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Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices
Authors:
Johannes Mohr,
Tyler Hennen,
Daniel Bedau,
Rainer Waser,
Dirk J. Wouters
Abstract:
The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and do** concentrations of 2%, 5% and 15%. A change in resistivity of nearly two orders of magnitude is found for 2% do**. A simulation model based on a scaling law description of the phase transition and percolative behavio…
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The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and do** concentrations of 2%, 5% and 15%. A change in resistivity of nearly two orders of magnitude is found for 2% do**. A simulation model based on a scaling law description of the phase transition and percolative behavior in a resistor lattice is developed. This is used to show that despite significant deviations in the film structure from single crystals, the transition behavior is very similar. Finally, the influence of the variability between grains on the characteristics of scaled devices is investigated and found to allow for scaling down to at least 50 nm device width.
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Submitted 13 May, 2024;
originally announced May 2024.
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A Compact Delay Model for OTS Devices
Authors:
M. M. Al Chawa,
R. Tetzlaff,
D. Bedau,
J. W. Reiner,
D. A. Stewart,
M. K. Grobis
Abstract:
This paper presents a novel compact delay model of Ovonic Threshold Switch (OTS) devices that works efficiently for circuit simulations. The internal state variable of the two terminal devices is estimated using a delay system that uses a few electrical components related to a suggested equivalent circuit of the device. Finally, we tested the proposed model against measured data from devices fabri…
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This paper presents a novel compact delay model of Ovonic Threshold Switch (OTS) devices that works efficiently for circuit simulations. The internal state variable of the two terminal devices is estimated using a delay system that uses a few electrical components related to a suggested equivalent circuit of the device. Finally, we tested the proposed model against measured data from devices fabricated by Western Digital Research.
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Submitted 12 May, 2024;
originally announced May 2024.
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Magnetization dynamics driven by displacement currents across a magnetic tunnel junction
Authors:
C. K. Safeer,
Paul S. Keatley,
Witold Skowroński,
Jakub Mojsiejuk,
Kay Yakushiji,
Akio Fukushima,
Shinji Yuasa,
Daniel Bedau,
Fèlix Casanova,
Luis E. Hueso,
Robert J. Hicken,
Daniele Pinna,
Gerrit van der Laan,
Thorsten Hesjedal
Abstract:
Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In…
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Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In our device operating at gigahertz frequencies, we find a large displacement current of the order of mA's, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high frequency magnetotransport techniques.
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Submitted 9 May, 2024;
originally announced May 2024.
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Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design
Authors:
Tyler Hennen,
Leon Brackmann,
Tobias Ziegler,
Sebastian Siegel,
Stephan Menzel,
Rainer Waser,
Dirk J. Wouters,
Daniel Bedau
Abstract:
We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By training on extensive measurement data of integrated 1T1R arrays (6,000 cycles of 512 devices), an autoregressive stochastic process accurately accounts for the cros…
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We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By training on extensive measurement data of integrated 1T1R arrays (6,000 cycles of 512 devices), an autoregressive stochastic process accurately accounts for the cross-correlations between the switching parameters, while non-linear transformations ensure agreement with both cycle-to-cycle (C2C) and device-to-device (D2D) variability. Benchmarks show that this statistically comprehensive model achieves read/write throughputs exceeding those of even highly simplified and deterministic compact models.
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Submitted 9 April, 2024;
originally announced April 2024.
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A Compact Model of Threshold Switching Devices for Efficient Circuit Simulations
Authors:
Mohamad Moner Al Chawa,
Daniel Bedau,
Ahmet S. Demirkol,
James W. Reiner,
Derek A. Stewart,
Michael K. Grobis,
Ronald Tetzlaff
Abstract:
In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a descriptive model was extracted and implemented in MATLAB, which is based on the macro model. This macro model was extended to develop a physical model that desc…
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In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a descriptive model was extracted and implemented in MATLAB, which is based on the macro model. This macro model was extended to develop a physical model that describes the processes that occur during the threshold switching. The physical model derived comprises a delay structure with few electrical components adjacent to the second junction. The delay model incorporates an internal state variable, which is crucial to transform the descriptive model into a compact model and to parameterize it in terms of electrical parameters that represent the component's behavior. Finally, we applied our model by fitting measured i-v data of an OTS device manufactured by Western Digital Research.
