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Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
Authors:
Jonathan Körber,
Jonah Heiler,
Philipp Fuchs,
Philipp Flad,
Erik Hesselmeier,
Pierre Kuna,
Jawad Ul-Hassan,
Wolfgang Knolle,
Christoph Becher,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based opt…
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Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of 34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption linewidth below 80MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.
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Submitted 1 July, 2024; v1 submitted 12 June, 2024;
originally announced June 2024.
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High fidelity distribution of triggered polarization-entangled telecom photons via a 36km intra-city fiber network
Authors:
Tim Strobel,
Stefan Kazmaier,
Tobias Bauer,
Marlon Schäfer,
Ankita Choudhary,
Nand Lal Sharma,
Raphael Joos,
Cornelius Nawrath,
Jonas H. Weber,
Weijie Nie,
Ghata Bhayani,
Lukas Wagner,
André Bisquerra,
Marc Geitz,
Ralf-Peter Braun,
Caspar Hopfmann,
Simone L. Portalupi,
Christoph Becher,
Peter Michler
Abstract:
Fiber-based distribution of triggered, entangled, single-photon pairs is a key requirement for the future development of terrestrial quantum networks. In this context, semiconductor quantum dots (QDs) are promising candidates for deterministic sources of on-demand polarization-entangled photon pairs. So far, the best QD polarization-entangled-pair sources emit in the near-infrared wavelength regim…
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Fiber-based distribution of triggered, entangled, single-photon pairs is a key requirement for the future development of terrestrial quantum networks. In this context, semiconductor quantum dots (QDs) are promising candidates for deterministic sources of on-demand polarization-entangled photon pairs. So far, the best QD polarization-entangled-pair sources emit in the near-infrared wavelength regime, where the transmission distance in deployed fibers is limited. Here, to be compatible with existing fiber network infrastructures, bi-directional polarization-conserving quantum frequency conversion (QFC) is employed to convert the QD emission from \unit[780]{nm} to telecom wavelengths. We show the preservation of polarization entanglement after QFC (fidelity to Bell state $F_{φ^+, conv}=0.972\pm0.003$) of the biexciton transition. As a step towards real-world applicability, high entanglement fidelities ($F_{φ^+, loop}=0.945\pm0.005$) after the propagation of one photon of the entangled pair along a \unit[35.8]{km} field installed standard single mode fiber link are reported. Furthermore, we successfully demonstrate a second polarization-conversing QFC step back to \unit[780]{nm} preserving entanglement ($F_{φ^+, back}=0.903\pm0.005$). This further prepares the way for interfacing quantum light to various quantum memories.
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Submitted 27 May, 2024; v1 submitted 23 May, 2024;
originally announced May 2024.
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Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide
Authors:
Y. Abdedou,
A. Fuchs,
P. Fuchs,
D. Herrmann,
S. Weber,
M. Schäfer,
J. L'huillier,
C. Becher,
E. Neu
Abstract:
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature do** and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers), it is an excellent material for optical resonators due to its high refractive index and an outstanding material for mechanical resonators due to its high Q/f product. Moreover, epitaxial grap…
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Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature do** and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers), it is an excellent material for optical resonators due to its high refractive index and an outstanding material for mechanical resonators due to its high Q/f product. Moreover, epitaxial graphene layers can be grown as ultrathin electrodes and provide the potential to fine-tune color center resonances. These characteristics render SiC an ideal platform for experiments with single color centers towards quantum technologies including coupling color centers towards cooperative effects. A crucial step towards harnessing the full potential of the SiC platform includes technologies to create color centers with defined localization and density, e.g.\ to facilitate their coupling to nano-photonic structures and to observe cooperative effects. Here, silicon vacancy centers (V$_{Si}$) stand out as no impurity atom is needed and high-thermal budget annealing steps can be avoided. We characterize the effect of localized, femtosecond laser irradiation of SiC, investigating surface modifications and photoluminescence including Raman spectroscopy and optical lifetime measurements.
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Submitted 15 April, 2024;
originally announced April 2024.
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Demonstration of quantum network protocols over a 14-km urban fiber link
Authors:
Stephan Kucera,
Christian Haen,
Elena Arenskötter,
Tobias Bauer,
Jonas Meiers,
Marlon Schäfer,
Ross Boland,
Milad Yahyapour,
Maurice Lessing,
Ronald Holzwarth,
Christoph Becher,
Jürgen Eschner
Abstract:
We report on the implementation of quantum entanglement distribution and quantum state teleportation over a 14.4-km urban dark-fiber link, which is partially underground, partially overhead, and patched in several stations. We characterize the link for its use as a quantum channel and realize its active polarization stabilization. Using a type-II cavity-enhanced SPDC photon pair source, a $^{40}$C…
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We report on the implementation of quantum entanglement distribution and quantum state teleportation over a 14.4-km urban dark-fiber link, which is partially underground, partially overhead, and patched in several stations. We characterize the link for its use as a quantum channel and realize its active polarization stabilization. Using a type-II cavity-enhanced SPDC photon pair source, a $^{40}$Ca$^{+}$ single-ion quantum memory, and quantum frequency conversion to the telecom C-band, we demonstrate photon-photon entanglement, ion-photon entanglement, and teleportation of a qubit state from the ion onto a remote telecom photon, all realized over the urban fiber link.
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Submitted 7 April, 2024;
originally announced April 2024.
