-
Tailored topotactic chemistry unlocks heterostructures of magnetic intercalation compounds
Authors:
Samra Husremović,
Oscar Gonzalez,
Berit H. Goodge,
Lilia S. Xie,
Zhizhi Kong,
Wanlin Zhang,
Sae Hee Ryu,
Stephanie M. Ribet,
Karen C. Bustillo,
Chengyu Song,
Jim Ciston,
Takashi Taniguchi,
Kenji Watanabe,
Colin Ophus,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
D. Kwabena Bediako
Abstract:
The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However,…
▽ More
The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However, crystallographic incommensurability and atomic-scale interfacial disorder can severely limit the types of materials amenable to this strategy, as well as the performance of these systems. Here, we demonstrate a method for synthesizing heterostructures comprising magnetic intercalation compounds of transition metal dichalcogenides (TMDs), through directed topotactic reaction of the TMD with a metal oxide. The mechanism of the intercalation reaction enables thermally initiated intercalation of the TMD from lithographically patterned oxide films, giving access to a new family of multi-component magnetic architectures through the combination of deterministic van der Waals assembly and directed intercalation chemistry.
△ Less
Submitted 21 June, 2024;
originally announced June 2024.
-
Considerations for extracting moiré-level strain from dark field intensities in transmission electron microscopy
Authors:
Isaac M. Craig,
Madeline Van Winkle,
Colin Ophus,
D. Kwabena Bediako
Abstract:
Bragg interferometry (BI) is an imaging technique based on four-dimensional scanning electron microscopy (4D-STEM) wherein the intensities of select overlap** Bragg disks are fit or more qualitatively analyzed in the context of simple trigonometric equations to determine local stacking order. In 4D-STEM based approaches, the collection of full diffraction patterns at each real-space position of…
▽ More
Bragg interferometry (BI) is an imaging technique based on four-dimensional scanning electron microscopy (4D-STEM) wherein the intensities of select overlap** Bragg disks are fit or more qualitatively analyzed in the context of simple trigonometric equations to determine local stacking order. In 4D-STEM based approaches, the collection of full diffraction patterns at each real-space position of the scanning probe allows the use of precise virtual apertures much smaller and more variable in shape than those used in conventional dark field imaging, such that even buried interfaces marginally twisted from other layers can be targeted. A coarse-grained form of dark field ptychography, BI uses simple physically derived fitting functions to extract the average structure within the illumination region and is therefore viable over large fields of view. BI has shown a particular advantage for selectively investigating the interlayer stacking and associated moiré reconstruction of bilayer interfaces within complex multi-layered structures. This has enabled investigation of reconstruction and substrate effects in bilayers through encapsulating hexagonal boron nitride and of select bilayer interfaces within trilayer stacks. However, the technique can be improved to provide a greater spatial resolution and probe a wider range of twisted structures, for which current limitations on acquisition parameters can lead to large illumination regions and the computationally involved post-processing can fail. Here we analyze these limitations and the computational processing in greater depth, presenting a few methods for improvement over previous works, discussing potential areas for further expansion, and illustrating the current capabilities of this approach for extracting moiré-scale strain.
△ Less
Submitted 6 June, 2024;
originally announced June 2024.
-
Atomic engineering of interfacial polarization switching in van der Waals multilayers
Authors:
Madeline Van Winkle,
Nikita Dowlatshahi,
Nikta Khaloo,
Mrinalni Iyer,
Isaac M. Craig,
Rohan Dhall,
Takashi Taniguchi,
Kenji Watanabe,
D. Kwabena Bediako
Abstract:
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. H…
▽ More
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here, we show that introducing interlayer rotations in multilayer vdW heterostructures modulates both the spatial ordering and switching dynamics of polar domains, engendering unique tunability that is unparalleled in conventional bulk ferroelectrics or polar bilayers. Using operando transmission electron microscopy we show how changing the relative rotations of three WSe2 layers produces structural polytypes with distinct arrangements of polar domains, leading to either a global or localized switching response. Introducing uniaxial strain generates structural anisotropy that yields a range of switching behaviors, coercivities, and even tunable biased responses. We also provide evidence of physical coupling between the two interfaces of the trilayer, a key consideration for controlling switching dynamics in polar multilayer structures more broadly.
