Showing 1–50 of 58 results for author: Bel'kov, V V

Photocurrents in bulk tellurium

Authors: M. D. Moldavskaya, L. E. Golub, S. N. Danilov, V. V. Bel'kov, D. Weiss, S. D. Ganichev

Abstract: We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photoc… ▽ More We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photocurrents have not been reported before and are well explained by the developed phenomenological and microscopic theory. We show that the effects can be unambiguously distinguished by studying the polarization, magnetic field, and radiation frequency dependence of the photocurrent. At frequencies around 30 THz, the photocurrents are shown to be caused by the direct optical transitions between subbands in the valence band. At lower frequencies of 1 to 3 THz, used in our experiment, these transitions become impossible and the detected photocurrents are caused by the indirect optical transitions (Drude-like radiation absorption). △ Less

Submitted 6 December, 2023; v1 submitted 24 August, 2023; originally announced August 2023.

Comments: 22 pages, 9 figures

Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates

Authors: Erwin Mönch, Stefan Hubmann, Ivan Yahniuk, Sophia Schweiss, Vasily V. Bel'kov, Leonid E. Golub, Robin Huber, Jonathan Eroms, Kenji Watanabe, Takashi Taniguchi, Dieter Weiss, Sergey D. Ganichev

Abstract: We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in structures of two designs with dual grating gate fabricated on top of encapsulated bilayer graphene and beneath it. The strength and sign of the photocurrent can be… ▽ More We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in structures of two designs with dual grating gate fabricated on top of encapsulated bilayer graphene and beneath it. The strength and sign of the photocurrent can be controllably varied by changing the bias voltages applied to individual dual grating subgates and the back gate. The current consists of contributions insensitive to the radiation's polarization state, defined by the orientation of the radiation electric field vector with respect to the dual grating gate metal stripes, and the circular ratchet sensitive to the radiation helicity. We show that intense terahertz radiation results in a nonlinear intensity dependence caused by electron gas heating. At room temperature the ratchet current saturates at high intensities of the order of hundreds to several hundreds of kWcm$^{-2}$. At $T = 4 {\rm K}$, the nonlinearity manifests itself at intensities that are one or two orders of magnitude lower, moreover, the photoresponse exhibits a complex dependence on the intensity, including a saturation and even a change of sign with increasing intensity. This complexity is attributed to the interplay of the Seebeck ratchet and the dynamic carrier density redistribution, which feature different intensity dependencies and a nonlinear behavior of the sample's conductivity induced by electron gas heating. Our study demonstrates that graphene-based asymmetric dual grating gate devices can be used as terahertz detectors at room temperature over a wide dynamic range, spanning many orders of magnitude of terahertz radiation power. Therefore, their integration together with current-driven read-out electronics is attractive for the operation with high-power pulsed sources. △ Less

Submitted 27 June, 2023; originally announced June 2023.

Comments: 11 pages, 13 figures

Cyclotron- and magnetoplasmon resonances in bilayer graphene ratchets

Authors: Erwin Mönch, Sergey O. Potashin, Katja Lindner, Ivan Yahniuk, Leonid E. Golub, Valentin Yu. Kachorovskii, Vassily V. Bel'kov, Robin Huber, Kenji Watanabe, Takashi Taniguchi, Jonathan Eroms, Dieter Weiss, Sergey D. Ganichev

Abstract: We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by e… ▽ More We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by electron-electron interaction: the plasmonic splitting of the resonance due to long-range Coulomb coupling and the partial suppression of its second harmonic due to fast interparticle collisions. We develop a theory which perfectly fits our data. We argue that the ratchet current is generated in the hydrodynamic regime of non-ideal electron liquid. △ Less

Submitted 17 August, 2022; originally announced August 2022.

Comments: 13 pages, 10 figures

THz ratchet effect in HgTe interdigitated structures

Authors: I. Yahniuk, G. V. Budkin, A. Kazakov, M. Otteneder, J. Ziegler, D. Weiss, N. N. Mikhailov, S. A. Dvoretskii, T. Wojciechowski, V. V. Bel'kov, W. Knap, S. D. Ganichev

Abstract: The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band str… ▽ More The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band structure properties. Applying polarized terahertz laser radiation we detected linear and polarization independent ratchets, as well as an radiation-helicity driven circular ratchet effect. Studying the ratchet effect in devices made of quantum wells (QWs) of different thickness we observed that the magnitude of the signal substantially increases with decreasing QW width with a maximum value for devices made of QWs of critical thickness hosting Dirac fermions. Furthermore, swee** the gate voltage amplitude we observed sign-alternating oscillations for gate voltages corresponding to p-type conductivity. The amplitude of the oscillations is more than two orders of magnitude larger than the signal for n-type conducting QWs. The oscillations and the signal enhancement are shown to be caused by the complex valence band structure of HgTe-based QWs. These peculiar features of the ratchet currents make these materials an ideal platform for the development of THz applications. △ Less

Submitted 28 February, 2022; originally announced February 2022.

