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Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor
Authors:
Zailan Zhang,
Jiuxiang Zhang,
Gangqiang Zhou,
Jiyuan Xu,
Xiao Zhang,
Hamid Oughaddou,
Weiyan Qi,
Evangelos Papalazarou,
Luca Perfetti,
Zhesheng Chen,
Azzedine Bendounan,
Marino Marsi
Abstract:
Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction ban…
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Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction band, whose details are still unclear. In this work, we investigated the properties of occupied and photoexcited states of GeAs in energy-momentum space, by combining scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES) and time-resolved ARPES. We found that, GeAs is an indirect gap semiconductor having an electronic gap of 0.8 eV, for which the conduction band minimum (CBM) is located at the Gamma point while the valence band maximum (VBM) is out of Gamma. A Stark broadening of the valence band is observed immediately after photoexcitation, which can be attributed to the effects of the electrical field at the surface induced by inhomogeneous screening. Moreover, the hot electrons relaxation time of 1.56 ps down to the CBM which is dominated from both inter-valley and intra-valley coupling. Besides their relevance for our understanding of GeAs, these findings present general interest for the design on high performance thermoelectric and optoelectronic devices based on 2D semiconductors.
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Submitted 7 March, 2024;
originally announced March 2024.
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Dichroism in time-resolved ARPES and valence band orbital nature in BaNiS2
Authors:
J. Zhang,
Z. Chen,
J. Caillaux,
Y. Klein,
A. Gauzzi,
A. Bendounan,
A. Taleb-Ibrahimi,
L. Perfetti,
E. Papalazarou,
M. Marsi
Abstract:
Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoel…
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Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoelectron yield for two different crystal orientations, we identify the orbital character of bands below and above the chemical potential for the Dirac semimetal BaNiS2. Our results illustrate how the control and understanding of matrix elements effects in time-resolved photoemission spectroscopy can be a powerful tool for the study of quantum materials.
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Submitted 18 June, 2022;
originally announced June 2022.
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Silicene nanoribbons on an insulating thin film
Authors:
Khalid Quertite,
Hanna Enriquez,
Nicolas Trcera,
Yongfeng Tong,
Azzedine Bendounan,
Andrew J. Mayne,
Gérald Dujardin,
Pierre Lagarde,
Abdallah El kenz,
Abdelilah Benyoussef,
Yannick J. Dappe,
Abdelkader Kara,
Hamid Oughaddou
Abstract:
Silicene, a new two-dimensional (2D) material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, we r…
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Silicene, a new two-dimensional (2D) material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, we report the first experimental evidence of silicene sheet on an insulating NaCl thin film. This work represents a major breakthrough; for the study of the intrinsic properties of silicene, and by extension to other 2D materials that have so far only been grown on metal surfaces.
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Submitted 27 December, 2020;
originally announced December 2020.
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Phosphorus Pentamers: Floating Nanoflowers form a 2D Network
Authors:
Wei Zhang,
Hanna Enriquez,
Yongfeng Tong,
Andrew J. Mayne,
Azzedine Bendounan,
Yannick J. Dappe,
Abdelkader Kara,
Gérald Dujardin,
Hamid Oughaddou
Abstract:
We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus pentamers organized into a 2D layer, where the pentamers are aligned in close-packed rows. The scanning tunneling spectroscopy (STS) measurements reveal a semiconducti…
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We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus pentamers organized into a 2D layer, where the pentamers are aligned in close-packed rows. The scanning tunneling spectroscopy (STS) measurements reveal a semiconducting character with a band gap of 1.20 eV. This work presents the formation at low temperature (LT) of a new polymorphic 2D phosphorus layer composed of a floating 2D pentamer structure. The smooth curved terrace edges and a lack of any clear crystallographic orientation with respect to the Ag(111) substrate at room temperature indicates a smooth potential energy surface that is reminiscent of a liquid-like growth phase. This is confirmed by density functional theory (DFT) calculations that find a small energy barrier of only 0.17 eV to surface diffusion of the pentamers (see Supplemental Material). The formation of extended, homogeneous domains is a key ingredient to opening a new avenue to integrate this new 2D material into electronic devices.
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Submitted 4 November, 2020;
originally announced November 2020.
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Tip-induced oxidation of silicene nano-ribbons
Authors:
Mohammed Rachid Tchalala Hanna Enriquez,
Azzedine Bendounan,
Andrew J. Mayne,
Gérald Dujardin,
Abdelkader Kara,
Mustapha Ait Ali,
Hamid Oughaddou
Abstract:
We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag(110) surface using Scanning Tunneling Microscopy and High-Resolution Photoemission Spectroscopy. The results show that silicene nanoribbons present a strong resistance towards oxidation using molecular oxygen. This can be overcome by increasing the electric field in the STM tunnel junction above a threshold of +2.6 V…
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We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag(110) surface using Scanning Tunneling Microscopy and High-Resolution Photoemission Spectroscopy. The results show that silicene nanoribbons present a strong resistance towards oxidation using molecular oxygen. This can be overcome by increasing the electric field in the STM tunnel junction above a threshold of +2.6 V to induce oxygen dissociation and reaction. The higher reactivity of the silicene nanoribbons towards atomic oxygen is observed as expected. The HR-PES confirm these observations: Even at high exposures of molecular oxygen, the Si 2p core-level peaks corresponding to pristine silicene remain dominant, reflecting a very low reactivity to molecular oxygen. Complete oxidation is obtained following exposure to high doses of atomic oxygen; the Si 2p core level peak corresponding to pristine silicene disappears.
