Showing 1–50 of 115 results for author: Beltram, F

Engineering nanowire quantum dots with iontronics

Authors: Domenic Prete, Valeria Demontis, Valentina Zannier, Lucia Sorba, Fabio Beltram, Francesco Rossella

Abstract: Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization, scalability, and quantum transport properties. Here, we demonstrate a novel paradigm of semiconductor quantum dot engineering by exploiting ion gati… ▽ More Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization, scalability, and quantum transport properties. Here, we demonstrate a novel paradigm of semiconductor quantum dot engineering by exploiting ion gating. Our approach is found to enable the realization and control of a novel quantum dot system: the iontronic quantum dot. Clear Coulomb blockade peaks and their dependence on an externally applied magnetic field are reported, together with the impact of device architecture and confinement potential on quantum dot quality. Devices incorporating two identical quantum dots in series are realized, addressing the reproducibility of the developed approach. The iontronic quantum dot represents a novel class of zero-dimensional quantum devices engineered to overcome the need for thin dielectric layers, facilitating single-step device fabrication. Overall, the reported approach holds the potential to revolutionize the development of functional quantum materials and devices, driving rapid progress in solid state quantum technologies △ Less

Submitted 24 June, 2024; originally announced June 2024.

Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

Authors: Alex Boschi, Zewdu M. Gebeyehu, Sergey Slizovskiy, Vaidotas Mišeikis, Stiven Forti, Antonio Rossi, Kenji Watanabe, Takashi Taniguchi, Fabio Beltram, Vladimir I. Fal'ko, Camilla Coletti, Sergio Pezzini

Abstract: Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric t… ▽ More Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric twistronic stack comprising both MLG and BLG, synthesized via low-pressure chemical vapor deposition (LP-CVD) on Cu. Although a large ($\sim30^{\circ}$) twist angle decouples the MLG and BLG electronic bands near Fermi level, we find that the layer degeneracy in the BLG subsystem is lifted, producing a gap in the absence of external fields. The built-in interlayer asymmetry originates from proximity-induced energy shifts in the outermost layers and requires a displacement field of $0.14$ V/nm to be compensated. The latter corresponds to a $\sim10$ meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 23 pages, 4 figures and supporting information

Optical grade bromide-based thin film electrolytes

Authors: Nicola Melchioni, Giacomo Trupiano, Giorgio Tofani, Riccardo Bertini, Andrea Mezzetta, Federica Bianco, Lorenzo Guazzelli, Fabio Beltram, Christian Silvio Pomelli, Stefano Roddaro, Alessandro Tredicucci, Federico Paolucci

Abstract: Controlling the charge density in low-dimensional materials with an electrostatic potential is a powerful tool to explore and influence their electronic and optical properties. Conventional solid gates impose strict geometrical constraints to the devices and often absorb electromagnetic radiation in the infrared (IR) region. A powerful alternative is ionic liquid (IL) gating. This technique only n… ▽ More Controlling the charge density in low-dimensional materials with an electrostatic potential is a powerful tool to explore and influence their electronic and optical properties. Conventional solid gates impose strict geometrical constraints to the devices and often absorb electromagnetic radiation in the infrared (IR) region. A powerful alternative is ionic liquid (IL) gating. This technique only needs a metallic electrode in contact with the IL and the highest achievable electric field is limited by the electrochemical interactions of the IL with the environment. Despite the excellent gating properties, a large number of ILs is hardly exploitable for optical experiments in the mid-IR region, because they typically suffer from low optical transparency and degradation in ambient conditions. Here, we report the realization of two electrolytes based on bromide ILs dissolved in polymethyl methacrylate (PMMA). We demonstrate that such electrolytes can induce state-of-the-art charge densities as high as $20\times10^{15}\ \mathrm{cm^{-2}}$. Thanks to the low water absorption of PMMA, they work both in vacuum and in ambient atmosphere after a simple vacuum curing. Furthermore, our electrolytes can be spin coated into flat thin films with optical transparency in the range from 600 cm$^{-1}$ to 4000 cm$^{-1}$. Thanks to these properties, the electrolytes are excellent candidates to fill the gap as versatile gating layers for electronic and mid-IR optoelectronic devices. △ Less

Submitted 13 April, 2023; originally announced April 2023.

Comments: 15 pages, 4 figures

Journal ref: Appl. Phys. Lett. 122, 243505 (2023)

Giant reduction of thermal conductivity in twinning superlattice InAsSb nanowires

Authors: Lorenzo Peri, Domenic Prete, Valeria Demontis, Valentina Zannier, Francesca Rossi, Lucia Sorba, Fabio Beltram, Francesco Rossella

Abstract: Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly energy sources as well as in enabling the realization of self-powered biomedical and wearable devices. A crucial requirement in this field is the reduction of the t… ▽ More Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly energy sources as well as in enabling the realization of self-powered biomedical and wearable devices. A crucial requirement in this field is the reduction of the thermal conductivity of the thermoelectric material without detrimentally affecting its electrical transport properties. In this work we demonstrate a drastic reduction of thermal conductivity in III-V semiconductor nanowires due to the presence of intentionally realized periodic crystal lattice twin planes. The electrical and thermal transport of these nanostructures, known as twinning superlattice nanowires, have been probed and compared with their twin-free counterparts, showing a one order of magnitude decrease of thermal conductivity while maintaining unaltered electrical transport properties, thus yielding a factor ten enhancement of the thermoelectric figure of merit, ZT. Our study reports for the first time the experimental measurement of electrical and thermal properties in twinning superlattice nanowires, which emerge as a novel class of nanomaterials for high efficiency thermoelectric energy harvesting. △ Less

Submitted 11 May, 2022; originally announced May 2022.