△ Less
Submitted 28 November, 2023;
originally announced November 2023.
-
Modulating the electrochemical intercalation of graphene interfaces with $α$-RuCl$_3$ as a solid-state electron acceptor
Authors:
Jonathon Nessralla,
Daniel T. Larson,
Takashi Taniguchi,
Kenji Watanabe,
Efthimios Kaxiras,
D. Kwabena Bediako
Abstract:
Intercalation reactions modify the charge density in van der Waals (vdW) materials through coupled electronic-ionic charge accumulation, and are susceptible to modulation by interlayer hybridization in vdW heterostructures. Here, we demonstrate that charge transfer between graphene and $α$-RuCl$_3$, which dopes the graphene positively, greatly favors the intercalation of lithium ions into graphene…
▽ More
Intercalation reactions modify the charge density in van der Waals (vdW) materials through coupled electronic-ionic charge accumulation, and are susceptible to modulation by interlayer hybridization in vdW heterostructures. Here, we demonstrate that charge transfer between graphene and $α$-RuCl$_3$, which dopes the graphene positively, greatly favors the intercalation of lithium ions into graphene-based vdW heterostructures. We systematically tune this effect on Li$^+$ ion intercalation, modulating the intercalation potential, by using varying thicknesses of hexagonal boron nitride (hBN) as spacer layers between graphene and $α$-RuCl$_3$. Confocal Raman spectroscopy and electronic transport measurements are used to monitor electrochemical intercalation and density functional theory computations help quantify charge transfer to both $α$-RuCl$_3$ and graphene upon Li intercalation. This work demonstrates a versatile approach for systematically modulating the electrochemical intercalation behavior of two-dimensional layers akin to electron donating/withdrawing substituent effects used to tune molecular redox potentials.
△ Less
Submitted 11 August, 2023;
originally announced August 2023.
-
Near room-temperature intrinsic exchange bias in an Fe intercalated ZrSe2 spin glass
Authors:
Zhizhi Kong,
Corey J. Kaminsky,
Catherine K. Groschner,
Ryan A. Murphy,
Yun Yu,
Samra Husremović,
Lilia S. Xie,
Matthew P. Erodici,
R. Soyoung Kim,
Junko Yano,
D. Kwabena Bediako
Abstract:
Some magnetic systems display a shift in the center of their magnetic hysteresis loop away from zero field, a phenomenon termed exchange bias. Despite the extensive use of the exchange bias effect, particularly in magnetic multilayers, for the design of spin-based memory/electronics devices, a comprehensive mechanistic understanding of this effect remains a longstanding problem. Recent work has sh…
▽ More
Some magnetic systems display a shift in the center of their magnetic hysteresis loop away from zero field, a phenomenon termed exchange bias. Despite the extensive use of the exchange bias effect, particularly in magnetic multilayers, for the design of spin-based memory/electronics devices, a comprehensive mechanistic understanding of this effect remains a longstanding problem. Recent work has shown that disorder-induced spin frustration might play a key role in exchange bias, suggesting new materials design approaches for spin-based electronic devices that harness this effect. Here, we design a spin glass with strong spin frustration induced by magnetic disorder by exploiting the distinctive structure of Fe intercalated ZrSe2, where Fe(II) centers are shown to occupy both octahedral and tetrahedral interstitial sites and to distribute between ZrSe2 layers without long-range structural order. Notably, we observe behavior consistent with a magnetically frustrated, and multi-degenerate ground state in these Fe0.17ZrSe2 single crystals, which persists above room temperature. Moreover, this magnetic frustration leads to a robust and tunable exchange bias up to 250 K. These results not only offer important insights into the effects of magnetic disorder and frustration in magnetic materials generally, but also highlight as design strategy the idea that a large exchange bias can arise from an inhomogeneous microscopic environment without discernible long-range magnetic order. In addition, these results show that intercalated TMDs like Fe0.17ZrSe2 hold potential for spintronics technologies that can achieve room temperature applications.
△ Less
Submitted 25 August, 2023; v1 submitted 10 July, 2023;
originally announced July 2023.