Comments: 9 pages, 6 figures

Ratchet effect in spatially modulated bilayer graphene: Signature of hydrodynamic transport

Authors: Erwin Mönch, Sergey O. Potashin, Katja Lindner, Ivan Yahniuk, Leonid E. Golub, Valentin Yu. Kachorovskii, Vasily V. Bel'kov, Robin Huber, Kenji Watanabe, Takashi Taniguchi, Jonathan Eroms, Dieter Weiss, Sergey D. Ganichev

Abstract: We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as… ▽ More We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as $ \propto 1/ω^2$, while at low temperature, $T = 4.2~\textrm{K}$, the frequency dependence becomes much stronger $\propto 1/ω^6$. The developed theory shows that the frequency dependence of the ratchet current is very sensitive to the ratio of the electron-impurity and electron-electron scattering rates. The theory predicts that the dependence $1/ω^6$ is realized in the hydrodynamic regime, when electron-electron scattering dominates, while $1/ω^2$ is specific for the drift-diffusion approximation. Therefore, our experimental observation of a very strong frequency dependence reveals the emergence of the hydrodynamic regime. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 21 pages, 12 figures

Edge photocurrent in bilayer graphene due to inter-Landau-level transitions

Authors: S. Candussio, M. V. Durnev, S. Slizovskiy, T. Jötten, J. Keil, V. V. Bel'kov, J. Yin, Y. Yang, S. -K. Son, A. Mishchenko, V. Fal'ko, S. D. Ganichev

Abstract: We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotro… ▽ More We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotron resonance (CR) and produce strong resonant features, the inter-band-LL resonances have quantum nature and lead to the weaker features in the measured photocurrent spectra. The magnitude and polarization properties of the observed features agree with the semiclassical theory of the intra-band edge photogalvanic effect, including its Shubnikov-de-Haas oscillations at low temperatures. △ Less

Submitted 24 February, 2021; v1 submitted 12 November, 2020; originally announced November 2020.

Comments: 11 pages, 11 figures

Journal ref: Phys. Rev. B 103, 125408 (2021)

Edge photocurrent driven by THz electric field in bi-layer graphene

Authors: S. Candussio, M. V. Durnev, S. A. Tarasenko, J. Yin, J. Keil, Y. Yang, S. -K. Son, A. Mishchenko, H. Plank, V. V. Bel'kov, S. Slizovskiy, V. Fal'ko, S. D. Ganichev

Abstract: We report on the observation of edge electric currents excited in bi-layer graphene by terahertz laser radiation. We show that the current generation belongs to the class of second order in electric field phenomena and is controlled by the orientation of the THz electric field polarization plane. Additionally, applying a small magnetic field normal to the graphene plane leads to a phase shift in t… ▽ More We report on the observation of edge electric currents excited in bi-layer graphene by terahertz laser radiation. We show that the current generation belongs to the class of second order in electric field phenomena and is controlled by the orientation of the THz electric field polarization plane. Additionally, applying a small magnetic field normal to the graphene plane leads to a phase shift in the polarization dependence. Increasing the magnetic field strength, the current starts to exhibit 1/B-magnetooscillations with a period consistent with that of the Shubnikov-de-Haas effect and amplitude by an order of magnitude larger as compared to the current at zero magnetic field measured under the same conditions. The microscopic theory developed shows that the current is formed in the edges vicinity limited by the mean-free path of carriers and the screening length of the high-frequency electric field. The current originates from the alignment of the free carrier momenta and dynamic accumulation of charge at the edges, where the P-symmetry is naturally broken. The observed magnetooscillations of the photocurrent are attributed to the formation of Landau levels. △ Less

Submitted 15 June, 2020; v1 submitted 4 May, 2020; originally announced May 2020.

Giant ratchet magneto-photocurrent in graphene lateral superlattices

Authors: S. Hubmann, V. V. Bel'kov, L. E. Golub, V. Yu. Kachorovskii, M. Drienovsky, J. Eroms, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current… ▽ More We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states. △ Less

Submitted 9 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Research 2, 033186 (2020)

Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness

Authors: S. Hubmann, G. V. Budkin, M. Urban, V. V. Bel'kov, A. P. ~Dmitriev, J. Ziegler, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the… ▽ More We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency $ω$ and momentum relaxation time $τ_{\text l}$ larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light impact ionization is proportional to $\exp(-E_0^2/E^2)$, with the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. As observed in experiment, it exhibits a strong frequency dependence for $ωτ\gg 1$ characterized by the characteristic field $E_0$ linearly increasing with the radiation frequency $ω$. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

Authors: M. Otteneder, D. Sacré, I. Yahniuk, G. V. Budkin, K. Diendorfer, D. A. Kozlov, I. A. Dmitriev, N. N. Mikhailov, S. A. Dvoretsky, S. A. Tarasenko, V. V. Bel'kov, W. Knap, S. D. Ganichev

Abstract: We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case t… ▽ More We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states. △ Less

Submitted 13 January, 2020; originally announced January 2020.

