Showing 1–48 of 48 results for author: Berciaud, S

Symmetry-dependent dielectric screening of optical phonons in monolayer graphene

Authors: Loïc Moczko, Sven Reichardt, Aditya Singh, Xin Zhang, Luis E. Parra López, Joanna L. P. Wolff, Aditi Raman Moghe, Etienne Lorchat, Rajendra Singh, Kenji Watanabe, Takashi Taniguchi, Hicham Majjad, Michelangelo Romeo, Arnaud Gloppe, Ludger Wirtz, Stéphane Berciaud

Abstract: Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional syste… ▽ More Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional systems, in particular in graphene, where they appear as sharp kinks in the in-plane optical phonon branches. However, in spite of intense research efforts on electron-phonon coupling in graphene and related van der Waals heterostructures, little is known regarding the links between the symmetry properties of optical phonons at and near Kohn anomalies and their sensitivity towards the local environment. Here, using inelastic light scattering (Raman) spectroscopy, we investigate a set of custom-designed graphene-based van der Waals heterostructures, wherein dielectric screening is finely controlled at the atomic layer level. We demonstrate experimentally and explain theoretically that, depending exclusively on their symmetry properties, the two main Raman modes of graphene react differently to the surrounding environment. While the Raman-active near-zone-edge optical phonons in graphene undergo changes in their frequencies due to the neighboring dielectric environment, the in-plane, zone-centre optical phonons are symmetry-protected from the influence of the latter. These results shed new light on the unique electron-phonon coupling properties in graphene and related systems and provide invaluable guidelines to characterise dielectric screening in van der Waals heterostructures and moiré superlattices. △ Less

Submitted 20 October, 2023; originally announced October 2023.

Comments: 22 pages, main manuscript with 3 figures, appendix with 5 figures, supplemental material with 6 figures

Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flakes Morphology

Authors: M. S. Islam, R. K. Chowdhury, M. Barthelemy, L. Moczko, P. Hebraud, S. Berciaud, A. Barsella, F. Fras

Abstract: Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines, revealing 11 distinct d… ▽ More Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines, revealing 11 distinct defect families within the 1.6 to 2.2 eV energy range. This challenges hypotheses of a random energy distribution. We also reported averaged defect parameters, including emission linewidths, spatial density, phonon side bands, and the Debye-Waller factors. These findings provide valuable insights to decipher the microscopic origin of emitters in hBN hosts. We also explored the influence of hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning flake size and arrangement we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods. It highlights the importance of investigating flake morphological control to gain deeper insights into the origins of defects and to expand the spectral tailoring capabilities of defects in hBN. △ Less

Submitted 26 September, 2023; originally announced September 2023.

Room-Temperature Anomalous Hall Effect in Graphene in Interfacial Magnetic Proximity with EuO Grown by Topotactic Reduction

Authors: Satakshi Pandey, Simon Hettler, Raul Arenal, Corinne Bouillet, Aditi Raman Moghe, Stephane Berciaud, Jerome Robert, Jean Francois Dayen, David Halley

Abstract: We show that thin layers of EuO, a ferromagnetic insulator, can be achieved by topotactic reduction under titanium of a Eu2O3 film deposited on top of a graphene template. The reduction process leads to the formation of a 7-nm thick EuO smooth layer, without noticeable structural changes in the underlying chemical vapor deposited (CVD) graphene. The obtained EuO films exhibit ferromagnetism, with… ▽ More We show that thin layers of EuO, a ferromagnetic insulator, can be achieved by topotactic reduction under titanium of a Eu2O3 film deposited on top of a graphene template. The reduction process leads to the formation of a 7-nm thick EuO smooth layer, without noticeable structural changes in the underlying chemical vapor deposited (CVD) graphene. The obtained EuO films exhibit ferromagnetism, with a Curie temperature that decreases with the initially deposited Eu2O3 layer thickness. By adjusting the thickness of the Eu2O3 layer below 7 nm, we promote the formation of EuO at the very graphene interface: the EuO/graphene heterostructure demonstrates the anomalous Hall effect (AHE), which is a fingerprint of proximity-induced spin polarization in graphene. The AHE signal moreover persists above Tc up to 350K due to a robust super-paramagnetic phase in EuO. This original high-temperature magnetic phase is attributed to magnetic polarons in EuO: we propose that the high strain in our EuO films grown on graphene stabilizes the magnetic polarons up to room temperature. This effect is different from the case of bulk EuO in which polarons vanish in the vicinity of the Curie temperature Tc= 69K. △ Less

Submitted 2 September, 2023; originally announced September 2023.

Comments: 29 pages

Submolecular-scale control of phototautomerization

Authors: Anna Rosławska, Katharina Kaiser, Michelangelo Romeo, Eloïse Devaux, Fabrice Scheurer, Stéphane Berciaud, Tomáš Neuman, Guillaume Schull

Abstract: Many natural and artificial reactions including photosynthesis or photopolymerization are initiated by stimulating organic molecules into an excited state, which enables new reaction paths. Controlling light-matter interaction can influence this key concept of photochemistry, however, it remained a challenge to apply this strategy to control photochemical reactions at the atomic scale. Here, we pr… ▽ More Many natural and artificial reactions including photosynthesis or photopolymerization are initiated by stimulating organic molecules into an excited state, which enables new reaction paths. Controlling light-matter interaction can influence this key concept of photochemistry, however, it remained a challenge to apply this strategy to control photochemical reactions at the atomic scale. Here, we profit from the extreme confinement of the electromagnetic field at the apex of a scanning tunneling microscope (STM) tip to drive and control the rate of a free-base phthalocyanine phototautomerization with submolecular precision. By tuning the laser excitation wavelength and choosing the STM tip position, we control the phototautomerization rate and the relative tautomer population. This sub-molecular optical control can be used to study any other photochemical processes. △ Less

Submitted 22 May, 2023; originally announced May 2023.

Electroluminescence of monolayer WS$_2$ in a scanning tunneling microscope: the effect of bias polarity on the spectral and angular distribution of the emitted light

Authors: Ricardo Javier Peña Román}, Delphine Pommier, Rémi Bretel, Luis E. Parra López, Etienne Lorchat, Julien Chaste, Abdelkarim Ouerghi, Séverine Le Moal, Elizabeth Boer-Duchemin, Gérald Dujardin, Andrey G. Borisov, Luiz F. Zagonel, Guillaume Schull, Stéphane Berciaud, Eric Le Moal

Abstract: Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS$_2$). Excitonic electroluminescence is measured both at positive and negative sample bias. Using optical spectroscopy and Fourier-space optical microscopy, we show that the bias polarity of the tunnel junction determines the spectral and angular distribution of the… ▽ More Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS$_2$). Excitonic electroluminescence is measured both at positive and negative sample bias. Using optical spectroscopy and Fourier-space optical microscopy, we show that the bias polarity of the tunnel junction determines the spectral and angular distribution of the emitted light. At positive sample bias, only emission from excitonic species featuring an in-plane transition dipole moment is detected. Based on the spectral distribution of the emitted light, we infer that the dominant contribution is from charged excitons, i.e., trions. At negative sample bias, additional contributions from lower-energy excitonic species are evidenced in the emission spectra and the angular distribution of the emitted light reveals a mixed character of in-plane and out-of-plane transition dipole moments. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Tip-induced excitonic luminescence nanoscopy of an atomically-resolved van der Waals heterostructure

Authors: Luis E. Parra López, Anna Rosławska, Fabrice Scheurer, Stéphane Berciaud, Guillaume Schull

Abstract: Low-temperature scanning tunneling microscopy is used to probe, with atomic-scale spatial resolution, the intrinsic luminescence of a van der Waals heterostructure, made of a transition metal dichalcogenide monolayer stacked onto a few-layer graphene flake supported by an Au(111) substrate. Sharp emission lines arising from neutral, charged and localised excitons are reported. Their intensities an… ▽ More Low-temperature scanning tunneling microscopy is used to probe, with atomic-scale spatial resolution, the intrinsic luminescence of a van der Waals heterostructure, made of a transition metal dichalcogenide monolayer stacked onto a few-layer graphene flake supported by an Au(111) substrate. Sharp emission lines arising from neutral, charged and localised excitons are reported. Their intensities and emission energies vary as a function of the nanoscale environment of the van der Waals heterostructure, explaining the variability of the emission properties observed with diffraction-limited approaches. Our work paves the way towards understanding and control of optoelectronic phenomena in moiré superlattices with atomic-scale resolution. △ Less

Submitted 29 April, 2022; originally announced April 2022.