-
Comparative Electronic Structures of the Chiral Helimagnets Cr1/3NbS2 and Cr1/3TaS2
Authors:
Lilia S. Xie,
Oscar Gonzalez,
Kejun Li,
Matteo Michiardi,
Sergey Gorovikov,
Sae Hee Ryu,
Shannon S. Fender,
Marta Zonno,
Na Hyun Jo,
Sergey Zhdanovich,
Chris Jozwiak,
Aaron Bostwick,
Samra Husremovic,
Matthew P. Erodici,
Cameron Mollazadeh,
Andrea Damascelli,
Eli Rotenberg,
Yuan **,
D. Kwabena Bediako
Abstract:
Magnetic materials with noncollinear spin textures are promising for spintronic applications. To realize practical devices, control over the length and energy scales of such spin textures is imperative. The chiral helimagnets Cr1/3NbS2 and Cr1/3TaS2 exhibit analogous magnetic phase diagrams with different real-space periodicities and field dependence, positioning them as model systems for studying…
▽ More
Magnetic materials with noncollinear spin textures are promising for spintronic applications. To realize practical devices, control over the length and energy scales of such spin textures is imperative. The chiral helimagnets Cr1/3NbS2 and Cr1/3TaS2 exhibit analogous magnetic phase diagrams with different real-space periodicities and field dependence, positioning them as model systems for studying the relative strengths of the microscopic mechanisms giving rise to exotic spin textures. Here, we carry out a comparative study of the electronic structures of Cr1/3NbS2 and Cr1/3TaS2 using angle-resolved photoemission spectroscopy and density functional theory. We show that bands in Cr1/3TaS2 are more dispersive than their counterparts in Cr1/3NbS2 and connect this result to bonding and orbital overlap in these materials. We also unambiguously distinguish exchange splitting from surface termination effects by studying the dependence of their photoemission spectra on polarization, temperature, and beam size. We find strong evidence that hybridization between intercalant and host lattice electronic states mediates the magnetic exchange interactions in these materials, suggesting that band engineering is a route toward tuning their spin textures. Overall, these results underscore how the modular nature of intercalated transition metal dichalcogenides translates variation in composition and electronic structure to complex magnetism.
△ Less
Submitted 22 May, 2023; v1 submitted 15 May, 2023;
originally announced May 2023.
-
Consequences and control of multi-scale (dis)order in chiral magnetic textures
Authors:
Berit H. Goodge,
Oscar Gonzalez,
Lilia S. Xie,
D. Kwabena Bediako
Abstract:
Transition metal-intercalated transition metal dichalcogenides (TMDs) are promising platforms for next-generation spintronic devices based on their wide range of electronic and magnetic phases, which can be tuned by varying the host lattice or the identity of the intercalant, along with its stoichiometry and spatial order. Some of these compounds host a chiral magnetic phase in which the helical w…
▽ More
Transition metal-intercalated transition metal dichalcogenides (TMDs) are promising platforms for next-generation spintronic devices based on their wide range of electronic and magnetic phases, which can be tuned by varying the host lattice or the identity of the intercalant, along with its stoichiometry and spatial order. Some of these compounds host a chiral magnetic phase in which the helical winding of magnetic moments propagates along a high-symmetry crystalline axis. Previous studies have demonstrated that variation in intercalant concentrations can have a dramatic impact on the formation of chiral domains and ensemble magnetic properties. However, a systematic and comprehensive study of how atomic-scale order and disorder impacts collective magnetic behavior are so far lacking. Here, we leverage a combination of imaging modes in the (scanning) transmission electron microscope (S/TEM) to directly probe (dis)order across multiple length scales and show how subtle changes in the atomic lattice can be leveraged to tune the mesoscale spin textures and bulk magnetic response, with direct implications for the fundamental understanding and technological implementation of such compounds.
△ Less
Submitted 11 May, 2023;
originally announced May 2023.
