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First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes
Authors:
Martin Keller,
Abderrezak Belabbes,
Jürgen Furthmüller,
Friedhelm Bechstedt,
Silvana Botti
Abstract:
Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the…
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Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the framework of a generalized Ising model, shows that the diamond structure is the most stable under ambient conditions, but hexagonal modifications are close to the phase boundary, especially for Si. Our band-structure calculations using the MBJLDA and HSE06 exchange correlation functionals predict significant changes in electronic states with hexagonality. While Si crystals are always semiconductors with indirect band gaps, the hexagonal Ge polytypes have direct band gaps. The branch point energies for Ge crystals are below the valence band maxima, and therefore the formation of hole gases on Ge surfaces is favoured. Band alignment based on the branch point energy leads to type-I heterocrystalline interfaces between Ge polytypes, where electrons and holes can be trapped in the layer with the higher hexagonality. In contrast, the energy shift of the indirect conduction band minima of Si polytypes is rather weak, leading to delocalization of excited electrons at interfaces, while only holes can localize in the layer with higher hexagonality.
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Submitted 21 February, 2023;
originally announced February 2023.
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Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces
Authors:
Abderrezak Belabbes,
Silvana Botti,
Friedhelm Bechstedt
Abstract:
The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys are investigated by a variety of methods: density functional theory for atomic geometries, approximate quasiparticle treatments for electronic structures, different band edge alignment procedures, and construction of various hexagonal unit cells to model alloys and heterojunctions. We demonstrate that…
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The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys are investigated by a variety of methods: density functional theory for atomic geometries, approximate quasiparticle treatments for electronic structures, different band edge alignment procedures, and construction of various hexagonal unit cells to model alloys and heterojunctions. We demonstrate that the natural band offsets are rather unaffected by the choice to align the vacuum level or the branch point energy, as well as by the use of a hybrid or the Tran-Blaha functional. At interfaces between Ge-rich alloys we observe a type-I heterocharacter with direct band gaps, while Si-rich junctions are type-I but with an indirect band gap. The true band lineups at pseudomorphically grown heterostructures are strongly influenced by the generated biaxial strain of opposite sign in the two adjacent alloys. Our calculations show that the type-I character of the interface is reduced by strain. To prepare alloy heterojunctions suitable for active optoelectronic applications, we discuss how to decrease the compressive biaxial strain at Ge-rich alloys.
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Submitted 6 May, 2022;
originally announced May 2022.
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Giant optical oscillator strengths in perturbed hexagonal germanium
Authors:
Abderrezak Belabbes,
Friedhelm Bechstedt,
Silvana Botti
Abstract:
We present ab initio calculations of electronic and optical properties of perturbed hexagonal germanium and demonstrate that it is a superior material for active optoelectronic devices in the infrared spectral region. It is known that perfect lonsdaleite Ge is a pseudodirect semiconductor, i.e., with direct fundamental band gap but almost vanishing oscillator strength for the lowest-energy optical…
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We present ab initio calculations of electronic and optical properties of perturbed hexagonal germanium and demonstrate that it is a superior material for active optoelectronic devices in the infrared spectral region. It is known that perfect lonsdaleite Ge is a pseudodirect semiconductor, i.e., with direct fundamental band gap but almost vanishing oscillator strength for the lowest-energy optical transitions. Perturbing the system by replacing a Ge atom in the unit cell with a Si atom boosts of the oscillator strength at the minimum direct gap by orders of magnitude, with a concurrent blue shift of the interband distances. This effect is mainly due to the increased s character of the lowest conduction band because of the perturbation-induced wave function mixing. A purely structural modification of the lonsdaleite unit cell of hexagonal Ge yields as well increased optical oscillator strengths, but their magnitude significantly depends on the actual details of the atomic geometry. In particular, moderate tensile uniaxial strain can induce an inversion of the order of the two lowest conduction bands, immediately leading to an extremely efficient enhancement of optical transitions. In general, chemical and/or structural perturbations of the lonsdaleite lattice are shown to be the key to make hexagonal germanium suitable for light emitting devices.
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Submitted 15 December, 2021;
originally announced December 2021.