Comments: 14 pages, 4 figures, 3 supplementary figures

Journal ref: Nature Materials 22, 482 (2023)

Picosecond energy transfer in a transition metal dichalcogenide-graphene heterostructure revealed by transient Raman spectroscopy

Authors: Carino Ferrante, Giorgio Di Battista, Luis E. Parra López, Giovanni Batignani, Etienne Lorchat, Alessandra Virga, Stéphane Berciaud, Tullio Scopigno

Abstract: Intense light-matter interactions and unique structural and electrical properties make Van der Waals heterostructures composed by Graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunnelling transistors, flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics and quantum light emitting devices (QLEDs), bright a… ▽ More Intense light-matter interactions and unique structural and electrical properties make Van der Waals heterostructures composed by Graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunnelling transistors, flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics and quantum light emitting devices (QLEDs), bright and narrow-line emitters using minimal amounts of active absorber material. The performance of such devices is critically ruled by interlayer interactions which are still poorly understood in many respects. Specifically, two classes of coupling mechanisms have been proposed: charge transfer (CT) and energy transfer (ET), but their relative efficiency and the underlying physics is an open question. Here, building on a time resolved Raman scattering experiment, we determine the electronic temperature profile of Gr in response to TMD photo-excitation, tracking the picosecond dynamics of the G and 2D bands. Compelling evidence for a dominant role ET process accomplished within a characteristic time of ~ 4 ps is provided. Our results suggest the existence of an intermediate process between the observed picosecond ET and the generation of a net charge underlying the slower electric signals detected in optoelectronic applications. △ Less

Submitted 21 April, 2022; v1 submitted 14 January, 2021; originally announced January 2021.

Comments: 32 pages, 15 figures

Journal ref: Proceedings of the National Academy of Sciences 119.15 (2022): e2119726119

Single- and narrow-line photoluminescence in a boron nitride-supported MoSe$_2$/graphene heterostructure

Authors: Luis E. Parra López, Loïc Moczko, Joanna Wolff, Aditya Singh, Etienne Lorchat, Michelangelo Romeo, Takashi Taniguchi, Kenji Watanabe, Stéphane Berciaud

Abstract: Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting transition metal dichalcogenides (TMD) have attracted interest to design model 2D "donor-acceptor" systems and new optoelectronic components. Here, using of Rama… ▽ More Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting transition metal dichalcogenides (TMD) have attracted interest to design model 2D "donor-acceptor" systems and new optoelectronic components. Here, using of Raman scattering and photoluminescence spectroscopies, we report a comprehensive characterization of a molybedenum diselenide (MoSe$_2$) monolayer deposited onto hexagonal boron nitride (hBN) and capped by mono- and bilayer graphene. Along with the atomically flat hBN susbstrate, a single graphene epilayer is sufficient to passivate the MoSe$_2$ layer and provides a homogenous environment without the need for an extra cap** layer. As a result, we do not observe photo-induced do** in our heterostructure and the MoSe$_2$ excitonic linewidth gets as narrow as 1.6~meV, hence approaching the homogeneous limit. The semi-metallic graphene layer neutralizes the 2D semiconductor and enables picosecond non-radiative energy transfer that quenches radiative recombination from long-lived states. Hence, emission from the neutral band edge exciton largely dominates the photoluminescence spectrum of the MoSe$_2$/graphene heterostructure. Since this exciton has a picosecond radiative lifetime at low temperature, comparable with the energy transfer time, its low-temperature photoluminescence is only quenched by a factor of $3.3 \pm 1$ and $4.4 \pm 1$ in the presence of mono- and bilayer graphene, respectively. Finally, while our bare MoSe$_2$ on hBN exhibits negligible valley polarization at low temperature and under near-resonant excitation, we show that interfacing MoSe$_2$ with graphene yields a single-line emitter with degrees of valley polarization and coherence up to $\sim 15\,\%$. △ Less

Submitted 11 March, 2021; v1 submitted 5 November, 2020; originally announced November 2020.

Comments: version 3, 5 figures

Journal ref: Comptes Rendus. Physique 2021 (Recent advances in 2D material physics)

Many-body effects in suspended graphene probed through magneto-phonon resonances

Authors: Stéphane Berciaud, Marek Potemski, Clément Faugeras

Abstract: We make use of micro-magneto Raman scattering spectroscopy to probe magneto-phonon resonances (MPR) in suspended mono- to penta-layer graphene. MPR correspond to avoided crossings between zone-center optical phonons (G-mode) and optically-active inter Landau level (LL) transitions and provide a tool to perform LL spectroscopy at a fixed energy ($\approx 197~\rm{meV}$) set by the G-mode phonon. Usi… ▽ More We make use of micro-magneto Raman scattering spectroscopy to probe magneto-phonon resonances (MPR) in suspended mono- to penta-layer graphene. MPR correspond to avoided crossings between zone-center optical phonons (G-mode) and optically-active inter Landau level (LL) transitions and provide a tool to perform LL spectroscopy at a fixed energy ($\approx 197~\rm{meV}$) set by the G-mode phonon. Using a single-particle effective bilayer model, we readily extract the velocity parameter associated with each MPR. A single velocity parameter slightly above the bulk graphite value suffices to fit all MPR for $N\geq2$ layer systems. In contrast, in monolayer graphene, we find that the velocity parameter increases significantly from $(1.23\pm 0.01) \times 10^6~\mathrm{m.s^{-1}}$ up to $(1.45\pm0.02) \times 10^6~\mathrm{m.s^{-1}}$ as the first to third optically-active inter LL transition couple to the G-mode phonon. This result is understood as a signature of enhanced many-body effects in unscreened graphene. △ Less

Submitted 6 September, 2020; v1 submitted 15 July, 2020; originally announced July 2020.

Comments: 8 pages, 5 figures

Dynamically-enhanced strain in atomically thin resonators

Authors: Xin Zhang, Kevin Makles, Léo Colombier, Dominik Metten, Hicham Majjad, Pierre Verlot, Stéphane Berciaud

Abstract: Graphene and related two-dimensional (2D) materials associate remarkable mechanical, electronic, optical and phononic properties. As such, 2D materials are promising for hybrid systems that couple their elementary excitations (excitons, phonons) to their macroscopic mechanical modes. These built-in systems may yield enhanced strain-mediated coupling compared to bulkier architectures, e.g., compris… ▽ More Graphene and related two-dimensional (2D) materials associate remarkable mechanical, electronic, optical and phononic properties. As such, 2D materials are promising for hybrid systems that couple their elementary excitations (excitons, phonons) to their macroscopic mechanical modes. These built-in systems may yield enhanced strain-mediated coupling compared to bulkier architectures, e.g., comprising a single quantum emitter coupled to a nano-mechanical resonator. Here, using micro-Raman spectroscopy on pristine monolayer graphene drums, we demonstrate that the macroscopic flexural vibrations of graphene induce dynamical optical phonon softening. This softening is an unambiguous fingerprint of dynamically-induced tensile strain that reaches values up to $\mathbf{\approx 4 \times 10^{-4}}$ under strong non-linear driving. Such non-linearly enhanced strain exceeds the values predicted for harmonic vibrations with the same root mean square (RMS) amplitude by more than one order of magnitude. Our work holds promise for dynamical strain engineering and dynamical strain-mediated control of light-matter interactions in 2D materials and related heterostructures. △ Less

Submitted 5 November, 2020; v1 submitted 24 March, 2020; originally announced March 2020.

Comments: Main manuscript (figures 1 to 4) and SI file (supplementary figures S1 to S22; supplementary sections S1 to S11)

Journal ref: Nature Communications 11, 5526 (2020)

Filtering the photoluminescence spectra of atomically thin semiconductors with graphene

Authors: Etienne Lorchat, Luis E. Parra López, Cédric Robert, Delphine Lagarde, Guillaume Froehlicher, Takashi Taniguchi, Kenji Watanabe, Xavier Marie, Stéphane Berciaud

Abstract: Atomically thin semiconductors made from transition metal dichalcogenides (TMDs) are model systems for investigations of strong light-matter interactions and applications in nanophotonics, opto-electronics and valley-tronics. However, the photoluminescence spectra of TMD monolayers display a large number of features that are particularly challenging to decipher. On a practical level, monochromatic… ▽ More Atomically thin semiconductors made from transition metal dichalcogenides (TMDs) are model systems for investigations of strong light-matter interactions and applications in nanophotonics, opto-electronics and valley-tronics. However, the photoluminescence spectra of TMD monolayers display a large number of features that are particularly challenging to decipher. On a practical level, monochromatic TMD-based emitters would be beneficial for low-dimensional devices but this challenge is yet to be resolved. Here, we show that graphene, directly stacked onto TMD monolayers enables single and narrow-line photoluminescence arising solely from TMD neutral excitons. This filtering effect stems from complete neutralization of the TMD by graphene combined with selective non-radiative transfer of long-lived excitonic species to graphene. Our approach is applied to four tungsten and molybdenum-based TMDs and establishes TMD/graphene heterostructures as a unique set of opto-electronic building blocks, suitable for electroluminescent systems emitting visible and near-infrared photons at near THz rate with linewidths approaching the lifetime limit. △ Less

Submitted 5 November, 2020; v1 submitted 28 August, 2019; originally announced August 2019.