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Microwave Control of the Tin-Vacancy Spin Qubit in Diamond with a Superconducting Waveguide
Authors:
Ioannis Karapatzakis,
Jeremias Resch,
Marcel Schrodin,
Philipp Fuchs,
Michael Kieschnick,
Julia Heupel,
Luis Kussi,
Christoph Sürgers,
Cyril Popov,
Jan Meijer,
Christoph Becher,
Wolfgang Wernsdorfer,
David Hunger
Abstract:
Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin contr…
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Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin control are suppressed, and strain is necessary to enable these transitions. Recent work has shown spin control of strained emitters using microwave lines that suffer from Ohmic losses, restricting coherence through heating. We utilize a superconducting coplanar waveguide to measure SnV centers subjected to strain, observing substantial improvement. A detailed analysis of the SnV center electron spin Hamiltonian based on the angle-dependent splitting of the ground and excited states is performed. We demonstrate coherent spin manipulation and obtain a Hahn echo coherence time of up to $T_2 = 430\,μ$s. With dynamical decoupling, we can prolong coherence to $T_2 = 10\,$ms, about six-fold improved compared to earlier works. We also observe a nearby coupling $^{13}\mathrm{C}$ spin which may serve as a quantum memory. This substantiates the potential of SnV centers in diamond and demonstrates the benefit of superconducting microwave structures.
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Submitted 1 March, 2024;
originally announced March 2024.
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Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Authors:
Jonah Heiler,
Jonathan Körber,
Erik Hesselmeier,
Pierre Kuna,
Rainer Stöhr,
Philipp Fuchs,
Misagh Ghezellou,
Jawad Ul-Hassan,
Wolfgang Knolle,
Christoph Becher,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thi…
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Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to $0.25\,\rmμm$. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of $3-4\,\rmÅ$, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of $0.7 \,\rmμm$. For silicon vacancy centres in thinner membranes down to $0.25\,\rmμm$, we observe spectral wandering, however, optical linewidths remain below $200\,\rm MHz$, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring.
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Submitted 13 May, 2024; v1 submitted 19 October, 2023;
originally announced October 2023.
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Long-lived quantum memory enabling atom-photon entanglement over 101 km telecom fiber
Authors:
Yiru Zhou,
Pooja Malik,
Florian Fertig,
Matthias Bock,
Tobias Bauer,
Tim van Leent,
Wei Zhang,
Christoph Becher,
Harald Weinfurter
Abstract:
Long-distance entanglement distribution is the key task for quantum networks, enabling applications such as secure communication and distributed quantum computing. Here we report on novel developments extending the reach for sharing entanglement between a single $^{87}$Rb atom and a single photon over long optical fibers. To maintain a high fidelity during the long flight times through such fibers…
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Long-distance entanglement distribution is the key task for quantum networks, enabling applications such as secure communication and distributed quantum computing. Here we report on novel developments extending the reach for sharing entanglement between a single $^{87}$Rb atom and a single photon over long optical fibers. To maintain a high fidelity during the long flight times through such fibers, the coherence time of the single atom is prolonged to 7 ms by applying a long-lived qubit encoding. In addition, the attenuation in the fibers is minimized by converting the photon's wavelength to the telecom S-Band via polarization-preserving quantum frequency conversion. This enables to observe entanglement between the atomic quantum memory and the emitted photon after passing 101 km of optical fiber with a fidelity better than 70.8$\pm$2.4%. The fidelity, however, is no longer reduced due to loss of coherence of the atom or photon but in the current setup rather due to detector dark counts, showing the suitability of our platform to realize city-to-city scale quantum network links.
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Submitted 21 August, 2023; v1 submitted 17 August, 2023;
originally announced August 2023.
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Two-stage, low noise quantum frequency conversion of single photons from silicon-vacancy centers in diamond to the telecom C-band
Authors:
Marlon Schäfer,
Benjamin Kambs,
Dennis Herrmann,
Tobias Bauer,
Christoph Becher
Abstract:
The silicon-vacancy center in diamond holds great promise as a qubit for quantum communication networks. However, since the optical transitions are located within the visible red spectral region, quantum frequency conversion to low-loss telecommunication wavelengths becomes a necessity for its use in long-range, fiber-linked networks. This work presents a highly efficient, low-noise quantum freque…
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The silicon-vacancy center in diamond holds great promise as a qubit for quantum communication networks. However, since the optical transitions are located within the visible red spectral region, quantum frequency conversion to low-loss telecommunication wavelengths becomes a necessity for its use in long-range, fiber-linked networks. This work presents a highly efficient, low-noise quantum frequency conversion device for photons emitted by a silicon-vacancy (SiV) center in diamond to the telecom C-band. By using a two-stage difference-frequency mixing scheme SPDC noise is circumvented and Raman noise is minimized, resulting in a very low noise rate of $10.4 \pm 0.7$ photons per second as well as an overall device efficiency of $35.6\, \%$. By converting single photons from SiV centers we demonstrate the preservation of photon statistics upon conversion.
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Submitted 21 July, 2023;
originally announced July 2023.
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Calibration-Independent Certification of a Quantum Frequency Converter
Authors:
Matthias Bock,
Pavel Sekatski,
Jean-Daniel Bancal,
Stephan Kucera,
Tobias Bauer,
Nicolas Sangouard,
Christoph Becher,
Jürgen Eschner
Abstract:
We report on a method to certify a unitary operation with the help of source and measurement apparatuses whose calibration throughout the certification process needs not be trusted. As in the device-independent paradigm our certification method relies on a Bell test, but it removes the need for high detection efficiencies by including the single additional assumption that non-detected events are i…
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We report on a method to certify a unitary operation with the help of source and measurement apparatuses whose calibration throughout the certification process needs not be trusted. As in the device-independent paradigm our certification method relies on a Bell test, but it removes the need for high detection efficiencies by including the single additional assumption that non-detected events are independent of the measurement settings. The relevance of the proposed method is demonstrated experimentally with the certification of a quantum frequency converter. The experiment starts with the heralded creation of a maximally entangled two-qubit state between a single $^{40}$Ca$^+$ ion and a 854$\,$nm photon. Entanglement preserving frequency conversion to the telecom band is then realized with a non-linear waveguide embedded in a Sagnac interferometer. The resulting ion-telecom photon entangled state is characterized by means of a Bell-CHSH test from which the quality of the frequency conversion is quantified. We demonstrate the successful frequency conversion with an average certified fidelity of $\geq 84\,\%$ and an efficiency $\geq 3.1\times 10^{-6}$ at a confidence level of $99\,\%$. This ensures the suitability of the converter for integration in quantum networks from a trustful characterization procedure.
