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The two-step photoexcitation mechanism in a-Se
Authors:
J. Berashevich,
A. Mishchenko,
A. Reznik
Abstract:
The first-principal simulations are applied to study a photo-induced metastability in amorphous selenium (a-Se) and the contribution of the valence-alteration pair (VAP) defects in this process. The VAP defect is confirmed to be the equilibrium defect; it minimizes the destabilizing interaction between adjacent Se chains induced by dis-orientation of the lone-pair (LP) electrons, and thus relieves…
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The first-principal simulations are applied to study a photo-induced metastability in amorphous selenium (a-Se) and the contribution of the valence-alteration pair (VAP) defects in this process. The VAP defect is confirmed to be the equilibrium defect; it minimizes the destabilizing interaction between adjacent Se chains induced by dis-orientation of the lone-pair (LP) electrons, and thus relieves a tension in a system. The excitation of LP electrons is proposed to be described by two coexisting processes, namely, single and double electron excitations. Both processes have been found to form defect states in the band gap and to cause the experimentally observed photo-darkening and photo-volume expansion, however, only double electron excitation is capable to trigger bond rearrangement and structural transformation. Lattice relaxation, which follows bond rearrangement occurs with characteristic energy of -0.9$\pm$0.3 eV and promotes formation of energetically favorable VAP defects or crystalline inclusions thus ultimately stimulating the photo-induced crystallization. In addition, photo-induced crystallization has been directly simulated in a system with an increased crystalline order.
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Submitted 25 February, 2014;
originally announced February 2014.
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Origin of n- and p-type conductivity in undoped $α$-PbO: role of defects
Authors:
J. Berashevich,
J. A. Rowlands,
A. Reznik
Abstract:
The first principles calculations (GGA) have been applied to study the crystallographic defects in $α$-PbO in order to understand an origin of $n$- and $p$-type conductivity in otherwise undoped $α$-PbO. It was found that deposition in the oxygen-deficient environment to be defined in our simulations by the Pb-rich/O-poor limit stimulates a formation of the O vacancies and the Pb interstitials bot…
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The first principles calculations (GGA) have been applied to study the crystallographic defects in $α$-PbO in order to understand an origin of $n$- and $p$-type conductivity in otherwise undoped $α$-PbO. It was found that deposition in the oxygen-deficient environment to be defined in our simulations by the Pb-rich/O-poor limit stimulates a formation of the O vacancies and the Pb interstitials both to be characterized by quite low formation energies $\sim$ 1.0 eV. The O vacancy being occupied by two electrons shifts a balance of electrons and holes between these two defects to excess of electrons (four electrons against two holes) that causes the $n$-type do**. For the Pb-poor/O-rich limit, an excess of oxygen triggers a formation of the O interstitials characterized by such a low formation energy that spontaneous appearance of this defect is predicted. It is shown that the concentration of the O interstitials is able to reach the extreme magnitude equal to number of the possible defect sites ($\sim 10^{22}$cm$^{-3}$). The localized state formed by the O interstitial is occupied by two holes and because there are no other defects in reasonable concentration to balance the hole redundancy, $p$-type do** is induced.
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Submitted 5 November, 2013; v1 submitted 16 April, 2013;
originally announced April 2013.
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A proposed new route to d0 magnetism in semiconductors
Authors:
J. Berashevich,
A. Reznik
Abstract:
Here we propose to induce magnetism in semiconductor utilizing the unique properties of the interstitial defect to act as the magnetic impurity within the alpha-PbO crystal structure. The Pbi interstitial generates the p-localized state with two on-site electrons to obey the Hund's rule for their ordering. It is demonstrated that instead of Pb interstitial other non-magnetic impurities of s^2p^{x}…
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Here we propose to induce magnetism in semiconductor utilizing the unique properties of the interstitial defect to act as the magnetic impurity within the alpha-PbO crystal structure. The Pbi interstitial generates the p-localized state with two on-site electrons to obey the Hund's rule for their ordering. It is demonstrated that instead of Pb interstitial other non-magnetic impurities of s^2p^{x} outer shell configuration can be applied to induce d0 magnetism with possibility to tune the local magnetic moments mu_B by varying a number of electrons 1< x< 3. The magnetic coupling between such defects is found to be driven by the long-range order interactions that in combination with high defect solubility promises the magnetic percolation to remain above the room temperature.
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Submitted 10 April, 2013;
originally announced April 2013.