Black Phosphorus n-type do** by Cu: a microscopic surface investigation

Authors: Abhishek Kumar, Francesca Telesio, Deborah Prezzi, Claudia Cardoso, Alessandra Catellani, Stiven Forti, Camilla Coletti, Manuel Serrano-Ruiz, Maurizio Peruzzini, Fabio Beltram, Stefan Heun

Abstract: We study surface charge transfer do** of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential… ▽ More We study surface charge transfer do** of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential of the local investigation, showing that the n-type do** effect of copper on bP is short-ranged. These experimental results are substantiated by first-principles simulations, which quantify the role of cluster size for an effective n-type do** of bP and explain the Coulomb blockade by an electronic decoupling of the topmost bP layer from the underlying layers driven by the copper cluster. Our results provide novel understanding, difficult to retrieve by transport measurements, of the do** of bP by copper, which appears promising for the implementation of ultra-sharp p-n junctions in bP. △ Less

Submitted 3 January, 2022; originally announced January 2022.

Journal ref: J. Phys. Chem. C 2021, 125, 13477-13484

High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices

Authors: Isha Verma, Sedighe Salimian, Valentina Zannier, Stefan Heun, Francesca Rossi, Daniele Ercolani, Fabio Beltram, Lucia Sorba

Abstract: High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor… ▽ More High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor systems are integrated. In this work, we optimize the morphology of free-standing 2D InSb nanoflags (NFs). In particular, robust NW stems, optimized growth parameters, and the use of reflection high-energy electron diffraction (RHEED), to precisely orient the substrate for preferential growth, are implemented to increase the lateral size of the 2D InSb NFs. Transmission electron microscopy (TEM) analysis of these NFs reveals defect-free zinc blend crystal structure, stoichiometric composition, and relaxed lattice parameters. The resulting NFs are large enough to fabricate Hall-bar contacts with suitable length-to-width ratio enabling precise electrical characterization. An electron mobility of ~29,500 cm2/Vs is measured, which is the highest value reported for free-standing 2D InSb nanostrutures in literature. We envision the use of 2D InSb NFs for fabrication of advanced quantum devices. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Comments: http://hdl.handle.net/11384/105250

Journal ref: ACS Appl. Nano Mater. 2021, 4, 5825-5833

Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions

Authors: Sedighe Salimian, Matteo Carrega, Isha Verma, Valentina Zannier, Michal P. Nowak, Fabio Beltram, Lucia Sorba, Stefan Heun

Abstract: High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context.… ▽ More High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context. In fact, this material has attracted tremendous attention in recent years for the implementation of topological superconducting states supporting Majorana zero modes. However, high-quality heteroepitaxial two-dimensional (2D) InSb layers are very diffcult to realize owing to the large lattice mismatch with all commonly available semiconductor substrates. An alternative pathway is the growth of free-standing single-crystalline 2D InSb nanostructures, the so-called nanoflags. Here we demonstrate fabrication of ballistic Josephson-junction devices based on InSb nanoflags with Ti/Nb contacts that show gate-tunable proximity-induced supercurrent up to 50 nA at 250 mK and a sizable excess current. The devices show clear signatures of subharmonic gap structures, indicating phase-coherent transport in the junction and a high transparency of the interfaces. This places InSb nanoflags in the spotlight as a versatile and convenient 2D platform for advanced quantum technologies. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Journal ref: Appl. Phys. Lett. 119, 214004 (2021)

Ultra-clean high-mobility graphene on technologically relevant substrates

Authors: Ayush Tyagi, Vaidotas Mišeikis, Leonardo Martini, Stiven Forti, Neeraj Mishra, Zewdu M. Gebeyehu, Marco A. Giambra, Jihene Zribi, Mathieu Frégnaux, Damien Aureau, Marco Romagnoli, Fabio Beltram, Camilla Coletti

Abstract: Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room te… ▽ More Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO$_2$/Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene do** and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility $μ_h$ up to 9000 $cm^2 V^{-1} s^{-1}$ and electron mobility $μ_e$ up to 8000 $cm^2 V^{-1} s^{-1}$, with average values $μ_h$ 7500 $cm^2 V^{-1} s^{-1}$ and $μ_e$ 6300 $cm^2 V^{-1} s^{-1}$. The carrier mobility of ultraclean graphene reach values nearly double of that measured in graphene HBs processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics. △ Less

Submitted 1 September, 2021; originally announced September 2021.

Comments: 20 pages, 11 figures

Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires

Authors: Omer Arif, Valentina Zannier, Ang Li, Francesca Rossi, Daniele Ercolani, Fabio Beltram, Lucia Sorba

Abstract: The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a funct… ▽ More The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a function of growth parameters were carried out by scanning and transmission electron microscopy and by energy-dispersive X-ray spectroscopy. Furthermore, by combining the scanning transmission electron microscopy-Moire technique with geometric phase analysis, we studied the residual strain and the relaxation mechanisms in this system. We found that InP shell facets are well-developed along all the crystallographic directions only when the nominal thickness is above 1 nm, suggesting an island-growth mode. Moreover, the crystallographic analysis indicates that both InP and GaAsSb shells grow almost coherently to the InAs core along the 112 direction and elastically compressed along the 110 direction. For InP shell thickness above 8 nm, some dislocations and roughening occur at the interfaces. This study provides useful general guidelines for the fabrication of high-quality devices based on these core-dual-shell nanowires. △ Less

Submitted 3 February, 2021; originally announced February 2021.

Comments: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Crystal Growth and Design, copyright \c{opyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acs.cgd.9b01421

Journal ref: Crystal Growth & Design 2020 20 (2), 1088-1096

Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)

Authors: Sedighe Salimian, Shaohua Xiang, Stefano Colonna, Fabio Ronci, Marco Fosca, Francesco Rossella, Fabio Beltram, Roberto Flammini, Stefan Heun

Abstract: We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene fl… ▽ More We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene flake was deposited on top of it by a polymer-based transfer technique, and a Hall bar device was fabricated from the graphene flake. STM was employed again to study the graphene flake under UHV conditions after device fabrication and showed that surface quality is preserved. Electrical transport measurements, carried out at low temperature in magnetic field, revealed back gate modulation of carrier type and density in the graphene channel and showed the occurrence of weak localization. Under these experimental conditions, no leakage current between back gate and graphene channel was detected. △ Less

Submitted 20 April, 2020; originally announced April 2020.