-
Local atomic stacking and symmetry in twisted graphene trilayers
Authors:
Isaac M. Craig,
Madeline Van Winkle,
Catherine Groschner,
Kaidi Zhang,
Nikita Dowlatshahi,
Ziyan Zhu,
Takashi Taniguchi,
Kenji Watanabe,
Sinéad M. Griffin,
D. Kwabena Bediako
Abstract:
Moiré superlattices formed from twisting trilayers of graphene are an ideal model for studying electronic correlation, and offer several advantages over bilayer analogues, including more robust and tunable superconductivity and a wide range of twist angles associated with flat band formation. Atomic reconstruction, which strongly impacts the electronic structure of twisted graphene structures, has…
▽ More
Moiré superlattices formed from twisting trilayers of graphene are an ideal model for studying electronic correlation, and offer several advantages over bilayer analogues, including more robust and tunable superconductivity and a wide range of twist angles associated with flat band formation. Atomic reconstruction, which strongly impacts the electronic structure of twisted graphene structures, has been suggested to play a major role in the relative versatility of superconductivity in trilayers. Here, we exploit an inteferometric 4D-STEM approach to image a wide range of trilayer graphene structures. Our results unveil a considerably different model for moiré lattice relaxation in trilayers than that proposed from previous measurements, informing a thorough understanding of how reconstruction modulates the atomic stacking symmetries crucial for establishing superconductivity and other correlated phases in twisted graphene trilayers.
△ Less
Submitted 6 June, 2024; v1 submitted 16 March, 2023;
originally announced March 2023.
-
Anomalous interfacial electron transfer kinetics in twisted trilayer graphene caused by layer-specific localization
Authors:
Kaidi Zhang,
Yun Yu,
Stephen Carr,
Mohammad Babar,
Ziyan Zhu,
Bryan Kim,
Catherine Groschner,
Nikta Khaloo,
Takashi Taniguchi,
Kenji Watanabe,
Venkatasubramanian Viswanathan,
D. Kwabena Bediako
Abstract:
Interfacial electron-transfer (ET) reactions underpin the interconversion of electrical and chemical energy. Pioneering experiments showed that the ET rate depends on the Fermi Dirac distribution of the electronic density of states (DOS) of the electrode, formalized in the Marcus Hush Chidsey (MHC) model. Here, by controlling interlayer twists in well-defined trilayergraphene moires, we show that…
▽ More
Interfacial electron-transfer (ET) reactions underpin the interconversion of electrical and chemical energy. Pioneering experiments showed that the ET rate depends on the Fermi Dirac distribution of the electronic density of states (DOS) of the electrode, formalized in the Marcus Hush Chidsey (MHC) model. Here, by controlling interlayer twists in well-defined trilayergraphene moires, we show that ET rates are strikingly dependent on electronic localization in each atomic layer, and not the overall DOS. The large degree of tunability inherent to moire electrodes leads to local ET kinetics that range over three orders of magnitude across different constructions of only three atomic layers, even exceeding rates at bulk metals. Our results demonstrate that beyond the ensemble DOS, electronic localization is critical in facilitating interfacial ET, with implications for understanding the origin of high interfacial reactivity typically exhibited by defects at electrode electrolyte interfaces.
△ Less
Submitted 16 March, 2023;
originally announced March 2023.
-
Encoding multistate charge order and chirality in endotaxial heterostructures
Authors:
S. Husremović,
B. H. Goodge,
M. Erodici,
K. Inzani,
A. Mier,
S. M. Ribet,
K. C. Bustillo,
T. Taniguchi,
K. Watanabe,
C. Ophus,
S. M. Griffin,
D. K. Bediako
Abstract:
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1$T$-TaS$_2$ due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS$_2$ devices. Here, we demonstrate the fabrication of nanothick vert…
▽ More
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1$T$-TaS$_2$ due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS$_2$ devices. Here, we demonstrate the fabrication of nanothick verti-lateral $H$-TaS$_2$/1$T$-TaS$_2$ heterostructures in which the number of endotaxial metallic $H$-TaS$_2$ monolayers dictates the number of resistance transitions in 1$T$-TaS$_2$ lamellae near room temperature. Further, we also observe optically active heterochirality in the CDW superlattice structure, which is modulated in concert with the resistivity steps, and we show how strain engineering can be used to nucleate these polytype conversions. This work positions the principle of endotaxial heterostructures as a promising conceptual framework for reliable, non-volatile, and multi-level switching of structure, chirality, and resistance.
