Showing 1–14 of 14 results for author: Behin-Aein, B

Benchmarking a Probabilistic Coprocessor

Authors: Jan Kaiser, Risi Jaiswal, Behtash Behin-Aein, Supriyo Datta

Abstract: Computation in the past decades has been driven by deterministic computers based on classical deterministic bits. Recently, alternative computing paradigms and domain-based computing like quantum computing and probabilistic computing have gained traction. While quantum computers based on q-bits utilize quantum effects to advance computation, probabilistic computers based on probabilistic (p-)bits… ▽ More Computation in the past decades has been driven by deterministic computers based on classical deterministic bits. Recently, alternative computing paradigms and domain-based computing like quantum computing and probabilistic computing have gained traction. While quantum computers based on q-bits utilize quantum effects to advance computation, probabilistic computers based on probabilistic (p-)bits are naturally suited to solve problems that require large amount of random numbers utilized in Monte Carlo and Markov Chain Monte Carlo algorithms. These Monte Carlo techniques are used to solve important problems in the fields of optimization, numerical integration or sampling from probability distributions. However, to efficiently implement Monte Carlo algorithms the generation of random numbers is crucial. In this paper, we present and benchmark a probabilistic coprocessor based on p-bits that are naturally suited to solve these problems. We present multiple examples and project that a nanomagnetic implementation of our probabilistic coprocessor can outperform classical CPU and GPU implementations by multiple orders of magnitude. △ Less

Submitted 29 September, 2021; originally announced September 2021.

Intrinsic optimization using stochastic nanomagnets

Authors: Brian Sutton, Kerem Yunus Camsari, Behtash Behin-Aein, Supriyo Datta

Abstract: This paper draws attention to a hardware system which can be engineered so that its intrinsic physics is described by the generalized Ising model and can encode the solution to many important NP-hard problems as its ground state. The basic constituents are stochastic nanomagnets which switch randomly between the $\pm 1$ Ising states and can be monitored continuously with standard electronics. Thei… ▽ More This paper draws attention to a hardware system which can be engineered so that its intrinsic physics is described by the generalized Ising model and can encode the solution to many important NP-hard problems as its ground state. The basic constituents are stochastic nanomagnets which switch randomly between the $\pm 1$ Ising states and can be monitored continuously with standard electronics. Their mutual interactions can be short or long range, and their strengths can be reconfigured as needed to solve specific problems and to anneal the system at room temperature. The natural laws of statistical mechanics guide the network of stochastic nanomagnets at GHz speeds through the collective states with an emphasis on the low energy states that represent optimal solutions. As proof-of-concept, we present simulation results for standard NP-complete examples including a 16-city traveling salesman problem using experimentally benchmarked models for spin-transfer torque driven stochastic nanomagnets. △ Less

Submitted 25 March, 2017; v1 submitted 1 August, 2016; originally announced August 2016.

Comments: 12 pages, 3 figures

Journal ref: Sci. Rep. 7, 44370 (2017)

Numerical Fokker-Planck study of stochastic write error slope in spin torque switching

Authors: Yunkun Xie, Behtash Behin-Aein, Avik W. Ghosh

Abstract: This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is… ▽ More This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is discussed in detail to enable better device engineering and optimization. Finally a 2D FPE tool is demonstrated that extends the applicability of FPE to write error in non PMA systems with built-in asymmetry. △ Less

Submitted 25 July, 2016; originally announced July 2016.

Comments: 7 pages, 8 figures

Journal ref: IEEE Transactions on Electron Devices 64.1 (2017): 319-324

A building block for hardware belief networks

Authors: Behtash Behin-Aein, Vinh Diep, Supriyo Datta

Abstract: Belief networks represent a powerful approach to problems involving probabilistic inference, but much of the work in this area is software based utilizing standard deterministic hardware based on the transistor which provides the gain and directionality needed to interconnect billions of them into useful networks. This paper proposes a transistor like device that could provide an analogous buildin… ▽ More Belief networks represent a powerful approach to problems involving probabilistic inference, but much of the work in this area is software based utilizing standard deterministic hardware based on the transistor which provides the gain and directionality needed to interconnect billions of them into useful networks. This paper proposes a transistor like device that could provide an analogous building block for probabilistic networks. We present two proof-of-concept examples of belief networks, one reciprocal and one non-reciprocal, implemented using the proposed device which is simulated using experimentally benchmarked models. △ Less

Submitted 1 June, 2016; originally announced June 2016.

