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Photoinduced Patterning of Oxygen Vacancies to Promote the Ferroelectric Phase of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$
Authors:
Thomas E Beechem,
Fernando Vega,
Samantha T. Jaszewski,
Benjamin L. Aronson,
Kyle P. Kelley,
Jon F. Ihlefeld
Abstract:
Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) thin-films. Modest ($\sim 0.02-0.77~\mathrm{mJ/μm^2}$) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTI…
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Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) thin-films. Modest ($\sim 0.02-0.77~\mathrm{mJ/μm^2}$) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTIR measurements showed that the photoinduced oxygen vacancy concentration reduction promoted formation of the ferroelectric phase (space group $Pca2_1$) resulting in an increase in the piezoelectric response measured by piezoresponse force microscopy. Photoinduced vacancy tailoring provides, therefore, a spatially prescriptive, post-synthesis, and low-entry method to modify phase in \hfo-based materials.
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Submitted 17 June, 2024;
originally announced June 2024.
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Unidirectional Ray Polaritons in Twisted Asymmetric Stacks
Authors:
J. Álvarez-Cuervo,
M. Obst,
S. Dixit,
G. Carini,
A. I. F. Tresguerres-Mata,
C. Lanza,
E. Terán-García,
G. Álvarez-Pérez,
L. Fernández-Álvarez,
K. Diaz-Granados,
R. Kowalski,
A. S. Senerath,
N. S. Mueller,
L. Herrer,
J. M. De Teresa,
S. Wasserroth,
J. M. Klopf,
T. Beechem,
M. Wolf,
L. M. Eng,
T. G. Folland,
A. Tarazaga Martín-Luengo,
J. Martín-Sánchez,
S. C. Kehr,
A. Y. Nikitin
, et al. (3 additional authors not shown)
Abstract:
The emergence of a vast repository of van der Waals (vdW) materials supporting polaritons - light coupled to matter excitations - offers a plethora of different possibilities to tailor electromagnetic waves at the subwavelength-scale. In particular, the development of twistoptics - the study of the optical properties of twisted stacks of vdW materials - allows the directional propagation of phonon…
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The emergence of a vast repository of van der Waals (vdW) materials supporting polaritons - light coupled to matter excitations - offers a plethora of different possibilities to tailor electromagnetic waves at the subwavelength-scale. In particular, the development of twistoptics - the study of the optical properties of twisted stacks of vdW materials - allows the directional propagation of phonon polaritons (PhPs) along a single spatial direction, which has been coined as canalization. Here we demonstrate a complementary type of nanoscale unidirectional propagation that naturally emerges thanks to twistoptics: unidirectional ray polaritons (URPs). This natural phenomenon arises in two types of twisted hyperbolic stacks: homostructures of $α$-MoO$_3$ and heterostructures of $α$-MoO$_3$ and $β$-Ga$_2$O$_3$, each with very different thicknesses of its constituents. URPs are characterized by the absence of diffraction and the presence of a single phase of the propagating field. Importantly, we demonstrate that this ray behavior can be tuned by means of both relative twist angle and illumination frequency variations. Additionally, an unprecedented "pinwheel-like" propagation emerges at specific twist angles of the homostructure. We show that URPs emerge due to the twist between asymmetrically stacked biaxial slabs, while the shear effect in monoclinic $β$-Ga$_2$O$_3$ is of minor importance. Our findings demonstrate a natural way to excite unidirectional ray-like PhPs and offer a unique platform for controlling the propagation of PhPs at the nanoscale with many potential applications like nanoimaging, (bio)-sensing or polaritonic thermal management.