△ Less
Submitted 3 September, 2023; v1 submitted 8 March, 2023;
originally announced March 2023.
-
Rotational and Dilational Reconstruction in Transition Metal Dichalcogenide Moiré Bilayers
Authors:
Madeline Van Winkle,
Isaac M. Craig,
Stephen Carr,
Medha Dandu,
Karen C. Bustillo,
Jim Ciston,
Colin Ophus,
Takashi Taniguchi,
Kenji Watanabe,
Archana Raja,
Sinéad M. Griffin,
D. Kwabena Bediako
Abstract:
Lattice reconstruction and corresponding strain accumulation play a key role in defining the electronic structure of two-dimensional moiré superlattices, including those of transition metal dichalcogenides (TMDs). Imaging of TMD moirés has so far provided a qualitative understanding of this relaxation process in terms of interlayer stacking energy, while models of the underlying deformation mechan…
▽ More
Lattice reconstruction and corresponding strain accumulation play a key role in defining the electronic structure of two-dimensional moiré superlattices, including those of transition metal dichalcogenides (TMDs). Imaging of TMD moirés has so far provided a qualitative understanding of this relaxation process in terms of interlayer stacking energy, while models of the underlying deformation mechanisms have relied on simulations. Here, we use interferometric four-dimensional scanning transmission electron microscopy to quantitatively map the mechanical deformations through which reconstruction occurs in small-angle twisted bilayer MoS2 and WSe2/MoS2 heterobilayers. We provide direct evidence that local rotations govern relaxation for twisted homobilayers, while local dilations are prominent in heterobilayers possessing a sufficiently large lattice mismatch. Encapsulation of the moiré layers in hBN further localizes and enhances these in-plane reconstruction pathways, suppressing out-of-plane corrugation. We also find that extrinsic uniaxial heterostrain, which introduces a lattice constant difference in twisted homobilayers, leads to accumulation and redistribution of reconstruction strain, demonstrating another route to modify the moiré potential.
△ Less
Submitted 10 April, 2023; v1 submitted 13 December, 2022;
originally announced December 2022.
-
Hard ferromagnetism down to the thinnest limit of iron-intercalated tantalum disulfide
Authors:
Samra Husremović,
Katherine Inzani,
Catherine K. Groschner,
Isaac M. Craig,
Karen C. Bustillo,
Peter Ercius,
Nathanael P. Kazmierczak,
Jacob Syndikus,
Madeline Van Winkle,
Shaul Aloni,
Takashi Taniguchi,
Kenji Watanabe,
Sinéad M. Griffin,
D. Kwabena Bediako
Abstract:
Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak magnetocrystalline anisotropy results in typically soft f…
▽ More
Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak magnetocrystalline anisotropy results in typically soft ferromagnetism. Here, we demonstrate that ferromagnetic order persists down to the thinnest limit of Fe$_x$TaS$_2$ (Fe-intercalated bilayer 2H-TaS$_2$) with giant coercivities up to 3 tesla. We prepare Fe-intercalated TaS$_2$ by chemical intercalation of van der Waals layered 2H-TaS$_2$ crystals and perform variable-temperature quantum transport, transmission electron microscopy, and confocal Raman spectroscopy measurements to shed new light on the coupled effects of dimensionality, degree of intercalation, and intercalant order/disorder on the hard ferromagnetic behavior of Fe$_x$TaS$_2$. More generally, we show that chemical intercalation gives access to a rich synthetic parameter space for low-dimensional magnets, in which magnetic properties can be tailored by the choice of the host material and intercalant identity/amount, in addition to the manifold distinctive degrees of freedom available in atomically thin, van der Waals crystals.
△ Less
Submitted 25 July, 2022; v1 submitted 10 March, 2022;
originally announced March 2022.