Comments: 13 pages, 13 figures

Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

Authors: S. Hubmann, G. V. Budkin, M. Otteneder, D. But, D. Sacré, I. Yahniuk, K. Diendorfer, V. V. Bel'kov, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, V. S. Varavin, V. G. Remesnik, S. A. Tarasenko, W. Knap, S. D. Ganichev

Abstract: We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende… ▽ More We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Comments: 11 pages, 7 figures

MSC Class: 78-05

Journal ref: Phys. Rev. Materials 4, 043607 (2020)

Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films

Authors: S. Candussio, G. V. Budkin, M. Otteneder, D. A. Kozlov, I. A. Dmitriev, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant… ▽ More We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments. △ Less

Submitted 2 May, 2019; v1 submitted 8 February, 2019; originally announced February 2019.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. Materials 3, 054205 (2019)

Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells

Authors: M. Otteneder, I. A. Dmitriev, S. Candussio, M. L. Savchenko, D. A. Kozlov, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other… ▽ More We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other structures with QW widths ranging from 5 to 20 nm and lower mobility we observed an unconventional non-oscillatory photoconductivity signal which changes its sign upon magnetic field increase. This effect was observed in structures characterized by both normal and inverted band ordering, as well as in QWs with critical thickness and linear dispersion. In samples having Hall bar and Corbino geometries an increase of the magnetic field resulted in a single and double change of the sign of the photoresponse, respectively. We show that within the bolometric mechanism of the photoresponse these unusual features imply a non-monotonic behavior of the transport scattering rate, which should decrease (increase) with temperature for magnetic fields below (above) the certain value. This behavior is found to be consistent with the results of dark transport measurements of magnetoresistivity at different sample temperatures. Our experiments demonstrate that photoconductivity is a very sensitive probe of the temperature variations of the transport characteristics, even those that are hardly detectable using standard transport measurements. △ Less

Submitted 27 July, 2018; originally announced July 2018.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 98, 245304 (2018)

Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures

Authors: P. Faltermeier, G. V. Budkin, S. Hubmann, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. Adamus, G. Karczewski, T. Wojtowicz, D. A. Kozlov, D. Weiss, S. D. Ganichev

Abstract: We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-perio… ▽ More We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-periodic oscillations with an amplitude much larger than the photocurrent at zero magnetic field. Variation of gate voltages applied to individual grating gates of the DGG enables us to change the degree and the sign of the lateral asymmetry in a controllable way. The data reveal that the photocurrent reflects the degree of lateral asymmetry induced by different gate potentials. We show that the magnetic ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, which are sensitive to the corresponding polarization of the driving electromagnetic force. Theoretical analysis performed in the framework of semiclassical approach and taking into account Landau quantization describes the experimental results well. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Magneto-resistance oscillations induced by high-intensity terahertz radiation

Authors: T. Herrmann, Z. D. Kvon, I. A. Dmitriev, D. A. Kozlov, B. Jentzsch, M. Schneider, L. Schell, V. V. Bel'kov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, M. Oltscher, D. Weiss, S. D. Ganichev

Abstract: We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiment… ▽ More We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiments with radiation intensity ranging over five orders of magnitude from $0.1$ W/cm$^2$ to $10^4$ W/cm$^2$ reveal high-power saturation of the MIRO amplitude, which is well described by an empirical fit function $I/(1 + I/I_s)^β$ with $β\sim 1$. The saturation intensity Is is of the order of tens of W/cm$^2$ and increases by six times by increasing the radiation frequency from $0.6$ to $1.1$ THz. The results are discussed in terms of microscopic mechanisms of MIRO and compared to nonlinear effects observed earlier at significantly lower excitation frequencies. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 96, 115449 (2017)

Magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with a lateral asymmetric superlattice

Authors: P. Faltermeier, G. V. Budkin, J. Unverzagt, S. Hubmann, A. Pfaller, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. Adamus, G. Karczewski, T. Wojtowicz, V. V. Popov, D. V. Fateev, D. A. Kozlov, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurr… ▽ More We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurrent at zero magnetic field. We show that the photocurrent is caused by the combined action of a spatially periodic in-plane potential and the spatially modulated radiation due to the near field effects of light diffraction. Magnitude and direction of the photocurrent are determined by the degree of the lateral asymmetry controlled by the variation of voltages applied to the individual gates. The observed magneto-oscillations with enhanced photocurrent amplitude result from Landau quantization and, for (Cd,Mn)Te at low temperatures, from the exchange enhanced Zeeman splitting in diluted magnetic heterostructures. Theoretical analysis, considering the magnetic quantum ratchet effect in the framework of semiclassical approach, describes quite well the experimental results. △ Less

