. Berry,
Peter P. Rohde
Abstract:
Fock states are a fundamental resource for many quantum technologies such as quantum metrology. While much progress has been made in single-photon source technologies, preparing Fock states with large photon number remains challenging. We present and analyze a bootstrapped approach for non-deterministically preparing large photon-number Fock states by iteratively fusing smaller Fock states on a be…
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Fock states are a fundamental resource for many quantum technologies such as quantum metrology. While much progress has been made in single-photon source technologies, preparing Fock states with large photon number remains challenging. We present and analyze a bootstrapped approach for non-deterministically preparing large photon-number Fock states by iteratively fusing smaller Fock states on a beamsplitter. We show that by employing state recycling we are able to exponentially improve the preparation rate over conventional schemes, allowing the efficient preparation of large Fock states. The scheme requires single-photon sources, beamsplitters, number-resolved photo-detectors, fast-feedforward, and an optical quantum memory.
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Submitted 13 March, 2018; v1 submitted 1 March, 2016;
originally announced March 2016.