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Submitted 24 June, 2020;
originally announced June 2020.
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Single-layer graphene on epitaxial FeRh thin films
Authors:
Vojtěch Uhlíř,
Federico Pressacco,
Jon Ander Arregi,
Pavel Procházka,
Stanislav Průša,
Michal Potoček,
Tomáš Šikola,
Jan Čechal,
Azzedine Bendounan,
Fausto Sirotti
Abstract:
Graphene is a 2D material that displays excellent electronic transport properties with prospective applications in many fields. Inducing and controlling magnetism in the graphene layer, for instance by proximity of magnetic materials, may enable its utilization in spintronic devices. This paper presents fabrication and detailed characterization of single-layer graphene formed on the surface of epi…
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Graphene is a 2D material that displays excellent electronic transport properties with prospective applications in many fields. Inducing and controlling magnetism in the graphene layer, for instance by proximity of magnetic materials, may enable its utilization in spintronic devices. This paper presents fabrication and detailed characterization of single-layer graphene formed on the surface of epitaxial FeRh thin films. The magnetic state of the FeRh surface can be controlled by temperature, magnetic field or strain due to interconnected order parameters. Characterization of graphene layers by X-ray Photoemission and X-ray Absorption Spectroscopy, Low-Energy Ion Scattering, Scanning Tunneling Microscopy, and Low-Energy Electron Microscopy shows that graphene is single-layer, polycrystalline and covers more than 97% of the substrate. Graphene displays several preferential orientations on the FeRh(001) surface with unit vectors of graphene rotated by 30°, 15°, 11°, and 19° with respect to FeRh substrate unit vectors. In addition, the graphene layer is capable to protect the films from oxidation when exposed to air for several months. Therefore, it can be also used as a protective layer during fabrication of magnetic elements or as an atomically thin spacer, which enables incorporation of switchable magnetic layers within stacks of 2D materials in advanced devices.
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Submitted 17 January, 2020;
originally announced January 2020.
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Dispersing and non-dispersing satellites in the photoemission spectra of aluminum
Authors:
Jianqiang Sky Zhou,
Lucia Reining,
Alessandro Nicolaou,
Azzedine Bendounan,
Kari Ruotsalainen,
Marco Vanzini,
J. J. Kas,
J. J. Rehr,
Matthias Muntwiler,
Vladimir N. Strocov,
Fausto Sirotti,
Matteo Gatti
Abstract:
Satellites in electronic spectra are pure many-body effects, and their study has been of increasing interest in both experiment and theory. The presence of satellites due to plasmon excitations can be understood with simple models of electron-boson coupling. It is far from obvious how to match such a model to real spectra, where more than one kind of quasi-particle and of satellite excitation coex…
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Satellites in electronic spectra are pure many-body effects, and their study has been of increasing interest in both experiment and theory. The presence of satellites due to plasmon excitations can be understood with simple models of electron-boson coupling. It is far from obvious how to match such a model to real spectra, where more than one kind of quasi-particle and of satellite excitation coexist. Our joint experimental and theoretical study shows that satellites in the angle-resolved photoemission spectra of the prototype simple metal aluminum consist of a superposition of dispersing and non-dispersing features. Both are due to electron-electron interaction, but the non-dispersing satellites also reflect the thermal motion of the atoms. Moreover, besides their energy dispersion, we also show and explain a strong shape dispersion of the satellites. By taking into account these effects, our first principles calculations using the GW+C approach of many-body perturbation theory reproduce and explain the experimental spectra to an unprecedented extent.
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Submitted 29 November, 2018;
originally announced November 2018.
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Compelling experimental evidence of a Dirac cone in the electronic structure of a 2D Silicon layer
Authors:
S. Sadeddine,
H. Enriquez,
A. Bendounan,
P. Das,
I. Vobornik,
A. Kara,
A. Mayne,
F. Sirotti,
G. Dujardin,
H. Oughaddou
Abstract:
The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) forming a Dirac cone. Since then, other 2D materials have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides. Here, we present an experimental investigation of a single silicon lay…
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The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) forming a Dirac cone. Since then, other 2D materials have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides. Here, we present an experimental investigation of a single silicon layer on Au(111) using low energy electron diffraction (LEED), high resolution angle-resolved photoemission spectroscopy (HR-ARPES), and scanning tunneling microscopy (STM). The HR-ARPES data show compelling evidence that the silicon based 2D overlayer is responsible for the observed linear dispersed feature in the valence band, with a Fermi velocity of v_F ~10^(+6) m.s^(-1) comparable to that of graphene. The STM images show extended and homogeneous domains, offering a viable route to the fabrication of silicene-based opto-electronic devices.
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Submitted 3 November, 2018;
originally announced November 2018.