Submitted 9 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 95, 155442 (2017)

Photogalvanic probing of helical edge channels in 2D HgTe topological insulators

Authors: K. -M. Dantscher, D. A. Kozlov, M. T. Scherr, S. Gebert, J. Baerenfaenger, M. V. Durnev, S. A. Tarasenko, V. V. Bel'kov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in… ▽ More We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality point (CNP), and again rises. Conductance measured over a 7 $μ$m distance at CNP approaches 2e2/h, the value characteristic for ballistic transport in 2D TIs. The data reveal that the photocurrent is caused by photoionization of helical edge electrons to the conduction band. We discuss the microscopic model of this phenomenon and compare calculations with the experimental data. △ Less

Submitted 28 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 95, 201103 (2017)

Opto-Electronic Characterization of Three Dimensional Topological Insulators

Authors: Helene Plank, Sergey N. Danilov, Vasily V. Bel'kov, Vadim A. Shalygin, Jörn Kampmeier, Martin Lanius, Gregor Mussler, Detlev Grützmacher, Sergey D. Ganichev

Abstract: We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning w… ▽ More We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneity's in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers. △ Less

Submitted 12 July, 2016; originally announced July 2016.

Comments: 6 pages, 4 figures

Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators

Authors: H. Plank, L. E. Golub, S. Bauer, V. V. Bel'kov, T. Herrmann, P. Olbrich, M. Eschbach, L. Plucinski, J. Kampmeier, M. Lanius, G. Mussler, D. Grützmacher, S. D. Ganichev

Abstract: We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a c… ▽ More We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space. △ Less

Submitted 22 December, 2015; originally announced December 2015.

Comments: 15 pages, 12 figures

Journal ref: Phys. Rev. B 93, 125434 (2016)

Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions

Authors: C. Zoth, P. Olbrich, P. Vierling, K. -M. Dantscher, V. V. Bel'kov, M. A. Semina, M. M. Glazov, L. E. Golub, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a… ▽ More We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect. △ Less

Submitted 7 July, 2014; v1 submitted 4 July, 2014; originally announced July 2014.

Comments: 16 pages, 13 figures

Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators

Authors: P. Olbrich, L. E. Golub, T. Herrmann, S. N. Danilov, H. Plank, V. V. Bel'kov, G. Mussler, Ch. Weyrich, C. M. Schneider, J. Kampmeier, D. Grützmacher, L. Plucinski, M. Eschbach, S. D. Ganichev

Abstract: We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic… ▽ More We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk. △ Less

Submitted 28 February, 2014; originally announced February 2014.

Journal ref: Phys. Rev. Lett. 113, 096601 (2014)

Cyclotron-resonance-assisted photon drag effect in InSb/InAlSb quantum wells excited by terahertz radiation

Authors: S. Stachel, G. V. Budkin, U. Hagner, V. V. Bel'kov, M. M. Glazov, S. A. Tarasenko, S. K. Clowes, T. Ashley, A. M. Gilbertson, S. D. Ganichev

Abstract: We report on the observation of the cyclotron-resonance-assisted photon drag effect. Resonant photocurrent is detected in InSb/InAlSb quantum wells structures subjected to a static magnetic field and excited by terahertz radiation at oblique incidence. The developed theory based on Boltzmann's kinetic equation is in a good agreement with the experimental findings. We show that the resonant photocu… ▽ More We report on the observation of the cyclotron-resonance-assisted photon drag effect. Resonant photocurrent is detected in InSb/InAlSb quantum wells structures subjected to a static magnetic field and excited by terahertz radiation at oblique incidence. The developed theory based on Boltzmann's kinetic equation is in a good agreement with the experimental findings. We show that the resonant photocurrent originates from the transfer of photon momentum to free electrons drastically enhanced at cyclotron resonance. △ Less

Submitted 3 December, 2013; originally announced December 2013.

Comments: 9 pages, 8 figures

Giant spin-polarized current in a Dirac fermion system at cyclotron resonance

Authors: P. Olbrich, C. Zoth, P. Vierling, K. -M. Dantscher, G. V. Budkin, S. A. Tarasenko, V. V. Bel'kov, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Abstract: We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and swee** magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic field… ▽ More We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and swee** magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic fields by means of optical gating. The photocurent data, accompanied by measurements of radiation transmission as well as Shubnikov-de Haas and quantum Hall effects, give an evidence that the enhancement of the photocurrent is caused by cyclotron resonance in a Dirac fermion system. The developed theory shows that the current is spin polarized and originates from the spin dependent scattering of charge carriers heated by the radiation. △ Less

Submitted 19 January, 2013; originally announced January 2013.