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Submitted 20 April, 2023; v1 submitted 19 April, 2023;
originally announced April 2023.
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Telecom Quantum Photonic Interface for a $^{40}$Ca$^+$ Single-Ion Quantum Memory
Authors:
Elena Arenskötter,
Tobias Bauer,
Stephan Kucera,
Matthias Bock,
Jürgen Eschner,
Christoph Becher
Abstract:
Entanglement-based quantum networks require quantum photonic interfaces between stationary quantum memories and photons, enabling entanglement distribution. Here we present such a photonic interface, designed for connecting a $^{40}$Ca$^+$ single-ion quantum memory to the telecom C-band. The interface combines a memory-resonant, cavity-enhanced spontaneous parametric down-conversion (SPDC) photon…
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Entanglement-based quantum networks require quantum photonic interfaces between stationary quantum memories and photons, enabling entanglement distribution. Here we present such a photonic interface, designed for connecting a $^{40}$Ca$^+$ single-ion quantum memory to the telecom C-band. The interface combines a memory-resonant, cavity-enhanced spontaneous parametric down-conversion (SPDC) photon pair source with bi-directional polarization-conserving quantum frequency conversion (QFC). We demonstrate preservation of high-fidelity entanglement during conversion, fiber transmission over up to 40 km and back-conversion to the memory wavelength. Even for the longest distance and bi-directional conversion the entanglement fidelity remains larger than 95 % (98 %) without (with) background correction.
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Submitted 16 November, 2022;
originally announced November 2022.
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Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa
Authors:
Baptiste Vindolet,
Marie-Pierre Adam,
Loïc Toraille,
Mayeul Chipaux,
Antoine Hilberer,
Géraud Dupuy,
Lukas Razinkovas,
Audrius Alkauskas,
Gergő Thiering,
Adam Gali,
Mary De Feudis,
Midrel Wilfried Ngandeu Ngambou,
Jocelyn Achard,
Alexandre Tallaire,
Martin Schmidt,
Christoph Becher,
Jean-François Roch
Abstract:
We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon…
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We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon lines by 17 THz (70 meV) and 78 THz (320 meV), respectively. These measured pressure induced shifts are in good agreement with ab initio calculations that take into account the lattice compression based on the equation of state of diamond and that are extended to the case of the tin-vacancy (SnV) center. This work provides guidance on the use of group-IV-vacancy centers as quantum sensors under extreme pressures that will exploit their specific optical and spin properties induced by their intrinsic inversion-symmetric structure.
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Submitted 29 November, 2022; v1 submitted 20 September, 2022;
originally announced September 2022.
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2022 Roadmap for Materials for Quantum Technologies
Authors:
Christoph Becher,
Weibo Gao,
Swastik Kar,
Christian Marciniak,
Thomas Monz,
John G. Bartholomew,
Philippe Goldner,
Huanqian Loh,
Elizabeth Marcellina,
Kuan Eng Johnson Goh,
Teck Seng Koh,
Bent Weber,
Zhao Mu,
Jeng-Yuan Tsai,
Qimin Yan,
Samuel Gyger,
Stephan Steinhauer,
Val Zwiller
Abstract:
Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturit…
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Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.
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Submitted 15 February, 2022;
originally announced February 2022.
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Entangling single atoms over 33 km telecom fibre
Authors:
Tim van Leent,
Matthias Bock,
Florian Fertig,
Robert Garthoff,
Sebastian Eppelt,
Yiru Zhou,
Pooja Malik,
Matthias Seubert,
Tobias Bauer,
Wenjamin Rosenfeld,
Wei Zhang,
Christoph Becher,
Harald Weinfurter
Abstract:
Heralded entanglement between distant quantum memories is the key resource for quantum networks. Based on quantum repeater protocols, these networks will facilitate efficient large-scale quantum communication and distributed quantum computing. However, despite vast efforts, long-distance fibre based network links have not been realized yet. Here we present results demonstrating heralded entangleme…
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Heralded entanglement between distant quantum memories is the key resource for quantum networks. Based on quantum repeater protocols, these networks will facilitate efficient large-scale quantum communication and distributed quantum computing. However, despite vast efforts, long-distance fibre based network links have not been realized yet. Here we present results demonstrating heralded entanglement between two independent, remote single-atom quantum memories generated over fibre links with a total length up to 33 km. To overcome the attenuation losses in the long optical fibres of photons initially emitted by the Rubidium quantum memories, we employ polarization-preserving quantum frequency conversion to the low loss telecom band. The presented work represents a milestone towards the realization of efficient quantum network links.
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Submitted 30 November, 2021;
originally announced November 2021.
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Coherence of a charge stabilised tin-vacancy spin in diamond
Authors:
Johannes Görlitz,
Dennis Herrmann,
Philipp Fuchs,
Takayuki Iwasaki,
Takashi Taniguchi,
Detlef Rogalla,
David Hardeman,
Pierre-Olivier Colard,
Matthew Markham,
Mutsuko Hatano,
Christoph Becher
Abstract:
Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, i…
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Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, its usefulness is severely limited by termination of the fluorescence under resonant excitation [1,2,3]. Here, we unveil the underlying charge cycle of group IV-vacancy (G4V) centres and exploit it to demonstrate highly efficient initialisation of the desired negative charge state of single SnV centres while preserving long term stable optical resonances. We furthermore all-optically probe the coherence of the ground state spins by means of coherent population trap** and find a spin dephasing time of 5$μ$s. Additionally, we demonstrate proof-of-principle single shot spin state readout without the necessity of a magnetic field aligned to the symmetry axis of the defect.
