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Entropy Computing: A Paradigm for Optimization in an Open Quantum System
Authors:
Lac Nguyen,
Mohammad-Ali Miri,
R. Joseph Rupert,
Wesley Dyk,
Sam Wu,
Nick Vrahoretis,
Irwin Huang,
Milan Begliarbekov,
Nicholas Chancellor,
Uchenna Chukwu,
Pranav Mahamuni,
Cesar Martinez-Delgado,
David Haycraft,
Carrie Spear,
Mark Campanelli,
Russell Huffman,
Yong Meng Sua,
Yu** Huang
Abstract:
Modern quantum technologies using matter are designed as closed quantum systems to isolate them from interactions with the environment. This design paradigm greatly constrains the scalability and limits practical implementation of such systems. Here, we introduce a novel computing paradigm, entropy computing, that works by conditioning a quantum reservoir thereby enabling the stabilization of a gr…
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Modern quantum technologies using matter are designed as closed quantum systems to isolate them from interactions with the environment. This design paradigm greatly constrains the scalability and limits practical implementation of such systems. Here, we introduce a novel computing paradigm, entropy computing, that works by conditioning a quantum reservoir thereby enabling the stabilization of a ground state. In this work, we experimentally demonstrate the feasibility of entropy computing by building a hybrid photonic-electronic computer that uses measurement-based feedback to solve non-convex optimization problems. The system functions by using temporal photonic modes to create qudits in order to encode probability amplitudes in the time-frequency degree of freedom of a photon. This scheme, when coupled with electronic interconnects, allows us to encode an arbitrary Hamiltonian into the system and solve non-convex continuous variables and combinatorial optimization problems. We show that the proposed entropy computing paradigm can act as a scalable and versatile platform for tackling a large range of NP-hard optimization problems.
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Submitted 5 July, 2024;
originally announced July 2024.
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Stable topological insulators achieved using high energy electron beams
Authors:
Lukas Zhao,
Marcin Konczykowski,
Haiming Deng,
Inna Korzhovska,
Milan Begliarbekov,
Zhiyi Chen,
Evangelos Papalazarou,
Marino Marsi,
Luca Perfetti,
Andrzej Hruban,
Agnieszka Wołoś,
Lia Krusin-Elbaum
Abstract:
Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Ferm…
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Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size.
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Submitted 23 May, 2016;
originally announced May 2016.
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Emergent surface superconductivity of nanosized Dirac puddles in a topological insulator
Authors:
Lukas Zhao,
Haiming Deng,
Inna Korzhovska,
Jeff Secor,
Milan Begliarbekov,
Zhiyi Chen,
Erick Andrade,
Ethan Rosenthal,
Abhay Pasupathy,
Vadim Oganesyan,
Lia Krusin-Elbaum
Abstract:
Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter1-5 where exotic electronic phases of Dirac particles should arise1,6-8. Here we report a discovery of surface superconductivity in a topological material (Sb2Te3) with resistive transition at a temperature of ~9 K induced through a minor tuning of growth chemistry that…
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Surfaces of three-dimensional topological insulators have emerged as one of the most remarkable states of condensed quantum matter1-5 where exotic electronic phases of Dirac particles should arise1,6-8. Here we report a discovery of surface superconductivity in a topological material (Sb2Te3) with resistive transition at a temperature of ~9 K induced through a minor tuning of growth chemistry that depletes bulk conduction channels. The depletion shifts Fermi energy towards the Dirac point as witnessed by about two orders of magnitude reduction of carrier density and by very large (~25,000 cm^2/Vs) carrier mobility. Direct evidence from scanning tunneling spectroscopy and from magnetic response show that the superconducting condensate forms in surface puddles at unprecedentedly higher temperatures, near 60 K and above. The new superconducting state we observe to emerge in puddles can be tuned by the topological material's parameters such as Fermi velocity and mean free path through band engineering; it could potentially become a hunting ground for Majorana modes6 and lead to a disruptive paradigm change9 in how quantum information is processed.
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Submitted 5 August, 2014;
originally announced August 2014.