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Submitted 25 April, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
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Material Characteristics Governing In-Plane Phonon-Polariton Thermal Conductance
Authors:
Jacob D. Minyard,
Thomas E. Beechem
Abstract:
The material dependence of phonon-polariton based in-plane thermal conductance is investigated by examining systems composed of air and several wurtzite and zinc-blende crystals. Phonon-polariton based thermal conductance varies by over an order of magnitude ($\sim 0.5-60$ nW/K), which is similar to the variation observed in the materials corresponding bulk thermal conductivity. Regardless of mate…
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The material dependence of phonon-polariton based in-plane thermal conductance is investigated by examining systems composed of air and several wurtzite and zinc-blende crystals. Phonon-polariton based thermal conductance varies by over an order of magnitude ($\sim 0.5-60$ nW/K), which is similar to the variation observed in the materials corresponding bulk thermal conductivity. Regardless of material, phonon-polaritons exhibit similar thermal conductance to that of phonons when layers become ultrathin ($\sim 10$ nm) suggesting the generality of the effect at these length-scales. A figure of merit is proposed to explain the large variation of in-plane polariton thermal conductance that is composed entirely of easily predicted and measured optical phonon energies and lifetimes. Using this figure of merit, in-plane phonon-polariton thermal conductance enlarges with increases in: (1) optical phonon energies, (2) splitting between transverse and longitudinal mode pairs, and (3) phonon lifetimes.
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Submitted 4 October, 2023; v1 submitted 25 August, 2023;
originally announced August 2023.
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Near-field Imaging of Optical Resonances in Silicon Metasurfaces Using Photoelectron Microscopy
Authors:
Alex Boehm,
Sylvain D. Gennaro,
Chloe F. Doiron,
Thomas E. Beechem,
Michael B. Sinclair,
Igal Brener,
Raktim Sarma,
Taisuke Ohta
Abstract:
Precise control of light-matter interactions at the nanoscale lies at the heart of nanophotonics. Experimental examination at this length scale is challenging, however, since the corresponding electromagnetic near-field is often confined within volumes below the resolution of conventional optical microscopy. In semiconductor nanophotonics electromagnetic fields are further restricted within the co…
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Precise control of light-matter interactions at the nanoscale lies at the heart of nanophotonics. Experimental examination at this length scale is challenging, however, since the corresponding electromagnetic near-field is often confined within volumes below the resolution of conventional optical microscopy. In semiconductor nanophotonics electromagnetic fields are further restricted within the confines of individual subwavelength resonators, limiting access to critical light-matter interactions in these structures. In this work, we demonstrate that photoelectron emission microscopy (PEEM) can be used for polarization resolved near-field spectroscopy and imaging of electromagnetic resonances supported by broken-symmetry silicon metasurfaces. We find that the photoemission results, enabled through an in-situ potassium surface layer, are consistent with full-wave simulations and far-field reflectance measurements across visible and near-infrared wavelengths. In addition, we uncover a polarization dependent evolution of collective resonances near the metasurface array edge taking advantage of the far-field excitation and full-field imaging of PEEM. Here, we deduce that coupling between eight resonators or more establishes the collective excitations of this metasurface. All told, we demonstrate that the high-spatial resolution hyperspectral imaging and far-field illumination of PEEM can be leveraged for the metrology of collective, non-local, optical resonances in semiconductor nanophotonic structures.
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Submitted 12 June, 2024; v1 submitted 24 February, 2023;
originally announced February 2023.
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Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy
Authors:
Saadia Nasir,
Walter J. Smith,
Thomas E. Beechem,
Stephanie Law
Abstract:
Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi$_2$Se$_3$ may exhibit quantum spin Hall states. However, growing coalesce…
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Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi$_2$Se$_3$ may exhibit quantum spin Hall states. However, growing coalesced ultra-thin Bi$_2$Se$_3$ films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi$_2$Se$_3$ films having thickness down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pre-treatment -- growing and decomposing a few layers of \BiSe before the actual deposition -- is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Overall, coalesced ultra-thin Bi$_2$Se$_3$ films with lower surface roughness enables thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.
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Submitted 31 August, 2022; v1 submitted 30 August, 2022;
originally announced August 2022.
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Detection of High Energy Ionizing Radiation using Deeply Depleted Graphene-Oxide-Semiconductor Junctions
Authors:
Isaac Ruiz,
Gyorgy Vizkelethy,
Anthony E. McDonald,
Stephen W. Howell,
Paul M. Thelen,
Michael D. Goldflam,
Thomas E. Beechem
Abstract:
Graphene's linear bandstructure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene-oxide-semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of the silicon-based D2GOS junction is analyzed during irradi…
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Graphene's linear bandstructure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene-oxide-semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of the silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12-1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent map**. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.
