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Valley properties of doped graphene in a magnetic field
Authors:
Juan Sebastian Ardenghi,
Pablo Bechthold,
Estela Gonzalez,
Paula Jasen,
Alfredo Juan
Abstract:
The aim of this work is to describe the electronic properties of graphene in a constant magnetic field in the long wavelength approximation with random binary disorder, by solving the Soven equation self-consistently. Density of state contributions for different valleys in each sublattice sites are obtained for different values of magnetic field strength showing remarkable differences between K an…
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The aim of this work is to describe the electronic properties of graphene in a constant magnetic field in the long wavelength approximation with random binary disorder, by solving the Soven equation self-consistently. Density of state contributions for different valleys in each sublattice sites are obtained for different values of magnetic field strength showing remarkable differences between K and K' valleys. A band gap is obtained by an asymmetric on-site impurity concentration and the graphene electrons acquire an anomalous magnetic moment, which is opposite in different valleys, which depend highly in the interplay between the impurity band, the band edges and the broadening of the Landau levels. In turn, magnetization as a function of B for different on-site random impurities is computed showing that by decreasing the on-site impurity energy values, maximum magnetization is shifted towards higher values of B which can be used to create and manipulate polarized valley currents. Finally, conductivity and local vertex function are obtained as a function of energy showing that scattering contributions from A and B sublattices differ significantly. Effective medium local two-irreducible vertex is computed showing that scattering from sublattices A and B do not contribute equally, which can be related to weak anti-localization. From these results, it could be possible to explore how the valley pseudospin can be used to create polarized currents by populating asymmetrically the sublattice sites, where the population can be tuned with the applied magnetic field strength.
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Submitted 13 February, 2015;
originally announced March 2015.
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Dynamical diffusion and renormalization group equation for the Fermi velocity in doped graphene
Authors:
Juan Sebastian Ardenghi,
Pablo Bechthold,
Paula Jasen,
Estela Gonzalez,
Alfredo Juan
Abstract:
The aim of this work is to study the electron transport in graphene with impurities by introducing a generalization of linear response theory for linear dispersion relations and spinor wave functions. Current response and density response functions are derived and computed in the Boltzmann limit, showing that in the former case, a minimum conductivity appears in the no-disorder limit. In turn, fro…
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The aim of this work is to study the electron transport in graphene with impurities by introducing a generalization of linear response theory for linear dispersion relations and spinor wave functions. Current response and density response functions are derived and computed in the Boltzmann limit, showing that in the former case, a minimum conductivity appears in the no-disorder limit. In turn, from the generalization of both functions, an exact relation can be obtained that relates both. Combining this result with the relation given by the continuity equation, it is possible to obtain general functional behavior of the diffusion pole. Finally, a dynamical diffusion is computed in the quasistatic limit using the definition of relaxation function. A lower cutoff must be introduced to regularize infrared divergences, which allow us to obtain a full renormalization group equation for the Fermi velocity, which is solved up to order O(h^2).
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Submitted 24 July, 2014;
originally announced July 2014.
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Ballistic transport properties in pristine-doped-pristine graphene junctions
Authors:
Juan Sebastian Ardenghi,
Pablo Bechthold,
Estela Gonzalez,
Paula Jasen,
Alfredo Juan
Abstract:
We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the concentration of impurities and the incident energy. In turn, the conductance computed using the Landauer formalism shows a similar behavior to those found in experimental…
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We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the concentration of impurities and the incident energy. In turn, the conductance computed using the Landauer formalism shows a similar behavior to those found in experimental works as a function of the applied voltage for different concentrations of impurities in the limit of low temperatures. In the limit of zero bias voltage, the conductance shows a minimum value which reduces to zero for high concentration of impurities which disentangle graphene sublattices. These results can be very helpful for exploring the tunneling mechanism of electrons through doped thermodynamically stable graphene.
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Submitted 27 May, 2014;
originally announced May 2014.
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Statistical repulsion/attraction of electrons in graphene in a magnetic field
Authors:
Juan Sebastian Ardenghi,
Pablo Bechthold,
Estela Gonzalez,
Paula Jasen,
Alfredo Juan
Abstract:
The aim of this work is to describe the thermodynamic properties of an electron gas in graphene placed in a constant magnetic field. The electron gas is constituted by $N$ Bloch electrons in the long wavelength approximation. The partition function is analyzed in terms of a perturbation expansion of the dimensionless constant $(\sqrt{eB}L)^{-1}$. The statistical repulsion/attraction potential for…
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The aim of this work is to describe the thermodynamic properties of an electron gas in graphene placed in a constant magnetic field. The electron gas is constituted by $N$ Bloch electrons in the long wavelength approximation. The partition function is analyzed in terms of a perturbation expansion of the dimensionless constant $(\sqrt{eB}L)^{-1}$. The statistical repulsion/attraction potential for electrons in graphene is obtained in the respective case in which antisymmetric/symmetric states in the coordinates are chosen. Thermodynamic functions are computed for different orders in the perturbation expansion and the different contributions are compared for symmetric and antisymmetric states, showing remarkable differences between them due to the spin exchange correlation. A detailed analysis of the statistical potential is done, showing that, although electrons satisfy Fermi statistics, attractive potential at some interparticle distances can be found.
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Submitted 26 October, 2013;
originally announced October 2013.
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Landau level transitions indoped graphene in a time dependent magnetic field
Authors:
Juan Sebastián Ardenghi,
Pablo Bechthold,
Paula Jasen,
Estela Gonzalez,
Oscar Nagel
Abstract:
The aim of this work is to describe the Landau levels transitions of Bloch electrons in doped graphene with an arbitrary time dependent magnetic field in the long wavelength approximation. In particular, transitions from the m Landau level to the m + 1 and m + 2 Landau levels are studied using time-dependent perturbation theory. Time intervals are computed in which transition probabilities tend to…
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The aim of this work is to describe the Landau levels transitions of Bloch electrons in doped graphene with an arbitrary time dependent magnetic field in the long wavelength approximation. In particular, transitions from the m Landau level to the m + 1 and m + 2 Landau levels are studied using time-dependent perturbation theory. Time intervals are computed in which transition probabilities tend to zero at low order in the coupling constant. In particular, Landau level transitions are studied in the case of Bloch electrons travelling in the direction of the applied magnetic force and the results are compared with classical and revival periods of electrical current in graphene. Finally, current probabilities are computed for the n = 0 and n = 1 Landau levels showing expected oscillating behavior with modified cyclotron frequency.
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Submitted 30 July, 2013;
originally announced July 2013.