Journal ref: Adv. Mater. Interfaces 2020, 1902175

Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

Authors: Zahra Sadre Momtaz, Stefano Servino, Valeria Demontis, Valentina Zannier, Daniele Ercolani, Francesca Rossi, Francesco Rossella, Lucia Sorba, Fabio Beltram, Stefano Roddaro

Abstract: We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low f… ▽ More We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed. △ Less

Submitted 1 February, 2020; v1 submitted 22 November, 2019; originally announced November 2019.

Comments: 7 pages, 5 figures, plus SI

Journal ref: Nano Lett. 2020, 20, 3, 1693-1699

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Authors: Shiyao Wu, Kai Peng, Sergio Battiato, Valentina Zannier, Andrea Bertoni, Guido Goldoni, Xin Xie, **gnan Yang, Shan Xiao, Chenjiang Qian, Feilong Song, Sibai Sun, Jianchen Dang, Yang Yu, Fabio Beltram, Lucia Sorba, Ang Li, Bei-bei Li, Francesco Rossella, Xiulai Xu

Abstract: Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB… ▽ More Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB) crystal-phase quantum dots (QDs) realized in single InP nanowires. The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy. The electron (hole) g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature (4.2 K) with different magnetic field configurations, and rationalized by invoking the spin-correlated orbital current model. Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires. △ Less

Submitted 19 October, 2019; originally announced October 2019.

Comments: 10 pages, 5 figures

Journal ref: Nano Research, 2019

Investigation of InAs based devices for topological applications

Authors: Matteo Carrega, Stefano Guiducci, Andrea Iorio, Lennart Bours, Elia Strambini, Giorgio Biasiol, Mirko Rocci, Valentina Zannier, Lucia Sorba, Fabio Beltram, Stefano Roddaro, Francesco Giazotto, Stefan Heun

Abstract: Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former,… ▽ More Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T_c~8K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude. △ Less

Submitted 26 September, 2019; originally announced September 2019.

Comments: 6 pages, 5 figures (Proceeding of the SPIE conference)

Journal ref: Spintronics XII, Proc. of SPIE Vol. 11090, 110903Z (2019)

Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots

Authors: Samuele Cornia, Francesco Rossella, Valeria Demontis, Valentina Zannier, Fabio Beltram, Lucia Sorba, Marco Affronte, Alberto Ghirri

Abstract: With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires incl… ▽ More With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process. △ Less

Submitted 20 December, 2019; v1 submitted 29 July, 2019; originally announced July 2019.

Journal ref: Scientific Reports 9, 19523 (2019)

Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots

Authors: Domenic Prete, Paolo Andrea Erdman, Valeria Demontis, Valentina Zannier, Daniele Ercolani, Lucia Sorba, Fabio Beltram, Francesco Rossella, Fabio Taddei, Stefano Roddaro

Abstract: We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely o… ▽ More We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to evaluate the electronic thermal conductance K and investigate the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration and demonstrate ZT ~ 35 at 30 K, corresponding to an electronic effciency at maximum power close to the Curzon- Ahlborn limit. △ Less

Submitted 16 March, 2019; originally announced March 2019.

Comments: 7 pages, 4 figures

Journal ref: Nano Lett. 2019, 19, 5, 3033-3039

Full electrostatic control of quantum interference in an extended trenched Josephson junction

Authors: Stefano Guiducci, Matteo Carrega, Fabio Taddei, Giorgio Biasiol, Hervé Courtois, Fabio Beltram, Stefan Heun

Abstract: Hybrid semiconductor/superconductor devices constitute an important platform for a wide range of applications, from quantum computing to topological-state-based architectures. Here, we demonstrate full modulation of the interference pattern in a superconducting interference device with two parallel islands of ballistic InAs quantum wells separated by a trench, by acting independently on two side-g… ▽ More Hybrid semiconductor/superconductor devices constitute an important platform for a wide range of applications, from quantum computing to topological-state-based architectures. Here, we demonstrate full modulation of the interference pattern in a superconducting interference device with two parallel islands of ballistic InAs quantum wells separated by a trench, by acting independently on two side-gates. This so far unexplored geometry enables us to tune the device with high precision from a SQUID-like to a Fraunhofer-like behavior simply by electrostatic gating, without the need for an additional in-plane magnetic field. These measurements are successfully analyzed within a theoretical model of an extended tunnel Josephson junction, taking into account the focusing factor of the setup. The impact of these results on the design of novel devices is discussed. △ Less

Submitted 7 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. B 99, 235419 (2019)

Ionic liquid gating of InAs nanowire-based field effect transistors

Authors: Johanna Lieb, Valeria Demontis, Daniele Ercolani, Valentina Zannier, Lucia Sorba, Shimpei Ono, Fabio Beltram, Benjamin Sacépé, Francesco Rossella

Abstract: We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. Th… ▽ More We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: we argue this architecture opens the way to a wide range of fundamental and applied studies from the phase-transitions to bioelectronics. △ Less

Submitted 23 October, 2018; v1 submitted 22 October, 2018; originally announced October 2018.

Comments: 11 pages (abstract and bibliography included), 5 Figures

Report number: adfm.201804378R1

STM Study of Exfoliated Few Layer Black Phosphorus Annealed in Ultrahigh Vacuum

Authors: Abhishek Kumar, F. Telesio, S. Forti, A. Al-Temimy, C. Coletti, M. Serrano-Ruiz, M. Caporali, M. Peruzzini, F. Beltram, S. Heun

Abstract: Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crys… ▽ More Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crystal in situ. Here we present a study of surface modifications on exfoliated bP flakes upon consecutive annealing steps, up to 550 C, well above the sublimation temperature of bP. In particular, our attention is focused on the temperature range 375 C - 400 C, when sublimation starts, and a controlled desorption from the surface occurs alongside with the formation of characteristic well-aligned craters. There is an open debate in the literature about the crystallographic orientation of these craters, whether they align along the zigzag or the armchair direction. Thanks to the atomic resolution provided by STM, we are able to identify the orientation of the craters with respect to the bP crystal: the long axis of the craters is aligned along the zigzag direction of bP. This allows us to solve the controversy, and, moreover, to provide insight in the underlying desorption mechanism leading to crater formation. △ Less

Submitted 28 August, 2018; originally announced August 2018.

