Stress measurements in silicon photonics by integrated Raman spectroscopy
Authors:
Guillaume Marcaud,
Mathias Berciano,
Christian Lafforgue,
Carlos Alonso-Ramos,
Xavier Le Roux,
Thomas Maroutian,
Guillaume Agnus,
Pascal Aubert,
Ludovic Largeau,
Eric Cassan,
Sylvia Matzen,
Delphine Marris-Morini,
Philippe Lecoeur,
Laurent Vivien
Abstract:
Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds…
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Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds of nanometers, and 3D-stacked integration. We present for the first time the characterization of the stress tensor of a silicon waveguide using Integrated Raman Spectroscopy (IRS). This experimental technique is directly sensitive to the effective stress, which involves changes in optical properties of the guided mode, at the working wavelength and polarization state of the photonic component. The experimental stress tensor is in good agreement with simulations.
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Submitted 24 December, 2020;
originally announced December 2020.
Polarization and wavelength agnostic nanophotonic beam splitter
Authors:
David González-Andrade,
Christian Lafforgue,
Elena Durán-Valdeiglesias,
Xavier Le Roux,
Mathias Berciano,
Eric Cassan,
Delphine Marris-Morini,
Aitor V. Velasco,
Pavel Cheben,
Laurent Vivien,
Carlos Alonso-Ramos
Abstract:
High-performance optical beam splitters are of fundamental importance for the development of advanced silicon photonics integrated circuits. However, due to the high refractive index contrast of the silicon-on-insulator platform, state of the art Si splitters are hampered by trade-offs in bandwidth, polarization dependence and sensitivity to fabrication errors. Here, we present a new strategy that…
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High-performance optical beam splitters are of fundamental importance for the development of advanced silicon photonics integrated circuits. However, due to the high refractive index contrast of the silicon-on-insulator platform, state of the art Si splitters are hampered by trade-offs in bandwidth, polarization dependence and sensitivity to fabrication errors. Here, we present a new strategy that exploits modal engineering in slotted waveguides to overcome these limitations, enabling ultra-wideband polarization-insensitive optical power splitters, with relaxed fabrication tolerances. The proposed splitter relies on a single-mode slot waveguide which is transformed into two strip waveguides by a symmetric taper, yielding equal power splitting. Based on this concept, we experimentally demonstrate -3$\pm$0.5 dB polarization-independent transmission in an unprecedented 390 nm bandwidth (1260 - 1650 nm), even in the presence of waveguide width deviations as large as $\pm$25 nm.
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Submitted 25 June, 2018;
originally announced July 2018.
