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Light modulation in Silicon photonics by PZT actuated acoustic waves
Authors:
Irfan Ansari,
John P. George,
Gilles F. Feutmba,
Tessa Van de Veire,
Awanish Pandey,
Jeroen Beeckman,
Dries Van Thourhout
Abstract:
Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that ranges from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead Zirconate Titanate (PZT) is a promising material due to its strong piezoelectri…
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Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that ranges from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead Zirconate Titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on Silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a Silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in Silicon waveguides with the PZT actuated acoustic waves. We fabricate inter digital transducers (IDTs) on the PZT film with a contact photo-lithography and electron-beam lithography to generate the acoustic waves in MHz and GHz range respectively. We obtain a V$_π$L $\sim$ 3.35 V$\cdot$cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V$_π$L $\sim$ 3.60 V$\cdot$cm at 2 GHz from a 100 nm thick Aluminum (Al) IDT consisting of only 4 finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for broadband and efficient acousto-optic modulator for future integration.
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Submitted 22 May, 2022; v1 submitted 15 December, 2021;
originally announced December 2021.
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Nonlinear localization of light using the Pancharatnam-Berry phase
Authors:
C. P. Jisha,
A. Alberucci,
J. Beeckman,
S. Nolte
Abstract:
Since its introduction by Sir Michael Berry in 1984, geometric phase became of fundamental importance in physics, with applications ranging from solid state physics to optics. In optics, Pancharatnam-Berry phase allows the tailoring of optical beams by a local control of their polarization. Here we discuss light propagation in the presence of an intensity-dependent local modulation of the Panchara…
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Since its introduction by Sir Michael Berry in 1984, geometric phase became of fundamental importance in physics, with applications ranging from solid state physics to optics. In optics, Pancharatnam-Berry phase allows the tailoring of optical beams by a local control of their polarization. Here we discuss light propagation in the presence of an intensity-dependent local modulation of the Pancharatnam-Berry phase. The corresponding self-modulation of the wavefront counteracts the natural spreading due to diffraction, i.e., self-focusing takes place. No refractive index variation is associated with the self-focusing: the confinement is uniquely due to a nonlinear spin-orbit interaction. The phenomenon is investigated, both theoretically and experimentally, considering the reorientational nonlinearity in liquid crystals, where light is able to rotate the local optical axis through an intensity-dependent optical torque. Our discoveries pave the way to the investigation of a new family of nonlinear waves featuring a strong interaction between the spin and the orbital degrees of freedom.
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Submitted 5 November, 2018;
originally announced November 2018.
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Nanophotonic Pockels modulators on a silicon nitride platform
Authors:
Koen Alexander,
John P. George,
Jochem Verbist,
Kristiaan Neyts,
Bart Kuyken,
Dries Van Thourhout,
Jeroen Beeckman
Abstract:
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead…
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Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O- and the C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses ($α\approx 1$ dB/cm). A $V_πL\approx$ 3.2 Vcm is measured. Simulations indicate that values below 2 Vcm are achievable. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.
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Submitted 13 June, 2018; v1 submitted 7 May, 2018;
originally announced May 2018.