Journal ref: 2D Mater. 6 (2019) 015005

Quantum Hall Effect in a Josephson Junction

Authors: Stefano Guiducci, Matteo Carrega, Giorgio Biasiol, Lucia Sorba, Fabio Beltram, Stefan Heun

Abstract: Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs quantum-well bridging two Nb superconducting contacts. We demonstrate supercurrent flow with transport measurements, critical temperature of 8.1 K, and critical… ▽ More Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs quantum-well bridging two Nb superconducting contacts. We demonstrate supercurrent flow with transport measurements, critical temperature of 8.1 K, and critical fields of the order of 3 T. Modulation of supercurrent amplitude can be achieved by acting on two side gates lithographed close to the two-dimensional electron gas. Low-temperature measurements reveal also well-developed quantum Hall plateaus, showing clean quantization of Hall conductance. Here the side gates can be used to manipulate channel width and electron carrier density in the device. These findings demonstrate the potential of these hybrid devices to investigate the coexistence of superconductivity and Quantum Hall effect and constitute the first step in the development of new device architectures hosting topological states of matter. △ Less

Submitted 8 May, 2018; originally announced May 2018.

Journal ref: Phys. Status Solidi RRL 13 (2019) 1800222

Gate-tunable spatial modulation of localized plasmon resonances

Authors: Andrea Arcangeli, Francesco Rossella, Andrea Tomadin, Jihua Xu, Daniele Ercolani, Lucia Sorba, Fabio Beltram, Alessandro Tredicucci, Marco Polini, Stefano Roddaro

Abstract: Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is usually exploited in nanostructured metals. Substantial efforts are being made at the current frontier of the field to employ electron systems in semiconducting a… ▽ More Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is usually exploited in nanostructured metals. Substantial efforts are being made at the current frontier of the field to employ electron systems in semiconducting and semimetallic materials since these add the exciting possibility of realizing electrically tunable and/or active nanoplasmonic devices. Here we demonstrate that a suitable design of the do** profile in a semiconductor nanowire (NW) can be used to tailor the plasmonic response and induce localization effects akin to those observed in metal nanoparticles. Moreover, by field-effect carrier modulation, we demonstrate that these localized plasmon resonances can be spatially displaced along the nanostructure body, thereby paving the way for the implementation of spatially tunable plasmonic circuits. △ Less

Submitted 4 May, 2018; originally announced May 2018.

Comments: 12 pages, 3 figures

Journal ref: Nano Lett., 2016, 16(9), pp 5688-5693

Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate

Authors: Francesco Colangelo, Vincenzo Piazza, Camilla Coletti, Stefano Roddaro, Fabio Beltram, Pasqualantonio **ue

Abstract: We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the imp… ▽ More We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy (EDS). △ Less

Submitted 2 May, 2018; originally announced May 2018.

Comments: 6 pages, 4 figures

Journal ref: Nanotechnology 28 (2017) 105709

Stretching graphene using polymeric micro-muscles

Authors: Francesco Colangelo, Alessandro Pitanti, Vaidotas Mišeikis, Camilla Coletti, Pasqualantonio **ue, Dario Pisignano, Fabio Beltram, Alessandro Tredicucci, Stefano Roddaro

Abstract: The control of strain in two-dimensional materials opens exciting perspectives for the engineering of their electronic properties. While this expectation has been validated by artificial-lattice studies, it remains elusive in the case of atomic lattices. Remarkable results were obtained on nanobubbles and nano-wrinkles, or using scanning probes; microscale strain devices were implemented exploitin… ▽ More The control of strain in two-dimensional materials opens exciting perspectives for the engineering of their electronic properties. While this expectation has been validated by artificial-lattice studies, it remains elusive in the case of atomic lattices. Remarkable results were obtained on nanobubbles and nano-wrinkles, or using scanning probes; microscale strain devices were implemented exploiting deformable substrates or external loads. These devices lack, however, the flexibility required to fully control and investigate arbitrary strain profiles. Here, we demonstrate a novel approach making it possible to induce strain in graphene using polymeric micrometric artificial muscles (MAMs) that contract in a controllable and reversible way under an electronic stimulus. Our method exploits the mechanical response of poly-methyl-methacrylate (PMMA) to electron-beam irradiation. Inhomogeneous anisotropic strain and out-of-plane deformation are demonstrated and studied by Raman, scanning-electron and atomic-force microscopy. These can all be easily combined with the present device architecture. The flexibility of the present method opens new opportunities for the investigation of strain and nanomechanics in two-dimensional materials. △ Less

Submitted 27 November, 2017; originally announced November 2017.

Journal ref: Colangelo F. et al., 2D Materials, 5 045032 (2018)

Atomic and Electronic Structure of Si Dangling Bonds in Quasi-Free-Standing Monolayer Graphene

Authors: Yuya Murata, Tommaso Cavallucci, Valentina Tozzini, Niko Pavliček, Leo Gross, Gerhard Meyer, Makoto Takamura, Hiroki Hibino, Fabio Beltram, Stefan Heun

Abstract: Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dangling bonds in QFMLG using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and density functional… ▽ More Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dangling bonds in QFMLG using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and density functional theory (DFT) calculations. Two types of defects with different contrast were observed on a flat terrace by STM and AFM. Their STM contrast varies with bias voltage. In STS, they showed characteristic peaks at different energies, 1.1 and 1.4 eV. Comparison with DFT calculations indicates that they correspond to clusters of 3 and 4 Si dangling bonds, respectively. The relevance of these results for the optimization of graphene synthesis is discussed. △ Less

Submitted 5 June, 2017; originally announced June 2017.