Comments: Main manuscript with 5 figures plus supplementary information file (including 9 supplementary sections and 14 supplementary figures)

Journal ref: Nature Nanotechnology 15, 283(2020)

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Authors: Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, Mathieu G. Silly, Noelle Gogneau, Fabrice Oehler, Stephane Collin, Julien Brault, Fausto Sirotti, François Bertran, Patrick Le Fèvre, Stéphane Berciaud, A. T Charlie Johnson, Emmanuel Lhuillier, Julien E. Rault, Abdelkarim Ouerghi

Abstract: Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray p… ▽ More Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Comments: 13 pages, 5 figures + SI 2 pages, 2 figures

Journal ref: Physical Review B 96, 115312 (2017)

Room Temperature Valley Polarization and Coherence in Transition Metal Dichalcogenide-Graphene van der Waals Heterostructures

Authors: Etienne Lorchat, Stefano Azzini, Thibault Chervy, Takashi Tanigushi, Kenji Watanabe, Thomas W. Ebbesen, Cyriaque Genet, Stéphane Berciaud

Abstract: Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and spin-valley locking in TMDs and (ii) exceptional electron and spin transport in graphene. The operation of such devices requires significant valley polarization… ▽ More Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and spin-valley locking in TMDs and (ii) exceptional electron and spin transport in graphene. The operation of such devices requires significant valley polarization and valley coherence, ideally up to room temperature. Here, using a comprehensive Mueller polarimetry analysis, we report \textit{artifact-free} room temperature degrees of valley polarization up to $40~\%$ and, remarkably, of valley coherence up to $20~\%$ in monolayer tungsten disulfide (WS$_2$)/graphene heterostructures. Valley contrasts have been particularly elusive in molybdenum diselenide (MoSe$_2$), even at cryogenic temperatures. Upon interfacing monolayer MoSe$_2$ with graphene, the room temperature degrees of valley polarization and coherence are as high as $14~\%$ and $20~\%$, respectively. Our results are discussed in light of recent reports of highly efficient interlayer coupling and exciton transfer in TMD/graphene heterostructures and hold promise for room temperature chiral light-matter interactions and coherent opto-valleytronic devices. △ Less

Submitted 18 April, 2018; originally announced April 2018.

Journal ref: ACS Photonics 5, 5047 (2018)

Rigid-layer Raman-active modes in $N$-layer Transition Metal Dichalcogenides: interlayer force constants and hyperspectral Raman imaging

Authors: Guillaume Froehlicher, Etienne Lorchat, Olivia Zill, Michelangelo Romeo, Stéphane Berciaud

Abstract: We report a comparative study of rigid layer Raman-active modes in $N$-layer transition metal dichalcogenides. Trigonal prismatic (2Hc, such as MoSe$_2$, MoTe$_2$, WS$_2$, WSe$_2$) and distorted octahedral (1T', such as ReS$_2$ and ReSe$_2$) phases are considered. The Raman-active in-plane interlayer shear modes and out-of-plane interlayer breathing modes appear as well-defined features with waven… ▽ More We report a comparative study of rigid layer Raman-active modes in $N$-layer transition metal dichalcogenides. Trigonal prismatic (2Hc, such as MoSe$_2$, MoTe$_2$, WS$_2$, WSe$_2$) and distorted octahedral (1T', such as ReS$_2$ and ReSe$_2$) phases are considered. The Raman-active in-plane interlayer shear modes and out-of-plane interlayer breathing modes appear as well-defined features with wavenumbers in the range 0-40~cm$^{-1}$. These rigid layer modes are well-described by an elementary linear chain model from which the interlayer force constants are readily extracted. Remarkably, these force constants are all found to be of the same order of magnitude. Finally, we show that the prominent interlayer shear and breathing mode features allow high-precision hyperspectral Raman imaging of $N-$layer domains within a given transition metal dichalcogenide flake. △ Less

Submitted 4 August, 2017; originally announced August 2017.

Charge versus energy transfer in atomically-thin graphene-transition metal dichalcogenide van der Waals heterostructures

Authors: Guillaume Froehlicher, Etienne Lorchat, Stéphane Berciaud

Abstract: Van der Waals heterostuctures, made from stacks of two-dimensional materials, exhibit unique light-matter interactions and are promising for novel optoelectronic devices. The performance of such devices is governed by near-field coupling through, e.g., interlayer charge and/or energy transfer. New concepts and experimental methodologies are needed to properly describe two-dimensional heterointerfa… ▽ More Van der Waals heterostuctures, made from stacks of two-dimensional materials, exhibit unique light-matter interactions and are promising for novel optoelectronic devices. The performance of such devices is governed by near-field coupling through, e.g., interlayer charge and/or energy transfer. New concepts and experimental methodologies are needed to properly describe two-dimensional heterointerfaces. Here, we report on interlayer charge and energy transfer in atomically thin metal (graphene)/semiconductor (transition metal dichalcogenide (TMD, here MoSe$_2$)) heterostructures using a combination of photoluminescence and Raman scattering spectroscopies. The photoluminescence intensity in graphene/MoSe$_2$ is quenched by more than two orders of magnitude and rises linearly with the photon flux, demonstrating a drastically shortened ($\sim 1~\tr{ps}$) room temperature MoSe$_2$ exciton lifetime. Key complementary insights are provided from analysis of the graphene and MoSe$_2$ Raman modes, which reveals net photoinduced electron transfer from MoSe$_2$ to graphene and hole accumulation in MoSe$_2$. Remarkably, the steady state Fermi energy of graphene saturates at $290\pm 15~\tr{meV}$ above the Dirac point. This behavior is observed both in ambient air and in vacuum and is discussed in terms of band offsets and environmental effects. In this saturation regime, balanced photoinduced flows of electrons and holes may transfer to graphene, a mechanism that effectively leads to energy transfer. Using a broad range of photon fluxes and diverse environmental conditions, we find that the presence of net photoinduced charge transfer has no measurable impact on the near-unity photoluminescence quenching efficiency in graphene/MoSe$_2$. This absence of correlation strongly suggests that energy transfer to graphene is the dominant interlayer coupling mechanism between atomically-thin TMDs and graphene. △ Less

Submitted 5 December, 2017; v1 submitted 15 March, 2017; originally announced March 2017.

Comments: Physical Review X, in press. 14 pages, 7 figures, with supplemental material

Journal ref: Phys. Rev. X 8, 011007 (2018)

Conductance oscillations in graphene/nanoclusters hybrid material: towards large area single electron devices

Authors: Florian Godel, Louis Donald Notemgnou Mouafo, Guillaume Froehlicher, Bernard Doudin, Stephane Berciaud, Yves Henry, Jean-Francois Dayen, David Halley

Abstract: Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb oscillations is observed for a record junction area containing millions of metal islands. Such hybrid materials offer new prospects for single-electron electronics. Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb oscillations is observed for a record junction area containing millions of metal islands. Such hybrid materials offer new prospects for single-electron electronics. △ Less

Submitted 28 February, 2017; originally announced March 2017.

Journal ref: First published 21 November 2016 in Advanced Materials

Quantum interference effects in resonant Raman spectroscopy of single- and triple-layer MoTe$_2$ from first principles

Authors: Henrique P. C. Miranda, Sven Reichardt, Guillaume Froehlicher, Alejandro Molina-Sánchez, Stéphane Berciaud, Ludger Wirtz

Abstract: We present a combined experimental and theoretical study of resonant Raman spectroscopy in single- and triple-layer MoTe$_2$. Raman intensities are computed entirely from first principles by calculating finite differences of the dielectric susceptibility. In our analysis, we investigate the role of quantum interference effects and the electron-phonon coupling. With this method, we explain the expe… ▽ More We present a combined experimental and theoretical study of resonant Raman spectroscopy in single- and triple-layer MoTe$_2$. Raman intensities are computed entirely from first principles by calculating finite differences of the dielectric susceptibility. In our analysis, we investigate the role of quantum interference effects and the electron-phonon coupling. With this method, we explain the experimentally observed intensity inversion of the $A^\prime_1$ vibrational modes in triple-layer MoTe2 with increasing laser photon energy. Finally, we show that a quantitative comparison with experimental data requires the proper inclusion of excitonic effects. △ Less

Submitted 17 February, 2017; originally announced February 2017.

