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Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing
Authors:
Carlos G. Torres-Castanedo,
Dominic P. Goronzy,
Thang Pham,
Anthony McFadden,
Nicholas Materise,
Paul Masih Das,
Matthew Cheng,
Dmitry Lebedev,
Stephanie M. Ribet,
Mitchell J. Walker,
David A. Garcia-Wetten,
Cameron J. Kopas,
Jayss Marshall,
Ella Lachman,
Nikolay Zhelev,
James A. Sauls,
Joshua Y. Mutus,
Corey Rae H. McRae,
Vinayak P. Dravid,
Michael J. Bedzyk,
Mark C. Hersam
Abstract:
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti…
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Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.
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Submitted 5 April, 2024;
originally announced April 2024.
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Enhanced Imaging of Electronic Hot Spots Using Quantum Squeezed Light
Authors:
Haechan An,
Ali Najjar Amiri,
Dominic P. Goronzy,
David A. Garcia Wetten,
Michael J. Bedzyk,
Ali Shakouri,
Mark C. Hersam,
Mahdi Hosseini
Abstract:
Detecting electronic hot spots is important for understanding the heat dissipation and thermal management of electronic and semiconductor devices. Optical thermoreflective imaging is being used to perform precise temporal and spatial imaging of heat on wires and semiconductor materials. We apply quantum squeezed light to perform thermoreflective imaging on micro-wires, surpassing the shot-noise li…
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Detecting electronic hot spots is important for understanding the heat dissipation and thermal management of electronic and semiconductor devices. Optical thermoreflective imaging is being used to perform precise temporal and spatial imaging of heat on wires and semiconductor materials. We apply quantum squeezed light to perform thermoreflective imaging on micro-wires, surpassing the shot-noise limit of classical approaches. We obtain a far-field temperature sensing accuracy of 42 mK after 50 ms of averaging and show that a $256\times256$ pixel image can be constructed with such sensitivity in 10 minutes. We can further obtain single-shot temperature sensing of 1.6 K after only 10 $\mathrm{μs}$ of averaging enabling dynamical study of heat dissipation. Not only do the quantum images provide accurate spatio-temporal information about heat distribution, but the measure of quantum correlation provides additional information, inaccessible by classical techniques, that can lead to a better understanding of the dynamics. We apply the technique to both Al and Nb microwires and discuss the applications of the technique in studying electron dynamics at low temperatures.
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Submitted 22 March, 2024;
originally announced March 2024.
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Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
**-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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An Incremental Phase Map** Approach for X-ray Diffraction Patterns using Binary Peak Representations
Authors:
Dipendra Jha,
K. V. L. V. Narayanachari,
Ruifeng Zhang,
Justin Liao,
Denis T. Keane,
Wei-keng Liao,
Alok Choudhary,
Yip-Wah Chung,
Michael Bedzyk,
Ankit Agrawal
Abstract:
Despite the huge advancement in knowledge discovery and data mining techniques, the X-ray diffraction (XRD) analysis process has mostly remained untouched and still involves manual investigation, comparison, and verification. Due to the large volume of XRD samples from high-throughput XRD experiments, it has become impossible for domain scientists to process them manually. Recently, they have star…
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Despite the huge advancement in knowledge discovery and data mining techniques, the X-ray diffraction (XRD) analysis process has mostly remained untouched and still involves manual investigation, comparison, and verification. Due to the large volume of XRD samples from high-throughput XRD experiments, it has become impossible for domain scientists to process them manually. Recently, they have started leveraging standard clustering techniques, to reduce the XRD pattern representations requiring manual efforts for labeling and verification. Nevertheless, these standard clustering techniques do not handle problem-specific aspects such as peak shifting, adjacent peaks, background noise, and mixed phases; hence, resulting in incorrect composition-phase diagrams that complicate further steps. Here, we leverage data mining techniques along with domain expertise to handle these issues. In this paper, we introduce an incremental phase map** approach based on binary peak representations using a new threshold based fuzzy dissimilarity measure. The proposed approach first applies an incremental phase computation algorithm on discrete binary peak representation of XRD samples, followed by hierarchical clustering or manual merging of similar pure phases to obtain the final composition-phase diagram. We evaluate our method on the composition space of two ternary alloy systems- Co-Ni-Ta and Co-Ti-Ta. Our results are verified by domain scientists and closely resembles the manually computed ground-truth composition-phase diagrams. The proposed approach takes us closer towards achieving the goal of complete end-to-end automated XRD analysis.