Journal ref: Nano Research 2018, 11(2) 864-873

Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

Authors: U. P. Gomes, D. Ercolani, V. Zannier, S. Battiato, E. Ubyivovk, V. Mikhailovskii, Y. Murata, S. Heun, F. Beltram, L. Sorba

Abstract: We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites… ▽ More We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but by careful choice of annealing and growth temperature allows to strongly reduce the relative density of these islands and to realize samples with high nanowire yield. △ Less

Submitted 18 January, 2017; originally announced January 2017.

Journal ref: Nanotechnology 28 (2017) 065603

Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts

Authors: Shaohua Xiang, Alina Mrenca-Kolasinska, Vaidotas Miseikis, Stefano Guiducci, Krzysztof Kolasinski, Camilla Coletti, Bartlomiej Szafran, Fabio Beltram, Stefano Roddaro, Stefan Heun

Abstract: Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale si… ▽ More Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale single-crystal monolayer graphene grown by chemical vapor deposition. The control of the edge trajectories is demonstrated by the observation of various fractional quantum resistances, as a result of a controllable inter-edge scattering. Experimental data are successfully modeled both numerically and within the Landauer-Buettiker formalism. Our architecture is particularly promising and unique in view of the investigation of quantum transport via scanning probe microscopy, since graphene constitutes the topmost layer of the device. For this reason, it can be approached and perturbed by a scanning probe down to the limit of mechanical contact. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 155446 (2016)

Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis

Authors: Domenico Montemurro, Daniela Stornaiuolo, Davide Massarotti, Daniele Ercolani, Lucia Sorba, Fabio Beltram, Francesco Tafuri, Stefano Roddaro

Abstract: We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence d… ▽ More We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of Josephson junctions based on High-Temperature Superconductors is discussed. △ Less

Submitted 12 April, 2016; originally announced April 2016.

Comments: 8 pages, 5 figures

Journal ref: Nanotechnology. 2015 Sep 25;26(38):385302

Low-temperature quantum transport in CVD-grown single crystal graphene

Authors: Shaohua Xiang, Vaidotas Miseikis, Luca Planat, Stefano Guiducci, Stefano Roddaro, Camilla Coletti, Fabio Beltram, Stefan Heun

Abstract: Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall react… ▽ More Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the measured single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples is located at back-gate voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than 12 flat and discernible half-integer quantum Hall plateaus have been observed in high magnetic field on both the electron and hole side of the Dirac point. At low magnetic field, the magnetoresistance shows a clear weak localization peak. Using the theory of McCann et al., we find that the inelastic scattering length is larger than 1 μm in these samples even at the charge neutrality point. △ Less

Submitted 24 March, 2016; originally announced March 2016.

Journal ref: Nano Research 2016, 9, 1823-1830

Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems

Authors: I. Aliaj, I. Torre, V. Miseikis, E. di Gennaro, A. Sambri, A. Gamucci, C. Coletti, F. Beltram, F. M. Granozio, M. Polini, V. Pellegrini, S. Roddaro

Abstract: We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed fo… ▽ More We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed. △ Less

Submitted 24 February, 2016; originally announced February 2016.

Comments: 10 pages, 3 figures

Journal ref: APL Mater. 4, 066101 (2016)

Nanoscale spin rectifiers controlled by the Stark effect

Authors: Francesco Rossella, Andrea Bertoni, Daniele Ercolani, Massimo Rontani, Lucia Sorba, Fabio Beltram, Stefano Roddaro

Abstract: The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date… ▽ More The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date, however, spin operations in DQDs were observed at sub-Kelvin temperatures, a key reason being that scaling a DQD system while retaining an independent field-effect control on the individual dots is very challenging. Here we show that quantum-confined Stark effect allows an independent addressing of two dots only 5 nm apart with no need for aligned nanometer-size local gating. We thus demonstrate a scalable method to fully control a DQD device, regardless of its physical size. In the present implementation we show InAs/InP nanowire (NW) DQDs that display an experimentally detectable SB up to 10 K. We also report and discuss an unexpected re-entrant SB lifting as a function magnetic-field intensity. △ Less

Submitted 9 December, 2015; originally announced December 2015.

Journal ref: Nature Nanotechnology 9, 997-1001 (2014)

Increasing the active surface of titanium islands on graphene by nitrogen sputtering

Authors: T. Mashoff, D. Convertino, V. Miseikis, C. Coletti, V. Piazza, V. Tozzini, F. Beltram, S. Heun

Abstract: Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the av… ▽ More Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the average diameter of the islands decreases to 5nm with monoatomic height. This results in an optimized coverage for hydrogen storage applications since the actual titanium surface available per unit graphene area is significantly increased. △ Less

Submitted 2 February, 2015; v1 submitted 10 October, 2014; originally announced October 2014.

Journal ref: Applied Physics Letters 106, 083901 (2015)

Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

Authors: Andrea Iagallo, Shinichi Tanabe, Stefano Roddaro, Makoto Takamura, Yoshiaki Sekine, Hiroki Hibino, Vaidotas Miseikis, Camilla Coletti, Vincenzo Piazza, Fabio Beltram, Stefan Heun

Abstract: The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure fr… ▽ More The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties. △ Less

Submitted 14 October, 2014; v1 submitted 8 October, 2014; originally announced October 2014.

Journal ref: Semicond. Sci. Technol. 30 (2015) 055007

Correlation between morphology and transport properties of quasi-free-standing monolayer graphene

Authors: Yuya Murata, Torge Mashoff, Makoto Takamura, Shinichi Tanabe, Hiroki Hibino, Fabio Beltram, Stefan Heun

Abstract: We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800°C. They contribute to carrier scat… ▽ More We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800°C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000°C, and they decrease the carrier mobility significantly. △ Less

Submitted 19 November, 2014; v1 submitted 1 September, 2014; originally announced September 2014.