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Submitted 27 May, 2022; v1 submitted 11 October, 2021;
originally announced October 2021.
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A cavity-based optical antenna for color centers in diamond
Authors:
Philipp Fuchs,
Thomas Jung,
Michael Kieschnick,
Jan Meijer,
Christoph Becher
Abstract:
An efficient atom-photon-interface is a key requirement for the integration of solid-state emitters such as color centers in diamond into quantum technology applications. Just like other solid state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mi…
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An efficient atom-photon-interface is a key requirement for the integration of solid-state emitters such as color centers in diamond into quantum technology applications. Just like other solid state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mirrors coated on a thin single crystal diamond membrane, forming a planar Fabry-Pérot cavity that improves the photon extraction from single tin vacancy (SnV) centers as well as their coupling to an excitation laser. Upon numerical optimization of the structure, we find theoretical enhancements in the collectible photon rate by a factor of 60 as compared to the bulk case. As a proof-of-principle demonstration, we fabricate single crystal diamond membranes with sub-$μ$m thickness and create SnV centers by ion implantation. Employing off-resonant excitation, we show a 6-fold enhancement of the collectible photon rate, yielding up to half a million photons per second from a single SnV center. At the same time, we observe a significant reduction of the required excitation power in accordance with theory, demonstrating the functionality of the cavity as an optical antenna. Due to its planar design, the antenna simultaneously provides similar enhancements for a large number of emitters inside the membrane. Furthermore, the monolithic structure provides high mechanical stability and straightforwardly enables operation under cryogenic conditions as required in most spin-photon interface implementations.
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Submitted 21 May, 2021;
originally announced May 2021.
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Characterization of single photon sources for radiometry applications at room temperature
Authors:
Hee-** Lim,
Dong-Hoon Lee,
In-ho Bae,
Kwang-Yong Jeong,
Christoph Becher,
Sejeong Kim,
Igor Aharonovich,
Kee Suk Hong
Abstract:
A single photon source with high repeatability and low uncertainties is the key element for few-photon metrology based on photon numbers. While low photon number fluctuations and high repeatability are important figures for qualification as a standard light source, these characteristics are limited in single photon emitters by some malicious phenomena like blinking or internal relaxations to varyi…
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A single photon source with high repeatability and low uncertainties is the key element for few-photon metrology based on photon numbers. While low photon number fluctuations and high repeatability are important figures for qualification as a standard light source, these characteristics are limited in single photon emitters by some malicious phenomena like blinking or internal relaxations to varying degrees in different materials. This study seeks to characterize photon number fluctuations and repeatability for radiometry applications at room temperature. For generality in this study, we collected photon statistics data with various single photon emitters of $g^{(2)}(0) < 1$ at low excitation power and room temperature in three material platforms: silicon vacancy in diamond, defects in GaN, and vacancy in hBN. We found common factors related with the relaxation times of the internal states that indirectly affect photon number stability. We observed a high stability of photon number with defects in GaN due to faster relaxations compared with vacancies in hBN, which on the other hand produced high rates ($> 10^6$) of photons per second. Finally, we demonstrate repeatable radiant flux measurements of a bright hBN single photon emitter for a wide radiant flux range from a few tens of femtowatts to one picowatt.
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Submitted 21 July, 2020;
originally announced July 2020.
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Effect of phonons on the electron spin resonance absorption spectrum
Authors:
Ariel Norambuena,
Alejandro Jimenez,
Christoph Becher,
Jerónimo R. Maze
Abstract:
The unavoidable presence of vibrations in solid-state devices can drastically modify the expected electron spin resonance (ESR) absorption spectrum in magnetically active systems. In this work, we model the effect of phonons and temperature on the ESR signal in molecular systems with strong $E \otimes e$ Jahn-Teller (JT) effect and an electronic spin-$1/2$. Our microscopic model considers the line…
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The unavoidable presence of vibrations in solid-state devices can drastically modify the expected electron spin resonance (ESR) absorption spectrum in magnetically active systems. In this work, we model the effect of phonons and temperature on the ESR signal in molecular systems with strong $E \otimes e$ Jahn-Teller (JT) effect and an electronic spin-$1/2$. Our microscopic model considers the linear JT interaction with a continuum of phonon modes, the spin-orbit coupling, the Zeeman effect, and the response of the system under a weak oscillating magnetic field. We derive a Lindblad master equation for the orbital and spin degrees of freedom, where one- and two-phonon processes are considered for the phonon-induced relaxation, and the thermal dependence of Ham reduction factors is calculated. We find that the suppression of ESR signals is due to phonon broadening but not based on the common assumption of orbital quenching. Our results can be applied to explain the experimentally observed absence of the ESR signal in color centers in diamond, such as the neutral nitrogen-vacancy and negatively charged silicon-vacancy color centers in diamond.
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Submitted 24 April, 2020; v1 submitted 21 April, 2020;
originally announced April 2020.