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Submitted 3 August, 2023;
originally announced August 2023.
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Fabrication of highly resistive NiO thin films for nanoelectronic applications
Authors:
Johannes Mohr,
Tyler Hennen,
Daniel Bedau,
Joyeeta Nag,
Rainer Waser,
Dirk J. Wouters
Abstract:
Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster anal…
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Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.
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Submitted 21 July, 2022;
originally announced July 2022.
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A High Throughput Generative Vector Autoregression Model for Stochastic Synapses
Authors:
T. Hennen,
A. Elias,
J. F. Nodin,
G. Molas,
R. Waser,
D. J. Wouters,
D. Bedau
Abstract:
By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as betwee…
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By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as between the different device parameters. We address this challenge with a high throughput generative model for synaptic arrays that is based on a recently available type of electrical measurement data for resistive memory cells. We map this real world data onto a vector autoregressive stochastic process to accurately reproduce the device parameters and their cross-correlation structure. While closely matching the measured data, our model is still very fast; we provide parallelized implementations for both CPUs and GPUs and demonstrate array sizes above one billion cells and throughputs exceeding one hundred million weight updates per second, above the pixel rate of a 30 frames/s 4K video stream.
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Submitted 10 May, 2022;
originally announced May 2022.
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Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance
Authors:
T. Hennen,
E. Wichmann,
R. Waser,
D. J. Wouters,
D. Bedau
Abstract:
Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the NDR effects exhibited, switching operations are strongly affected by the presence of resistance in series with the memory cell. Experimental measurements useful in the development of these devices use a…
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Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the NDR effects exhibited, switching operations are strongly affected by the presence of resistance in series with the memory cell. Experimental measurements useful in the development of these devices use a deliberate addition of series resistance, which can be done either by integrating resistors on-chip or by connecting external components to the wafer probing system. The former approach is considered inflexible because the resistance value attached to a given device cannot be changed or removed, while the latter approach tends to create parasitic effects that impact controllability and interfere with measurements. In this work we introduce a circuit design for flexible characterization of two-terminal nanodevices that provides a programmatically adjustable external series resistance while maintaining low parasitic capacitance. Experimental demonstrations are given that show the impact of the series resistance on NDR and resistive switching measurements.
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Submitted 30 November, 2021;
originally announced December 2021.
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Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
Authors:
D. Babich,
J. Tranchant,
C. Adda,
B. Corraze,
M. -P. Besland,
P. Warnicke,
D. Bedau,
P. Bertoncini,
J. -Y. Mevellec,
B. Humbert,
J. Rupp,
T. Hennen,
D. Wouters,
R. Llopis,
L. Cario,
E. Janod
Abstract:
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still…
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Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved μ-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics.
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Submitted 20 October, 2021; v1 submitted 11 May, 2021;
originally announced May 2021.
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Current-limiting amplifier for high speed measurement of resistive switching data
Authors:
T. Hennen,
E. Wichmann,
A. Elias,
J. Lille,
O. Mosendz,
R. Waser,
D. J. Wouters,
D. Bedau
Abstract:
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cell…
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Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cells are directly patterned on MOS transistors to limit the current, but this approach is very restrictive as the necessary integration limits the materials available as well as the fabrication cycle time. In this article we propose an external circuit to cycle resistive memory cells, capturing the full transfer curves while driving the cells in such a way to suppress runaway transitions. Using this circuit, we demonstrate the acquisition of $10^5$ I-V loops per second without the use of on-wafer current limiting transistors. This setup brings voltage swee** measurements to a relevant timescale for applications, and enables many new experimental possibilities for device evaluation in a statistical context.
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Submitted 10 February, 2021;
originally announced February 2021.