Journal ref: Applied Physics Letters 105, 221604 (2014)

Large thermal biasing of individual gated nanostructures

Authors: Stefano Roddaro, Daniele Ercolani, Mian Akif Safeen, Francesco Rossella, Vincenzo Piazza, Francesco Giazotto, Lucia Sorba, Fabio Beltram

Abstract: We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating plat… ▽ More We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device. △ Less

Submitted 8 January, 2014; v1 submitted 10 December, 2013; originally announced December 2013.

Comments: 6 pages, 6 figures

Giant thermovoltage in single InAs-nanowire field-effect transistors

Authors: Stefano Roddaro, Daniele Ercolani, Mian Akif Safeen, Soile Suomalainen, Francesco Rossella, Francesco Giazotto, Lucia Sorba, Fabio Beltram

Abstract: Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise map** of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between r… ▽ More Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise map** of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between room temperature and 100K$. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices. △ Less

Submitted 10 December, 2013; originally announced December 2013.

Comments: 6 pages, 4 figures

Journal ref: Nano Lett. 13, 3638 (2013)

Hydrogen storage with titanium-functionalized graphene

Authors: Torge Mashoff, Makoto Takamura, Shinichi Tanabe, Hiroki Hibino, Fabio Beltram, Stefan Heun

Abstract: We report on hydrogen adsorption and desorption on titanium-covered graphene in order to test theoretical proposals to use of graphene functionalized with metal atoms for hydrogen storage. At room temperature titanium islands grow with an average diameter of about 10 nm. Samples were then loaded with hydrogen, and its desorption kinetics was studied by thermal desorption spectroscopy. We observe t… ▽ More We report on hydrogen adsorption and desorption on titanium-covered graphene in order to test theoretical proposals to use of graphene functionalized with metal atoms for hydrogen storage. At room temperature titanium islands grow with an average diameter of about 10 nm. Samples were then loaded with hydrogen, and its desorption kinetics was studied by thermal desorption spectroscopy. We observe the desorption of hydrogen in the temperature range between 400K and 700 K. Our results demonstrate the stability of hydrogen binding at room temperature and show that hydrogen desorbs at moderate temperatures in line with what required for practical hydrogen-storage applications. △ Less

Submitted 5 December, 2013; originally announced December 2013.

Journal ref: Appl. Phys. Lett. 103, 013903 (2013)

Selective control of edge-channel trajectories by scanning gate microscopy

Authors: N. Paradiso, S. Heun, S. Roddaro, L. N. Pfeiffer, K. W. West, L. Sorba, G. Biasiol, F. Beltram

Abstract: Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge channels. Here we demonstrate the precise control of individual edge-channel trajectories in quantum point contact devices in the QH regime. The biased tip of… ▽ More Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge channels. Here we demonstrate the precise control of individual edge-channel trajectories in quantum point contact devices in the QH regime. The biased tip of an atomic force microscope is used as a moveable local gate to pilot individual edge channels. Our results are discussed in light of the implementation of multi-edge interferometers. △ Less

Submitted 5 December, 2013; originally announced December 2013.

Journal ref: Physica E 42, 1038 (2010)

The Influence of Graphene Curvature on Hydrogen Adsorption: Towards Hydrogen Storage Devices

Authors: Sarah Goler, Camilla Coletti, Valentina Tozzini, Vincenzo Piazza, Torge Mashoff, Fabio Beltram, Vittorio Pellegrini, Stefan Heun

Abstract: The ability of atomic hydrogen to chemisorb on graphene makes the latter a promising material for hydrogen storage. Based on scanning tunneling microscopy techniques, we report on site-selective adsorption of atomic hydrogen on convexly curved regions of monolayer graphene grown on SiC(0001). This system exhibits an intrinsic curvature owing to the interaction with the substrate. We show that at l… ▽ More The ability of atomic hydrogen to chemisorb on graphene makes the latter a promising material for hydrogen storage. Based on scanning tunneling microscopy techniques, we report on site-selective adsorption of atomic hydrogen on convexly curved regions of monolayer graphene grown on SiC(0001). This system exhibits an intrinsic curvature owing to the interaction with the substrate. We show that at low coverage hydrogen is found on convex areas of the graphene lattice. No hydrogen is detected on concave regions. These findings are in agreement with theoretical models which suggest that both binding energy and adsorption barrier can be tuned by controlling the local curvature of the graphene lattice. This curvature-dependence combined with the known graphene flexibility may be exploited for storage and controlled release of hydrogen at room temperature making it a valuable candidate for the implementation of hydrogen-storage devices. △ Less

Submitted 28 November, 2013; originally announced November 2013.

Journal ref: J. Phys. Chem. 117 (2013) 11506

Scanning Gate Imaging of quantum point contacts and the origin of the 0.7 Anomaly

Authors: Andrea Iagallo, Nicola Paradiso, Stefano Roddaro, Christian Reichl, Werner Wegscheider, Giorgio Biasiol, Lucia Sorba, Fabio Beltram, Stefan Heun

Abstract: The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open… ▽ More The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open issue is whether point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-1D constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems. △ Less

Submitted 4 September, 2014; v1 submitted 25 November, 2013; originally announced November 2013.

Journal ref: Nano Research 8 (2015) 948-956

High-contrast Aharonov-Bohm oscillations in the acoustoelectric transport regime

Authors: E. Strambini, E. Ligarò, F. Beltram, H. Beere, C. A. Nicoll, D. A. Ritchie, V. Piazza

Abstract: Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight… ▽ More Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight a close analogy between acoustoelectric transport and thermoelectric properties in ballistic devices. △ Less

Submitted 5 September, 2013; originally announced September 2013.