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Non-magnetic impurities to induce magnetism in $α$-PbO crystal structure
Authors:
J. Berashevich,
A. Reznik
Abstract:
A new route to $d^0$ magnetism is established with help of the first principles methods. Non-magnetic interstitial impurities from group 14 in the periodic table are found to induce $p$-orbital magnetism in polycrystalline PbO-type structures. The half-filled $p$-orbitals occupied by two electrons is generated on the impurity site for which the ferromagnetic state of high stability is guaranteed b…
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A new route to $d^0$ magnetism is established with help of the first principles methods. Non-magnetic interstitial impurities from group 14 in the periodic table are found to induce $p$-orbital magnetism in polycrystalline PbO-type structures. The half-filled $p$-orbitals occupied by two electrons is generated on the impurity site for which the ferromagnetic state of high stability is guaranteed by the first Hund's rule. Since the impurity is embedded between layers of the host, its atomic radius is a key to tune not only its solubility but also the magnetic behavior: the on-site stability of the spin polarized state grows with reduction of the atomic radius while losing in the long-rang order interactions. However, for impurities of smaller radius the weaker inter-site magnetic coupling can be compensated by their concentration as the impurity solubility limit is shifted to higher magnitudes.
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Submitted 5 November, 2013; v1 submitted 28 March, 2013;
originally announced March 2013.
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Self-passivation of vacancies in α-PbO
Authors:
J. Berashevich,
J. A. Rowlands,
A. Reznik
Abstract:
We introduce a self-passivation of single lead (Pb) and oxygen (O) vacancies in the α-PbO compound through formation of a Pb-O vacancy pair. The preferential mechanism for pair formation involves initial development of the single Pb vacancy which, by weakening the covalent bonding, sets up the crystal lattice for an appearance of the O vacancy. Binding of the Pb and O vacancies occurs through the…
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We introduce a self-passivation of single lead (Pb) and oxygen (O) vacancies in the α-PbO compound through formation of a Pb-O vacancy pair. The preferential mechanism for pair formation involves initial development of the single Pb vacancy which, by weakening the covalent bonding, sets up the crystal lattice for an appearance of the O vacancy. Binding of the Pb and O vacancies occurs through the ionization interactions. Since no dangling bonds appear at the Pb-O pair site, this defect has a minor effect on the electronic properties. In such, vacancy self-passivation offers a practical way to improve the transport properties in thermally grown PbO layers.
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Submitted 6 February, 2013;
originally announced February 2013.
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Lead monoxide $α$-PbO: electronic properties and point defect formation
Authors:
J. Berashevich,
O. Semeniuk,
O. Rubel,
J. A. Rowlands,
A. Reznik
Abstract:
The electronic properties of polycrystalline lead oxide consisting of a network of single-crystalline $α$-PbO platelets and the formation of the native point defects in $α$-PbO crystal lattice are studied using first principles calculations. The $α$-PbO lattice consists of coupled layers interaction between which is too low to produce high efficiency interlayer charge transfer. In practice, the po…
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The electronic properties of polycrystalline lead oxide consisting of a network of single-crystalline $α$-PbO platelets and the formation of the native point defects in $α$-PbO crystal lattice are studied using first principles calculations. The $α$-PbO lattice consists of coupled layers interaction between which is too low to produce high efficiency interlayer charge transfer. In practice, the polycrystalline nature of $α$-PbO causes the formation of lattice defects in such a high concentration that defect-related conductivity becomes the dominant factor in the interlayer charge transition. We found that the formation energy for the O vacancies is low, such vacancies are occupied by two electrons in the zero charge state and tend to donate their electrons to the Pb vacancies that leads to ionization of both vacancies.The vacancies introduce localized states in the band gap which can affect charge transport. The O vacancy forms a defect state at 1.03 eV above the valence band which can act as a deep trap for electrons, while the Pb vacancy forms a shallow trap for holes located just 0.1 eV above the valence band. Charge de-trap** from O vacancies can be accounted for the experimentally found dark current decay in ITO/PbO/Au structures.
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Submitted 14 December, 2012; v1 submitted 30 October, 2012;
originally announced October 2012.