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Submitted 8 November, 2022;
originally announced November 2022.
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Characterization of Nb films for superconducting qubits using phase boundary measurements
Authors:
Kevin M. Ryan,
Carlos G. Torres-Castanedo,
Dominic P. Goronzy,
David A. Garcia Wetter,
Matthew J Reagor,
Mark Field,
Cameron J Kopas,
Jayss Marshall,
Michael J. Bedzyk,
Mark C. Hersam,
Venkat Chandrasekhar
Abstract:
Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits.…
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Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries, and are thought to be a major source of qubit decoherence at millikelvin temperatures. In addition to Al, Nb is a commonly used metalization layer for superconducting qubits. Consequently, a significant effort is required to develop and qualify processes that mitigate defects in Nb films. As the fabrication of complete superconducting qubits and their characterization at millikelvin temperatures is a time and resource intensive process, it is desirable to have measurement tools that can rapidly characterize the properties of films and evaluate different treatments. Here we show that measurements of the variation of the superconducting critical temperature $T_c$ with an applied external magnetic field $H$ (of the phase boundary $T_c - H$) performed with very high resolution show features that are directly correlated with the structure of the Nb films. In combination with x-ray diffraction measurements, we show that one can even distinguish variations quality and crystal orientation of the grains in a Nb film by small but reproducible changes in the measured superconducting phase boundary.
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Submitted 8 August, 2022; v1 submitted 26 July, 2022;
originally announced July 2022.
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Site-specific surface atom valence band structure via X-ray standing wave excited photoemission
Authors:
Yanna Chen,
Leighton O. Jones,
Tien-Lin Lee,
Anusheela Das,
Martin A. Mosquera,
Denis T. Keane,
George C. Schatz,
Michael J. Bedzyk
Abstract:
X-ray standing wave (XSW) excited photoelectron emission was used to measure the site-specific valence band (VB) for 1/2 monolayer (ML) Pt grown on a SrTiO3 (001) surface. The XSW induced modulations in the core level (CL) and VB photoemission from the surface and substrate atoms were monitored for three hkl substrate Bragg reflections. The XSW CL analysis shows the Pt to have an fcc-like cube-on-…
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X-ray standing wave (XSW) excited photoelectron emission was used to measure the site-specific valence band (VB) for 1/2 monolayer (ML) Pt grown on a SrTiO3 (001) surface. The XSW induced modulations in the core level (CL) and VB photoemission from the surface and substrate atoms were monitored for three hkl substrate Bragg reflections. The XSW CL analysis shows the Pt to have an fcc-like cube-on-cube epitaxy with the substrate. The XSW VB information compares well to a density functional theory calculated projected density of states from the surface and substrate atoms. Overall, this work represents a novel method for determining the contribution to the density of states by valence electrons from specific atomic surface sites.
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Submitted 11 January, 2022;
originally announced January 2022.