Comments: Main Text (5 Figures, 1 Tables) + Supporting Information (6 Figures)

Spin-momentum locked polariton transport in the chiral strong coupling regime

Authors: Thibault Chervy, Stefano Azzini, Etienne Lorchat, Shaojun Wang, Yuri Gorodetski, James A. Hutchison, Stéphane Berciaud, Thomas W. Ebbesen, Cyriaque Genet

Abstract: We demonstrate room temperature chiral strong coupling of valley excitons in a transition metal dichalcogenide monolayer with spin-momentum locked surface plasmons. In this regime, we measure spin-selective excitation of directional flows of polaritons. Operating under strong light-matter coupling, our platform yields robust intervalley contrasts and coherences, enabling us to generate coherent su… ▽ More We demonstrate room temperature chiral strong coupling of valley excitons in a transition metal dichalcogenide monolayer with spin-momentum locked surface plasmons. In this regime, we measure spin-selective excitation of directional flows of polaritons. Operating under strong light-matter coupling, our platform yields robust intervalley contrasts and coherences, enabling us to generate coherent superpositions of chiral polaritons propagating in opposite directions. Our results reveal the rich and easy to implement possibilities offered by our system in the context of chiral optical networks. △ Less

Submitted 8 September, 2017; v1 submitted 27 January, 2017; originally announced January 2017.

Comments: 5 pages, 4 figures, plus Supporting Information

Electrically-driven vibronic spectroscopy with sub-molecular resolution

Authors: Benjamin Doppagne, Michael C. Chong, Etienne Lorchat, Stéphane Berciaud, Michelangelo Romeo, Hervé Bulou, Alex Boeglin, Fabrice Scheurer, Guillaume Schull

Abstract: A scanning tunneling microscope is used to generate the electroluminescence of phthalocyanine molecules deposited on NaCl/Ag(111). Photon spectra reveal an intense emission line at 1.9 eV that corresponds to the fluorescence of the molecules, and a series of weaker red-shifted lines. Based on a comparison with Raman spectra acquired on macroscopic molecular crystals, these spectroscopic features c… ▽ More A scanning tunneling microscope is used to generate the electroluminescence of phthalocyanine molecules deposited on NaCl/Ag(111). Photon spectra reveal an intense emission line at 1.9 eV that corresponds to the fluorescence of the molecules, and a series of weaker red-shifted lines. Based on a comparison with Raman spectra acquired on macroscopic molecular crystals, these spectroscopic features can be associated to the vibrational modes of the molecules and provide a detailed chemical fingerprint of the probed species. Maps of the vibronic features reveal sub- molecularly-resolved structures whose patterns are related to the symmetry of the probed vibrational modes. △ Less

Submitted 14 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. Lett. 118, 127401 (2017)

Monitoring Electrostatically-Induced Deflection, Strain and Do** in Suspended Graphene using Raman Spectroscopy

Authors: Dominik Metten, Guillaume Froehlicher, Stéphane Berciaud

Abstract: Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a layered structure, the intensity of the Raman G- and 2D-mode features of graphene are strongly modulated by optical interference effects and allow an accurate determi… ▽ More Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a layered structure, the intensity of the Raman G- and 2D-mode features of graphene are strongly modulated by optical interference effects and allow an accurate determination of the electrostatically-induced membrane deflection, up to irreversible collapse. The membrane deflection is successfully described by an electromechanical model, which we also use to provide useful guidelines for device engineering. In addition, electrostatically-induced tensile strain is determined by examining the softening of the Raman features. Due to a small residual charge inhomogeneity $\sim 5\times 10^{10}~\rm cm^{-2}$, we find that non-adiabatic anomalous phonon softening is negligible compared to strain-induced phonon softening. These results open perspectives for innovative Raman scattering-based readout schemes in two-dimensional nanoreso △ Less

Submitted 19 August, 2016; originally announced August 2016.

Journal ref: 2D Materials 4, 014004 (2017)

Direct versus indirect band gap emission and exciton-exciton annihilation in atomically thin molybdenum ditelluride (MoTe$_2$)

Authors: Guillaume Froehlicher, Etienne Lorchat, Stéphane Berciaud

Abstract: We probe the room temperature photoluminescence of $N$-layer molybdenum ditelluride (MoTe$_2$) in the continuous wave (cw) regime. The photoluminescence quantum yield of monolayer MoTe$_2$ is three times larger than in bilayer MoTe$_2$ and forty times greater than in the bulk limit. Mono- and bilayer MoTe$_2$ display almost symmetric emission lines at $1.10~\rm eV$ and $1.07~\rm eV$, respectively,… ▽ More We probe the room temperature photoluminescence of $N$-layer molybdenum ditelluride (MoTe$_2$) in the continuous wave (cw) regime. The photoluminescence quantum yield of monolayer MoTe$_2$ is three times larger than in bilayer MoTe$_2$ and forty times greater than in the bulk limit. Mono- and bilayer MoTe$_2$ display almost symmetric emission lines at $1.10~\rm eV$ and $1.07~\rm eV$, respectively, which predominantly arise from direct radiative recombination of the A exciton. In contrast, $N\geq3-$layer MoTe$_2$ exhibits a much reduced photoluminescence quantum yield and a broader, redshifted and seemingly bimodal photoluminescence spectrum. The low- and high-energy contributions are attributed to emission from the indirect and direct optical band gaps, respectively. Bulk MoTe$_2$ displays a broad emission line with a dominant contribution at 0.94~eV that is assigned to emission from the indirect optical band gap. As compared to related systems (such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$), the smaller energy difference between the monolayer direct optical band gap and the bulk indirect optical band gap leads to a smoother increase of the photoluminescence quantum yield as $N$ decreases. In addition, we study the evolution of the photoluminescence intensity in monolayer MoTe$_2$ as a function of the exciton formation rate $W_\mathrm{abs}$ up to $3.6\times 10^{22}~\rm{cm}^{-2} s^{-1}$. The lineshape of the photoluminescence spectrum remains largely independent of $W_\mathrm{abs}$, whereas the photoluminescence intensity grows sub-linearly above $W_\mathrm{abs}\sim 10^{21}~\rm cm^{-2} s^{-1}$. This behavior is assigned to exciton-exciton annihilation and is well-captured by an elementary rate equation model. △ Less

Submitted 19 August, 2016; v1 submitted 9 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. B 94, 085429 (2016)

Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in $N$-layer ReSe$_2$ and ReS$_2$

Authors: Etienne Lorchat, Guillaume Froehlicher, Stéphane Berciaud

Abstract: We investigate the interlayer phonon modes in $N$-layer rhenium diselenide (ReSe$_2$) and rhenium disulfide (ReS$_2$) by means of ultralow-frequency micro-Raman spectroscopy. These transition metal dichalcogenides exhibit a stable distorted octahedral (1T') phase with significant in-plane anisotropy, leading to sizable splitting of the (in-plane) layer shear modes. The fan-diagrams associated with… ▽ More We investigate the interlayer phonon modes in $N$-layer rhenium diselenide (ReSe$_2$) and rhenium disulfide (ReS$_2$) by means of ultralow-frequency micro-Raman spectroscopy. These transition metal dichalcogenides exhibit a stable distorted octahedral (1T') phase with significant in-plane anisotropy, leading to sizable splitting of the (in-plane) layer shear modes. The fan-diagrams associated with the measured frequencies of the interlayer shear modes and the (out-of-plane) interlayer breathing modes are perfectly described by a finite linear chain model and allow the determination of the interlayer force constants. Nearly identical values are found for ReSe$_2$ and ReS$_2$. The latter are appreciably smaller than but on the same order of magnitude as the interlayer force constants reported in graphite and in trigonal prismatic (2Hc) transition metal dichalcogenides (such as MoS$_2$, MoSe$_2$, MoTe$_2$, WS$_2$, WSe$_2$), demonstrating the importance of van der Waals interactions in $N$-layer ReSe$_2$ and ReS$_2$. In-plane anisotropy results in a complex angular dependence of the intensity of all Raman modes, which can be empirically utilized to determine the crystal orientation. However, we also demonstrate that the angular dependence of the Raman response drastically depends on the incoming photon energy, shedding light on the importance of resonant exciton-phonon coupling in ReSe$_2$ and ReS$_2$. △ Less

Submitted 9 February, 2016; v1 submitted 11 December, 2015; originally announced December 2015.