Comments: Keywords: stochastic, sigmoid, phase transition, spin glass, frustration, reduced frustration, Ising model, Bayesian network, Boltzmann machine. 23 pages, 9 figures

Journal ref: Scientific Reports 6, Article Number: 29893 (2016)

Computing with spins and magnets

Authors: Behtash Behin-Aein, Jian-** Wang, Roland Wiesendanger

Abstract: The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and ma… ▽ More The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods. △ Less

Submitted 25 November, 2014; originally announced November 2014.

Comments: 18 pages, 5 figures. Key Words: Magnetic Memory, Gain, Directionality, Non-Volatile Spin Logic, Reconfigurable Logic, Logic-in-Memory, Memory-in-Logic, Spintronics, Magnetic Tunnel Junction, Spin Transfer Torque, Magneto-Resistance, Perpendicular Magnetic Anisotropy, Hysteresis, Spin-Polarized Scanning Tunneling Microscopy, RKKY Interaction, MRS Bulletin, Volume 39, August 2014

Spin switches for compact implementation of neuron and synapse

Authors: Vinh Quang Diep, Brian Sutton, Behtash Behin-Aein, Supriyo Datta

Abstract: Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network (HNN) implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device ba… ▽ More Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network (HNN) implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert (LLG) equations, one for each magnet in the network. △ Less

Submitted 26 September, 2016; v1 submitted 9 April, 2014; originally announced April 2014.

Comments: 7 pages, 9 figures and 1 table

Journal ref: Applied Physic Letters, 104, 222405 (2014)

What constitutes a nanoswitch? A Perspective

Authors: Supriyo Datta, Vinh Quang Diep, Behtash Behin-Aein

Abstract: Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W) information onto magnets. Many other new phenomena are being investigated for nano-electronic memory as described in Part II of this book. It seems natural to ask… ▽ More Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W) information onto magnets. Many other new phenomena are being investigated for nano-electronic memory as described in Part II of this book. It seems natural to ask whether these advances in memory devices could also translate into a new class of logic devices. What makes logic devices different from memory is the need for one device to drive another and this calls for gain, directionality and input-output isolation as exemplified by the transistor. With this in mind we will try to present our perspective on how W and R devices in general, spintronic or otherwise, could be integrated into transistor-like switches that can be interconnected to build complex circuits without external amplifiers or clocks. We will argue that the most common switch used to implement digital logic based on complementary metal oxide semiconductor (CMOS) transistors can be viewed as an integrated W-R unit having an input-output asymmetry that give it gain and directionality. Such a viewpoint is not intended to provide any insight into the operation of CMOS switches, but rather as an aid to understanding how W and R units based on spins and magnets can be combined to build transistor-like switches. Next we will discuss the standard W and R units used for magnetic memory devices and present one way to integrate them into a single unit with the input electrically isolated from the output. But we argue that this integrated W-R unit would not provide the key property of gain. We will then show that the recently discovered giant spin Hall effect could be used to construct a W-R unit with gain and suggest other possibilities for spin switches with gain. △ Less

Submitted 8 April, 2014; originally announced April 2014.

Comments: 27 pages. To appear in Emerging Nanoelectronic Devices, Editors: An Chen, James Hutchby, Victor Zhirnov and George Bourianoff, John Wiley & Sons (to be published)

Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices

Authors: Angik Sarkar, Dmitri E. Nikonov, Ian A. Young, Behtash Behin-Aein, Supriyo Datta

Abstract: Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy a… ▽ More Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy and time. Application of this approach to a wide class of charge-based and non-charge based devices is discussed. The approach suggests pathways for improving the performance of beyond-CMOS devices and a new realistic limit for energy-delay product in terms of the Planks constant. △ Less

Submitted 21 August, 2013; originally announced August 2013.