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Extending Quantum Links: Modules for Fiber- and Memory-Based Quantum Repeaters
Authors:
Peter van Loock,
Wolfgang Alt,
Christoph Becher,
Oliver Benson,
Holger Boche,
Christian Deppe,
Jürgen Eschner,
Sven Höfling,
Dieter Meschede,
Peter Michler,
Frank Schmidt,
Harald Weinfurter
Abstract:
We analyze elementary building blocks for quantum repeaters based on fiber channels and memory stations. Implementations are considered for three different physical platforms, for which suitable components are available: quantum dots, trapped atoms and ions, and color centers in diamond. We evaluate and compare the performances of basic quantum repeater links for these platforms both for present-d…
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We analyze elementary building blocks for quantum repeaters based on fiber channels and memory stations. Implementations are considered for three different physical platforms, for which suitable components are available: quantum dots, trapped atoms and ions, and color centers in diamond. We evaluate and compare the performances of basic quantum repeater links for these platforms both for present-day, state-of-the-art experimental parameters as well as for parameters that could in principle be reached in the future. The ultimate goal is to experimentally explore regimes at intermediate distances, up to a few 100 km, in which the repeater-assisted secret key transmission rates exceed the maximal rate achievable via direct transmission. We consider two different protocols, one of which is better adapted to the higher source clock rate and lower memory coherence time of the quantum dot platform, while the other circumvents the need of writing photonic quantum states into the memories in a heralded, non-destructive fashion. The elementary building blocks and protocols can be connected in a modular form to construct a quantum repeater system that is potentially scalable to large distances.
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Submitted 20 December, 2019;
originally announced December 2019.
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Spectroscopic Investigations of Negatively Charged Tin-Vacancy Centres in Diamond
Authors:
Johannes Görlitz,
Dennis Herrmann,
Gergő Thiering,
Philipp Fuchs,
Morgane Gandil,
Takayuki Iwasaki,
Takashi Taniguchi,
Michael Kieschnick,
Jan Meijer,
Mutsuko Hatano,
Adam Gali,
Christoph Becher
Abstract:
The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using…
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The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using photoluminescence excitation spectroscopy (PLE) we probe an energetically higher lying excited state and prove fully lifetime limited linewidths of single emitters at cryogenic temperatures. For these emitters we also investigate the stability of the charge state under resonant excitation. These results provide a detailed insight into the spectroscopic properties of the $\text{SnV}^-$ centre and lay the foundation for further studies regarding its suitability in QIP.
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Submitted 11 February, 2020; v1 submitted 20 September, 2019;
originally announced September 2019.
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Long-distance distribution of atom-photon entanglement at telecom wavelength
Authors:
Tim van Leent,
Matthias Bock,
Robert Garthoff,
Kai Redeker,
Wei Zhang,
Tobias Bauer,
Wenjamin Rosenfeld,
Christoph Becher,
Harald Weinfurter
Abstract:
Entanglement between stationary quantum memories and photonic channels is the essential resource for future quantum networks. Together with entanglement distillation it will enable for efficient distribution of quantum states. Here we report on the generation and observation of entanglement between a Rb-87 atom and a photon at telecom wavelength over 20 km optical fiber. For this purpose, we use p…
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Entanglement between stationary quantum memories and photonic channels is the essential resource for future quantum networks. Together with entanglement distillation it will enable for efficient distribution of quantum states. Here we report on the generation and observation of entanglement between a Rb-87 atom and a photon at telecom wavelength over 20 km optical fiber. For this purpose, we use polarization-preserving quantum frequency conversion to transform the wavelength of a photon entangled with the atomic spin state from 780 nm to the telecom S-band at 1522 nm. We achieve an unprecedented external device conversion efficiency of 57% and observe an entanglement fidelity between the atom and telecom photon of $\geqslant$78.5$\pm$0.9% over 20 km optical fiber, mainly limited by decoherence of the atomic state. This result is an important milestone on the road to distribute quantum information on a large scale.
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Submitted 3 September, 2019;
originally announced September 2019.
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Spin Measurements of NV Centers Coupled to a Photonic Crystal Cavity
Authors:
Thomas Jung,
Johannes Görlitz,
Benjamin Kambs,
Christoph Pauly,
Nicole Raatz,
Richard Nelz,
Elke Neu,
Andrew M. Edmonds,
Matthew Markham,
Frank Mücklich,
Jan Meijer,
Christoph Becher
Abstract:
Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate o…
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Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate of indistinguishable single photons and the signal-to-noise ratio (SNR) of coherent spin-photon interfaces. We here report on the enhancement of the SNR of the optical spin read-out achieved by tuning the mode of a two-dimensional photonic crystal (PhC)cavity into resonance with the NV-ZPL. PhC cavities are fabricated by focused ion beam (FIB) milling in thin reactive ion (RIE) etched ultrapure single crystal diamond membranes featuring modes with Q-factors of up to 8250 at mode volumes below one cubic wavelength. NV centers are produced in the cavities in a controlled fashion by a high resolution atomic force microscope (AFM) implantation technique. On cavity resonance we observe a lifetime shortening from 9.0ns to 8.0ns as well as an enhancement of the ZPL emission by almost one order of magnitude. Although on resonance the collection efficiency of ZPL photons and the spin-dependent fluorescence contrast are reduced, the SNR of the optical spin read-out is almost tripled for the cavity-coupled NV centers.
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Submitted 17 July, 2019;
originally announced July 2019.
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Origin of nonclassical light emission from defects in multi-layer hexagonal boron nitride
Authors:
Alexander Bommer,
Christoph Becher
Abstract:
In recent years, mono-layers and multi-layers of hexagonal boron nitride (hBN) have been demonstrated as host materials for localized atomic defects that can be used as emitters for ultra-bright, non-classical light. The origin of the emission, however, is still subject to debate. Based on measurements of photon statistics, lifetime and polarization on selected emitters we find that these atomic d…
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In recent years, mono-layers and multi-layers of hexagonal boron nitride (hBN) have been demonstrated as host materials for localized atomic defects that can be used as emitters for ultra-bright, non-classical light. The origin of the emission, however, is still subject to debate. Based on measurements of photon statistics, lifetime and polarization on selected emitters we find that these atomic defects do not act as pure single photon emitters. Our results strongly and consistently indicate that each zero phonon line of individual emitters is comprised of two independent electronic transitions. These results give new insights into the nature of the observed emission and hint at a double defect nature of emitters in multi-layer hBN.
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Submitted 24 April, 2019;
originally announced April 2019.