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Ultrafast ferromagnetic fluctuations preceding magnetoelastic first-order transitions
Authors:
Zhao Zhang,
Yanna Chen,
Dehong Yu,
Richard Mole,
Chenyang Yu,
Zhe Zhang,
Houbo Zhou,
Xuexi Yan,
Xinguo Zhao,
Weijun Ren,
Chunlin Chen,
Shigeki Owada,
Kensuke Tono,
Michihiro Sugahara,
Yue Cao,
Osami Sakata,
Michael J. Bedzyk,
Bing Li,
Fengxia Hu,
Baogen Shen,
Zhidong Zhang
Abstract:
First-order magnetic transitions are of both fundamental and technological interest given that a number of emergent phases and functionalities are thereby created. Of particular interest are giant magnetocaloric effects, which are attributed to first-order magnetic transitions and have attracted broad attention for solid-state refrigeration applications. While the conventional wisdom is that atomi…
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First-order magnetic transitions are of both fundamental and technological interest given that a number of emergent phases and functionalities are thereby created. Of particular interest are giant magnetocaloric effects, which are attributed to first-order magnetic transitions and have attracted broad attention for solid-state refrigeration applications. While the conventional wisdom is that atomic lattices play an important role in first-order magnetic transitions, a coherent microscopic description of the lattice and spin degrees of freedom is still lacking. Here, we study the magnetic phase transition dynamics on the intermetallic LaFe13-xSix, which is one of the most classical giant magnetocaloric systems, in both frequency and time domains utilizing neutron scattering and ultrafast X-ray diffraction. We have observed a strong magnetic diffuse scattering in the paramagnetic state preceding the first-order magnetic transition, corresponding to picosecond ferromagnetic fluctuations. Upon photon-excitation, the ferromagnetic state is completely suppressed in 0.9 ps and recovered in 20 ps. The ultrafast dynamics suggest that the magnetic degree of freedom dominates this magnetoelastic transition and ferromagnetic fluctuations might be universally relevant for this kind of compounds.
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Submitted 6 December, 2020;
originally announced December 2020.
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Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene
Authors:
Xiaolong Liu,
Itamar Balla,
Hadallia Bergeron,
Gavin P. Campbell,
Michael J. Bedzyk,
Mark C. Hersam
Abstract:
Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensura…
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Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced bandgap of ~0.4 eV at the monolayer MoS2 edges.
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Submitted 3 April, 2016;
originally announced April 2016.
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Enhanced Spin and Electronic Reconstructions at the Cuprate-Manganite Interface
Authors:
B. A. Gray,
E. J. Moon,
I. C. Tung,
M. Kareev,
Jian Liu,
D. J. Meyers,
M. J. Bedzyk,
J. W. Freeland,
J. Chakhalian
Abstract:
We report on a resonant soft X-ray spectroscopy study of the electronic and magnetic structure of the cuprate-manganite interface. Polarized X-ray spectroscopy measurements taken at the Cu L edge reveal up to a five-fold increase in the dichroic signal as compared to past experimental and theoretical values. Furthermore an increase in the degree of interlayer charge transfer up to 0.25e (where e i…
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We report on a resonant soft X-ray spectroscopy study of the electronic and magnetic structure of the cuprate-manganite interface. Polarized X-ray spectroscopy measurements taken at the Cu L edge reveal up to a five-fold increase in the dichroic signal as compared to past experimental and theoretical values. Furthermore an increase in the degree of interlayer charge transfer up to 0.25e (where e is charge of an electron) per copper ion is observed leading to a profound reconstruction in the orbital scheme for these interfacial copper ions. It is inferred that these enhancement are related to an increase in TMI observed for manganite layers grown with rapidly modulated flux.
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Submitted 16 January, 2013;
originally announced January 2013.
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Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics
Authors:
Vinod K. Sangwan,
Rocio Ponce Ortiz,
Justice M. P. Alaboson,
Jonathan D. Emery,
Michael J. Bedzyk,
Lincoln J. Lauhon,
Tobin J. Marks,
Mark C. Hersam
Abstract:
In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in post-growth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate…
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In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in post-growth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm^2/Vs), sub-threshold swing (150 mV/decade), and on/off ratio (5 x 10^5), while also achieving hysteresis-free operation in ambient conditions.
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Submitted 14 September, 2012;
originally announced September 2012.