Unified description of the optical phonon modes in $N$-layer MoTe$_2$

Authors: Guillaume Froehlicher, Etienne Lorchat, François Fernique, Chaitanya Joshi, Alejandro Molina-Sánchez, Ludger Wirtz, Stéphane Berciaud

Abstract: $N$-layer transition metal dichalcogenides provide a unique platform to investigate the evolution of the physical properties between the bulk (three dimensional) and monolayer (quasi two-dimensional) limits. Here, using high-resolution micro-Raman spectroscopy, we report a unified experimental description of the $Γ$-point optical phonons in $N$-layer $2H$-molybdenum ditelluride (MoTe$_2… ▽ More $N$-layer transition metal dichalcogenides provide a unique platform to investigate the evolution of the physical properties between the bulk (three dimensional) and monolayer (quasi two-dimensional) limits. Here, using high-resolution micro-Raman spectroscopy, we report a unified experimental description of the $Γ$-point optical phonons in $N$-layer $2H$-molybdenum ditelluride (MoTe$_2$). We observe a series of $N$-dependent low-frequency interlayer shear and breathing modes (below $40~\rm cm^{-1}$, denoted LSM and LBM) and well-defined Davydov splittings of the mid-frequency modes (in the range $100-200~\rm cm^{-1}$, denoted iX and oX), which solely involve displacements of the chalcogen atoms. In contrast, the high-frequency modes (in the range $200-300~\rm cm^{-1}$, denoted iMX and oMX), arising from displacements of both the metal and chalcogen atoms, exhibit considerably reduced splittings. The manifold of phonon modes associated with the in-plane and out-of-plane displacements are quantitatively described by a force constant model, including interactions up to the second nearest neighbor and surface effects as fitting parameters. The splittings for the iX and oX modes observed in $N$-layer crystals are directly correlated to the corresponding bulk Davydov splittings between the $E_{2u}/E_{1g}$ and $B_{1u}/A_{1g}$ modes, respectively, and provide a measurement of the frequencies of the bulk silent $E_{2u}$ and $B_{1u}$ optical phonon modes. Our analysis could readily be generalized to other layered crystals. △ Less

Submitted 28 September, 2015; v1 submitted 9 September, 2015; originally announced September 2015.

Comments: Main Text (5 Figures, 2 Tables) + Supporting Information (12 Figures)

Journal ref: Nano Letters 15, 6481 (2015)

Raman Spectroscopy of Electrochemically-Gated Graphene Transistors: Geometrical Capacitance, Electron-Phonon, Electron-Electron, and Electron-Defect Scattering

Authors: Guillaume Froehlicher, Stéphane Berciaud

Abstract: We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements, allowing a quantitative analysis of the frequency, linewidth and integrated intensity of the main Raman features of graphene. The anomalous behavior observed f… ▽ More We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements, allowing a quantitative analysis of the frequency, linewidth and integrated intensity of the main Raman features of graphene. The anomalous behavior observed for the G-mode phonon is in very good agreement with theoretical predictions and provides a measurement of the electron-phonon coupling constant for zone-center ($Γ$ point) optical phonons. In addition, the decrease of the integrated intensity of the 2D-mode feature with increasing do**, makes it possible to determine the electron-phonon coupling constant for near zone-edge (K and K' points) optical phonons. We find that the electron-phonon coupling strength at $Γ$ is five times weaker than at K (K'), in very good agreement with a direct measurement of the ratio of the integrated intensities of the resonant intra- (2D') and inter-valley (2D) Raman features. We also show that electrochemical reactions, occurring at large gate biases, can be harnessed to efficiently create defects in graphene, with concentrations up to approximately $1.4\times 10^{12}~\rm cm^{-2}$. At such defect concentrations, we estimate that the electron-defect scattering rate remains much smaller than the electron-phonon scattering rate. The evolution of the G- and 2D-mode features upon do** remain unaffected by the presence of defects and the do** dependence of the D mode closely follows that of its two-phonon (2D mode) overtone. Finally, the linewidth and frequency of the G-mode phonon as well as the frequencies of the G- and 2D-mode phonons in doped graphene follow sample-independent correlations that can be utilized for accurate estimations of the charge carrier density. △ Less

Submitted 16 April, 2015; v1 submitted 24 February, 2015; originally announced February 2015.

Comments: 18 pages, 14 figures, 1 table

Journal ref: Phys. Rev. B 91, 205413 (2015)

Distance Dependence of the Energy Transfer Rate From a Single Semiconductor Nanostructure to Graphene

Authors: François Federspiel, Guillaume Froehlicher, Michel Nasilowski, Silvia Pedetti, Ather Mahmood, Bernard Doudin, Serin Park, Jeong-O Lee, David Halley, Benoît Dubertret, Pierre Gilliot, Stéphane Berciaud

Abstract: The near-field Coulomb interaction between a nano-emitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, i) zero-dimensional CdSe/CdS nanocrystals and ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing… ▽ More The near-field Coulomb interaction between a nano-emitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, i) zero-dimensional CdSe/CdS nanocrystals and ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing distances $d$, the energy transfer rate from individual nanocrystals to graphene decays as $1/d^4$. In contrast, the distance dependence of the energy transfer rate from a two-dimensional nanoplatelet to graphene deviates from a simple power law, but is well described by a theoretical model, which considers a thermal distribution of free excitons in a two-dimensional quantum well. Our results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale. △ Less

Submitted 14 January, 2015; originally announced January 2015.

Comments: Main text (+ 5 figures) and Supporting Information (+ 7 figures)

Landau level spectroscopy of electron-electron interactions in graphene

Authors: C. Faugeras, S. Berciaud, P. Leszczynski, Y. Henni, K. Nogajewski, M. Orlita, T. Taniguchi, K. Watanabe, C. Forsythe, P. Kim, R. Jalil, A. K. Geim, D. M. Basko, M. Potemski

Abstract: We present magneto-Raman scattering studies of electronic inter Landau level excitations in quasi-neutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle p… ▽ More We present magneto-Raman scattering studies of electronic inter Landau level excitations in quasi-neutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle picture of non-interacting massless Dirac electrons, but is accounted for by theory when the effect of electron-electron interaction is taken into account. Raman active, zero-momentum inter Landau level excitations in graphene are sensitive to electron-electron interactions due to the non-applicability of the Kohn theorem in this system, with a clearly non-parabolic dispersion relation. △ Less

Submitted 29 November, 2014; originally announced December 2014.

Comments: 5+2 pages, 2 figures

Journal ref: Phys. Rev. Lett. 114, 126804 (2015)

All-Optical Blister Test of Suspended Graphene Using Micro-Raman Spectroscopy

Authors: Dominik Metten, François Federspiel, Michelangelo Romeo, Stéphane Berciaud

Abstract: We report a comprehensive micro-Raman study of a pressurized suspended graphene membrane that hermetically seals a circular pit, etched in a Si/SiO$_2$ substrate. Placing the sample under a uniform pressure load results in bulging of the graphene membrane and subsequent softening of the main Raman features, due to tensile strain. In such a microcavity, the intensity of the Raman features depends v… ▽ More We report a comprehensive micro-Raman study of a pressurized suspended graphene membrane that hermetically seals a circular pit, etched in a Si/SiO$_2$ substrate. Placing the sample under a uniform pressure load results in bulging of the graphene membrane and subsequent softening of the main Raman features, due to tensile strain. In such a microcavity, the intensity of the Raman features depends very sensitively on the distance between the graphene membrane and the Si substrate, which acts as the bottom mirror of the cavity. Thus, a spatially resolved analysis of the intensity of the G- and 2D-mode features as a function of the pressure load permits a direct reconstruction of the blister profile. An average strain is then deduced at each pressure load, and Grüneisen parameters of $1.8\pm0.2$ and $2.4\pm0.2$ are determined for the Raman G and 2D modes, respectively. In addition, the measured blister height is proportional to the cubic root of the pressure load, as predicted theoretically. The validation of this scaling provides a direct and accurate determination the Young's modulus of graphene with a purely optical, hence contactless and minimally invasive, approach. We find a Young's modulus of $(1.05\pm 0.10) \rm TPa$ for monolayer graphene, in a perfect match with previous nanoindentation measurements. This all-optical methodology opens avenues for pressure sensing using graphene and could readily be adapted to other emerging two-dimensional materials and nanoresonators. △ Less

Submitted 12 November, 2014; v1 submitted 7 July, 2014; originally announced July 2014.