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Quantum transport anomalies in DNA containing mispairs
Authors:
Xue-Feng Wang,
Tapash Chakraborty,
J. Berashevich
Abstract:
The effect of mispair on charge transport in a DNA of sequence (GC)(TA)_N(GC)_3 connected to platinum electrodes is studied using the tight-binding model. With parameters derived from ab initio density functional result, we calculate the current versus bias voltage for DNA with and without mispair and for different numbers of (TA) basepairs N between the single and triple (GC) basepairs. The curre…
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The effect of mispair on charge transport in a DNA of sequence (GC)(TA)_N(GC)_3 connected to platinum electrodes is studied using the tight-binding model. With parameters derived from ab initio density functional result, we calculate the current versus bias voltage for DNA with and without mispair and for different numbers of (TA) basepairs N between the single and triple (GC) basepairs. The current decays exponentially with $N$ under low bias but reaches a minimum under high bias when a multichannel transport mechanism is established. A (GA) mispair substituting a (TA) basepair near the middle of the (TA)_N sequence usually enhances the current by one order due to its low ionization energy but may decrease the current significantly when an established multichannel mechanism is broken.
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Submitted 8 February, 2012;
originally announced February 2012.
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On the nature of interlayer interactions in a system of two graphene fragments
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
With the help of the quantum chemistry methods we have investigated the nature of interlayer interactions between graphene fragments in different stacking arrangements (AA and AB). We found that the AB stacking pattern as the ground state of the system, is characterized by the effective inter-band orbital interactions which are barely present in the AA. Their vanishing induces electronic decouplin…
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With the help of the quantum chemistry methods we have investigated the nature of interlayer interactions between graphene fragments in different stacking arrangements (AA and AB). We found that the AB stacking pattern as the ground state of the system, is characterized by the effective inter-band orbital interactions which are barely present in the AA. Their vanishing induces electronic decoupling between the graphene layers, so that the bonding interaction $ΔE_{oi}$ between the flakes is drastically reduced from -0.482 eV to -0.087 eV as the stacking pattern is changed from AB to AA. The effective way to improve the bonding interaction between layers preserving the same AA lattice order is to induce rotation of the layer. As the flake is rotated, the bonding interactions are improved mostly due to suppression of the Pauli repulsion which in turn increases the interlayer orbital interactions, while the inter-band part of those remain negligible on the whole range of the rotation angle. The Pauli repulsion is also found to be the main force moving apart two fragments as the stacking pattern is changed from AA to AB. This enhances the equilibrium interlayer distance, which for the AA staking is larger than the established value for the AB stacking (3.4 A)
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Submitted 26 July, 2011;
originally announced July 2011.
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Zip** and unzip** of nanoscale carbon structures
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
We demonstrate theoretically that hydrogenation and annealing applied to nanoscale carbon structures play a crucial role in determining the final shape of the system. In particular, graphene flakes characterized by the linear and non-hydrogenated zigzag or armchair edges have high propensity to merge into a bigger flake or a nanotube (the formation of a single carbon-carbon bond lowers the total e…
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We demonstrate theoretically that hydrogenation and annealing applied to nanoscale carbon structures play a crucial role in determining the final shape of the system. In particular, graphene flakes characterized by the linear and non-hydrogenated zigzag or armchair edges have high propensity to merge into a bigger flake or a nanotube (the formation of a single carbon-carbon bond lowers the total energy of the system by up to 6.22 eV). Conversely, the line of the $sp^2$ carbon bonds (common for pure carbon structures such as graphene or a carbon nanotube) converted into the $sp^3$ type by hydrogenation shows an ability to disassemble the original structure by cutting it along the line of the modified bonds. These structural transformations provide us with an understanding of the behavior of mobile carbon structures in solution and a distinct scenario of how to preserve the original structure which would be a crucial issue for their application in carbon-based electronics.
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Submitted 18 April, 2011;
originally announced April 2011.
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Interlayer repulsion and decoupling effects in stacked turbostratic graphene flakes
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
We have explored the electronic properties of stacked graphene flakes with the help of the quantum chemistry methods. We found that the behavior of a bilayer system is governed by the strength of the repulsive interactions that arise between the layers as a result of the orthogonality of their $π$ orbitals. The decoupling effect, seen experimentally in AA stacked layers is a result of the repulsio…
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We have explored the electronic properties of stacked graphene flakes with the help of the quantum chemistry methods. We found that the behavior of a bilayer system is governed by the strength of the repulsive interactions that arise between the layers as a result of the orthogonality of their $π$ orbitals. The decoupling effect, seen experimentally in AA stacked layers is a result of the repulsion being dominant over the orbital interactions and the observed layer misorientation of 2$^{\circ}-5^{\circ}$ is an attempt by the system to suppress that repulsion and stabilize itself. For misorientated graphene, in the regions of superposed lattices in the Moiré pattern, the repulsion between the layers induce lattice distortion in the form of a bump or, in rigid systems local interlayer decoupling.