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Submitted 3 August, 2022;
originally announced August 2022.
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Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices
Authors:
Eric R. Hoglund,
De-Liang Bao,
Andrew O'Hara,
Sara Makarem,
Zachary T. Piontkowski,
Joseph R. Matson,
Ajay K. Yadav,
Ryan C. Haisimaier,
Roman Engel-Herbert,
Jon F. Ihlefeld,
Jayakanth Ravichandran,
Ramamoorthy Ramesh,
Joshua D. Caldwell,
Thomas E. Beechem,
John A. Tomko,
Jordan A. Hachtel,
Sokrates T. Pantelides,
Patrick E. Hopkins,
James M. Howe
Abstract:
As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity…
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As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses.
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Submitted 4 October, 2021; v1 submitted 20 May, 2021;
originally announced May 2021.
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Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions
Authors:
Shruti Subramanian,
Quinn T. Campbell,
Simon Moser,
Jonas Kiemle,
Philipp Zimmermann,
Paul Seifert,
Florian Sigger,
Deeksha Sharma,
Hala Al-Sadeg,
Michael Labella III,
Dacen Waters,
Randall M. Feenstra,
Roland J. Koch,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Ismaila Dabo,
Alexander Holleitner,
Thomas E. Beechem,
Ursula Wurstbauer,
Joshua A. Robinson
Abstract:
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x large…
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Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent map** allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.
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Submitted 25 June, 2020;
originally announced June 2020.
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Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors
Authors:
François Léonard,
Catalin D. Spataru,
Michael Goldflam,
David W. Peters,
Thomas E. Beechem
Abstract:
Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to…
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Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at the contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even the absence of phonon or impurity scattering. We also show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent.
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Submitted 6 March, 2017;
originally announced March 2017.
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Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides
Authors:
Adam Ahmed,
Hua Wen,
Taisuke Ohta,
Igor Pinchuk,
Tiancong Zhu,
Thomas Beechem,
Roland Kawakami
Abstract:
We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Transport measurements of exfoliated graphene aft…
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We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.
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Submitted 20 November, 2015;
originally announced November 2015.
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Electronic Hybridization of Large-Area Stacked Graphene Films
Authors:
Jeremy T. Robinson,
Scott W. Schmucker,
C. Bogdan Diaconescu,
James P. Long,
James C. Culbertson,
Taisuke Ohta,
Adam L. Friedman,
Thomas E. Beechem
Abstract:
Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and characterization of large-area (> cm^2), coupled bilayer graphene on SiO2/Si substrates. Stacking two graphene films leads to direct electronic intera…
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Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and characterization of large-area (> cm^2), coupled bilayer graphene on SiO2/Si substrates. Stacking two graphene films leads to direct electronic interactions between layers, where the resulting film properties are determined by the local twist angle. Polycrystalline bilayer films have a "stained-glass window" appearance explained by the emergence of a narrow absorption band in the visible spectrum that depends on twist angle. Direct measurement of layer orientation via electron diffraction, together with Raman and optical spectroscopy, confirms the persistence of clean interfaces over large areas. Finally, we demonstrate that interlayer coupling can be reversibly turned off through chemical modification, enabling optical-based chemical detection schemes. Together, these results suggest that individual 2D crystals can be individually assembled to form electronically coupled systems suitable for large-scale applications.
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Submitted 2 January, 2013;
originally announced January 2013.
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Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
Authors:
Kayoung Lee,
Seyoung Kim,
M. S. Points,
T. E. Beechem,
Taisuke Ohta,
E. Tutuc
Abstract:
We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hop** transport in a gapped state. In a perpendic…
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We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hop** transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors ($ν$) multiple of four ($ν=4, 8, 12$), as well as broken valley symmetry QHSs at $ν=0$ and $ν=6$. These results unambiguously show that the quasi-free standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.
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Submitted 13 August, 2011; v1 submitted 11 August, 2011;
originally announced August 2011.