Comments: 5 pages with 5 figures + 3 pages of supplementary material with 1 figure

Gate-controlled Persistent Spin Helix State in Materials with Strong Spin-Orbit Interaction

Authors: M. Kohda, V. Lechner, Y. Kunihashi, T. Dollinger, P. Olbrich, C. Schönhuber, I. Caspers, V. V. Bel'kov, L. E. Golub, D. Weiss, K. Richter, J. Nitta, S. D. Ganichev

Abstract: In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs… ▽ More In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta. △ Less

Submitted 25 May, 2012; originally announced May 2012.

Comments: 5 pages, 4 figures

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

Authors: P. Olbrich, C. Zoth, P. Lutz, C. Drexler, V. V. Bel'kov, Ya. V. Terent'ev, S. A. Tarasenko, A. N. Semenov, S. V. Ivanov, D. R. Yakovlev, T. Wojtowicz, U. Wurstbauer, D. Schuh, S. D. Ganichev

Abstract: We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalen… ▽ More We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field. △ Less

Submitted 27 April, 2012; originally announced April 2012.

Comments: 14 pages, 13 figures

Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures

Authors: S. Stachel, P. Olbrich, C. Zoth, U. Hagner, T. Stangl, C. Karl, P. Lutz, V. V. Bel'kov, S. K. Clowes, T. Ashley, A. M. Gilbertson, S. D. Ganichev

Abstract: We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures. We show that intraband (Drude-like) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature and wavelengt… ▽ More We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures. We show that intraband (Drude-like) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature and wavelength is studied. We show that at moderate magnetic fields the photocurrent exhibits a typical linear field dependence. At high magnetic fields, however, it becomes nonlinear and inverses its sign. The experimental results are analyzed in terms of the microscopic models based on asymmetric relaxation of carriers in the momentum space. We demonstrate that the observed nonlinearity of the photocurrent is caused by the large Zeeman spin splitting in InSb/AlInSb structures and an interplay of the spin-related and spin-independent roots of the magnetogyrotropic photogalvanic effect. △ Less

Submitted 7 December, 2011; originally announced December 2011.

Comments: 9 pages, 10 figures, two columns

Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

Authors: Ya. V. Terent'ev, C. Zoth, V. V. Bel'kov, P. Olbrich, C. Drexler, V. Lechner, P. Lutz, A. N. Semenov, V. A. Solov'ev, I. V. Sedova, G. V. Klimko, T. A. Komissarova, S. V. Ivanov, S. D. Ganichev

Abstract: A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by… ▽ More A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents. △ Less

Submitted 5 April, 2011; originally announced April 2011.

Comments: 4 pages and 3 figures

Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures

Authors: V. Lechner, L. E. Golub, F. Lomakina, V. V. Bel'kov, P. Olbrich, S. Stachel, I. Caspers, M. Griesbeck, M. Kugler, M. J. Hirmer, T. Korn, C. Schüller, D. Schuh, W. Wegscheider, S. D. Ganichev

Abstract: We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum w… ▽ More We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms. △ Less

Submitted 19 November, 2010; originally announced November 2010.

Comments: 10 pages, 10 figures

Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

Authors: C. Drexler, V. V. Bel'kov, B. Ashkinadze, P. Olbrich, C. Zoth, V. Lechner, Ya. V. Terent'ev, D. R. Yakovlev, G. Karczewski, T. Wojtowicz, D. Schuh, W. Wegscheider, S. D. Ganichev

Abstract: We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding… ▽ More We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current. △ Less

Submitted 16 September, 2010; originally announced September 2010.

Comments: 3 pages, 4 figures

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

Authors: B. Wittmann, S. N. Danilov, V. V. Bel'kov, S. A. Tarasenko, E. G. Novik, H. Buhmann, C. Brüne, L. W. Molenkamp, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev

Abstract: We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state an… ▽ More We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed. △ Less

Submitted 12 February, 2010; originally announced February 2010.

Nonlinear magneto-gyrotropic photogalvanic effect

Authors: H. Diehl, V. A. Shalygin, L. E. Golub, S. A. Tarasenko, S. N. Danilov, V. V. Bel'kov, E. G. Novik, H. Buhmann, C. Brüne, E. L. Ivchenko, S. D. Ganichev

Abstract: We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is obs… ▽ More We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the heterostructures is shown to cause a dc electric current in the presence of an in-plane magnetic field. A cubic in magnetic field component of the photocurrent is observed in quantum wells with the inverted band structure only. The experimental data are discussed in terms of both the phenomenological theory and microscopic models. △ Less

Submitted 20 May, 2009; originally announced May 2009.