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Submitted 24 May, 2011; v1 submitted 29 March, 2011;
originally announced March 2011.
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Graphene and graphane: New stars of nanoscale electronics
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
Discoveries of graphene and graphane possessing unique electronic and magnetic properties offer a bright future for carbon based electronics, with future prospects of superseding silicon in the semiconductor industry.
Discoveries of graphene and graphane possessing unique electronic and magnetic properties offer a bright future for carbon based electronics, with future prospects of superseding silicon in the semiconductor industry.
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Submitted 31 March, 2010;
originally announced March 2010.
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Properties of Graphene: A Theoretical Perspective
Authors:
D. S. L. Abergel,
V. Apalkov,
J. Berashevich,
K. Ziegler,
Tapash Chakraborty
Abstract:
In this review, we provide an in-depth description of the physics of monolayer and bilayer graphene from a theorist's perspective. We discuss the physical properties of graphene in an external magnetic field, reflecting the chiral nature of the quasiparticles near the Dirac point with a Landau level at zero energy. We address the unique integer quantum Hall effects, the role of electron correlat…
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In this review, we provide an in-depth description of the physics of monolayer and bilayer graphene from a theorist's perspective. We discuss the physical properties of graphene in an external magnetic field, reflecting the chiral nature of the quasiparticles near the Dirac point with a Landau level at zero energy. We address the unique integer quantum Hall effects, the role of electron correlations, and the recent observation of the fractional quantum Hall effect in the monolayer graphene. The quantum Hall effect in bilayer graphene is fundamentally different from that of a monolayer, reflecting the unique band structure of this system. The theory of transport in the absence of an external magnetic field is discussed in detail, along with the role of disorder studied in various theoretical models. We highlight the differences and similarities between monolayer and bilayer graphene, and focus on thermodynamic properties such as the compressibility, the plasmon spectra, the weak localization correction, quantum Hall effect, and optical properties. Confinement of electrons in graphene is nontrivial due to Klein tunneling. We review various theoretical and experimental studies of quantum confined structures made from graphene. The band structure of graphene nanoribbons and the role of the sublattice symmetry, edge geometry and the size of the nanoribbon on the electronic and magnetic properties are very active areas of research, and a detailed review of these topics is presented. Also, the effects of substrate interactions, adsorbed atoms, lattice defects and do** on the band structure of finite-sized graphene systems are discussed. We also include a brief description of graphane -- gapped material obtained from graphene by attaching hydrogen atoms to each carbon atom in the lattice.
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Submitted 1 March, 2010;
originally announced March 2010.
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Sustained ferromagnetism induced by H-vacancies in graphane
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
The electronic and magnetic properties of graphane with H-vacancies are investigated with the help of quantum-chemistry methods. The hybridization of the edges is found to be absolutely crucial in defining the size of the bandgap, which is increased from 3.04 eV to 7.51 eV when the hybridization is changed from the sp^2 to the sp^3 type. The H-vacancy defects also influence the size of the gap d…
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The electronic and magnetic properties of graphane with H-vacancies are investigated with the help of quantum-chemistry methods. The hybridization of the edges is found to be absolutely crucial in defining the size of the bandgap, which is increased from 3.04 eV to 7.51 eV when the hybridization is changed from the sp^2 to the sp^3 type. The H-vacancy defects also influence the size of the gap depending on the number of defects and their distribution between the two sides of the graphane plane. Further, the H-vacancy defects induced on one side of the graphane plane and placed on the neighboring carbon atoms are found to be the source of ferromagnetism which is distinguished by the high stability of the state with a large spin number in comparison to that of the singlet state and is expected to persist even at room temperatures. However, the ferromagnetic ordering of the spins is obtained to be limited by the concentration of H-vacancy defects and ordering would be preserved if number of defects do not exceed eight.
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Submitted 14 May, 2010; v1 submitted 6 January, 2010;
originally announced January 2010.