Comments: Manuscript File (11 pages, 7 figures) and Supplemental Material (6 pages, 9 figures)

Journal ref: Phys. Rev. Applied 2, 054008 (2014)

Probing electronic excitations in mono- to pentalayer graphene by micro-magneto-Raman spectroscopy

Authors: Stéphane Berciaud, Marek Potemski, Clément Faugeras

Abstract: We probe electronic excitations between Landau levels in freestanding $N-$layer graphene over a broad energy range, with unprecedented spectral and spatial resolution, using micro-magneto Raman scattering spectroscopy. A characteristic evolution of electronic bands in up to five Bernal-stacked graphene layers is evidenced and shown to remarkably follow a simple theoretical approach, based on an ef… ▽ More We probe electronic excitations between Landau levels in freestanding $N-$layer graphene over a broad energy range, with unprecedented spectral and spatial resolution, using micro-magneto Raman scattering spectroscopy. A characteristic evolution of electronic bands in up to five Bernal-stacked graphene layers is evidenced and shown to remarkably follow a simple theoretical approach, based on an effective bilayer model. $(N>3)$-layer graphene appear as appealing candidates in the quest for novel phenomena, particularly in the quantum Hall effect regime. Our work paves the way towards minimally-invasive investigations of magneto-excitons in other emerging low-dimensional systems, with a spatial resolution down to 1$~μ$m. △ Less

Submitted 5 July, 2014; v1 submitted 25 June, 2014; originally announced June 2014.

Comments: to appear in Nano Letters

Journal ref: Nano Letters, 14, 4548 (2014)

Tunable electronic correlation effects in nanotube-light interactions

Authors: Yuhei Miyauchi, Zhengyi Zhang, Mitsuhide Takekoshi, Yuh Tomio, Hidekatsu Suzuura, Vasili Perebeinos, Vikram V. Deshpande, Chenguang Lu, Stéphane Berciaud, Philip Kim, James Hone, Tony F. Heinz

Abstract: Electronic many-body correlation effects in one-dimensional (1D) systems such as carbon nanotubes have been predicted to modify strongly the nature of photoexcited states. Here we directly probe this effect using broadband elastic light scattering from individual suspended carbon nanotubes under electrostatic gating conditions. We observe significant shifts in optical transition energies, as well… ▽ More Electronic many-body correlation effects in one-dimensional (1D) systems such as carbon nanotubes have been predicted to modify strongly the nature of photoexcited states. Here we directly probe this effect using broadband elastic light scattering from individual suspended carbon nanotubes under electrostatic gating conditions. We observe significant shifts in optical transition energies, as well as line broadening, as the carrier density is increased. The results demonstrate the differing role of screening of many-body electronic interactions on the macroscopic and microscopic length scales, a feature inherent to quasi-1D systems. Our findings further demonstrate the possibility of electrical tuning of optical transitions and provide a basis for understanding of various optical phenomena in carbon nanotubes and other quasi-1D systems in the presence of charge carrier do**. △ Less

Submitted 2 September, 2013; v1 submitted 25 August, 2013; originally announced August 2013.

Comments: 18 pages, 4 figures, plus supplemental material of 11 pages and 3 figures

Journal ref: Phys. Rev. B 92, 205407 (2015)

Intrinsic lineshape of the Raman 2D-mode in freestanding graphene monolayers

Authors: Stéphane Berciaud, Xianglong Li, Han Htoon, Louis E. Brus, Stephen K. Doorn, Tony F. Heinz

Abstract: We report a comprehensive study of the two-phonon inter-valley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode lineshapes in freestanding graphene. For photon energies in the range $1.53 \rm eV - 2.71 \rm eV$, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for… ▽ More We report a comprehensive study of the two-phonon inter-valley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode lineshapes in freestanding graphene. For photon energies in the range $1.53 \rm eV - 2.71 \rm eV$, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for supported monolayers. The transition between the freestanding and supported cases is mimicked by electrostatically do** freestanding graphene at carrier densities above $2\times 10^{11} \rm cm^{-2}$. This result quantitatively demonstrates that low levels of charging can obscure the intrinsically bimodal 2D-mode lineshape of monolayer graphene, which can be utilized as a signature of a quasi-neutral sample. In pristine freestanding graphene, we observe a broadening of the 2D-mode feature with decreasing photon energy that cannot be rationalized using a simple one-dimensional model based on resonant \textit{inner} and \textit{outer} processes. This indicates that phonon wavevectors away from the high-symmetry lines of the Brillouin zone must contribute to the 2D-mode, so that a full two-dimensional calculation is required to properly describe multiphonon-resonant Raman processes. △ Less

Submitted 30 May, 2013; originally announced May 2013.

Journal ref: Nano Lett., 13, 3517 (2013)

Biexciton, single carrier, and trion generation dynamics in single-walled carbon nanotubes

Authors: Bertrand Yuma, Stéphane Berciaud, Jean Besbas, Jonah Shaver, Silvia M. Santos, Saunab Gosh, R. Bruce Weisman, Laurent Cognet, Mathieu Gallart, Marc Ziegler, Bernd Hönerlage, Brahim Lounis, Pierre Gilliot

Abstract: We present a study of free carrier photo-generation and multi-carrier bound states, such as biexcitons and trions (ionized excitons), in semiconducting single-walled carbon nanotubes. Pump-and-probe measurements performed with fs pulses reveal the effects of strong Coulomb interactions between carriers on their dynamics. Biexciton formation by optical transition from exciton population results in… ▽ More We present a study of free carrier photo-generation and multi-carrier bound states, such as biexcitons and trions (ionized excitons), in semiconducting single-walled carbon nanotubes. Pump-and-probe measurements performed with fs pulses reveal the effects of strong Coulomb interactions between carriers on their dynamics. Biexciton formation by optical transition from exciton population results in an induced absorption line (binding energy 130 meV). Exciton-exciton annihilation process is shown to evolve at high densities towards an Auger process that can expel carriers from nanotubes. The remaining carriers give rise to an induced absorption due to trion formation (binding energy 190 meV). These features show the dynamics of exciton and free carriers populations. △ Less

Submitted 6 February, 2013; originally announced February 2013.

Comments: 9 Pages, 7 figures

Journal ref: Phys. Rev. B 87, 205412 (2013)

Observation of Electronic Raman Scattering in Metallic Carbon Nanotubes

Authors: Hootan Farhat, Stéphane berciaud, Martin Kalbac, Riichiro Saito, Tony F. Heinz, Mildred S. Dresselhaus, **g Kong

Abstract: We present experimental measurements of the electronic contribution to the Raman spectra of individual metallic single-walled carbon nanotubes (MSWNTs). Photoexcited carriers are inelastically scattered by a continuum of low-energy electron-hole pairs created across the graphenelike linear electronic subbands of the MSWNTs. The optical resonances in MSWNTs give rise to well-defined electronic Rama… ▽ More We present experimental measurements of the electronic contribution to the Raman spectra of individual metallic single-walled carbon nanotubes (MSWNTs). Photoexcited carriers are inelastically scattered by a continuum of low-energy electron-hole pairs created across the graphenelike linear electronic subbands of the MSWNTs. The optical resonances in MSWNTs give rise to well-defined electronic Raman peaks. This resonant electronic Raman scattering is a unique feature of the electronic structure of these one-dimensional quasimetals. △ Less

Submitted 19 October, 2011; originally announced October 2011.

Journal ref: Phys. Rev. Lett. 107, 157401 (2011)

High-resolution spatial map** of the temperature distribution of a Joule self-heated graphene nanoribbon

Authors: Young-Jun Yu, Melinda Y. Han, Stephane Berciaud, Alexandru B. Georgescu, Tony F. Heinz, Louis E. Brus, Kwang S. Kim, Philip Kim

Abstract: We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The SThM probe is calibrated using the Raman G mode Stokes/anti-Stokes intensity ratio as a function of electric power applied to the GNR devices. From a spatial map of the temperature distribution, heat dissipation and tra… ▽ More We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The SThM probe is calibrated using the Raman G mode Stokes/anti-Stokes intensity ratio as a function of electric power applied to the GNR devices. From a spatial map of the temperature distribution, heat dissipation and transport pathways are investigated. By combining SThM and scanning gate microscopy data from a defected GNR, we observe hot spot formation at well-defined, localized sites. △ Less

Submitted 19 October, 2011; v1 submitted 13 October, 2011; originally announced October 2011.