Comments: 10 pages, 9 figures

Magneto-gyrotropic photogalvanic effect and spin dephasing in (110)-grown GaAs/AlGaAs quantum well structures

Authors: P. Olbrich, J. Allerdings, V. V. Bel'kov, S. A. Tarasenko, D. Schuh, W. Wegscheider, T. Korn, C. Schüller, D. Weiss, S. D. Ganichev

Abstract: We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well… ▽ More We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of the delta-do** layer positions. For the in-plane magnetic field the photocurrent is only observed in asymmetric structures but vanishes in symmetrically doped QWs. Applying time-resolved Kerr rotation and polarized luminescence we investigate the spin relaxation in QWs for various excitation levels. Our data confirm that in symmetrically doped QWs the spin relaxation time is maximal, therefore, these structures set the upper limit of spin dephasing in GaAs/AlGaAs QWs. △ Less

Submitted 21 March, 2009; originally announced March 2009.

Comments: 11 pages, 12 figures

Tuning of structure inversion asymmetry by the $δ$-do** position in (001)-grown GaAs quantum wells

Authors: V. Lechner, L. E. Golub, P. Olbrich, S. Stachel, D. Schuh, W. Wegscheider, V. V. Bel'kov, S. D. Ganichev

Abstract: Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-do** layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tunin… ▽ More Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-do** layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-do** position we grow samples with almost equal degrees of structure and bulk inversion asymmetry. △ Less

Submitted 6 March, 2009; originally announced March 2009.

Comments: 4 pages 2 figures

Spin currents in diluted magnetic semiconductors (extended version)

Authors: S. D. Ganichev, S. A. Tarasenko, V. V. Bel'kov, P. Olbrich, W. Eder, D. R. Yakovlev, V. Kolkovsky, W. Zaleszczyk, G. Karczewski, T. Wojtowicz, D. Weiss

Abstract: Spin currents resulting in the zero-bias spin separation have been observed in unbiased diluted magnetic semiconductor structures (Cd,Mn)Te/(Cd,Mg)Te. The pure spin current generated due to the electron gas heating by terahertz radiation is converted into a net electric current by application of an external magnetic field. We demonstrate that polarization of the magnetic ion system enhances dras… ▽ More Spin currents resulting in the zero-bias spin separation have been observed in unbiased diluted magnetic semiconductor structures (Cd,Mn)Te/(Cd,Mg)Te. The pure spin current generated due to the electron gas heating by terahertz radiation is converted into a net electric current by application of an external magnetic field. We demonstrate that polarization of the magnetic ion system enhances drastically the conversion due to the spin-dependent scattering by localized Mn(2+) ions and the giant Zeeman splitting. △ Less

Submitted 2 March, 2009; v1 submitted 26 November, 2008; originally announced November 2008.

Comments: 6 pages, 4 figures

Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

Authors: W. Weber, L. E. Golub, S. N. Danilov, J. Karch, C. Reitmaier, B. Wittmann, V. V. Bel'kov, E. L. Ivchenko, Z. D. Kvon, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev

Abstract: Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions. Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions. △ Less

Submitted 7 May, 2008; v1 submitted 2 April, 2008; originally announced April 2008.

Comments: technical reasons

Magneto-gyrotropic effects in semiconductor quantum wells (review)

Authors: V. V. Bel'kov, S. D. Ganichev

Abstract: Magneto-gyrotropic photogalvanic effects in quantum wells are reviewed. We discuss experimental data, results of phenomenological analysis and microscopic models of these effects. The current flow is driven by spin-dependent scattering in low-dimensional structures gyrotropic media resulted in asymmetry of photoexcitation and relaxation processes. Several applications of the effects are also con… ▽ More Magneto-gyrotropic photogalvanic effects in quantum wells are reviewed. We discuss experimental data, results of phenomenological analysis and microscopic models of these effects. The current flow is driven by spin-dependent scattering in low-dimensional structures gyrotropic media resulted in asymmetry of photoexcitation and relaxation processes. Several applications of the effects are also considered. △ Less

Submitted 6 March, 2008; originally announced March 2008.

Comments: 28 pages, 13 figures

Symmetry and spin dephasing in (110)-grown quantum wells

Authors: V. V. Bel'kov, P. Olbrich, S. A. Tarasenko, D. Schuh, W. Wegscheider, T. Korn, Ch. Schüller, D. Weiss, W. Prettl, S. D. Ganichev

Abstract: Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in… ▽ More Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-do** layer position. △ Less

Submitted 11 December, 2007; originally announced December 2007.

Comments: 4 pages, 4 figures

Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems

Authors: W. Weber, S. Seidl, S. N. Danilov, W. Prettl, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. D. Kvon, Hyun-Ick Cho, Jung-Hee Lee, S. D. Ganichev

Abstract: The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurren… ▽ More The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurrents based on spin-related phenomena are discussed. Properties of the magneto-gyrotropic and spin-galvanic effects specific for hexagonal heterostructures are analyzed. △ Less

Submitted 27 September, 2007; originally announced September 2007.