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Do** graphene by adsorption of polar molecules at the oxidized zigzag edges
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
We have theoretically investigated the electronic and magnetic properties of graphene whose zigzag edges are oxidized. The alteration of these properties by adsorption of $\mathrm{H_{2}O}$ and $\mathrm{NH_3}$ molecules have been considered. It was found that the adsorbed molecules form a cluster along the oxidized zigzag edges of graphene due to interaction with the electro-negative oxygen. Grap…
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We have theoretically investigated the electronic and magnetic properties of graphene whose zigzag edges are oxidized. The alteration of these properties by adsorption of $\mathrm{H_{2}O}$ and $\mathrm{NH_3}$ molecules have been considered. It was found that the adsorbed molecules form a cluster along the oxidized zigzag edges of graphene due to interaction with the electro-negative oxygen. Graphene tends to donate a charge to the adsorbates through the oxygen atoms and the efficiency of donation depends on the intermolecular distance and on the location of the adsorbed molecules relative to the plane of graphene. It was found that by appropriate selection of the adsorbates, a controllable and gradual growth of $p$-do** in graphene with a variety of adsorbed molecules can be achieved.
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Submitted 18 November, 2009; v1 submitted 16 November, 2009;
originally announced November 2009.
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Impurity induced spin gap asymmetry in nanoscale graphene
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
We propose a unique way to control both bandgap and the magnetic properties of nanoscale graphene, which might prove highly beneficial for application in nanoelectronic and spintronic devices. We have shown that chemical do** by nitrogen along a single zigzag edge breaks the sublattice symmetry of graphene. This leads to the opening of a gap and a shift of the molecular orbitals localized on t…
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We propose a unique way to control both bandgap and the magnetic properties of nanoscale graphene, which might prove highly beneficial for application in nanoelectronic and spintronic devices. We have shown that chemical do** by nitrogen along a single zigzag edge breaks the sublattice symmetry of graphene. This leads to the opening of a gap and a shift of the molecular orbitals localized on the doped edge in such a way that the spin gap asymmetry, which can lead to half-metallicity under certain conditions, is obtained. The spin-selective behavior of graphene and tunable spin gaps help us to obtain semiconductor diode-like current-voltage characteristics, where the current flowing in one direction is preferred over the other. The do** in the middle of the graphene layer results in an impurity level between the HOMO and LUMO orbitals of pure graphene (again, much like in semiconductor systems) localized on the zigzag edges thus decreasing the bandgap and adding unpaired electrons, and this can also be used to control graphene conductivity.
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Submitted 16 June, 2009;
originally announced June 2009.
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Tunable bandgap and magnetic ordering by adsorption of molecules on graphene
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
We have studied the electronic and magnetic properties of graphene and their modification due to the adsorption of water and other gas molecules. Water and gas molecules adsorbed on nanoscale graphene were found to play the role of defects which facilitate the tunability of the bandgap and allow us to control the magnetic ordering of localized states at the edges. The adsorbed molecules push the…
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We have studied the electronic and magnetic properties of graphene and their modification due to the adsorption of water and other gas molecules. Water and gas molecules adsorbed on nanoscale graphene were found to play the role of defects which facilitate the tunability of the bandgap and allow us to control the magnetic ordering of localized states at the edges. The adsorbed molecules push the wavefunctions corresponding to $α$-spin (up) and $β$-spin (down) states of graphene to the opposite (zigzag) edges. This breaks the sublattice and molecular point group symmetry that results in opening of a large bandgap. The efficiency of the wavefunction displacement depends strongly on the type of molecules adsorbed
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Submitted 16 June, 2009; v1 submitted 30 January, 2009;
originally announced January 2009.
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Thermodynamics of G.A mispairs in DNA: continuum electrostatic model
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
An analysis of the stability of a duplex containing G.A mispairs or G.A/A.G tandem during DNA melting has revealed that duplex stability depends on both DNA sequences and on the conformations of the G.A mispairs. The thermodynamics of single pair opening for G(anti).A(syn) and G(anti).A(anti) conformations adopted by G.A mispairs is found to strongly correlate with that of the canonical base pai…
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An analysis of the stability of a duplex containing G.A mispairs or G.A/A.G tandem during DNA melting has revealed that duplex stability depends on both DNA sequences and on the conformations of the G.A mispairs. The thermodynamics of single pair opening for G(anti).A(syn) and G(anti).A(anti) conformations adopted by G.A mispairs is found to strongly correlate with that of the canonical base pairs, while for sheared conformation a significant difference is observed.
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Submitted 10 July, 2008;
originally announced July 2008.