Comments: 4 pages, 3 figures, accepted on App. Phys. Lett

All-optical trion generation in single walled carbon nanotubes

Authors: Silvia Santos, Bertrand Yuma, Stéphane Berciaud, Jonah Shaver, Mathieu Gallart, Pierre Gilliot, Laurent Cognet, Brahim Lounis

Abstract: We present evidence of all optical trion generation and emission in undoped single walled carbon nanotubes (SWCNTs). Luminescence spectra, recorded on individual SWCNTs over a large CW excitation intensity range, show trion emission peaks red-shifted with respect to the bright exciton peak. Clear chirality dependence is observed for 22 separate SWCNT species, allowing for determination of electron… ▽ More We present evidence of all optical trion generation and emission in undoped single walled carbon nanotubes (SWCNTs). Luminescence spectra, recorded on individual SWCNTs over a large CW excitation intensity range, show trion emission peaks red-shifted with respect to the bright exciton peak. Clear chirality dependence is observed for 22 separate SWCNT species, allowing for determination of electron-hole exchange interaction and trion binding energy contributions. Luminescence data together with ultrafast pump probe experiments on chirality sorted bulk samples suggest that exciton-exciton annihilation processes generate dissociated carriers that allow for trion creation upon a subsequent photon absorption event. △ Less

Submitted 24 June, 2011; originally announced June 2011.

Comments: 13 pages, 4 figures

Temperature dependence of the anharmonic decay of optical phonons in carbon nanotubes and graphite

Authors: Ioannis Chatzakis, Hugen Yan, Daohua Song, Stéphane Berciaud, Tony F. Heinz

Abstract: We report on the temperature dependence of the anharmonic decay rate of zone-center (G mode) optical phonons in both single-walled carbon nanotubes and graphite. The measurements are performed using a pump-probe Raman scattering scheme with femtosecond laser pulses. For nanotubes, measured over a temperature range of 6 K-700 K, we observe little temperature dependence of the decay rate below room… ▽ More We report on the temperature dependence of the anharmonic decay rate of zone-center (G mode) optical phonons in both single-walled carbon nanotubes and graphite. The measurements are performed using a pump-probe Raman scattering scheme with femtosecond laser pulses. For nanotubes, measured over a temperature range of 6 K-700 K, we observe little temperature dependence of the decay rate below room temperature. Above 300 K, the decay rate increases from 0.8 to 1.7 ps-1. The decay rates observed for graphite range from 0.5 to 0.8 ps-1 for temperatures from 300 K-700 K. We compare the behavior observed in carbon nanotubes and graphite and discuss the implications of our results for the mechanism of the anharmonic decay of optical phonons in both systems. △ Less

Submitted 7 June, 2011; originally announced June 2011.

Comments: 21 pages, 3 figures

Journal ref: Physical Review B 83, 205411 (2011)

Atmospheric Oxygen Binding and Hole Do** in Deformed Graphene on a SiO2 Substrate

Authors: Sunmin Ryu, Li Liu, Stephane Berciaud, Young-Jun Yu, Haitao Liu, Philip Kim, George W. Flynn, Louis E. Brus

Abstract: Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole do** of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band represents charge do** and not compressive strain. Two independent factors control the do**: (1) the degree of graphene coupling to the substrate, and (2) exposur… ▽ More Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole do** of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band represents charge do** and not compressive strain. Two independent factors control the do**: (1) the degree of graphene coupling to the substrate, and (2) exposure to oxygen and moisture. Thermal annealing induces a pronounced structural distortion due to close coupling to SiO2 and activates the ability of diatomic oxygen to accept charge from graphene. Gas flow experiments show that dry oxygen reversibly dopes graphene; do** becomes stronger and more irreversible in the presence of moisture and over long periods of time. We propose that oxygen molecular anions are stabilized by water solvation and electrostatic binding to the silicon dioxide surface. △ Less

Submitted 13 November, 2010; originally announced November 2010.

Comments: 17 pages, 5 figures

Journal ref: Nano Letters 10, 4944 (2010)

Electron and optical phonon temperatures in electrically biased graphene

Authors: Stéphane Berciaud, Melinda Y. Han, Louis E. Brus, Philip Kim, Tony F. Heinz

Abstract: We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of current flow, we obtain independent information on the energy distribution of the electrons and phonons. The electrons and holes contributing to light emission are… ▽ More We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of current flow, we obtain independent information on the energy distribution of the electrons and phonons. The electrons and holes contributing to light emission are found to obey a thermal distribution, with temperatures in excess of 1500 K in the regime of current saturation. The zone-center optical phonons are also highly excited and are found to be in equilibrium with the electrons. For a given optical phonon temperature, the anharmonic downshift of the Raman G-mode is smaller than expected under equilibrium conditions, suggesting that the electrons and high-energy optical phonons are not fully equilibrated with all of the phonon modes. △ Less

Submitted 31 March, 2010; originally announced March 2010.

Journal ref: Phys. Rev. Lett. 104, 227401 (2010)

Energy Transfer from Individual Semiconductor Nanocrystals to Graphene

Authors: Zheyuan Chen, Stéphane Berciaud, Colin Nuckolls, Tony F. Heinz, Louis E. Brus

Abstract: Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/Z… ▽ More Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/ZnS nanocrystals in contact with single- and few-layer graphene sheets. The rate of energy transfer is determined from the strong quenching of the nanocrystal fluorescence. For single-layer graphene, we find a rate of ~ 4ns-1, in agreement with a model based on the dipole approximation and a tight-binding description of graphene. This rate increases significantly with the number of graphene layers, before approaching the bulk limit. Our study quantifies energy transfer to and fluorescence quenching by graphene, critical properties for novel applications in photovoltaic devices and as a molecular ruler. △ Less

Submitted 15 March, 2010; originally announced March 2010.

Journal ref: ACS Nano 4, 2964 (2010)

Excitons and high-order optical transitions in individual carbon nanotubes

Authors: Stephane Berciaud, Christophe Voisin, Hugen Yan, Bhupesh Chandra, Robert Caldwell, Yuyao Shan, Louis E. Brus, James Hone, Tony F. Heinz

Abstract: We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reveals that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are… ▽ More We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reveals that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are observed at ~200 meV above the third and fourth optical transitions. These features are ascribed to exciton-phonon bound states. Such side-bands are not apparent for metallic nanotubes,as expected from the reduced strength of excitonic interactions in these systems. △ Less

Submitted 25 January, 2010; originally announced January 2010.

Journal ref: Phys. Rev. B 81, 041414(R) (2010)

Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers

Authors: Stephane Berciaud, Sunmin Ryu, Louis E. Brus, Tony F. Heinz

Abstract: The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman spectroscopy of the G-, D-, and 2D-phonon modes. The G-mode phonons exhibit reduced energies (1580 cm-1) and increased widths (14 cm-1) compared to the response of gr… ▽ More The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman spectroscopy of the G-, D-, and 2D-phonon modes. The G-mode phonons exhibit reduced energies (1580 cm-1) and increased widths (14 cm-1) compared to the response of graphene monolayers supported on the SiO2 covered substrate. From analysis of the G-mode Raman spectra, we deduce that the free-standing graphene monolayers are essentially undoped, with an upper bound of 2x10^11 cm-2 for the residual carrier concentration. On the supported regions, significantly higher and spatially inhomogeneous do** is observed. The free-standing graphene monolayers show little local disorder, based on the very weak Raman D-mode response. The two-phonon 2D mode of the free-standing graphene monolayers is downshifted in frequency compared to that of the supported region of the samples and exhibits a narrowed, positively skewed line shape. △ Less

Submitted 6 January, 2009; originally announced January 2009.

Luminescence Decay and the Absorption Cross-Section of Individual Single-Walled Carbon Nanotubes

Authors: Stephane Berciaud, Laurent Cognet, Brahim Lounis

Abstract: The absorption cross section of highly luminescent individual single-walled carbon nanotubes is determined using time-resolved and cw luminescence spectroscopy. A mean value of 1x10-17 cm2 per carbon atom is obtained for (6,5) tubes excited at their second optical transition, and corroborated by single tube photothermal absorption measurements. Biexponential luminescence decays are systematicall… ▽ More The absorption cross section of highly luminescent individual single-walled carbon nanotubes is determined using time-resolved and cw luminescence spectroscopy. A mean value of 1x10-17 cm2 per carbon atom is obtained for (6,5) tubes excited at their second optical transition, and corroborated by single tube photothermal absorption measurements. Biexponential luminescence decays are systematically observed, with short and long lifetimes around 45 and 250 ps. This behavior is attributed to the band edge exciton fine structure with a dark level lying a few meV below a bright one. △ Less

Submitted 6 January, 2009; originally announced January 2009.