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Epitaxial Synthesis of Blue Phosphorene
Authors:
Wei Zhang,
Hanna Enriquez,
Yongfeng Tong,
Azzedine Bendounan,
Abdelkader Kara,
Ari P. Seitsonen,
Andrew J. Mayne,
Gérald Dujardin,
Hamid Oughaddou
Abstract:
Phosphorene is a new two-dimensional material composed of a single or few atomic layers of black phosphorus. Phosphorene has both an intrinsic tunable direct band gap and high carrier mobility values, which make it suitable for a large variety of optical and electronic devices. However, the synthesis of single-layer phosphorene is a major challenge. The standard procedure to obtain phosphorene is…
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Phosphorene is a new two-dimensional material composed of a single or few atomic layers of black phosphorus. Phosphorene has both an intrinsic tunable direct band gap and high carrier mobility values, which make it suitable for a large variety of optical and electronic devices. However, the synthesis of single-layer phosphorene is a major challenge. The standard procedure to obtain phosphorene is by exfoliation. More recently, the epitaxial growth of single-layer phosphorene on Au(111) has been investigated by molecular beam epitaxy and the obtained structure has been described as a blue-phosphorene sheet. In the present study, large areas of high-quality monolayer phosphorene, with a band gap value at least equal to 0.8 eV, have been synthesized on Au(111). Our experimental investigations, coupled with DFT calculations, give evidence of two distinct phases of blue phosphorene on Au(111), instead of one as previously reported, and their atomic structures have been determined.
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Submitted 3 November, 2018;
originally announced November 2018.
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Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
Authors:
H. Li,
L. Martinelli,
F. Cadiz,
A. Bendounan,
S. Arscott,
F. Sirotti,
A. C. H. Rowe
Abstract:
A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) map** on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an oxidized silicon (001) surface. With uniaxial compressive and tensile stress applied parallel to the $\langle$110$\rangle$ crystal direction, the observations are rel…
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A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) map** on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an oxidized silicon (001) surface. With uniaxial compressive and tensile stress applied parallel to the $\langle$110$\rangle$ crystal direction, the observations are relevant to the electronic properties of strain-silicon nano-devices with large surface-to-volume ratios such as nanowires and nanomembranes. The surface Fermi level pinning is found to be even in applied stress, a fact that may be related to the symmetry of the Pb$_0$ silicon/oxide interface defects. For stresses up to 160 MPa, an increase in the pinning energy of 0.16 meV/MPa is observed for compressive stress, while for tensile stress it increases by 0.11 meV/MPa. Using the bulk, valence band deformation potentials the reduction in surface band bending in compression (0.09 meV/MPa) and in tension (0.13 meV/MPa) can be estimated.
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Submitted 4 February, 2019; v1 submitted 26 October, 2018;
originally announced October 2018.
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Laser induced phase transition in epitaxial FeRh layers studied by pump-probe valence band photoemission
Authors:
Federico Pressacco,
Vojtěch Uhlíř,
Matteo Gatti,
Alessandro Nicolaou,
Azzedine Bendounan,
Jon Ander Arregi,
Sheena K. K. Patel,
Eric E. Fullerton,
Damjan Krizmancic,
Fausto Sirotti
Abstract:
We use time-resolved X-ray photoelectron spectroscopy to probe the electronic and magnetization dynamics in FeRh films after ultrafast laser excitations. We present experimental and theoretical results which investigate the electronic structure of the FeRh during the first-order phase transition identifying a clear signature of the magnetic phase. We find that a spin polarized feature at the Fermi…
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We use time-resolved X-ray photoelectron spectroscopy to probe the electronic and magnetization dynamics in FeRh films after ultrafast laser excitations. We present experimental and theoretical results which investigate the electronic structure of the FeRh during the first-order phase transition identifying a clear signature of the magnetic phase. We find that a spin polarized feature at the Fermi edge is a fingerprint of the magnetic status of the system that is independent of the long-range ferromagnetic alignment of the magnetic domains. We use this feature to follow the phase transition induced by a laser pulse in a pump-probe experiment and find that the magnetic transition occurs in less than 50 ps, and reaches its maximum in 100 ps.
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Submitted 2 March, 2018;
originally announced March 2018.
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Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics
Authors:
Soma Banik,
Pranab Kumar Das,
Azzedine Bendounan,
Ivana Vobornik,
A. Arya,
Nathan Beaulieu,
Jun Fujii,
A. Thamizhavel,
P. U. Sastry,
A. K. Sinha,
D. M. Phase,
S. K. Deb
Abstract:
Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient α_R=5 eVÅ. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and fro…
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Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient α_R=5 eVÅ. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and from antiferromagnetic to the ferromagnetic ground state (41.5 K). We find that Pr 4f states in PrGe is strongly hybridized with the Pr 5d and Ge 4s-4p states near the Fermi level. The behavior of Rashba effect is found to be different in the k_x and the k_y directions showing electron-like and the hole-like bands, respectively. The possible origin of Rashba effect in the paramagnetic phase is related to the anti-parallel spin polarization present in this system. First-principles density functional calculations of Pr terminated surface with the anti-parallel spins shows a fair agreement with the experimental results. We find that the anti-parallel spins are strongly coupled to the lattice such that the PrGe system behaves like weak ferromagnetic system. Analysis of the energy dispersion curves at different magnetic phases showed that there is a competition between the Dzyaloshinsky-Moriya interaction and the exchange interaction which gives rise to the magnetic ordering in PrGe. Supporting evidences of the presence of Dzyaloshinsky-Moriya interaction are observed as anisotropic magnetoresistance with respect to field direction and first-order type hysteresis in the X-ray diffraction measurements. A giant negative magnetoresistance of 43% in the antiferromagnetic phase and tunable Rashba parameter with temperature across the magnetic transitions makes this material a suitable candidate for technological application in the antiferromagnetic spintronic devices.
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Submitted 21 September, 2016; v1 submitted 20 September, 2016;
originally announced September 2016.