Comments: Accepted for publication in Solid State Communications

Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells

Authors: H. Diehl, V. A. Shalygin, S. N. Danilov, S. A. Tarasenko, V. V. Bel'kov, D. Schuh, W. Wegscheider, W. Prettl, S. D. Ganichev

Abstract: We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in… ▽ More We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in the plane of the quantum well. The experimental results are analyzed in terms of the phenomenological theory and microscopic models of MPGE based on either asymmetric optical excitation or asymmetric relaxation of carriers in k-space. We observed resonant photocurrents not only at oblique incidence of radiation but also at normal incidence demonstrating that conventionally applied selection rules for the inter-subband optical transitions are not rigorous. △ Less

Submitted 1 August, 2007; originally announced August 2007.

Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures

Authors: S. D. Ganichev, S. N. Danilov, V. V. Bel'kov, S. Giglberger, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, W. Jantsch, F. Schaeffler, D. Gruber, W. Prettl

Abstract: We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the… ▽ More We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data. △ Less

Submitted 26 October, 2006; originally announced October 2006.

Comments: 6 pages, 4 figures

Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents

Authors: S. Giglberger, L. E. Golub, V. V. Bel'kov, S. N. Danilov, D. Schuh, Ch. Gerl, F. Rohlfing, J. Stahl, W. Wegscheider, D. Weiss, W. Prettl, S. D. Ganichev

Abstract: The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-do** plane from one side of the quantum well to the other results in a change of sign of the photocurrent… ▽ More The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-do** plane from one side of the quantum well to the other results in a change of sign of the photocurrent caused by Rashba spin-splitting while the sign of the Dresselhaus term induced photocurrent remains. The measurements give the necessary feedback for technologists looking for structures with equal Rashba and Dresselhaus spin-splittings or perfectly symmetric structures with zero Rashba constant. △ Less

Submitted 2 October, 2006; v1 submitted 22 September, 2006; originally announced September 2006.

Comments: 9 pages, 6 figures

Zero-bias spin separation

Authors: Sergey D. Ganichev, Vasily V. Bel'kov, Sergey A. Tarasenko, Sergey N. Danilov, Stephan Giglberger, Christoph Hoffmann, Eougenious L. Ivchenko, Dieter Weiss, Werner Wegscheider, Christian Gerl, Dieter Schuh, Joachim Stahl, Joan De Boeck, Gustaaf Borghs, Wilhelm Prettl

Abstract: Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric… ▽ More Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current, or the reverse process, in which an electrical current generates a nonequilibrium spin polarization, are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. The spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by Rashba or Dresselhaus spin splitting of the band structure (intrinsic spin Hall effect). Here we provide evidence for an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect. In contrast to the spin Hall effect it does not require an electric current to flow: It is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. We show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium up to room temperature. Moreover the experimental results give evidence that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of nonequilibrium carriers. △ Less

Submitted 24 May, 2006; v1 submitted 23 May, 2006; originally announced May 2006.

Comments: 19 pages, 4 figures, 1 table

Demonstration of Rashba spin splitting in GaN-based heterostructures

Authors: W. Weber, S. D. Ganichev, Z. D. Kvon, V. V. Bel'kov, L. E. Golub, S. N. Danilov, D. Weiss, W. Prettl, Hyun-Ick Cho, Jung-Hee Lee

Abstract: The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitti… ▽ More The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface. △ Less

Submitted 8 September, 2005; originally announced September 2005.

Comments: 7 pages, 3 figures

Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells

Authors: V. V. Bel'kov, S. D. Ganichev, E. L. Ivchenko, S. A. Tarasenko, W. Weber, S. Giglberger, M. Olteanu, H. -P. Tranitz, S. N. Danilov, Petra Schneider, W. Wegscheider, D. Weiss, W. Prettl

Abstract: We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects… ▽ More We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin-dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are proposed. In most of the investigated structures the observed magneto-induced photocurrents are caused by spin-dependent relaxation of non-equilibrium carriers. △ Less

Submitted 8 February, 2005; originally announced February 2005.

Can an electric current orient spins in quantum wells?

Authors: S. D. Ganichev, S. N. Danilov, Petra Schneider, V. V. Bel'kov, L. E. Golub, W. Wegscheider, D. Weiss, W. Prettl

Abstract: A longstanding theoretical prediction is the orientation of spins by an electrical current flowing through low-dimensional carrier systems of sufficiently low crystallographic symmetry. Here we show by means of terahertz transmission experiments through two-dimensional hole systems a growing spin orientation with an increasing current at room temperature. A longstanding theoretical prediction is the orientation of spins by an electrical current flowing through low-dimensional carrier systems of sufficiently low crystallographic symmetry. Here we show by means of terahertz transmission experiments through two-dimensional hole systems a growing spin orientation with an increasing current at room temperature. △ Less

Submitted 25 March, 2004; originally announced March 2004.