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Non-Volatile Memory Array Based Quantization- and Noise-Resilient LSTM Neural Networks
Authors:
Wen Ma,
Pi-Feng Chiu,
Won Ho Choi,
Minghai Qin,
Daniel Bedau,
Martin Lueker-Boden
Abstract:
In cloud and edge computing models, it is important that compute devices at the edge be as power efficient as possible. Long short-term memory (LSTM) neural networks have been widely used for natural language processing, time series prediction and many other sequential data tasks. Thus, for these applications there is increasing need for low-power accelerators for LSTM model inference at the edge.…
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In cloud and edge computing models, it is important that compute devices at the edge be as power efficient as possible. Long short-term memory (LSTM) neural networks have been widely used for natural language processing, time series prediction and many other sequential data tasks. Thus, for these applications there is increasing need for low-power accelerators for LSTM model inference at the edge. In order to reduce power dissipation due to data transfers within inference devices, there has been significant interest in accelerating vector-matrix multiplication (VMM) operations using non-volatile memory (NVM) weight arrays. In NVM array-based hardware, reduced bit-widths also significantly increases the power efficiency. In this paper, we focus on the application of quantization-aware training algorithm to LSTM models, and the benefits these models bring in terms of resilience against both quantization error and analog device noise. We have shown that only 4-bit NVM weights and 4-bit ADC/DACs are needed to produce equivalent LSTM network performance as floating-point baseline. Reasonable levels of ADC quantization noise and weight noise can be naturally tolerated within our NVMbased quantized LSTM network. Benchmark analysis of our proposed LSTM accelerator for inference has shown at least 2.4x better computing efficiency and 40x higher area efficiency than traditional digital approaches (GPU, FPGA, and ASIC). Some other novel approaches based on NVM promise to deliver higher computing efficiency (up to 4.7x) but require larger arrays with potential higher error rates.
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Submitted 24 February, 2020;
originally announced February 2020.
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Template-Assisted Direct Growth of 1Td/in$^2$ Bit Patterned Media
Authors:
En Yang,
Zuwei Liu,
Hitesh Arora,
Tsai-wei Wu,
Vipin Ayanoor-Vitikkate,
Detlef Spoddig,
Daniel Bedau,
Michael Grobis,
Bruce A. Gurney,
Thomas R. Albrecht,
Bruce Terris
Abstract:
We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer which contains Pt pillars separated by amorphous metal oxide. The scheme enables the creation of both templated data and servo regions suitable for high density hard disk drive oper…
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We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer which contains Pt pillars separated by amorphous metal oxide. The scheme enables the creation of both templated data and servo regions suitable for high density hard disk drive operation. We illustrate the importance of using a process that is both topographically and chemically driven to achieve high quality media.
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Submitted 16 June, 2016;
originally announced June 2016.
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Two-dimensional Decoding Algorithms and Recording Techniques for Bit Patterned Media Feasibility Demonstrations
Authors:
Yuri Obukhov,
Pierre-Olivier Jubert,
Daniel Bedau,
Michael Grobis
Abstract:
Recording experiments and decoding algorithms are presented for evaluating the bit-error-rate of state-of-the-art magnetic bitpatterned media. The recording experiments are performed with a static tester and conventional hard-disk-drive heads. As the reader dimensions are larger than the bit dimensions in both the down-track and the cross-track directions, a two-dimensional bit decoding algorithm…
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Recording experiments and decoding algorithms are presented for evaluating the bit-error-rate of state-of-the-art magnetic bitpatterned media. The recording experiments are performed with a static tester and conventional hard-disk-drive heads. As the reader dimensions are larger than the bit dimensions in both the down-track and the cross-track directions, a two-dimensional bit decoding algorithm is required. Two such algorithms are presented in details together with the methodology implemented to accurately retrieve island positions during recording. Using these techniques, a 1.6 Td/in$^2$ magnetic bit pattern media is demonstrated to support 2D bit error rates below 1e-2 under shingled magnetic recording conditions.
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Submitted 1 June, 2015;
originally announced June 2015.