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Electron scattering, charge order, and pseudogap physics in La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$: An angle resolved photoemission spectroscopy study
Authors:
Christian E. Matt,
Claudia G. Fatuzzo,
Y. Sassa,
M. Mansson,
S. Fatale,
V. Bitetta,
X. Shi,
S. Pailhes,
M. H. Berntsen,
T. Kurosawa,
M. Oda,
N. Momono,
O. J. Lipscombe,
S. M. Hayden,
J. -Q. Yan,
J. -S. Zhou,
J. B. Goodenough,
S. Pyon,
T. Takayama,
H. Takagi,
L. Patthey,
A. Bendounan,
E. Razzoli,
M. Shi,
N. C. Plumb
, et al. (5 additional authors not shown)
Abstract:
We report an angle-resolved photoemission study of the charge stripe ordered La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ system. A comparative and quantitative line shape analysis is presented as the system evolves from the overdoped regime into the charge ordered phase. On the overdoped side ($x=0.20$), a normal state anti-nodal spectral gap opens upon cooling below ~ 80 K. In this process spectral weigh…
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We report an angle-resolved photoemission study of the charge stripe ordered La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ system. A comparative and quantitative line shape analysis is presented as the system evolves from the overdoped regime into the charge ordered phase. On the overdoped side ($x=0.20$), a normal state anti-nodal spectral gap opens upon cooling below ~ 80 K. In this process spectral weight is preserved but redistributed to larger energies. A correlation between this spectral gap and electron scattering is found. A different lineshape is observed in the antinodal region of charge ordered Nd-LSCO $x=1/8$. Significant low-energy spectral weight appears to be lost. These observations are discussed in terms of spectral weight redistribution and gap** %of spectral weight originating from charge stripe ordering.
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Submitted 28 September, 2015;
originally announced September 2015.
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Stable room-temperature ferromagnetic phase at the FeRh(100) surface
Authors:
Federico Pressacco,
Vojtěch Uhlíř,
Matteo Gatti,
Azzedine Bendounan,
Eric E. Fullerton,
Fausto Sirotti
Abstract:
Interfaces and low dimensionality are sources of strong modifications of electronic, structural, and magnetic properties of materials. FeRh alloys are an excellent example because of the first-order phase transition taking place at $\sim$400 K from an antiferromagnetic phase at room temperature to a high temperature ferromagnetic one. It is accompanied by a resistance change and volume expansion o…
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Interfaces and low dimensionality are sources of strong modifications of electronic, structural, and magnetic properties of materials. FeRh alloys are an excellent example because of the first-order phase transition taking place at $\sim$400 K from an antiferromagnetic phase at room temperature to a high temperature ferromagnetic one. It is accompanied by a resistance change and volume expansion of about 1\%. We have investigated the electronic and magnetic properties of FeRh(100) epitaxially grown on MgO by combining spectroscopies characterized by different probing depths, namely X-ray magnetic circular dichroism and photoelectron spectroscopy. We thus reveal that the symmetry breaking induced at the Rh-terminated surface stabilizes a surface ferromagnetic layer involving five planes of Fe and Rh atoms in the nominally antiferromagnetic phase at room temperature. First-principles calculations provide a microscopic description of the structural relaxation and the electron spin-density distribution that fully support the experimental findings.
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Submitted 3 June, 2015;
originally announced August 2015.
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Estimate of the Coulomb Correlation Energy in CeAg$_2$Ge$_2$ from Inverse Photoemission and High Resolution Photoemission Spectroscopy
Authors:
Soma Banik,
A. Arya,
Azzedine Bendounan,
M. Maniraj,
A. Thamizhavel,
I. Vobornik,
S. K. Dhar,
S. K. Deb
Abstract:
The occupied and the unoccupied electronic structure of CeAg$_2$Ge$_2$ single crystal has been studied using high resolution photoemission and inverse photoemission spectroscopy respectively. High resolution photoemission reveals the clear signature of Ce $4f$ states in the occupied electronic structure which was not observed earlier due to the poor resolution. The coulomb correlation energy in th…
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The occupied and the unoccupied electronic structure of CeAg$_2$Ge$_2$ single crystal has been studied using high resolution photoemission and inverse photoemission spectroscopy respectively. High resolution photoemission reveals the clear signature of Ce $4f$ states in the occupied electronic structure which was not observed earlier due to the poor resolution. The coulomb correlation energy in this system has been determined experimentally from the position of the $4f$ states above and below the Fermi level. Theoretically the correlation energy has been determined by using the first principles density functional calculations within the generalized gradient approximations taking into account the strong intra-atomic (on-site) interaction Hubbard $U_{eff}$ term. Although the valence band calculated with different $U_{eff}$ does not show significant difference, but the substantial changes are observed in the conduction band. The estimated value of correlation energy from both the theory and the experiment is $\approx$4.2~eV for CeAg$_2$Ge$_2$.
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Submitted 21 April, 2014;
originally announced April 2014.
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Silicon Sheets By Redox Assisted Chemical Exfoliation
Authors:
Mohamed Rachid Tchalala,
Mustapha Ait Ali,
Hanna Enriquez,
Abdelkader Kara,
Abdessadek Lachgar,
Said Yagoubi,
Eddy Foy,
Enrique Vega,
Azzedine Bendounan,
Mathieu G. Silly,
Fausto Sirotti,
Serge Nitshe,
Damien Chaudanson,
Haik Jamgotchian,
Bernard Aufray,
Andrew J. Mayne,
Gérald Dujardin,
Hamid Oughaddou
Abstract:
In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon s…
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In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure.