Resolving the effects of frequency dependent dam** and quantum phase diffusion in YBa$_2$Cu$_3$O$_{7-x}$ Josephson junctions

Authors: D. Stornaiuolo, G. Rotoli, D. Massarotti, F. Carillo, L. Longobardi, F. Beltram, F. Tafuri

Abstract: We report on the study of the phase dynamics of high critical temperature superconductor Josephson junctions. We realized YBa$_2$Cu$_3$O$_{7-x}$ (YBCO) grain boundary (GB) biepitaxial junctions in the submicron scale, using low loss substrates, and analyzed their dissipation by comparing the transport measurements with Monte Carlo simulations. The behavior of the junctions can be fitted using a mo… ▽ More We report on the study of the phase dynamics of high critical temperature superconductor Josephson junctions. We realized YBa$_2$Cu$_3$O$_{7-x}$ (YBCO) grain boundary (GB) biepitaxial junctions in the submicron scale, using low loss substrates, and analyzed their dissipation by comparing the transport measurements with Monte Carlo simulations. The behavior of the junctions can be fitted using a model based on two quality factors, which results in a frequency dependent dam**. Moreover, our devices can be designed to have Josephson energy of the order of the Coulomb energy. In this unusual energy range, phase delocalization strongly influences the device's dynamics, promoting the transition to a quantum phase diffusion regime. We study the signatures of such a transition by combining the outcomes of Monte Carlo simulations with the analysis of the device's parameters, the critical current and the temperature behavior of the low voltage resistance $R_0$. △ Less

Submitted 29 June, 2013; originally announced July 2013.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. B 87, 134517 (2013)

Imaging backscattering through impurity-induced antidots in quantum Hall constrictions

Authors: Nicola Paradiso, Stefan Heun, Stefano Roddaro, Giorgio Biasiol, Lucia Sorba, Davide Venturelli, Fabio Taddei, Vittorio Giovannetti, Fabio Beltram

Abstract: We exploit the biased tip of a scanning gate microscope (SGM) to induce a controlled backscattering between counter-propagating edge channels in a wide constriction in the quantum Hall regime. We compare our detailed conductance maps with a numerical percolation model and demonstrate that conductance fluctuations observed in these devices as a function of the gate voltage originate from backscatte… ▽ More We exploit the biased tip of a scanning gate microscope (SGM) to induce a controlled backscattering between counter-propagating edge channels in a wide constriction in the quantum Hall regime. We compare our detailed conductance maps with a numerical percolation model and demonstrate that conductance fluctuations observed in these devices as a function of the gate voltage originate from backscattering events mediated by localized states pinned by potential fluctuations. Our imaging technique allows us to identify the necessary conditions for the activation of these backscattering processes and also to reconstruct the constriction confinement potential profile and the underlying disorder. △ Less

Submitted 11 September, 2012; originally announced September 2012.

Journal ref: Physical Review B 86, 085326 (2012)

Coherent transport in extremely underdoped Nd1.2Ba1.8Cu3Oz nanostructures

Authors: Franco Carillo, Gabriella Maria De Luca, Domenico Montemurro, Gianpaolo Papari, Marco Salluzzo, Daniela Stornaiuolo, Francesco Tafuri, Fabio Beltram

Abstract: Proximity-effect and resistance magneto-fluctuations measurements in submicron Nd1.2Ba1.8Cu3Oz (NBCO) nano-loops are reported to investigate coherent charge transport in the non-superconducting state. We find an unexpected inhibition of cooper pair transport, and a destruction of the induced superconductivity, by lowering the temperature from 6K to 250mK. This effect is accompanied by a significan… ▽ More Proximity-effect and resistance magneto-fluctuations measurements in submicron Nd1.2Ba1.8Cu3Oz (NBCO) nano-loops are reported to investigate coherent charge transport in the non-superconducting state. We find an unexpected inhibition of cooper pair transport, and a destruction of the induced superconductivity, by lowering the temperature from 6K to 250mK. This effect is accompanied by a significant change in the conductance-voltage characteristics and in the zero bias conductance response to the magnetic field pointing to the activation of a strong pair breaking mechanism at lower temperature. The data are discussed in the framework of mesoscopic effects specific to superconducting nanostructures, proximity effect and high temperature superconductivity. △ Less

Submitted 20 July, 2012; originally announced July 2012.

Comments: to appear on new journal of Physics

Journal ref: New J. Phys. 14 (2012) 083025

Imaging fractional incompressible stripes in integer quantum Hall systems

Authors: Nicola Paradiso, Stefan Heun, Stefano Roddaro, Lucia Sorba, Fabio Beltram, Giorgio Biasiol, L. N. Pfeiffer, K. W. West

Abstract: Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a… ▽ More Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a deeper-than-ever investigation of spatial features of such edge systems. Here we use scanning gate microscopy and demonstrate that fractional features were unambiguously observed in every integer quantum Hall constriction studied. We present also an experimental estimate of the width of the fractional incompressible stripes corresponding to filling factors 1/3, 2/5, 3/5, and 2/3. Our results compare well with predictions of the edge-reconstruction theory. △ Less

Submitted 2 May, 2012; originally announced May 2012.

Journal ref: Physical Review Letters 108, 246801 (2012)

High critical-current density and scaling of phase-slip processes in YBaCuO nanowires

Authors: G. Papari, F. Carillo, D. Stornaiuolo, L. Longobardi, F. Beltram, F. Tafuri

Abstract: YBaCuO nanowires were reproducibly fabricated down to widths of 50 nm. A Au/Ti cap layer on YBCO yielded high electrical performance up to temperatures above 80 K in single nanowires. Critical current density of tens of MA/cm2 at T = 4.2 K and of 10 MA/cm2 at 77 K were achieved that survive in high magnetic fields. Phase-slip processes were tuned by choosing the size of the nanochannels and the in… ▽ More YBaCuO nanowires were reproducibly fabricated down to widths of 50 nm. A Au/Ti cap layer on YBCO yielded high electrical performance up to temperatures above 80 K in single nanowires. Critical current density of tens of MA/cm2 at T = 4.2 K and of 10 MA/cm2 at 77 K were achieved that survive in high magnetic fields. Phase-slip processes were tuned by choosing the size of the nanochannels and the intensity of the applied external magnetic field. Data indicate that YBCO nanowires are rather attractive system for the fabrication of efficient sensors, supporting the notion of futuristic THz devices. △ Less

Submitted 9 January, 2012; originally announced January 2012.