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Bit Patterned Magnetic Recording: Theory, Media Fabrication, and Recording Performance
Authors:
Thomas R. Albrecht,
Hitesh Arora,
Vipin Ayanoor-Vitikkate,
Jean-Marc Beaujour,
Daniel Bedau,
David Berman,
Alexei L. Bogdanov,
Yves-Andre Chapuis,
Julia Cushen,
Elizabeth E. Dobisz,
Gregory Doerk,
He Gao,
Michael Grobis,
Bruce Gurney,
Weldon Hanson,
Olav Hellwig,
Toshiki Hirano,
Pierre-Olivier Jubert,
Dan Kercher,
Jeffrey Lille,
Zuwei Liu,
C. Mathew Mate,
Yuri Obukhov,
Kanaiyalal C. Patel,
Kurt Rubin
, et al. (6 additional authors not shown)
Abstract:
Bit Patterned Media (BPM) for magnetic recording provide a route to densities $>1 Tb/in^2$ and circumvents many of the challenges associated with conventional granular media technology. Instead of recording a bit on an ensemble of random grains, BPM uses an array of lithographically defined isolated magnetic islands, each of which stores one bit. Fabrication of BPM is viewed as the greatest challe…
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Bit Patterned Media (BPM) for magnetic recording provide a route to densities $>1 Tb/in^2$ and circumvents many of the challenges associated with conventional granular media technology. Instead of recording a bit on an ensemble of random grains, BPM uses an array of lithographically defined isolated magnetic islands, each of which stores one bit. Fabrication of BPM is viewed as the greatest challenge for its commercialization. In this article we describe a BPM fabrication method which combines e-beam lithography, directed self-assembly of block copolymers, self-aligned double patterning, nanoimprint lithography, and ion milling to generate BPM based on CoCrPt alloys. This combination of fabrication technologies achieves feature sizes of $<10 nm$, significantly smaller than what conventional semiconductor nanofabrication methods can achieve. In contrast to earlier work which used hexagonal close-packed arrays of round islands, our latest approach creates BPM with rectangular bitcells, which are advantageous for integration with existing hard disk drive technology. The advantages of rectangular bits are analyzed from a theoretical and modeling point of view, and system integration requirements such as servo patterns, implementation of write synchronization, and providing for a stable head-disk interface are addressed in the context of experimental results. Optimization of magnetic alloy materials for thermal stability, writeability, and switching field distribution is discussed, and a new method for growing BPM islands on a patterned template is presented. New recording results at $1.6 Td/in^2$ (teradot/inch${}^2$, roughly equivalent to $1.3 Tb/in^2$) demonstrate a raw error rate $<10^{-2}$, which is consistent with the recording system requirements of modern hard drives. Extendibility of BPM to higher densities, and its eventual combination with energy assisted recording are explored.
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Submitted 19 March, 2015;
originally announced March 2015.
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Spin-transfer assisted thermally activated switching distributions in perpendicularly magnetized spin valve nanopillars
Authors:
D. B. Gopman,
D. Bedau,
S. Mangin,
E. E. Fullerton,
J. A. Katine,
A. D. Kent
Abstract:
We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dep…
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We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally-induced switching model breaks down for currents exceeding the critical threshold.
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Submitted 6 December, 2013;
originally announced December 2013.
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Temperature dependent nucleation and propagation of domain walls in a sub-100 nm perpendicularly magnetized Co/Ni multilayer
Authors:
D. B. Gopman,
D. Bedau,
S. Mangin,
E. E. Fullerton,
J. A. Katine,
A. D. Kent
Abstract:
We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization con…
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We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization configurations. We propose a model that consists of domain nucleation, propagation and annihilation to explain the temperature dependence of the switching fields. Interestingly, low temperature (<30 K) step changes in resistance that we associate with domain nucleation, have a bimodal switching field and resistance step distribution, attributable to two competing nucleation pathways.
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Submitted 1 November, 2013;
originally announced November 2013.
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Bimodal switching field distributions in all-perpendicular spin-valve nanopillars
Authors:
Daniel B. Gopman,
Daniel Bedau,
Stéphane Mangin,
Eric E. Fullerton,
Jordan A. Katine,
Andrew D. Kent
Abstract:
Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to…
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Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.