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Submitted 29 September, 2013;
originally announced September 2013.
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Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure
Authors:
J. E. Rault,
G. Agnus,
T. Maroutian,
V. Pillard,
Ph. Lecoeur,
G. Niu,
B. Vilquin,
A. Bendounan,
M. G. Silly,
F. Sirotti,
N. Barrett
Abstract:
In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe t…
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In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.
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Submitted 14 July, 2013;
originally announced July 2013.
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Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias
Authors:
J. E. Rault,
G. Agnus,
T. Maroutian,
V. Pillard,
Ph. Lecoeur,
G. Niu,
B. Vilquin,
M. G. Silly,
A. Bendounan,
F. Sirotti,
N. Barrett
Abstract:
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is suppor…
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The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
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Submitted 25 March, 2013; v1 submitted 19 February, 2013;
originally announced February 2013.
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Formation of one-dimensional self-assembled silicon nanoribbons on Au(110)-(2x1)
Authors:
Mohamed Rachid Tchalal,
Hanna Enriquez,
Andrew J. Mayne,
Abdelkader Kara,
Silvan Roth,
Mathieu G. Silly,
Azzedine Bendounan,
Fausto Sirotti,
Thomas Greber,
Bernard Aufray,
Gérald Dujardin,
Mustapha Ait Ali,
Hamid Oughaddou
Abstract:
We report results on the self-assembly of silicon nanoribbons on the (2x1) reconstructed Au(110) surface under ultra-high vacuum conditions. Upon adsorption of 0.2 monolayer (ML) of silicon the (2x1) reconstruction of Au(110) is replaced by an ordered surface alloy. Above this coverage a new superstructure is revealed by low electron energy diffraction (LEED) which becomes sharper at 0.3 Si ML. Th…
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We report results on the self-assembly of silicon nanoribbons on the (2x1) reconstructed Au(110) surface under ultra-high vacuum conditions. Upon adsorption of 0.2 monolayer (ML) of silicon the (2x1) reconstruction of Au(110) is replaced by an ordered surface alloy. Above this coverage a new superstructure is revealed by low electron energy diffraction (LEED) which becomes sharper at 0.3 Si ML. This superstructure corresponds to Si nanoribbons all oriented along the [-110] direction as revealed by LEED and scanning tunneling microscopy (STM). STM and high-resolution photoemission spectroscopy indicate that the nanoribbons are flat and predominantly 1.6 nm wide. In addition the silicon atoms show signatures of two chemical environments corresponding to the edge and center of the ribbons.
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Submitted 14 February, 2013;
originally announced February 2013.
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Low-Energy Scale Excitations in the Spectral Function of Organic Monolayer Systems
Authors:
J. Ziroff,
S. Hame,
M. Kochler,
A. Bendounan,
A. Schöll,
F. Reinert
Abstract:
Using high-resolution photoemission spectroscopy we demonstrate that the electronic structure of several organic monolayer systems, in particular 1,4,5,8-naphthalene tetracarboxylic dianhydride and Copper-phtalocyanine on Ag(111), is characterized by a peculiar excitation feature right at the Fermi level. This feature displays a strong temperature dependence and is immediatly connected to the bind…
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Using high-resolution photoemission spectroscopy we demonstrate that the electronic structure of several organic monolayer systems, in particular 1,4,5,8-naphthalene tetracarboxylic dianhydride and Copper-phtalocyanine on Ag(111), is characterized by a peculiar excitation feature right at the Fermi level. This feature displays a strong temperature dependence and is immediatly connected to the binding energy of the molecular states, determined by the coupling between the molecule and the substrate. At low temperatures, the line-width of this feature, appearing on top of the partly occupied lowest unoccupied molecular orbital of the free molecule, amounts to only $\approx 25$ meV, representing an unusually small energy scale for electronic excitations in these systems. We discuss possible origins, related e.g. to many-body excitations in the organic-metal adsorbate system, in particular a generalized Kondo scenario based on the single impurity Anderson model.
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Submitted 23 March, 2012;
originally announced March 2012.
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Bimagnon studies in cuprates with Resonant Inelastic X-ray Scattering at the O K edge. II - The do** effect in La2-xSrxCuO4
Authors:
V. Bisogni,
M. Moretti Sala,
A. Bendounan,
N. B. Brookes,
G. Ghiringhelli,
L. Braicovich
Abstract:
We present RIXS data at O K edge from La2-xSrxCuO4 vs. do** between x=0.10 and x=0.22 with attention to the magnetic excitations in the Mid-Infrared region. The sampling done by RIXS is the same as in the undoped cuprates provided the excitation is at the first pre-peak induced by do**. Note that this excitation energy is about 1.5 eV lower than that needed to see bimagnons in the parent compo…
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We present RIXS data at O K edge from La2-xSrxCuO4 vs. do** between x=0.10 and x=0.22 with attention to the magnetic excitations in the Mid-Infrared region. The sampling done by RIXS is the same as in the undoped cuprates provided the excitation is at the first pre-peak induced by do**. Note that this excitation energy is about 1.5 eV lower than that needed to see bimagnons in the parent compound. This approach allows the study of the upper region of the bimagnon continuum around 450 meV within about one third of the Brilluoin Zone around Γ. The results show the presence of damped bimagnons and of higher even order spin excitations with almost constant spectral weight at all the do**s explored here. The implications on high Tc studies are briefly addressed.