Comments: 5 pages, 2 figures

Spin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption

Authors: Petra Schneider, J. Kainz, S. D. Ganichev, V. V. Bel'kov, S. N. Danilov, M. M. Glazov, L. E. Golub, U. Roessler, W. Wegscheider, D. Weiss, D. Schuh, W. Prettl

Abstract: We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths… ▽ More We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths and in a wide temperature range with the result that the saturation intensity substantially decreases with narrowing of the QWs. Spin relaxation times are derived from the measured saturation intensities by making use of calculated (linear) absorption coefficients for direct inter-subband transitions. It is shown that spin relaxation is due to the D'yakonov-Perel' mechanism governed by hole-hole scattering. The problem of selection rules is addressed. △ Less

Submitted 24 February, 2004; originally announced February 2004.

Comments: 14 pages, 5 figures

Magneto-Gyrotropic Photogalvanic Effect in Semiconductor Quantum Wells

Authors: V. V. Bel'kov, S. D. Ganichev, Petra Schneider, S. Giglberger, E. L. Ivchenko, S. A. Tarasenko, W. Wegscheider, D. Weiss, W. Prettl

Abstract: We investigate both experimentally and theoretically, the magneto-gyrotropic photogalvanic effect in zinc-blende based quantum wells with $C_{2v}$ point-group symmetry using optical excitation in the terahertz frequency range. The investigated frequencies cause intra-subband but no inter-band and inter-subband transitions. While at normal incidence the photocurrent vanishes at zero magnetic fiel… ▽ More We investigate both experimentally and theoretically, the magneto-gyrotropic photogalvanic effect in zinc-blende based quantum wells with $C_{2v}$ point-group symmetry using optical excitation in the terahertz frequency range. The investigated frequencies cause intra-subband but no inter-band and inter-subband transitions. While at normal incidence the photocurrent vanishes at zero magnetic field, it is shown that an in-plane magnetic field generates photocurrents both for polarized and unpolarized excitation. In general the spin-galvanic effect, caused by circularly polarized light, and the magneto-gyrotropic effect, caused by unpolarized excitation, is superimposed. It is shown that in the case of two specific geometries both effects are separable. △ Less

Submitted 20 November, 2003; originally announced November 2003.

Comments: 15 pages, 4 figures

Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

Authors: V. V. Bel'kov, S. D. Ganichev, Petra Schneider, C. Back, M. Oestereich, J. Rudolph, D. Haegele, L. E. Golub, W. Wegscheider, W. Prettl

Abstract: We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands. We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands. △ Less

Submitted 21 August, 2003; originally announced August 2003.

Comments: 3 pages, 3 figures

Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells

Authors: S. D. Ganichev, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Petra Schneider, S. Giglberger, J. Eroms, J. DeBoeck, G. Borghs, W. Wegscheider, D. Weiss, W. Prettl

Abstract: The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a Q… ▽ More The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a QW. The ratio of the relevant Rashba and Dresselhaus coefficients can be deduced directly from experiment and does not relay on theoretically obtained quantities. Thus our experiments open a new way to determine the different contributions to spin-orbit coupling. △ Less

Submitted 20 June, 2003; originally announced June 2003.

Spin-galvanic effect due to optical spin orientation

Authors: S. D. Ganichev, Petra Schneider, V. V. Bel'kov, E. L. Ivchenko, S. A. Tarasenko, W. Wegscheider, D. Weiss, D. Schuh, B. N. Murdin, P. J. Phillips, C. R. Pidgeon, D. G. Clarke, M. Merrick, P. Murzyn, E. V. Beregulin, W. Prettl

Abstract: Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect has been unambiguously observed in (001)-grown $n$-type GaAs quantum well (QW) structures in the absence of any external magnetic field. Resonant inter-subband transitions have been obtained making use of the tunability of the free-electron laser FELIX. It is shown that a helicity dependent photocurrent a… ▽ More Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect has been unambiguously observed in (001)-grown $n$-type GaAs quantum well (QW) structures in the absence of any external magnetic field. Resonant inter-subband transitions have been obtained making use of the tunability of the free-electron laser FELIX. It is shown that a helicity dependent photocurrent along one of the $<110>$ axes is predominantly contributed by the spin-galvanic effect while that along the perpendicular in-plane axis is mainly due to the circular photogalvanic effect. This strong non-equivalence of the [110] and [1$\bar{1}$0] directions is determined by the interplay between bulk and structural inversion asymmetries. A microscopic theory of the spin-galvanic effect for direct inter-subband optical transitions has been developed being in good agreement with experimental findings. △ Less

Submitted 6 June, 2003; v1 submitted 11 March, 2003; originally announced March 2003.