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Indirect Chiral Magnetic Exchange through Dzyaloshinskii-Moriya--Enhanced RKKY Interactions in Manganese Oxide Chains on Ir(100)
Authors:
Martin Schmitt,
Paolo Moras,
Gustav Bihlmayer,
Ryan Cotsakis,
Matthias Vogt,
Jeannette Kemmer,
Abderrezak Belabbes,
Polina M. Sheverdyaeva,
Asish K. Kundu,
Carlo Carbone,
Stefan Blügel,
Matthias Bode
Abstract:
Ruderman-Kittel-Kasuya-Yosida interaction even if their wave functions lack direct overlap. Theory predicts that spin-orbit scattering leads to a Dzyaloshinskii-Moriya type enhancement of this indirect exchange interaction, giving rise to chiral exchange terms. Here we present a combined spin-polarized scanning tunneling microscopy, angle-resolved photoemission, and density functional theory study…
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Ruderman-Kittel-Kasuya-Yosida interaction even if their wave functions lack direct overlap. Theory predicts that spin-orbit scattering leads to a Dzyaloshinskii-Moriya type enhancement of this indirect exchange interaction, giving rise to chiral exchange terms. Here we present a combined spin-polarized scanning tunneling microscopy, angle-resolved photoemission, and density functional theory study of MnO$_2$ chains on Ir(100). Whereas we find antiferromagnetic Mn--Mn coupling along the chain, the inter-chain coupling across the non-magnetic Ir substrate turns out to be chiral with a $120^{\circ}$ rotation between adjacent MnO$_2$ chains. Calculations reveal that the Dzyaloshinskii-Moriya interaction results in spin spirals with a periodicity in agreement with experiment. Our findings confirm the existence of indirect chiral magnetic exchange, potentially giving rise to exotic phenomena, such as chiral spin-liquid states in spin ice systems or the emergence of new quasiparticles.
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Submitted 18 June, 2019;
originally announced June 2019.
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Modeling Dzyaloshinskii-Moriya Interaction at Transition Metal Interfaces: Constrained Moment versus Generalized Bloch Theorem
Authors:
Yao-Jun Dong,
Abderrezak Belabbes,
Aurélien Manchon
Abstract:
Dzyaloshinskii-Moriya interaction (DMI) at Pt/Co interfaces is investigated theoretically using two different first principles methods. The first one uses the constrained moment method to build a spin spiral in real space, while the second method uses the generalized Bloch theorem approach to construct a spin spiral in reciprocal space. We show that although the two methods produce an overall simi…
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Dzyaloshinskii-Moriya interaction (DMI) at Pt/Co interfaces is investigated theoretically using two different first principles methods. The first one uses the constrained moment method to build a spin spiral in real space, while the second method uses the generalized Bloch theorem approach to construct a spin spiral in reciprocal space. We show that although the two methods produce an overall similar total DMI energy, the dependence of DMI as a function of the spin spiral wavelength is dramatically different. We suggest that long-range magnetic interactions, that determine itinerant magnetism in transition metals, are responsible for this discrepancy. We conclude that the generalized Bloch theorem approach is more adapted to model DMI in transition metal systems, where magnetism is delocalized, while the constrained moment approach is mostly applicable to weak or insulating magnets, where magnetism is localized.
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Submitted 29 October, 2017;
originally announced October 2017.
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Microscopic Origin of Interfacial Dzyaloshinskii-Moriya Interaction
Authors:
Sanghoon Kim,
Kohei Ueda,
Gyungchoon Go,
Peong-Hwa Jang,
Kyung-** Lee,
Abderrezak Belabbes,
Aurelien Manchon,
Motohiro Suzuki,
Yoshinori Kotani,
Tetsuya Nakamura,
Kohji Nakamura,
Tomohiro Koyama,
Daichi Chiba,
Kihiro Yamada,
Duck-Ho Kim,
Takahiro Moriyama,
Kab-** Kim,
Teruo Ono
Abstract:
Chiral spin textures at the interface between ferromagnetic and heavy nonmagnetic metals, such as Neel-type domain walls and skyrmions, have been studied intensively because of their great potential for future nanomagnetic devices. The Dyzaloshinskii-Moriya interaction (DMI) is an essential phenomenon for the formation of such chiral spin textures. In spite of recent theoretical progress aiming at…
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Chiral spin textures at the interface between ferromagnetic and heavy nonmagnetic metals, such as Neel-type domain walls and skyrmions, have been studied intensively because of their great potential for future nanomagnetic devices. The Dyzaloshinskii-Moriya interaction (DMI) is an essential phenomenon for the formation of such chiral spin textures. In spite of recent theoretical progress aiming at understanding the microscopic origin of the DMI, an experimental investigation unravelling the physics at stake is still required. Here, we experimentally demonstrate the close correlation of the DMI with the anisotropy of the orbital magnetic moment and with the magnetic dipole moment of the ferromagnetic metal. The density functional theory and the tight-binding model calculations reveal that asymmetric electron occupation in orbitals gives rise to this correlation.
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Submitted 10 April, 2017;
originally announced April 2017.