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Submitted 28 June, 2012; v1 submitted 29 February, 2012;
originally announced February 2012.
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Artificial Kagome Arrays of Nanomagnets: A Frozen Dipolar Spin Ice
Authors:
N. Rougemaille,
F. Montaigne,
B. Canals,
A. Duluard,
D. Lacour,
M. Hehn,
R. Belkhou,
O. Fruchart,
S. El Moussaoui,
A. Bendounan,
F. Maccherozzi
Abstract:
Magnetic frustration effects in artificial kagome arrays of nanomagnets are investigated using x-ray photoemission electron microscopy and Monte Carlo simulations. Spin configurations of demagnetized networks reveal unambiguous signatures of long range, dipolar interaction between the nanomagnets. As soon as the system enters the spin ice manifold, the kagome dipolar spin ice model captures the ob…
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Magnetic frustration effects in artificial kagome arrays of nanomagnets are investigated using x-ray photoemission electron microscopy and Monte Carlo simulations. Spin configurations of demagnetized networks reveal unambiguous signatures of long range, dipolar interaction between the nanomagnets. As soon as the system enters the spin ice manifold, the kagome dipolar spin ice model captures the observed physics, while the short range kagome spin ice model fails.
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Submitted 11 February, 2011;
originally announced February 2011.
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Anomalies in the Fermi surface and band dispersion of quasi-one-dimensional CuO chains in the high-temperature superconductor YBa2Cu4O8
Authors:
Takeshi Kondo,
R. Khasanov,
J. Karpinski,
S. M. Kazakov,
N. D. Zhigadlo,
Z. Bukowski,
M. Shi,
A. Bendounan,
Y. Sassa,
J. Chang,
S. Pailhés,
J. Mesot,
J. Schmalian,
H. Keller,
A. Kaminski
Abstract:
We have investigated the electronic states in quasi one dimensional (1D) CuO chains by microprobe Angle Resolved Photoemission Spectroscopy. We find that the quasiparticle Fermi surface consists of six disconnected segments, consistent with recent theoretical calculations that predict the formation of narrow, elongated Fermi surface pockets for coupled CuO chains. In addition, we find a strong ren…
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We have investigated the electronic states in quasi one dimensional (1D) CuO chains by microprobe Angle Resolved Photoemission Spectroscopy. We find that the quasiparticle Fermi surface consists of six disconnected segments, consistent with recent theoretical calculations that predict the formation of narrow, elongated Fermi surface pockets for coupled CuO chains. In addition, we find a strong renormalization effect with a significant kink structure in the band dispersion. The properties of this latter effect [energy scale (~40 meV), temperature dependence and behavior with Zn-do**] are identical to those of the bosonic mode observed in CuO2 planes of high temperature superconductors, indicating they have a common origin.
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Submitted 8 December, 2010;
originally announced December 2010.
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Electronic Properties of low dimensional structures
Authors:
Azzedine Bendounan
Abstract:
Exotic phenomena about the behavior of electrons inside the solid were a long time ago predicted by the quantum mechanic physics and are only recently experimentally observed, in particular for systems of extremely reduced dimensions. Here, I report on recent experimental observation of fundamental effect concerning the dispersion properties of the surface state influenced by the presence of sur…
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Exotic phenomena about the behavior of electrons inside the solid were a long time ago predicted by the quantum mechanic physics and are only recently experimentally observed, in particular for systems of extremely reduced dimensions. Here, I report on recent experimental observation of fundamental effect concerning the dispersion properties of the surface state influenced by the presence of surface reconstruction.
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Submitted 11 January, 2010;
originally announced January 2010.
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Asymmetric hysteresis of Néel caps in flux-closure magnetic dots
Authors:
Olivier Fruchart,
Nicolas Rougemaille,
Azzedine Bendounan,
Jean-Christophe Toussaint,
Rachid Belkhou,
Yuan Tian,
Hyeonseung Yu,
Fabien Cheynis,
Aurélien Masseboeuf,
Pascale Bayle-Guillemaud,
Alain Marty
Abstract:
We investigated with XMCD-PEEM magnetic imaging the magnetization reversal processes of Néel caps inside Bloch walls in self-assembled, micron-sized Fe(110) dots with flux-closure magnetic state. In most cases the magnetic-dependent processes are symmetric in field, as expected. However, some dots show pronounced asymmetric behaviors. Micromagnetic simulations suggest that the geometrical featur…
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We investigated with XMCD-PEEM magnetic imaging the magnetization reversal processes of Néel caps inside Bloch walls in self-assembled, micron-sized Fe(110) dots with flux-closure magnetic state. In most cases the magnetic-dependent processes are symmetric in field, as expected. However, some dots show pronounced asymmetric behaviors. Micromagnetic simulations suggest that the geometrical features (and their asymmetry) of the dots strongly affect the switching mechanism of the Néel caps.
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Submitted 1 November, 2009;
originally announced November 2009.