Journal ref: Phys. Rev. Lett. 101, 077402 (2008)

Photothermal heterodyne imaging of individual nonfluorescent nanoclusters and nanocrystals

Authors: Stéphane Berciaud, Laurent Cognet, Gerhard A Blab, Brahim Lounis

Abstract: We introduce a new, highly sensitive, and simple heterodyne optical method for imaging individual nonfluorescent nanoclusters and nanocrystals. A 2 order of magnitude improvement of the signal is achieved compared to previous methods. This allows for the unprecedented detection of individual small absorptive objects such as metallic clusters (of 67 atoms) or nonluminescent semiconductor nanocrys… ▽ More We introduce a new, highly sensitive, and simple heterodyne optical method for imaging individual nonfluorescent nanoclusters and nanocrystals. A 2 order of magnitude improvement of the signal is achieved compared to previous methods. This allows for the unprecedented detection of individual small absorptive objects such as metallic clusters (of 67 atoms) or nonluminescent semiconductor nanocrystals. The measured signals are in agreement with a calculation based on the scattering field theory from a photothermal-induced modulated index of refraction profile around the nanoparticle. △ Less

Submitted 29 April, 2007; originally announced April 2007.

Journal ref: Physical review letters 93, 25 (17/12/2004) 257402

Photothermal Absorption Spectroscopy of Individual Semiconductor Nanocrystals

Authors: Stéphane Berciaud, Laurent Cognet, Brahim Lounis

Abstract: Photothermal heterodyne detection is used to record the first room-temperature absorption spectra of single CdSe/ZnS semiconductor nanocrystals. These spectra are recorded in the high cw excitation regime, and the observed bands are assigned to transitions involving biexciton and trion states. Comparison with the single nanocrystals photoluminescence spectra leads to the measurement of spectral… ▽ More Photothermal heterodyne detection is used to record the first room-temperature absorption spectra of single CdSe/ZnS semiconductor nanocrystals. These spectra are recorded in the high cw excitation regime, and the observed bands are assigned to transitions involving biexciton and trion states. Comparison with the single nanocrystals photoluminescence spectra leads to the measurement of spectral Stokes shifts free from ensemble averaging. △ Less

Submitted 28 April, 2007; originally announced April 2007.

Journal ref: Nano Letters 5, 11 (25/10/2005) 2160

Observation of intrinsic size effects in the optical response of individual gold nanoparticles

Authors: Stéphane Berciaud, Laurent Cognet, Philippe Tamarat, Brahim Lounis

Abstract: The Photothermal Heterodyne Imaging method is used to study for the first time the absorption spectra of individual gold nanoparticles with diameters down to 5 nm. Intrinsic size effects wich result in a broadening of the Surface Plasmon resonance are unambiguously observed. Dispersions in the peak energies and homogeneous widths of the single particle resonances are revealed. The experimental r… ▽ More The Photothermal Heterodyne Imaging method is used to study for the first time the absorption spectra of individual gold nanoparticles with diameters down to 5 nm. Intrinsic size effects wich result in a broadening of the Surface Plasmon resonance are unambiguously observed. Dispersions in the peak energies and homogeneous widths of the single particle resonances are revealed. The experimental results are analysed within the frame of Mie theory. △ Less

Submitted 1 June, 2007; v1 submitted 28 April, 2007; originally announced April 2007.

Journal ref: Nano Letters 5, 3 (15/02/2005) 515

Single NanoParticle Photothermal Tracking (SNaPT) of 5 nm gold beads in live cells

Authors: David Lasne, Gerhard A. Blab, Stéphane Berciaud, Martin Heine, Laurent Groc, Daniel Choquet, Laurent Cognet, Brahim Lounis

Abstract: Tracking individual nano-objets in live cells during arbitrary long times is an ubiquitous need in modern biology. We present here a method for tracking individual 5 nm gold nanoparticles on live cells. It relies on the photothermal effect and the detection of the Laser Induced Scattering around a NanoAbsorber (LISNA). The key point for recording trajectories at video rate is the use of a triang… ▽ More Tracking individual nano-objets in live cells during arbitrary long times is an ubiquitous need in modern biology. We present here a method for tracking individual 5 nm gold nanoparticles on live cells. It relies on the photothermal effect and the detection of the Laser Induced Scattering around a NanoAbsorber (LISNA). The key point for recording trajectories at video rate is the use of a triangulation procedure. The effectiveness of the method is tested against Single fluorescent Molecule Tracking in live COS7 cells on subsecond time scales. We further demonstrate recordings for several minutes of AMPA receptors trajectories on the plasma membrane of live neurons. SNaPT has the unique potential to record arbitrary long trajectory of membrane proteins using non-fluorescent nanometer sized labels. △ Less

Submitted 28 April, 2007; originally announced April 2007.

Journal ref: Biophysical Journal 91, 12 (15/12/2006) 4598

Absorption spectroscopy of individual single-walled carbon nanotubes

Authors: Stéphane Berciaud, Laurent Cognet, Philippe Poulin, R. Bruce Weisman, Brahim Lounis

Abstract: Current methods for producing single-walled carbon nanotubes (SWNTs) lead to heterogeneous samples containing mixtures of metallic and semiconducting species with a variety of lengths and defects. Optical detection at the single nanotube level should thus offer the possibility to examine these heterogeneities provided that both SWNT species are equally well detected. Here, we used photothermal h… ▽ More Current methods for producing single-walled carbon nanotubes (SWNTs) lead to heterogeneous samples containing mixtures of metallic and semiconducting species with a variety of lengths and defects. Optical detection at the single nanotube level should thus offer the possibility to examine these heterogeneities provided that both SWNT species are equally well detected. Here, we used photothermal heterodyne detection to record absorption images and spectra of individual SWNTs. Because this photothermal method relies only on light absorption, it readily detects metallic nanotubes as well as the emissive semiconducting species. The first and second optical transitions in individual semicontucting nanotubes have been probed. Comparison between the emission and absorption spectra of the lowest-lying optical transition reveal mainly small Stokes shifts. Side bands in the near-infrared absorption spectra are observed and assigned to exciton-phonon bound states. No such sidebands are detected around the lowest transition of metallic nanotubes. △ Less

Submitted 28 April, 2007; v1 submitted 27 April, 2007; originally announced April 2007.

Journal ref: Nano Letters 7, 5 (09/05/2007) 1203-1207

Photothermal Heterodyne Imaging of Individual Metallic Nanoparticles: Theory versus Experiments

Authors: Stéphane Berciaud, David Lasne, Gerhard A. Blab, Laurent Cognet, Brahim Lounis

Abstract: We present the theoretical and detailed experimental characterizations of Photothermal Heterodyne Imaging. An analytical expression of the photothermal heterodyne signal is derived using the theory of light scattering from a fluctuating medium. The amplitudes of the signals detected in the backward and forward configurations are compared and their frequency dependences are studied. The applicati… ▽ More We present the theoretical and detailed experimental characterizations of Photothermal Heterodyne Imaging. An analytical expression of the photothermal heterodyne signal is derived using the theory of light scattering from a fluctuating medium. The amplitudes of the signals detected in the backward and forward configurations are compared and their frequency dependences are studied. The application of the Photothermal Heterodyne detection technique to the absorption spectroscopy of individual gold nanoparticles is discussed and the detection of small individual silver nanoparticles is demonstrated. △ Less

Submitted 28 April, 2007; v1 submitted 20 July, 2005; originally announced July 2005.

Journal ref: Physical Review B 73 (20/01/2006) 045424

Photothermal heterodyne imaging of individual non-fluorescent nano-objects

Authors: Stephane Berciaud, Laurent Cognet, Gerhard Blab, Brahim Lounis

Abstract: We introduce a new, highly sensitive, and simple heterodyne optical method for imaging individual non-fluorescent nano-objects. A two orders of magnitude improvement of the signal is achieved compared to previous methods. This allows for the unprecedented detection of individual small absorptive objects such as metallic clusters (of 67 atoms) or non-luminescent semiconductor nanocrystals. The me… ▽ More We introduce a new, highly sensitive, and simple heterodyne optical method for imaging individual non-fluorescent nano-objects. A two orders of magnitude improvement of the signal is achieved compared to previous methods. This allows for the unprecedented detection of individual small absorptive objects such as metallic clusters (of 67 atoms) or non-luminescent semiconductor nanocrystals. The measured signals are in agreement with a calculation based on the scattering field theory from a photothermal-induced modulated index of refraction profile around the nanoparticle. △ Less

Submitted 26 August, 2004; originally announced August 2004.

Comments: Submitted 25Mar04 to PRL