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Quantum Transport in Graphene Nanoribbons with Realistic Edges
Authors:
Patrick Hawkins,
Milan Begliarbekov,
Marko Zivkovic,
Stefan Strauf,
Christopher P. Search
Abstract:
Due to their unique electrical properties, graphene nanoribbons (GNRs) show great promise as the building blocks of novel electronic devices. However, these properties are strongly dependent on the geometry of the edges of the graphene devices. Thus far only zigzag and armchair edges have been extensively studied. However, several other self passivating edge reconstructions are possible, and were…
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Due to their unique electrical properties, graphene nanoribbons (GNRs) show great promise as the building blocks of novel electronic devices. However, these properties are strongly dependent on the geometry of the edges of the graphene devices. Thus far only zigzag and armchair edges have been extensively studied. However, several other self passivating edge reconstructions are possible, and were experimentally observed. Here we utilize the Nonequilibrium Green's Function (NEGF) technique in conjunction with tight binding methods to model quantum transport through armchair, zigzag, and several other self-passivated edge reconstructions. In addition we consider the experimentally relevant cases of mixed edges, where random combinations of possible terminations exist on a given GNR boundary. We find that transport through GNR's with self-passivating edge reconstructions is governed by the sublattice structure of the edges, in a manner similar to their parent zigzag or armchair configurations. Furthermore, we find that the reconstructed armchair GNR's have a larger band gap energy than pristine armchair edges and are more robust against edge disorder. These results offer novel insights into the transport in GNRs with realistic edges and are thus of paramount importance in the development of GNR based devices.
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Submitted 16 August, 2012;
originally announced August 2012.
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Localized States and Resultant Band Bending in Graphene Antidot Superlattices
Authors:
Milan Begliarbekov,
Onejae Sul,
John J. Santanello,
Nan Ai,
Xi Zhang,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a bui…
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We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type do**. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.
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Submitted 24 February, 2011;
originally announced February 2011.
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Quantum Inductance and High Frequency Oscillators in Graphene Nanoribbons
Authors:
Milan Begliarbekov,
Stefan Strauf,
Christopher P Search
Abstract:
Here we investigate high frequency AC transport through narrow graphene nanoribbons with topgate potentials that form a localized quantum dot. We show that as a consequence of the finite dwell time of an electron inside the quantum dot (QD), the QD behaves like a classical inductor at sufficiently high frequencies ω\gtrsim50 GHz. When the geometric capacitance of the topgate and the quantum capaci…
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Here we investigate high frequency AC transport through narrow graphene nanoribbons with topgate potentials that form a localized quantum dot. We show that as a consequence of the finite dwell time of an electron inside the quantum dot (QD), the QD behaves like a classical inductor at sufficiently high frequencies ω\gtrsim50 GHz. When the geometric capacitance of the topgate and the quantum capacitance of the nanoribbon are accounted for, the admittance of the device behaves like a classical serial RLC circuit with resonant frequencies ω\sim100-900 GHz and Q-factors greater than 10^{6}. These results indicate that graphene nanoribbons can serve as all-electronic ultra-high frequency oscillators and filters thereby extending the reach of high frequency electronics into new domains.
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Submitted 16 February, 2011;
originally announced February 2011.
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Aperiodic conductivity oscillations in quasi-ballistic graphene heterojunctions
Authors:
Milan Begliarbekov,
Onejae Sul,
Nan Ai,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were found to be inconsistent with pure Farbry-Perot-type interferences, but are in quantitative agreement with theoretical predictions that attribute them to resonant…
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We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were found to be inconsistent with pure Farbry-Perot-type interferences, but are in quantitative agreement with theoretical predictions that attribute them to resonant tunneling through quasi-bound impurity states. This observation may be understood as another signature of Klein tunneling in graphene heterojunctions and is of importance for future development and modeling of graphene based nanoelectronic devices.
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Submitted 8 September, 2010;
originally announced September 2010.
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Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors
Authors:
Nan Ai,
Onejae Sul,
Milan Begliarbekov,
Qiang Song,
Kitu Kumar,
Daniel S. Choi,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an elect…
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Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 10^5. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e. laterally ordered and scalable, as required for advanced quantum electronic devices.
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Submitted 7 July, 2010;
originally announced July 2010.
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Determination of Edge Purity in Bilayer Graphene Using micro-Raman Spectroscopy
Authors:
Milan Begliarbekov,
Onejae Sul,
Sokratis Kalliakos,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization c…
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Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization contrast reflects the fractional composition of armchair and zigzag edges, providing a monitor of edge purity, which is an important parameter for the development of efficient nanoelectronic devices.
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Submitted 29 June, 2010;
originally announced June 2010.