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Towards wafer-scale diamond nano- and quantum technologies
Authors:
Richard Nelz,
Johannes Görlitz,
Dennis Herrmann,
Abdallah Slablab,
Michel Challier,
Mariusz Radtke,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Elke Neu
Abstract:
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure…
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We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to $100 mm$ it offers the opportunity to up-scale diamond-based device fabrication.
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Submitted 22 October, 2018;
originally announced October 2018.
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Infrared laser magnetometry with a NV doped diamond intracavity etalon
Authors:
Yannick Dumeige,
Jean-François Roch,
Fabien Bretenaker,
Thierry Debuisschert,
Victor Acosta,
Christoph Becher,
Georgios Chatzidrosos,
Arne Wickenbrock,
Lykourgos Bougas,
Alexander Wilzewski,
Dmitry Budker
Abstract:
We propose an hybrid laser system consisting of a semiconductor external cavity laser associated to an intra-cavity diamond etalon doped with nitrogen-vacancy color centers. We consider laser emission tuned to the infrared absorption line that is enhanced under the magnetic field dependent nitrogen-vacancy electron spin resonance and show that this architecture leads to a compact solid-state magne…
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We propose an hybrid laser system consisting of a semiconductor external cavity laser associated to an intra-cavity diamond etalon doped with nitrogen-vacancy color centers. We consider laser emission tuned to the infrared absorption line that is enhanced under the magnetic field dependent nitrogen-vacancy electron spin resonance and show that this architecture leads to a compact solid-state magnetometer that can be operated at room-temperature. The sensitivity to the magnetic field limited by the photon shot-noise of the output laser beam is estimated to be around $250~\mathrm{fT/\sqrt{Hz}}$. Unlike usual NV center infrared magnetometry, this method would not require an external frequency stabilized laser. Since the proposed system relies on the competition between the laser threshold and an intracavity absorption, such laser-based optical sensor could be easily adapted to a broad variety of physical systems.
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Submitted 18 October, 2018;
originally announced October 2018.
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Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds
Authors:
Sarah Lindner,
Alexander Bommer,
Andreas Muzha,
Anke Krueger,
Laia Gines,
Soumen Mandal,
Oliver Williams,
Elisa Londero,
Adam Gali,
Christoph Becher
Abstract:
The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that the SiV center in nanodiamond exhibits a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate i…
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The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that the SiV center in nanodiamond exhibits a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range of approximatly 730 nm to 742 nm and broad linewidths between 5 nm and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 nm and 835 nm, but narrow linewidths from below 1 nm up to 4 nm. Supported by ab initio Kohn-Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of modified SiV centers. Whereas single photon emission is demonstrated for SiV centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.
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Submitted 10 July, 2018;
originally announced July 2018.
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Limitations on the indistinguishability of photons from remote solid state sources
Authors:
Benjamin Kambs,
Christoph Becher
Abstract:
In the present work, we derive a formalism that can be used to predict and interpret the time structure and achievable visibilities for two-photon interference (TPI) experiments using photons from two separate sources. The treatment particularly addresses photons stemming from solid state quantum emitters, which are often subject to pure dephasing (PD) and spectral diffusion (SD). Therefore, it in…
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In the present work, we derive a formalism that can be used to predict and interpret the time structure and achievable visibilities for two-photon interference (TPI) experiments using photons from two separate sources. The treatment particularly addresses photons stemming from solid state quantum emitters, which are often subject to pure dephasing (PD) and spectral diffusion (SD). Therefore, it includes the impact of phase- and emission frequency-jitter besides the influence of differing radiative lifetimes and a relative spectral detuning. While the treatment is mainly aimed at interference experiments after Hong-Ou-Mandel (HOM), we additionally offer generalized equations that are applicable to arbitrary linear optical gates, which rely on TPI.
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Submitted 12 July, 2018; v1 submitted 21 June, 2018;
originally announced June 2018.
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Coherent control and wave mixing in an ensemble of silicon vacancy centers in diamond
Authors:
Christian Weinzetl,
Johannes Görlitz,
Jonas Nils Becker,
Ian Alexander Walmsley,
Eilon Poem,
Joshua Nunn,
Christoph Becher
Abstract:
Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of fabrication of components. Silicon vacancy centers (SiV) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. He…
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Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of fabrication of components. Silicon vacancy centers (SiV) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. Here, we demonstrate resonant coherent manipulation, stimulated Raman adiabatic passage, and strong light-matter interaction via four-wave mixing of a weak signal field in an ensemble of SiV centers.
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Submitted 30 May, 2018;
originally announced May 2018.
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Two-photon interference in the telecom C-band after frequency conversion of photons from remote quantum emitters
Authors:
Jonas H. Weber,
Benjamin Kambs,
Jan Kettler,
Simon Kern,
Julian Maisch,
Hüseyin Vural,
Michael Jetter,
Simone L. Portalupi,
Christoph Becher,
Peter Michler
Abstract:
Efficient fiber-based long-distance quantum communication via quantum repeaters relies on deterministic single-photon sources at telecom wavelengths, with the potential to exploit the existing world-wide infrastructures. For upscaling the experimental complexity in quantum networking, two-photon interference (TPI) of remote non-classical emitters in the low-loss telecom bands is of utmost importan…
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Efficient fiber-based long-distance quantum communication via quantum repeaters relies on deterministic single-photon sources at telecom wavelengths, with the potential to exploit the existing world-wide infrastructures. For upscaling the experimental complexity in quantum networking, two-photon interference (TPI) of remote non-classical emitters in the low-loss telecom bands is of utmost importance. With respect to TPI of distinct emitters, several experiments have been conducted, e.g., using trapped atoms [Beugnon2006], ions [Maunz2007], NV-centers [Bernien2012, Sipahigil2012], SiV-centers [Sipahigil2014], organic molecules [Lettow2010] and semiconductor quantum dots (QDs) [Patel2010, Flagg2010, He2013b, Gold2014, Giesz2015, Thoma2017, Reindl2017, Zopf2017]; however, the spectral range was far from the highly desirable telecom C-band. Here, we report on TPI at 1550 nm between down-converted single photons from remote QDs [Michler2017Book], demonstrating quantum frequency conversion [Zaske2012, Ates2012, Kambs2016] as precise and stable mechanism to erase the frequency difference between independent emitters. On resonance, a TPI-visibility of (29+-3)% has been observed, being only limited by spectral diffusion processes of the individual QDs [Robinson2000, Kuhlmann2015]. Up to 2-km of additional fiber channel has been introduced in both or individual signal paths with no influence on TPI-visibility, proving negligible photon wave-packet distortion. The present experiment is conducted within a local fiber network covering several rooms between two floors of the building. Our studies pave the way to establish long-distance entanglement distribution between remote solid-state emitters including interfaces with various quantum hybrid systems [DeGreve2012,Maring2017,Bock2017,Maring2018].