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How the surrounding water changes the electronic and magnetic properties of DNA
Authors:
Julia Berashevich,
Tapash Chakraborty
Abstract:
Strong influence of water molecules on the transport and magnetic properties of DNA, observed in this study, opens up real opportunities for application of DNA in molecular electronics. Interaction of the nucleobases with water molecules leads to breaking of some of the $π$ bonds and appearance of unbound pi electrons. These unbound electrons contribute significantly to the charge transfer at ro…
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Strong influence of water molecules on the transport and magnetic properties of DNA, observed in this study, opens up real opportunities for application of DNA in molecular electronics. Interaction of the nucleobases with water molecules leads to breaking of some of the $π$ bonds and appearance of unbound pi electrons. These unbound electrons contribute significantly to the charge transfer at room temperature by up to 1000 times, but at low temperature the efficiency of charge transfer is determined by the spin interaction of the two unbound electrons located on the intrastrand nucleobases. The charge exchange between the nucleobases is allowed only when the spins of unbound electrons are antiparallel. Therefore, the conductance of the DNA molecule can be controlled by a magnetic field. That effect has potential applications for develo** a nanoscale spintronic device based on the DNA molecule, where efficiency of spin interaction will be determined by the DNA sequence.
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Submitted 7 July, 2008;
originally announced July 2008.
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The influence of polaron size on the conductivity of poly-DNA
Authors:
Julia A. Berashevich,
Adam D. Bookatz,
Tapash Chakraborty
Abstract:
The velocity of polaron migration in the long poly-DNA chain (~40 base pairs) in an applied electric field has been studied within a polaron model. We found that the polaron velocity strongly depends on the polaron size. A small polaron shows a slow propagation and strong tolerance to the electric field, while a large polaron is much faster and less stable with increasing electric field. Moreove…
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The velocity of polaron migration in the long poly-DNA chain (~40 base pairs) in an applied electric field has been studied within a polaron model. We found that the polaron velocity strongly depends on the polaron size. A small polaron shows a slow propagation and strong tolerance to the electric field, while a large polaron is much faster and less stable with increasing electric field. Moreover, the conductance of the DNA molecule within the polaron model is found to be sensitive to structural disorders in the DNA geometry, but that dependence diminishes with increasing temperature.
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Submitted 7 September, 2007;
originally announced September 2007.
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Polaron tunneling dynamics in the DNA molecule
Authors:
Dr Julia A. Berashevich,
Vadim Apalkov,
Tapash Chakraborty
Abstract:
The formation of polaron and its migration in a DNA chain are studied within a semiclassical Peyrard-Biship-Holstein polaron model. Comparing the energetics of the polaron system found from the quantum chemical and semiclassical calculations, we extract the charge-phonon coupling constant for poly DNA sequences. The coupling constant is found to be larger for the G-C than for the A-T pairs. With…
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The formation of polaron and its migration in a DNA chain are studied within a semiclassical Peyrard-Biship-Holstein polaron model. Comparing the energetics of the polaron system found from the quantum chemical and semiclassical calculations, we extract the charge-phonon coupling constant for poly DNA sequences. The coupling constant is found to be larger for the G-C than for the A-T pairs. With this coupling constant we study tunneling in the DNA molecule. The rates and the nature of tunneling have strong dependence on the DNA sequence. By changing the trap positions in the molecular bridge the tunneling rate can by varied up to seven orders of magnitude.
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Submitted 6 September, 2007;
originally announced September 2007.
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Electronic parameters for the hole transfer in DNA duplex oligomers
Authors:
Dr. Julia A. Berashevich,
Tapash Chakraborty
Abstract:
We report on our calculations of the inner-sphere reorganization energy and the interaction of the pi orbitals within DNA oligomers. The exponential decrease of the electronic coupling between the highest and second highest occupied base orbitals of the intrastrand nucleobases in the (A-T)n and (G-C)n oligomers have been found with an increase of the sequence number n in the DNA structure. We co…
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We report on our calculations of the inner-sphere reorganization energy and the interaction of the pi orbitals within DNA oligomers. The exponential decrease of the electronic coupling between the highest and second highest occupied base orbitals of the intrastrand nucleobases in the (A-T)n and (G-C)n oligomers have been found with an increase of the sequence number n in the DNA structure. We conclude that for realistic estimation of the electronic coupling values between the nucleobases within the DNA molecule, a DNA chain containing at least four base pairs is required. We estimate the geometry relaxation of the base pairs within the (A-T)n and (G-C)n oligomers (n=1-6) due to their oxidation. The decrease of the inner-sphere reorganization energy with elongation of the oligomer structure participating in the oxidation process have been observed. The maximum degree of geometry relaxation of the nucleobase structures and correspondingly the higher charge density in the oxidized state are found to be located close to the oligomer center.
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Submitted 28 March, 2007;
originally announced March 2007.