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Submitted 17 September, 2013;
originally announced September 2013.
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Temperature dependence of the switching field distributions in all-perpendicular spin-valve nanopillars
Authors:
D. B. Gopman,
D. Bedau,
G. Wolf,
S. Mangin,
E. E. Fullerton,
J. A. Katine,
A. D. Kent
Abstract:
We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (mean switching field and…
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We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (mean switching field and switching variance) from 20 K up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model thats fit the experimental data in which we take a $T^{3/2}$ dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.
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Submitted 9 July, 2013;
originally announced July 2013.
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Thermally assisted current-induced magnetization reversal in SrRuO3
Authors:
Yishai Shperber,
Omer Sinwani,
Netanel Naftalis,
Daniel Bedau,
James W. Reiner,
Lior Klein
Abstract:
We inject a sequence of 1 ms current pulses into uniformly magnetized patterns of the itinerant ferromagnet SrRuO3 until a magnetization reversal is detected. We detect the effective temperature during the pulse and find that the cumulative pulse time required to induce magnetization reversal depends exponentially on 1/T. In addition, we find that the cumulative pulse time also depends exponential…
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We inject a sequence of 1 ms current pulses into uniformly magnetized patterns of the itinerant ferromagnet SrRuO3 until a magnetization reversal is detected. We detect the effective temperature during the pulse and find that the cumulative pulse time required to induce magnetization reversal depends exponentially on 1/T. In addition, we find that the cumulative pulse time also depends exponentially on the current amplitude. These observations indicate current-induced magnetization reversal assisted by thermal fluctuations.
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Submitted 28 March, 2013;
originally announced March 2013.
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Current-induced magnetization reversal in SrRuO3
Authors:
Yishai Shperber,
Daniel Bedau,
James W. Reiner,
Lior Klein
Abstract:
We inject current pulses into uniformly magnetized patterns of thin films of the itinerant ferromagnet SrRuO3, while monitoring the effective temperature of the patterns during the current injection. We gradually increase the amplitude of the pulses until magnetization reversal occurs. We observe magnetization reversal induced by current above a temperature-dependent threshold and show that this e…
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We inject current pulses into uniformly magnetized patterns of thin films of the itinerant ferromagnet SrRuO3, while monitoring the effective temperature of the patterns during the current injection. We gradually increase the amplitude of the pulses until magnetization reversal occurs. We observe magnetization reversal induced by current above a temperature-dependent threshold and show that this effect is not simply due to sample heating or Oersted fields. We discuss the applicability of the current-induced spin-wave instability scenario.
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Submitted 6 August, 2012;
originally announced August 2012.
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Time-Resolved Magnetic Relaxation of a Nanomagnet on Subnanosecond Time Scales
Authors:
H. Liu,
D. Bedau,
J. Z. Sun,
S. Mangin,
E. E. Fullerton,
J. A. Katine,
A. D. Kent
Abstract:
We present a two-current-pulse temporal correlation experiment to study the intrinsic subnanosecond nonequilibrium magnetic dynamics of a nanomagnet during and following a pulse excitation. This method is applied to a model spin-transfer system, a spin valve nanopillar with perpendicular magnetic anisotropy. Two-pulses separated by a short delay (< 500 ps) are shown to lead to the same switching p…
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We present a two-current-pulse temporal correlation experiment to study the intrinsic subnanosecond nonequilibrium magnetic dynamics of a nanomagnet during and following a pulse excitation. This method is applied to a model spin-transfer system, a spin valve nanopillar with perpendicular magnetic anisotropy. Two-pulses separated by a short delay (< 500 ps) are shown to lead to the same switching probability as a single pulse with a duration that depends on the delay. This demonstrates a remarkable symmetry between magnetic excitation and relaxation and provides a direct measurement of the magnetic relaxation time. The results are consistent with a simple finite temperature Fokker-Planck macrospin model of the dynamics, suggesting more coherent magnetization dynamics in this short time nonequilibrium limit than near equilibrium.