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Submitted 19 March, 2018;
originally announced March 2018.
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High-fidelity entanglement between a trapped ion and a telecom photon via quantum frequency conversion
Authors:
Matthias Bock,
Pascal Eich,
Stephan Kucera,
Matthias Kreis,
Andreas Lenhard,
Christoph Becher,
Jürgen Eschner
Abstract:
Entanglement between a stationary quantum system and a flying qubit is an essential ingredient of a quantum-repeater network. It has been demonstrated for trapped ions, trapped atoms, color centers in diamond, or quantum dots. These systems have transition wavelengths in the blue, red or near-infrared spectral regions, whereas long-range fiber-communication requires wavelengths in the low-loss, lo…
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Entanglement between a stationary quantum system and a flying qubit is an essential ingredient of a quantum-repeater network. It has been demonstrated for trapped ions, trapped atoms, color centers in diamond, or quantum dots. These systems have transition wavelengths in the blue, red or near-infrared spectral regions, whereas long-range fiber-communication requires wavelengths in the low-loss, low-dispersion telecom regime. A proven tool to interconnect flying qubits at visible/NIR wavelengths to the telecom bands is quantum frequency conversion. Here we use an efficient polarization-preserving frequency converter connecting 854$\,$nm to the telecom O-band at 1310$\,$nm to demonstrate entanglement between a trapped $^{40}$Ca$^{+}$ ion and the polarization state of a telecom photon with a high fidelity of 98.2 $\pm$ 0.2$\%$. The unique combination of 99.75 $\pm$ 0.18$\%$ process fidelity in the polarization-state conversion, 26.5$\%$ external frequency conversion efficiency and only 11.4 photons/s conversion-induced unconditional background makes the converter a powerful ion-telecom quantum interface.
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Submitted 19 April, 2018; v1 submitted 13 October, 2017;
originally announced October 2017.
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Coherence properties and quantum control of silicon vacancy color centers in diamond
Authors:
Jonas Nils Becker,
Christoph Becher
Abstract:
Atomic-scale impurity spins, also called color centers, in an otherwise spin-free diamond host lattice have proven to be versatile tools for applications in solid-state-based quantum technologies ranging from quantum information processing (QIP) to quantum-enhanced sensing and metrology. Due to its wide band gap, diamond can host hundreds of different color centers. However, their suitability for…
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Atomic-scale impurity spins, also called color centers, in an otherwise spin-free diamond host lattice have proven to be versatile tools for applications in solid-state-based quantum technologies ranging from quantum information processing (QIP) to quantum-enhanced sensing and metrology. Due to its wide band gap, diamond can host hundreds of different color centers. However, their suitability for QIP or sensing applications has only been tested for a handful of these, with the nitrogen vacancy (NV) strongly dominating this field of research. Due to its limited optical properties, the success of the NV for QIP applications however strongly depends on the development of efficient photonic interfaces. In the past years the negatively charged silicon vacancy (SiV) center received significant attention due to its highly favourable spectral properties such as narrow zero phonon line transitions and weak phonon sidebands. We here review recent work investigating the SiV centre's orbital and electron spin coherence properties as well as techniques to coherently control its quantum state using microwave as well as optical fields and we outline potential future experimental directions to improve the SiV's coherence time scale and to develop it into a valuable tool for QIP applications.
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Submitted 29 September, 2017;
originally announced September 2017.
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All-optical control of the silicon-vacancy spin in diamond at millikelvin temperatures
Authors:
Jonas Nils Becker,
Benjamin **ault,
David Groß,
Mustafa Gündoğan,
Nadezhda Kukharchyk,
Matthew Markham,
Andrew Edmonds,
Mete Atatüre,
Pavel Bushev,
Christoph Becher
Abstract:
The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Here, we combine both to achieve all-optical coherent control of its spin states. We utilize this method to explore spin dephasing effects in an impurity-rich sample beyond the limit of phonon-induced decoherence: Employing Ra…
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The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Here, we combine both to achieve all-optical coherent control of its spin states. We utilize this method to explore spin dephasing effects in an impurity-rich sample beyond the limit of phonon-induced decoherence: Employing Ramsey and Hahn-echo techniques at 12mK base temperature we identify resonant coupling to a substitutional nitrogen spin bath as the limiting decoherence source for the electron spin.
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Submitted 28 August, 2017;
originally announced August 2017.