-
Tunable electrochemistry with moiré flat bands and topological defects at twisted bilayer graphene
Authors:
Yun Yu,
Kaidi Zhang,
Holden Parks,
Mohammad Babar,
Stephen Carr,
Isaac M. Craig,
Madeline Van Winkle,
Artur Lyssenko,
Takashi Taniguchi,
Kenji Watanabe,
Venkatasubramanian Viswanathan,
D. Kwabena Bediako
Abstract:
Tailoring electron transfer dynamics across solid-liquid interfaces is fundamental to the interconversion of electrical and chemical energy. Stacking atomically thin layers with a very small azimuthal misorientation to produce moiré superlattices enables the controlled engineering of electronic band structures and the formation of extremely flat electronic bands. Here, we report a strong twist ang…
▽ More
Tailoring electron transfer dynamics across solid-liquid interfaces is fundamental to the interconversion of electrical and chemical energy. Stacking atomically thin layers with a very small azimuthal misorientation to produce moiré superlattices enables the controlled engineering of electronic band structures and the formation of extremely flat electronic bands. Here, we report a strong twist angle dependence of heterogeneous charge transfer kinetics at twisted bilayer graphene electrodes with the greatest enhancement observed near the 'magic angle' (~1.1 degrees). This effect is driven by the angle-dependent tuning of moiré-derived flat bands that modulate electron transfer processes with the solution-phase redox couple. Combined experimental and computational analysis reveals that the variation in electrochemical activity with moiré angle is controlled by atomic reconstruction of the moiré superlattice at twist angles <2 degrees, and topological defect AA stacking regions produce a large anomalous local electrochemical enhancement that cannot be accounted for by the elevated local density of states alone. Our results introduce moiré flat band materials as a distinctively tunable paradigm for mediating electrochemical transformations.
△ Less
Submitted 15 August, 2021;
originally announced August 2021.
-
Strain fields in twisted bilayer graphene
Authors:
Nathanael P. Kazmierczak,
Madeline Van Winkle,
Colin Ophus,
Karen C. Bustillo,
Hamish G. Brown,
Stephen Carr,
Jim Ciston,
Takashi Taniguchi,
Kenji Watanabe,
D. Kwabena Bediako
Abstract:
Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice periodicity as well as localized structural deformations that introduce disorder and strain. Here, we introduce Bragg interferometry, based on four-dimensional sc…
▽ More
Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice periodicity as well as localized structural deformations that introduce disorder and strain. Here, we introduce Bragg interferometry, based on four-dimensional scanning transmission electron microscopy, to capture atomic displacement fields in twisted bilayer graphene with twist angles < 2°. Nanoscale spatial fluctuations in twist angle and uniaxial heterostrain are statistically evaluated, revealing the prevalence of short-range disorder in this class of materials. By quantitatively map** strain tensor fields we uncover two distinct regimes of structural relaxation -- in contrast to previous models depicting a single continuous process -- and we disentangle the electronic contributions of the rotation modes that comprise this relaxation. Further, we find that applied heterostrain accumulates anisotropically in saddle point regions to generate distinctive striped shear strain phases. Our results thus establish the reconstruction mechanics underpinning the twist angle dependent electronic behaviour of twisted bilayer graphene, and provide a new framework for directly visualizing structural relaxation, disorder, and strain in any moiré material.
△ Less
Submitted 15 February, 2021; v1 submitted 22 August, 2020;
originally announced August 2020.
-
Engineering Phonon Polaritons in van der Waals Heterostructures to Enhance In-Plane Optical Anisotropy
Authors:
Kundan Chaudhary,
Michele Tamagnone,
Mehdi Rezaee,
D. Kwabena Bediako,
Antonio Ambrosio,
Philip Kim,
Federico Capasso
Abstract:
Van der Waals heterostructures assembled from layers of 2D materials have attracted considerable interest due to their novel optical and electrical properties. Here we report a scattering-type scanning near field optical microscopy study of hexagonal boron nitride on black phosphorous (h-BN/BP) heterostructures, demonstrating the first direct observation of in-plane anisotropic phonon polariton mo…
▽ More
Van der Waals heterostructures assembled from layers of 2D materials have attracted considerable interest due to their novel optical and electrical properties. Here we report a scattering-type scanning near field optical microscopy study of hexagonal boron nitride on black phosphorous (h-BN/BP) heterostructures, demonstrating the first direct observation of in-plane anisotropic phonon polariton modes in vdW heterostructures. Strikingly, the measured in-plane optical anisotropy along armchair and zigzag crystal axes exceeds the ratio of refractive indices of BP in the x-y plane. We explain that this enhancement is due to the high confinement of the phonon polaritons in h-BN. We observe a maximum in-plane optical anisotropy of α_max=1.25 in the 1405-1440 cm-1 frequency spectrum. These results provide new insights on the behavior of polaritons in vdW heterostructures, and the observed anisotropy enhancement paves the way to novel nanophotonic devices and to a new way to characterize optical anisotropy in thin films.