Comments: 7 pages 2 figures. Submitted to IEEE Transactions on Nanotechnology

Modeling Multi-Magnet Networks Interacting Via Spin Currents

Authors: Srikant Srinivasan, Vinh Diep, Behtash Behin-Aein, Angik Sarkar, Supriyo Datta

Abstract: The significant experimental advances of the last few decades in dealing with the interaction of spin currents and nanomagnets, at the device level, has allowed envisioning a broad class of devices that propose to implement information processing using spin currents and nanomagnets. To analyze such spin-magnet logic circuits, in general, we have developed a coupled spin-transport/ magnetization-dy… ▽ More The significant experimental advances of the last few decades in dealing with the interaction of spin currents and nanomagnets, at the device level, has allowed envisioning a broad class of devices that propose to implement information processing using spin currents and nanomagnets. To analyze such spin-magnet logic circuits, in general, we have developed a coupled spin-transport/ magnetization-dynamics simulation framework that could be broadly applicable to various classes of spin-valve/ spin-torque devices. Indeed, the primary purpose of this chapter is to describe in detail, the overall approach we have developed to include a description of spin transport coupled with magnetization dynamics and to show how it was benchmarked against available data on experiments. We address non-collinear spin-transport in Section-2 using a lumped "4-component spin-circuit formalism" that describes the interaction of non-collinear magnets (required for modeling spin torque), by computing 4-component currents and voltages at every node of a "circuit". For modeling the magnetization dynamics, we use the standard Landau-Lifshitz-Gilbert (LLG) equation with the Slonczewski and the field-like terms included for spin torque. Section-3 describes how this LLG model is coupled with the spin transport model to analyze spin-torque experiments and spin-magnet circuits in general. We include MATLAB codes in the Appendix to facilitate a "hands-on" understanding of our model and hope it will enable interested readers to conveniently analyze their own experiments, develop a deeper insight into spin-magnet circuits or come up with their own creative designs. △ Less

Submitted 27 May, 2014; v1 submitted 2 April, 2013; originally announced April 2013.

Comments: To appear in Handbook of Spintronics, eds. D Awschalom, J Nitta & Y Xu, Springer (2013). 52 pages and 20 figures. Comments and suggestions are welcome. Code typos corrected in (v3)

Non-volatile Spin Switch for Boolean and Non-Boolean Logic

Authors: Supriyo Datta, Sayeef Salahuddin, Behtash Behin-Aein

Abstract: We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation, gain and fan-out similar to CMOS inverters, but with the information stored in nanomagnets making it non-volatile. Such spin switches could be interconnected, wi… ▽ More We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation, gain and fan-out similar to CMOS inverters, but with the information stored in nanomagnets making it non-volatile. Such spin switches could be interconnected, with no external amplification, just with passive circuit elements, to perform logic operations. Moreover, since the digitization and storage occurs naturally in the magnets, the voltages can be used to implement analog weighting for non-Boolean logic. △ Less

Submitted 6 January, 2013; originally announced January 2013.

Comments: 10 pages. 5 figures in the main article. 4 figures in the appendix. Also available at http://apl.aip.org/resource/1/applab/v101/i25/p252411_s1?bypassSSO=1

Journal ref: Appl. Phys. Lett. 101, 252411 (2012)

All Spin Logic device with inbuilt Non-Reciprocity

Authors: Srikant Srinivasan, Angik Sarkar, Behtash Behin-Aein, Supriyo Datta

Abstract: The need for low power alternatives to digital electronic circuits has led to increasing interest in logic devices where information is stored in nanomagnets. This includes both nanomagnetic logic (NML) where information is communicated through magnetic fields of nanomagnets and all-spin logic (ASL) where information is communicated through spin currents. A key feature needed for logic implementat… ▽ More The need for low power alternatives to digital electronic circuits has led to increasing interest in logic devices where information is stored in nanomagnets. This includes both nanomagnetic logic (NML) where information is communicated through magnetic fields of nanomagnets and all-spin logic (ASL) where information is communicated through spin currents. A key feature needed for logic implementation is non-reciprocity, whereby the output is switched according to the input but not the other way around, thus providing directed information transfer. The objective of this paper is to draw attention to possible ASL-based schemes that utilize the physics of spin-torque to build in non-reciprocity similar to transistors that could allow logic implementation without the need for special clocking schemes. We use an experimentally benchmarked coupled spin-transport/ magnetization-dynamics model to show that a suitably engineered single ASL unit indeed switches in a non-reciprocal manner. We then present heuristic arguments explaining the origin of this directed information transfer. Finally we present simulations showing that individual ASL devices with inbuilt directionality can be cascaded to construct circuits. △ Less

Submitted 14 June, 2011; originally announced June 2011.