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Hund's rule-driven Dzyaloshinskii-Moriya interaction at 3d-5d interfaces
Authors:
A. Belabbes,
G. Bihlmayer,
F. Bechstedt,
S. Blügel,
A. Manchon
Abstract:
Using relativistic first-principles calculations, we show that the chemical trend of Dzyaloshinskii-Moriya interaction (DMI) in 3d-5d ultrathin films follows Hund's first rule with a tendency similar to their magnetic moments in either the unsupported 3d monolayers or 3d-5d interfaces. We demonstrate that, besides the spin-orbit coupling (SOC) effect in inversion asymmetric noncollinear magnetic s…
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Using relativistic first-principles calculations, we show that the chemical trend of Dzyaloshinskii-Moriya interaction (DMI) in 3d-5d ultrathin films follows Hund's first rule with a tendency similar to their magnetic moments in either the unsupported 3d monolayers or 3d-5d interfaces. We demonstrate that, besides the spin-orbit coupling (SOC) effect in inversion asymmetric noncollinear magnetic systems, the driving force is the 3d orbital occupation and their spin flip/mixing processes with the spin-orbit active 5d states control directly the sign and magnitude of the DMI. The magnetic chirality changes are discussed in the light of the interplay between SOC, Hund's first rule, and the crystal field splitting of d orbitals.
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Submitted 12 September, 2016;
originally announced September 2016.
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Oxygen-enabled control of Dzyaloshinskii-Moriya Interaction in ultra-thin magnetic films
Authors:
Abderrezak Belabbes,
Gustav Bihlmayer,
Stefan Blügel,
Aurelien Manchon
Abstract:
The search for chiral magnetic textures in systems lacking spatial inversion symmetry has attracted a massive amount of interest in the recent years with the real space observation of novel exotic magnetic phases such as skyrmions lattices, but also domain walls and spin spirals with a defined chirality. The electrical control of these textures offers thrilling perspectives in terms of fast and ro…
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The search for chiral magnetic textures in systems lacking spatial inversion symmetry has attracted a massive amount of interest in the recent years with the real space observation of novel exotic magnetic phases such as skyrmions lattices, but also domain walls and spin spirals with a defined chirality. The electrical control of these textures offers thrilling perspectives in terms of fast and robust ultrahigh density data manipulation. A powerful ingredient commonly used to stabilize chiral magnetic states is the so-called Dzyaloshinskii-Moriya interaction (DMI) arising from spin-orbit coupling in inversion asymmetric magnets. Such a large antisymmetric exchange has been obtained at interfaces between heavy metals and transition metal ferromagnets, resulting in spin spirals and nanoskyrmion lattices. Here, using relativistic first-principles calculations, we demonstrate that the magnitude and sign of DMI can be entirely controlled by tuning the oxygen coverage of the magnetic film, therefore enabling the smart design of chiral magnetism in ultra-thin films. We anticipate that these results extend to other electronegative ions and suggest the possibility of electrical tuning of exotic magnetic phases.
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Submitted 5 November, 2015;
originally announced November 2015.
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Electronic bands of III-V semiconductor polytypes and their alignment
Authors:
Abderrezak Belabbes,
Christian Panse,
Jürgen Furthmüller,
Friedhelm Bechstedt
Abstract:
The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme, the LDA-1/2 method. The results are used to derive band offsets
$ΔE_c$ and $ΔE_v$ for the conduction and valence bands between two polytypes. The alignment of t…
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The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme, the LDA-1/2 method. The results are used to derive band offsets
$ΔE_c$ and $ΔE_v$ for the conduction and valence bands between two polytypes. The alignment of the band structures is based on the branch-point energy
$E_{\rm BP}$ for each polytype. The aligned electronic structures are used to explain properties of heterocrystalline but homomaterial junctions.
The gaps and offsets allow to discuss spectroscopic results obtained recently for such junctions in III-V nanowires.
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Submitted 11 June, 2012;
originally announced June 2012.
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Direct experimental determination of the spontaneous polarization of GaN
Authors:
Jonas Lähnemann,
Oliver Brandt,
Uwe Jahn,
Carsten Pfüller,
Claudia Roder,
Pinar Dogan,
Frank Grosse,
Abderrezak Belabbes,
Friedhelm Bechstedt,
Achim Trampert,
Lutz Geelhaar
Abstract:
We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing micro-photoluminescence and cathodoluminescence spectroscopy, we observe emission lines from the intrinsic and extrinsic stacking faults in strain-free GaN micro-crystals. By…
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We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing micro-photoluminescence and cathodoluminescence spectroscopy, we observe emission lines from the intrinsic and extrinsic stacking faults in strain-free GaN micro-crystals. By treating the polarization sheet charges associated with these stacking faults as a plate capacitor, Psp can be obtained from the observed transition energies with no additional assumptions. Self-consistent Poisson-Schroedinger calculations, aided by the microscopic electrostatic potential computed using density-functional theory, lead to nearly identical values for Psp. Our recommended value for Psp of GaN is -0.022+/-0.007 C/m^{2}.
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Submitted 6 August, 2012; v1 submitted 20 January, 2012;
originally announced January 2012.