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Submitted 31 May, 2012;
originally announced May 2012.
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Audio Cards for High-Resolution and Economical Electronic Transport Studies
Authors:
Daniel B. Gopman,
Daniel Bedau,
Andrew D. Kent
Abstract:
We report on a technique for determining electronic transport properties using commercially available audio cards. Using a typical 24-bit audio card simultaneously as a sine wave generator and a narrow bandwidth ac voltmeter, we show the spectral purity of the analog-to-digital and digital-to-analog conversion stages, including an effective number of bits greater than 16 and dynamic range better t…
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We report on a technique for determining electronic transport properties using commercially available audio cards. Using a typical 24-bit audio card simultaneously as a sine wave generator and a narrow bandwidth ac voltmeter, we show the spectral purity of the analog-to-digital and digital-to-analog conversion stages, including an effective number of bits greater than 16 and dynamic range better than 110 dB. We present two circuits for transport studies using audio cards: a basic circuit using the analog input to sense the voltage generated across a device due to the signal generated simultaneously by the analog output; and a digitally-compensated bridge to compensate for nonlinear behavior of low impedance devices. The basic circuit also functions as a high performance digital lock-in amplifier. We demonstrate the application of an audio card for studying the transport properties of spin-valve nanopillars, a two-terminal device that exhibits Giant Magnetoresistance (GMR) and whose nominal impedance can be switched between two levels by applied magnetic fields and by currents applied by the audio card.
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Submitted 24 February, 2012;
originally announced February 2012.
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Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field
Authors:
Daniel B. Gopman,
Daniel Bedau,
Stephane Mangin,
C. H. Lambert,
Eric E. Fullerton,
Jordan A. Katine,
Andrew D. Kent
Abstract:
We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field…
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We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field from the polarizer is demonstrated to be at the origin of this symmetry breaking. Interestingly, the symmetry is restored for devices with a lithographically defined notch pair removed from the midpoint of the pillar cross-section along the ellipse long axis. These results have important implications for the thermal stability of perpendicular magnetized MRAM bit cells.
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Submitted 5 November, 2011;
originally announced November 2011.
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Spin-transfer pulse switching: From the dynamic to the thermally activated regime
Authors:
D. Bedau,
H. Liu,
J. Z. Sun,
J. A. Katine,
E. E. Fullerton,
S. Mangin,
A. D. Kent
Abstract:
The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration…
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The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration regime, in which reversal occurs by spin-transfer assisted thermal activation over an energy barrier, and a short time large pulse amplitude regime, in which the switching probability is determined by the spin angular momentum in the current pulse.
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Submitted 27 September, 2010;
originally announced September 2010.
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Stability of 2pi domain walls in ferromagnetic nanorings
Authors:
Gabriel David Chaves-O'Flynn,
Daniel Bedau,
Eric Vanden-Eijnden,
Andrew D. Kent,
Daniel L. Stein
Abstract:
The stability of 2pi domain walls in ferromagnetic nanorings is investigated via calculation of the minimum energy path that separates a 2pi domain wall from the vortex state of a ferromagnetic nanoring. Trapped domains are stable when they exist between certain types of transverse domain walls, i.e., walls in which the edge defects on the same side of the magnetic strip have equal sign and thus r…
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The stability of 2pi domain walls in ferromagnetic nanorings is investigated via calculation of the minimum energy path that separates a 2pi domain wall from the vortex state of a ferromagnetic nanoring. Trapped domains are stable when they exist between certain types of transverse domain walls, i.e., walls in which the edge defects on the same side of the magnetic strip have equal sign and thus repel. Here the energy barriers between these configurations and vortex magnetization states are obtained using the string method. Due to the geometry of a ring, two types of 2pi walls must be distinguished that differ by their overall topological index and exchange energy. The minimum energy path corresponds to the expulsion of a vortex. The energy barrier for annihilation of a 2pi wall is compared to the activation energy for transitions between the two ring vortex states.
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Submitted 8 March, 2010;
originally announced March 2010.