Comments: 7 pages, 8 figures, To appear in IEEE Trans. Magn

Switching energy-delay of all-spin logic devices

Authors: Behtash Behin-Aein, Angik Sarkar, Srikant Srinivasan, Supriyo Datta

Abstract: The need to find low power alternatives to digital electronic circuits has led to increasing interest in alternative switching schemes like the magnetic quantum cellular automata(MQCA) that store information in nanomagnets which communicate through their magnetic fields. A recent proposal called all spin logic (ASL) proposes to communicate between nanomagnets using spin currents which are spatiall… ▽ More The need to find low power alternatives to digital electronic circuits has led to increasing interest in alternative switching schemes like the magnetic quantum cellular automata(MQCA) that store information in nanomagnets which communicate through their magnetic fields. A recent proposal called all spin logic (ASL) proposes to communicate between nanomagnets using spin currents which are spatially localized and can be conveniently routed. The objective of this paper is to present a model for ASL devices that is based on established physics and is benchmarked against available experimental data and to use it to investigate switching energy-delay of ASL devices. △ Less

Submitted 3 December, 2010; originally announced December 2010.

Comments: 6 pages, 4 figures. The order of authors is alphabetical, authors contributed equally

Journal ref: Appl. Phys. Lett. 98, 123510 (2011)

Voltage Asymmetry of Spin-Transfer Torques

Authors: Deepanjan Datta, Behtash Behin-Aein, Sayeef Salahuddin, Supriyo Datta

Abstract: We present a Non-Equilibrium Green's Function based model for spin torque transfer (STT) devices which provides quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque and (4) out-of-plane torque over a range of bias voltages, using a single set of three adjustable parameters. We believe this is the first theoretical model… ▽ More We present a Non-Equilibrium Green's Function based model for spin torque transfer (STT) devices which provides quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque and (4) out-of-plane torque over a range of bias voltages, using a single set of three adjustable parameters. We believe this is the first theoretical model that is able to cover this diverse range of experiments and a key aspect of our model is the inclusion of multiple transverse modes. We also provide a simple explanation for the asymmetric bias dependence of the in-plane torque, based on the polarization of the two contacts in energy range of transport. △ Less

Submitted 13 October, 2009; originally announced October 2009.

Switching Energy of Ferromagnetic Logic Bits

Authors: Behtash Behin-Aein, Sayeef Salahuddin, Supriyo Datta

Abstract: Power dissipation in switching devices is believed to be the single most important roadblock to the continued down scaling of electronic circuits. There is a lot of experimental effort at this time to implement switching circuits based on magnets and it is important to establish power requirements for such circuits and their dependence on various parameters. This paper analyzes switching energy… ▽ More Power dissipation in switching devices is believed to be the single most important roadblock to the continued down scaling of electronic circuits. There is a lot of experimental effort at this time to implement switching circuits based on magnets and it is important to establish power requirements for such circuits and their dependence on various parameters. This paper analyzes switching energy which is dissipated in the switching process of single domain Ferromagnets used as cascadable logic bits. We obtain generic results that can be used for comparison with alternative technologies or guide the design of magnet based switching circuits. Two central results are established. One is that the switching energy drops significantly if the ramp time of an external pulse exceeds a critical time. This drop occurs more rapidly than what is normally expected of adiabatic switching for a capacitor. The other result is that under the switching scheme that allows for logic operations, the switching energy can be described by a single equation in both fast and slow limits. Furthermore, these generic results are used to quantitatively examine the possible operation frequencies and integration densities of these logic bits which show that nanomagnets can have scaling laws similar to CMOS technology. △ Less

Submitted 24 July, 2009; v1 submitted 8 April, 2008; originally announced April 2008.

Comments: 14 pages, 9 figures. Organization of the paper has been revised. Journal reference and DOI have been added

Journal ref: IEEE Transactions on Nanotechnology, Vol. 8, Issue 4, pp.505-514 (2009)