Showing 1–8 of 8 results for author: Beckert, S

Detecting slow magnetization relaxation via magnetotransport measurements based on the current-reversal method

Authors: Sebastian Beckert, Richard Schlitz, Gregor Skob**, Antonin Badura, Miina Leiviskä, Dominik Kriegner, Daniel Scheffler, Giacomo Sala, Kamil Olejník, Lisa Michez, Vincent Baltz, Andy Thomas, Helena Reichlová, Sebastian T. B. Goennenwein

Abstract: Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model sy… ▽ More Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in τ -MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particulary sensitive to relaxation processes with relaxation time scales on the order of seconds, comparable to the current-reversal measurement time scales. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films

Authors: Miina Leiviskä, Javier Rial, Antonín Badura, Rafael Lopes Seeger, Ismaïla Kounta, Sebastian Beckert, Dominik Kriegner, Isabelle Joumard, Eva Schmoranzerová, Jairo Sinova, Olena Gomonay, Andy Thomas, Sebastian T. B. Goennenwein, Helena Reichlová, Libor Šmejkal, Lisa Michez, Tomáš Jungwirth, Vincent Baltz

Abstract: Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rota… ▽ More Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative Néel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the Néel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material. △ Less

Submitted 4 January, 2024; originally announced January 2024.

Even-in-magnetic-field part of transverse resistivity as a probe of magnetic order

Authors: Antonin Badura, Dominik Kriegner, Eva Schmoranzerová, Karel Výborný, Miina Leiviskä, Rafael Lopes Seeger, Vincent Baltz, Daniel Scheffler, Sebastian Beckert, Ismaila Kounta, Lisa Michez, Libor Šmejkal, Jairo Sinova, Sebastian T. B. Goennenwein, Jakub Železný, Helena Reichlová

Abstract: The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effec… ▽ More The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is typically ascribed to experimental artefacts and ignored. We here show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner-Wohlfarth modelling. We then apply our approach to magnetotransport measurements in $\rm Mn_5Si_3$ thin films with a complex compensated magnetic order. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$ K and thus offers a simple and readily available probe of the magnetic order. △ Less

Submitted 24 November, 2023; originally announced November 2023.

Comments: 18 pages, 5 figures

Anomalous Nernst effect in perpendicularly magnetised τ-MnAl thin films

Authors: Daniel Scheffler, Sebastian Beckert, Helena Reichlova, Thomas G. Woodcock, Sebastian T. B. Goennenwein, Andy Thomas

Abstract: $τ$-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here we report on the anomalous Nernst effect of sputter deposited $τ… ▽ More $τ$-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here we report on the anomalous Nernst effect of sputter deposited $τ$-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 K and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetisation of the material. The anomalous Nernst coefficient of (0.6$\pm$0.24) $μ$V/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore $τ$-MnAl is a promising candidate for spin-caloritronic research. △ Less

Submitted 7 July, 2023; originally announced July 2023.

Probing magnetic properties at the nanoscale: In-situ Hall measurements in a TEM

Authors: Darius Pohl, Ye** Lee, Dominik Kriegner, Sebastian Beckert, Sebastian Schneider, Bernd Rellinghaus, Andy Thomas

Abstract: We report on advanced in-situ magneto-transport measurements in a transmission electron microscope. The approach allows for concurrent magnetic imaging and high resolution structural and chemical characterization of the same sample. Proof-of-principle in-situ Hall measurements on presumably undemanding nickel thin films supported by micromagnetic simulations reveal that in samples with non-trivial… ▽ More We report on advanced in-situ magneto-transport measurements in a transmission electron microscope. The approach allows for concurrent magnetic imaging and high resolution structural and chemical characterization of the same sample. Proof-of-principle in-situ Hall measurements on presumably undemanding nickel thin films supported by micromagnetic simulations reveal that in samples with non-trivial structures and/or compositions, detailed knowledge of the latter is indispensable for a thorough understanding and reliable interpretation of the magneto-transport data. The proposed in-situ approach is thus expected to contribute to a better understanding of the Hall signatures in more complex magnetic textures. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Anomalous Nernst effect in Mn$_3$NiN thin films

Authors: Sebastian Beckert, João Godinho, Freya Johnson, Jozef Kimák, Eva Schmoranzerová, Jan Zemen, Zbyněk Šobáň, Kamil Olejník, Jakub Železný, Joerg Wunderlich, Petr Němec, Dominik Kriegner, Andy Thomas, Sebastian T. B. Goennenwein, Lesley F Cohen, Helena Reichlová

Abstract: The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect… ▽ More The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Identifying the octupole Antiferromagnetic domain orientation in Mn$_{3}$NiN by scanning Anomalous Nernst Effect microscopy

Authors: F. Johnson, J. Kimák, J. Zemen, Z. Šobáň, E. Schmoranzerová, J. Godinho, P. Němec, S. Beckert, H. Reichlová, D. Boldrin, J. Wunderlich, L. F. Cohen

Abstract: The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directio… ▽ More The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directions. The sign of each component of the anomalous Nernst effect is determined by the local antiferromagnetic domain state. In this work, a temperature gradient is induced in a 50 nm thick Mn$_{3}$NiN two micron-size Hall cross by a focused scanning laser beam, and the spatial distribution of the anomalous Nernst voltage is used to image and identify the octupole macrodomain arrangement. Although the focused laser beam width may span many individual domains, cooling from room temperature through the antiferromagnetic transition temperature in an in-plane magnetic field prepares the domain state producing a checkerboard pattern resulting from the convolution of contributions from each domain. These images together with atomistic and micromagnetic simulations suggest an average macrodomain of the order of $1 μm^{2}$. △ Less

Submitted 24 May, 2022; originally announced May 2022.

Comments: 25 pages 4 figures, 6 supplementary figures F.J. and J.K. both contributed equally to this manuscript. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://aip.scitation.org/journal/apl

Large anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa

Authors: Helena Reichlova, Richard Schlitz, Sebastian Beckert, Peter Swekis, Anastasios Markou, Yi-Cheng Chen, Savio Fabretti, Gyu Hyeon Park, Anna Niemann, Shashank Sudheendra, Andy Thomas, Kornelius Nielsch, Claudia Felser, Sebastian T. B. Goennenwein

Abstract: The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip the… ▽ More The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$μ$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices. △ Less

Submitted 17 July, 2018; originally announced July 2018.