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First Direct Measurement of an Astrophysical p-Process Reaction Cross Section Using a Radioactive Ion Beam
Authors:
G. Lotay,
S. A. Gillespie,
M. Williams,
T. Rauscher,
M. Alcorta,
M. Amthor,
C. A. Andreoiu,
D. Baal,
G. C. Ball,
S. S. Bhattacharjee,
H. Behnamian,
V. Bildstein,
C. Burbadge,
W. N. Catford,
D. T. Doherty,
N. E. Esker,
F. H. Garcia,
A. B. Garnsworthy,
G. Hackman,
S. Hallam,
K. A. Hudson,
S. Jazrawi,
E. Kasanda,
A. R. L. Kennington,
Y. H. Kim
, et al. (13 additional authors not shown)
Abstract:
We have performed the first direct measurement of the 83Rb(p,g) radiative capture reaction cross section in inverse kinematics using a radioactive beam of 83Rb at incident energies of 2.4 and 2.7 A MeV. The measured cross section at an effective relative kinetic energy of Ecm = 2.393 MeV, which lies within the relevant energy window for core collapse supernovae, is smaller than the prediction of s…
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We have performed the first direct measurement of the 83Rb(p,g) radiative capture reaction cross section in inverse kinematics using a radioactive beam of 83Rb at incident energies of 2.4 and 2.7 A MeV. The measured cross section at an effective relative kinetic energy of Ecm = 2.393 MeV, which lies within the relevant energy window for core collapse supernovae, is smaller than the prediction of statistical model calculations. This leads to the abundance of 84Sr produced in the astrophysical p process being higher than previously calculated. Moreover, the discrepancy of the present data with theoretical predictions indicates that further experimental investigation of p-process reactions involving unstable projectiles is clearly warranted.
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Submitted 14 September, 2021;
originally announced September 2021.
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Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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Observation of the rare $B^0_s\toμ^+μ^-$ decay from the combined analysis of CMS and LHCb data
Authors:
The CMS,
LHCb Collaborations,
:,
V. Khachatryan,
A. M. Sirunyan,
A. Tumasyan,
W. Adam,
T. Bergauer,
M. Dragicevic,
J. Erö,
M. Friedl,
R. Frühwirth,
V. M. Ghete,
C. Hartl,
N. Hörmann,
J. Hrubec,
M. Jeitler,
W. Kiesenhofer,
V. Knünz,
M. Krammer,
I. Krätschmer,
D. Liko,
I. Mikulec,
D. Rabady,
B. Rahbaran
, et al. (2807 additional authors not shown)
Abstract:
A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six sta…
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A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six standard deviations, and the best measurement of its branching fraction so far. Furthermore, evidence for the $B^0\toμ^+μ^-$ decay is obtained with a statistical significance of three standard deviations. The branching fraction measurements are statistically compatible with SM predictions and impose stringent constraints on several theories beyond the SM.
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Submitted 17 August, 2015; v1 submitted 17 November, 2014;
originally announced November 2014.
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Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India
Authors:
T. Aziz,
S. R. Chendvankar,
G. B. Mohanty,
M. R. Patil,
K. K. Rao,
Y. R. Rani,
Y. P. P. Rao,
H. Behnamian,
S. Mersi,
M. Naseri
Abstract:
This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we have fine-tuned various process parameters i…
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This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we have fine-tuned various process parameters in order to produce sensors with the desired specifications.
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Submitted 8 May, 2014; v1 submitted 11 February, 2014;
originally announced February 2014.
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Remarks on generalized scalar-tensor models of dark energy
Authors:
M. Alimohammadi,
H. Behnamian
Abstract:
The generalized scalar-tensor models with Lagrangian $F(φ,R)-U(φ)(\nablaφ)^2$ are considered. It is shown that the phantom-divide-line crossing and the deceleration to acceleration transition generally occurr in these models. Two specific examples, the coupled quintessence model and the Brans-Dicke model are considered. For the first example, it is shown that for the models with $ξ>3/16$, the…
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The generalized scalar-tensor models with Lagrangian $F(φ,R)-U(φ)(\nablaφ)^2$ are considered. It is shown that the phantom-divide-line crossing and the deceleration to acceleration transition generally occurr in these models. Two specific examples, the coupled quintessence model and the Brans-Dicke model are considered. For the first example, it is shown that for the models with $ξ>3/16$, the $ω=-1$ transition exists. This is verified numerically for some special cases. For the Brans-Dicke model, it is shown that the transition does not occur, a result which can be verified by using the exact solution of this model. Finally the contribution of quantum effects on these phenomena is investigated. It is shown that for some special cases where the $ω=-1$ transition is classically forbidden, the quantum effects can induce transition. The $ξ=1/6$ of coupled quintessence model is an example of this. The quantum effects are described via the account of conformal anomaly.
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Submitted 27 September, 2009; v1 submitted 15 September, 2009;
originally announced September 2009.