Comments: 8 pages, 3 figures. Accepted for publication in Superconductor Science and Technology

Journal ref: Supercond. Sci. Technol. 25, 035011 (2012)

Impact of electron heating on the equilibration between quantum Hall edge channels

Authors: Nicola Paradiso, Stefan Heun, Stefano Roddaro, Lucia Sorba, Fabio Beltram, Giorgio Biasiol

Abstract: When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between co-propagating edge channels whose length can be controlled with continuity. Such a variable device allows us to investigate how current-voltage characteristics evol… ▽ More When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between co-propagating edge channels whose length can be controlled with continuity. Such a variable device allows us to investigate how current-voltage characteristics evolve when the junction length d is changed. Recent experiments with fixed geometry reported a significant reduction of the threshold voltage for the onset of photon emission, whose origin is still under debate. Our spatially resolved measurements reveal that this threshold shift depends on the junction length. We discuss this unexpected result on the basis of a model which demonstrates that a heating of electrons is the dominant process responsible for the observed reduction of the threshold voltage. △ Less

Submitted 12 December, 2011; originally announced December 2011.

Journal ref: Physical Review B 84, 235318 (2011)

Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene

Authors: Sarah Goler, Camilla Coletti, Vincenzo Piazza, Pasqualantonio **ue, Francesco Colangelo, Vittorio Pellegrini, Konstantin V. Emtsev, Stiven Forti, Ulrich Starke, Fabio Beltram, Stefan Heun

Abstract: On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunne… ▽ More On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunneling microscopy (STM) studies of the buffer layer and of quasi-free-standing monolayer graphene (QFMLG) that is obtained by decoupling the buffer layer from the SiC(0001) substrate by means of hydrogen intercalation. Atomic resolution STM images of the buffer layer reveal that, within the periodic structural corrugation of this interfacial layer, the arrangement of atoms is topologically identical to that of graphene. After hydrogen intercalation, we show that the resulting QFMLG is relieved from the periodic corrugation and presents no detectable defect sites. △ Less

Submitted 2 August, 2013; v1 submitted 21 November, 2011; originally announced November 2011.

Journal ref: Carbon 51 (2013) 249

Lasing in planar semiconductor diodes

Authors: Giorgio De Simoni, Lukas Mahler, Vincenzo Piazza, Alessandro Tredicucci, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, Fabio Beltram

Abstract: We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. △ Less

Submitted 7 November, 2011; originally announced November 2011.

Anti-bunched photons from a lateral light-emitting diode

Authors: Tommaso Lunghi, Giorgio De Simoni, Vincenzo Piazza, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, Fabio Beltram

Abstract: We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we bel… ▽ More We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we believe our devices are an appealing substitute for highly-attenuated lasers in existing quantum-key-distribution systems. Our devices outperform strongly-attenuated lasers in terms of multi-photon emission events and can therefore lead to a significant security improvement in existing quantum key distribution systems. △ Less

Submitted 22 September, 2011; originally announced September 2011.

Controlled coupling of spin-resolved quantum Hall edge states

Authors: Biswajit Karmakar, Davide Venturelli, Luca Chirolli, Fabio Taddei, Vittorio Giovannetti, Rosario Fazio, Stefano Roddaro, Giorgio Biasiol, Lucia Sorba, Vittorio Pellegrini, Fabio Beltram

Abstract: Topologically-protected edge states are dissipationless conducting surface states immune to impurity scattering and geometrical defects that occur in electronic systems characterized by a bulk insulating gap. One example can be found in a two-dimensional electron gas (2DEG) under high magnetic field in the quantum Hall regime. Based on the coherent control of the coupling between these protected s… ▽ More Topologically-protected edge states are dissipationless conducting surface states immune to impurity scattering and geometrical defects that occur in electronic systems characterized by a bulk insulating gap. One example can be found in a two-dimensional electron gas (2DEG) under high magnetic field in the quantum Hall regime. Based on the coherent control of the coupling between these protected states, several theoretical proposals for the implementation of information processing architectures were proposed. Here we introduce and experimentally demonstrate a new method that allows us to controllably couple co-propagating spin-resolved edge states of a QH insulator. The scheme exploits a spatially-periodic in-plane magnetic field that is created by an array of Cobalt nano-magnets placed at the boundary of the 2DEG. A maximum charge/spin transfer of about 28% is achieved at 250 mK. This result may open the way to the realization of scalable quantum-information architectures exploiting the spin degree of freedom of topologically-protected states. △ Less

Submitted 2 December, 2011; v1 submitted 20 June, 2011; originally announced June 2011.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Lett. 107, 236804 (2011)

Self-assembly and electron-beam-induced direct etching of suspended graphene nanostructures

Authors: Sarah Goler, Vincenzo Piazza, Stefano Roddaro, Vittorio Pellegrini, Fabio Beltram, Pasqualantonio **ue

Abstract: We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their residue-free deposition on a silicon dioxide substrate. This deposition system creates a blistered graphene surface due to strain induced by the transfer process its… ▽ More We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their residue-free deposition on a silicon dioxide substrate. This deposition system creates a blistered graphene surface due to strain induced by the transfer process itself. Single-layer-graphene deposition and its "blistering" on the substrate are demonstrated by a combination of Raman spectroscopy, scanning electron microscopy and atomic-force microscopy measurements. Finally, we demonstrate that blister-like suspended graphene are self-supporting single-layer structures and can be flattened by employing a spatially-resolved direct-lithography technique based on electron-beam induced etching. △ Less

Submitted 28 May, 2011; originally announced May 2011.

Comments: 17 pages, 5 figures