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Anomalous asymmetry of the Fermi surface in the YBa2Cu4O8 high temperature superconductor revealed by Angle Resolved Photoemission Spectroscopy
Authors:
Takeshi Kondo,
R. Khasanov,
Y. Sassa,
A. Bendounan,
S. Pailhes,
J. Chang,
J. Mesot,
H. Keller,
N. D. Zhigadlo,
M. Shi,
S. M. Kazakov,
J. Karpinski,
A. Kaminski
Abstract:
We use microprobe Angle-Resolved Photoemission Spectroscopy to study the Fermi surface and band dispersion of the CuO2 planes in the high temperature superconductor, YBa2Cu4O8. We find a strong in-plane asymmetry of the electronic structure between directions along a and b axes. The saddle point of the antibonding band lies at a significantly higher energy in the a direction (pi,0) than the b di…
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We use microprobe Angle-Resolved Photoemission Spectroscopy to study the Fermi surface and band dispersion of the CuO2 planes in the high temperature superconductor, YBa2Cu4O8. We find a strong in-plane asymmetry of the electronic structure between directions along a and b axes. The saddle point of the antibonding band lies at a significantly higher energy in the a direction (pi,0) than the b direction (0,pi), whereas the bonding band displays the opposite behavior. We demonstrate that the abnormal band shape is due to a strong asymmetry of the bilayer band splitting, likely caused by a non-trivial hybridization between the planes and chains. This asymmetry has an important implication for interpreting key properties of the Y-Ba-Cu-O (YBCO) family, especially the superconducting gap, transport and results of inelastic neutron scattering.
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Submitted 8 November, 2009; v1 submitted 12 March, 2009;
originally announced March 2009.
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Spectroscopic evidence for preformed Cooper pairs in the pseudogap phase of cuprates
Authors:
M. Shi,
A. Bendounan,
E. Razzoli,
S. Rosenkranz,
M. R. Norman,
J. C. Campuzano,
J. Chang,
M. Mansson,
Y. Sassa,
T. Claesson,
O. Tjernberg,
L. Patthey,
N. Momono,
M. Oda,
M. Ido,
S. Guerrero,
C. Mudry,
J. Mesot
Abstract:
Angle-resolved photoemission on underdoped La$_{1.895}$Sr$_{0.105}$CuO$_4$ reveals that in the pseudogap phase, the dispersion has two branches located above and below the Fermi level with a minimum at the Fermi momentum. This is characteristic of the Bogoliubov dispersion in the superconducting state. We also observe that the superconducting and pseudogaps have the same d-wave form with the sam…
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Angle-resolved photoemission on underdoped La$_{1.895}$Sr$_{0.105}$CuO$_4$ reveals that in the pseudogap phase, the dispersion has two branches located above and below the Fermi level with a minimum at the Fermi momentum. This is characteristic of the Bogoliubov dispersion in the superconducting state. We also observe that the superconducting and pseudogaps have the same d-wave form with the same amplitude. Our observations provide direct evidence for preformed Cooper pairs, implying that the pseudogap phase is a precursor to superconductivity.
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Submitted 1 October, 2008;
originally announced October 2008.
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Origins of large critical temperature variations in single layer cuprates
Authors:
A. D. Palczewski,
T. Kondo,
R. Khasanov,
N. N. Kolesnikov,
A. V. Timonina,
E. Rotenberg,
T. Ohta,
A. Bendounan,
Y. Sassa,
A. V. Fedorov,
S. Pailh/'es,
A. F. Santander-Syro,
J. Chang,
M. Shi,
J. Mesot,
H. M. Fretwell,
A. Kaminski
Abstract:
We study the electronic structures of two single layer superconducting cuprates, Tl$_2$Ba$_2$CuO$_{6+δ}$ (Tl2201) and (Bi$_{1.35}$Pb$_{0.85}$)(Sr$_{1.47}$La$_{0.38}$)CuO$_{6+δ}$ (Bi2201) which have very different maximum critical temperatures (90K and 35K respectively) using Angular Resolved Photoemission Spectroscopy (ARPES). We are able to identify two main differences in their electronic prop…
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We study the electronic structures of two single layer superconducting cuprates, Tl$_2$Ba$_2$CuO$_{6+δ}$ (Tl2201) and (Bi$_{1.35}$Pb$_{0.85}$)(Sr$_{1.47}$La$_{0.38}$)CuO$_{6+δ}$ (Bi2201) which have very different maximum critical temperatures (90K and 35K respectively) using Angular Resolved Photoemission Spectroscopy (ARPES). We are able to identify two main differences in their electronic properties. First, the shadow band that is present in double layer and low T$_{c,max}$ single layer cuprates is absent in Tl2201. Recent studies have linked the shadow band to structural distortions in the lattice and the absence of these in Tl2201 may be a contributing factor in its T$_{c,max}$.Second, Tl2201's Fermi surface (FS) contains long straight parallel regions near the anti-node, while in Bi2201 the anti-nodal region is much more rounded. Since the size of the superconducting gap is largest in the anti-nodal region, differences in the band dispersion at the anti-node may play a significant role in the pairing and therefore affect the maximum transition temperature.
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Submitted 10 July, 2008; v1 submitted 23 June, 2008;
originally announced June 2008.
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Electronic structure near the 1/8-anomaly in La-based cuprates
Authors:
J. Chang,
Y. Sassa,
S. Guerrero,
M. Mansson,
M. Shi,
S. Pailhes,
A. Bendounan,
R. Mottl,
T. Claesson,
O. Tjernberg,
L. Patthey,
M. Ido,
N. Momono,
M. Oda,
C. Mudry,
J. Mesot
Abstract:
We report an angle resolved photoemission study of the electronic structure of the pseudogap state in \NdLSCO ($T_c<7$ K). Two opposite dispersing Fermi arcs are the main result of this study. The several scenarios that can explain this observation are discussed.