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Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates
Authors:
D. J. Meyers,
E. J. Moon,
M. Kareev,
I. C. Tung,
B. A. Gray,
Jian Liu,
M. J. Bedzyk,
J. W. Freeland,
J. Chakhalian
Abstract:
We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through map** the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in…
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We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through map** the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in terms of epitaxial stabilization and the escalation of the lattice energy due to lattice distortions and decreasing symmetry. These findings are fundamental to other complex oxide perovskites, and provide a route to the synthesis of other perovskite structures in ultrathin-film form.
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Submitted 22 December, 2011;
originally announced December 2011.
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Asymmetric orbital-lattice interactions in ultra-thin correlated oxide films
Authors:
J. Chakhalian,
J. M. Rondinelli,
Jian Liu,
B. A. Gray,
M. Kareev,
E. J. Moon,
N. Prasai,
J. L. Cohn,
M. Varela,
I. C. Tung,
M. J. Bedzyk,
S. G. Altendorf,
F. Strigari,
B. Dabrowski,
L. H. Tjeng,
P. J. Ryan,
J. W. Freeland
Abstract:
Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state…
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Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.
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Submitted 25 August, 2011; v1 submitted 7 August, 2010;
originally announced August 2010.
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X-Ray Standing Waves at the Total Reflection Condition: Direct Method and Coherence Effects
Authors:
Michael J. Bedzyk
Abstract:
Fresnel theory is used to derive the complex electric-fields above and below an X-ray reflecting interface that separates two materials with differing indices of refraction. The interference between the incident and reflected waves produces an X-ray standing wave (XSW) above the reflecting interface. The XSW intensity modulation is strongly enhanced by the total external reflection (TR) conditio…
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Fresnel theory is used to derive the complex electric-fields above and below an X-ray reflecting interface that separates two materials with differing indices of refraction. The interference between the incident and reflected waves produces an X-ray standing wave (XSW) above the reflecting interface. The XSW intensity modulation is strongly enhanced by the total external reflection (TR) condition, which occurs at incident angles less than the critical angle. At these small milliradian incident angles the XSW period (lambda/2theta) becomes very large, which makes the TR-XSW an ideal probe for studying low-density structures that extend 1 to 1000 nm above the reflecting interface. Fourier inversion of the XSW induced modulation in the X-ray fluorescence (XRF) yield from a specific atomic distribution within the overlayer directly produces a model-independent 1-D atomic density profile. The modulation can also be used to analyze the degree of coherence in the incident X-ray beam.
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Submitted 14 August, 2009;
originally announced August 2009.
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Spin-Charge-Lattice Coupling through Resonant Multi-Magnon Excitations in Multiferroic BiFeO3
Authors:
M. O. Ramirez,
A. Kumar,
S. A. Denev,
Y. H. Chu,
J. Seidel,
L. Martin,
S-Y. Yang R. C. Rai,
X. Xue,
J. F. Ihlefeld,
N. Podraza,
E. Saiz,
S. Lee,
J. Klug,
S. W. Cheong,
M. J. Bedzyk,
O. Auciello,
D. G. Schlom,
J. Orenstein,
R. Ramesh,
J. L. Musfeldt,
A. P. Litvinchuk,
V. Gopalan
Abstract:
Spin-charge-lattice coupling mediated by multi-magnon processes is demonstrated in multiferroic BiFeO3. Experimental evidence of two and three magnons excitations as well as multimagnon coupling at electronic energy scales and high temperatures are reported. Temperature dependent Raman experiments show up to five resonant enhancements of the 2-magnon excitation below the Neel temperature. These…
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Spin-charge-lattice coupling mediated by multi-magnon processes is demonstrated in multiferroic BiFeO3. Experimental evidence of two and three magnons excitations as well as multimagnon coupling at electronic energy scales and high temperatures are reported. Temperature dependent Raman experiments show up to five resonant enhancements of the 2-magnon excitation below the Neel temperature. These are shown to be collective interactions between on-site Fe d-d electronic resonance, phonons and multimagnons
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Submitted 7 January, 2009; v1 submitted 24 March, 2008;
originally announced March 2008.