△ Less
Submitted 9 July, 2018;
originally announced July 2018.
-
Heterointerface effects in the electro-intercalation of van der Waals heterostructures
Authors:
D. Kwabena Bediako,
Mehdi Rezaee,
Hyobin Yoo,
Daniel T. Larson,
Shu Yang Frank Zhao,
Takashi Taniguchi,
Kenji Watanabe,
Tina L. Brower-Thomas,
Efthimios Kaxiras,
Philip Kim
Abstract:
Molecular-scale manipulation of electronic/ionic charge accumulation in materials is a preeminent challenge, particularly in electrochemical energy storage. Layered van der Waals (vdW) crystals exemplify a diverse family of materials that permit ions to reversibly associate with a host atomic lattice by intercalation into interlamellar gaps. Motivated principally by the search for high-capacity ba…
▽ More
Molecular-scale manipulation of electronic/ionic charge accumulation in materials is a preeminent challenge, particularly in electrochemical energy storage. Layered van der Waals (vdW) crystals exemplify a diverse family of materials that permit ions to reversibly associate with a host atomic lattice by intercalation into interlamellar gaps. Motivated principally by the search for high-capacity battery anodes, ion intercalation in composite materials is a subject of intense study. Yet the precise role and ability of heterolayers to modify intercalation reactions remains elusive. Previous studies of vdW hybrids represented ensemble measurements at macroscopic films/powders, which do not permit the isolation and investigation of the chemistry at individual 2-dimensional (2D) interfaces. Here, we demonstrate the intercalation of lithium at the level of individual atomic interfaces of dissimilar vdW layers. Electrochemical devices based on vdW heterostructures comprised of deterministically stacked hexagonal boron nitride, graphene (G) and molybdenum dichalcogenide (MoX2; X = S, Se) layers are fabricated, enabling the direct resolution of intermediate stages in the intercalation of discrete heterointerfaces and the extent of charge transfer to individual layers. Operando magnetoresistance and optical spectroscopy coupled with low-temperature quantum magneto-oscillation measurements show that the creation of intimate vdW heterointerfaces between G and MoX2 engenders over 10-fold accumulation of charge in MoX2 compared to MoX2/MoX2 homointerfaces, while enforcing a more negative intercalation potential than that of bulk MoX2 by at least 0.5 V. Beyond energy storage, our new combined experimental and computational methodology to manipulate and characterize the electrochemical behavior of layered systems opens up new pathways to control the charge density in 2D (opto)electronic devices.
△ Less
Submitted 26 March, 2018; v1 submitted 9 November, 2017;
originally announced November 2017.
-
Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures
Authors:
S. Y. Frank Zhao,
Giselle A. Elbaz,
D. Kwabena Bediako,
Cyndia Yu,
Dmitri K. Efetov,
Yinsheng Guo,
Jayakanth Ravichandran,
Kyung-Ah Min,
Suklyun Hong,
Takashi Taniguchi,
Kenji Watanabe,
Louis E. Brus,
Xavier Roy,
Philip Kim
Abstract:
Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electro-chemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostructures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic s…
▽ More
Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electro-chemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostructures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic surface side reactions while simultaneously creating a new hetero-interface that permits intercalation between the atomically thin layers. To monitor the electrochemical process, we employ the Hall effect to precisely monitor the intercalation reaction. We also simultaneously probe the spectroscopic and electrical transport properties of the resulting intercalation compounds at different stages of intercalation. We achieve the highest carrier density $> 5 \times 10^{13} cm^{-2}$ with mobility $> 10^3 cm^2/(Vs)$ in the most heavily intercalated samples, where Shubnikov-de Haas quantum oscillations are observed at low temperatures. These results set the stage for further studies that employ intercalation in modifying properties of vdW heterostructures.
△ Less
Submitted 21 October, 2017;
originally announced October 2017.