We report an angle resolved photoemission study of the electronic structure of the pseudogap state in \NdLSCO ($T_c<7$ K). Two opposite dispersing Fermi arcs are the main result of this study. The several scenarios that can explain this observation are discussed.
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Submitted 1 May, 2009; v1 submitted 2 May, 2008;
originally announced May 2008.
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The electronic structure of La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ probed by high- and low-energy angle-resolved photoelectron spectroscopy: evolution with probing depth
Authors:
T. Claesson,
M. Mansson,
A. Önsten,
M. Shi,
S. Pailhés,
J. Chang,
Y. Sassa,
A. Bendounan,
L. Patthey,
J. Mesot,
T. Muro,
T. Matsushita,
T. Kinoshita,
T. Nakamura,
N. Momono,
M. Oda,
M. Ido,
O. Tjernberg
Abstract:
We present angle-resolved photoelectron spectroscopy data probing the electronic structure of the Nd-substituted high-$T_c$ cuprate La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ (Nd-LSCO). Data have been acquired at low and high photon energies, $hν$ = 55 and 500 eV, respectively. Earlier comparable low-energy studies of La$_{1.4-x}$Nd$_{0.6}$Sr$_{x}$CuO$_4$ ($x = 0.10, 0.12, 0.15$) have shown strongl…
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We present angle-resolved photoelectron spectroscopy data probing the electronic structure of the Nd-substituted high-$T_c$ cuprate La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ (Nd-LSCO). Data have been acquired at low and high photon energies, $hν$ = 55 and 500 eV, respectively. Earlier comparable low-energy studies of La$_{1.4-x}$Nd$_{0.6}$Sr$_{x}$CuO$_4$ ($x = 0.10, 0.12, 0.15$) have shown strongly suppressed photoemission intensity, or absence thereof, in large parts of the Brillouin zone. Contrary to these findings we observe spectral weight at all points along the entire Fermi surface contour at low and high photon energies. No signs of strong charge modulations are found. At high photon energy, the Fermi surface shows obvious differences in shape as compared to the low-energy results presented here and in similar studies. The observed difference in shape and the high bulk-sensitivity at this photon energy suggest intrinsic electronic structure differences between the surface and bulk regions.
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Submitted 24 December, 2007;
originally announced December 2007.
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Anisotropic quasiparticle scattering rates in slightly underdoped to optimally doped high-temperature \LSCO\ superconductors
Authors:
J. Chang,
M. Shi,
S. Pailhes,
M. Maansson,
T. Claesson,
O. Tjernberg,
A. Bendounan,
Y. Sassa,
L. Patthey,
N. Momono,
M. Oda,
M. Ido,
S. Guerrero C. Mudry,
J. Mesot
Abstract:
An angle-resolved photoemission study of the scattering rate in the superconducting phase of the high-temperature superconductor \LSCO\ with $x=0.145$ and $x=0.17$, as a function of binding energy and momentum, is presented. We observe that the scattering rate scales linearly with binding energy up to the high-energy scale $E_1\sim0.4$ eV. The scattering rate is found to be strongly anisotropic, w…
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An angle-resolved photoemission study of the scattering rate in the superconducting phase of the high-temperature superconductor \LSCO\ with $x=0.145$ and $x=0.17$, as a function of binding energy and momentum, is presented. We observe that the scattering rate scales linearly with binding energy up to the high-energy scale $E_1\sim0.4$ eV. The scattering rate is found to be strongly anisotropic, with a minimum along the (0,0)-($π,π$) direction. A possible connection to a quantum-critical point is discussed.
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Submitted 12 July, 2010; v1 submitted 21 August, 2007;
originally announced August 2007.
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The coherent {\it d}-wave superconducting gap in underdoped La$_{2-x}$Sr$_{x}$CuO$_4$ as studied by angle-resolved photoemission
Authors:
M. Shi,
J. Chang,
S. Pailhés,
M. R. Norman,
J. C. Campuzano,
M. Mansson,
T. Claesson,
O. Tjernberg,
A. Bendounan,
L. Patthey,
N. Momono,
M. Oda,
M. Ido,
C. Mudry,
J. Mesot
Abstract:
We present angle-resolved photoemission spectroscopy (ARPES) data on moderately underdoped La$_{1.855}$Sr$_{0.145}$CuO$_4$ at temperatures below and above the superconducting transition temperature. Unlike previous studies of this material, we observe sharp spectral peaks along the entire underlying Fermi surface in the superconducting state. These peaks trace out an energy gap that follows a si…
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We present angle-resolved photoemission spectroscopy (ARPES) data on moderately underdoped La$_{1.855}$Sr$_{0.145}$CuO$_4$ at temperatures below and above the superconducting transition temperature. Unlike previous studies of this material, we observe sharp spectral peaks along the entire underlying Fermi surface in the superconducting state. These peaks trace out an energy gap that follows a simple {\it d}-wave form, with a maximum superconducting gap of 14 meV. Our results are consistent with a single gap picture for the cuprates. Furthermore our data on the even more underdoped sample La$_{1.895}$Sr$_{0.105}$CuO$_4$ also show sharp spectral peaks, even at the antinode, with a maximum superconducting gap of 26 meV.
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Submitted 27 July, 2008; v1 submitted 17 August, 2007;
originally announced August 2007.