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Coherence and Entanglement Preservation of Frequency-Converted Heralded Single Photons
Authors:
Andreas Lenhard,
José Brito,
Matthias Bock,
Jürgen Eschner,
Christoph Becher
Abstract:
We report on quantum frequency conversion of near-infrared photons from a wavelength of 854nm to the telecommunication O-band at 1310nm with 8% overall conversion efficiency. Entangled photon pairs at 854nm are generated via type-II spontaneous parametric down conversion. One photon is mixed with a strong pump field in a nonlinear ridge waveguide for its conversion to 1310nm. We demonstrate preser…
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We report on quantum frequency conversion of near-infrared photons from a wavelength of 854nm to the telecommunication O-band at 1310nm with 8% overall conversion efficiency. Entangled photon pairs at 854nm are generated via type-II spontaneous parametric down conversion. One photon is mixed with a strong pump field in a nonlinear ridge waveguide for its conversion to 1310nm. We demonstrate preservation of first and second order coherence of the photons in the conversion process. Based on this we infer the coherence function of the two-photon state and compare it with the actual measured one. This measurement demonstrates preservation of time-energy entanglement of the pair. With 88% visibility we violate a Bell inequality.
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Submitted 8 March, 2017;
originally announced March 2017.
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Coherent control of the silicon-vacancy spin in diamond
Authors:
Benjamin **ault,
David-Dominik Jarausch,
Christian Hepp,
Lina Klintberg,
Jonas N. Becker,
Matthew Markham,
Christoph Becher,
Mete Atatüre
Abstract:
Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essentia…
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Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essential. Here, we report the measurement of optically detected magnetic resonance and the demonstration of coherent control of a single silicon-vacancy centre spin with a microwave field. Using Ramsey interferometry, we directly measure a spin coherence time, T2*, of 115 +/- 9 ns at 3.6 K. The temperature dependence of coherence times indicates that dephasing and decay of the spin arise from single phonon-mediated excitation between orbital branches of the ground state. Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces.
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Submitted 24 January, 2017;
originally announced January 2017.
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Cavity-enhanced single photon source based on the silicon vacancy center in diamond
Authors:
Julia Benedikter,
Hanno Kaupp,
Thomas Hümmer,
Yuejiang Liang,
Alexander Bommer,
Christoph Becher,
Anke Krueger,
Jason M. Smith,
Theodor W. Hänsch,
David Hunger
Abstract:
Single photon sources are an integral part of various quantum technologies, and solid state quantum emitters at room temperature appear as a promising implementation. We couple the fluorescence of individual silicon vacancy centers in nanodiamonds to a tunable optical microcavity to demonstrate a single photon source with high efficiency, increased emission rate, and improved spectral purity compa…
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Single photon sources are an integral part of various quantum technologies, and solid state quantum emitters at room temperature appear as a promising implementation. We couple the fluorescence of individual silicon vacancy centers in nanodiamonds to a tunable optical microcavity to demonstrate a single photon source with high efficiency, increased emission rate, and improved spectral purity compared to the intrinsic emitter properties. We use a fiber-based microcavity with a mode volume as small as $3.4~λ^3$ and a quality factor of $1.9\times 10^4$ and observe an effective Purcell factor of up to 9.2. We furthermore study modifications of the internal rate dynamics and propose a rate model that closely agrees with the measurements. We observe lifetime changes of up to 31%, limited by the finite quantum efficiency of the emitters studied here. With improved materials, our achieved parameters predict single photon rates beyond 1 GHz.
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Submitted 3 March, 2017; v1 submitted 16 December, 2016;
originally announced December 2016.
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Highly Sensitive On-Chip Magnetometer with Saturable Absorbers in Two-Color Microcavities
Authors:
O. Gazzano,
C. Becher
Abstract:
Interacting resonators can lead to strong non-linearities but the details can be complicated to predict. In this work, we study the non-linearities introduced by two nested microcavities that interact with nitrogen vacancy centers in a diamond waveguide. Each cavity has differently designed resonance; one in the green and one in the infrared. The magnetic-field dependence of the nitrogen vacancy c…
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Interacting resonators can lead to strong non-linearities but the details can be complicated to predict. In this work, we study the non-linearities introduced by two nested microcavities that interact with nitrogen vacancy centers in a diamond waveguide. Each cavity has differently designed resonance; one in the green and one in the infrared. The magnetic-field dependence of the nitrogen vacancy center absorption rates on the green and the recently observed infrared transitions allows us to propose a scalable on-chip magnetometer that combines high magnetic-field sensitivity and micrometer spatial resolution. By investigating the system behaviors over several intrinsic and extrinsic parameters, we explain the main non-linearities induced by the NV centers and enhanced by the cavities. We finally show that the cavities can improve the magnetic-field sensitivity by up to two orders of magnitudes.
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Submitted 14 March, 2016;
originally announced March 2016.
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Photoluminescence excitation and spectral hole burning spectroscopy of silicon vacancy centers in diamond
Authors:
Carsten Arend,
Jonas Nils Becker,
Hadwig Sternschulte,
Doris Steinmüller-Nethl,
Christoph Becher
Abstract:
Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to pertubations of the dielectric environment, i.e. they show very weak spectral diffusion. This property renders ensembles of SiV centers interesting for s…
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Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to pertubations of the dielectric environment, i.e. they show very weak spectral diffusion. This property renders ensembles of SiV centers interesting for sensing applications. We here report on photoluminescence excitation (PLE) spectroscopy on an SiV ensemble in a low strain, CVD-grown high quality diamond layer, where we measure the fine structure with high resolution and obtain the linewidths and splittings of the SiV centers. We investigate the temperature dependence of the width and position of the fine structure peaks. Our measurements reveal linewidths of about 10 GHz as compared to a lifetime limited width on the order of 0.1 GHz. This difference arises from the inhomogeneous broadening of the transitions caused by residual strain. To overcome inhomogeneous broadening we use spectral hole burning spectroscopy which enables us to measure a nearly lifetime limited homogeneous linewidth of 279 MHz. Furthermore, we demonstrate evidence of coherent interaction in the system by driving a $Λ$-scheme. Additional measurements on single emitters created by ion implantation confirm the homogeneous linewidths seen in the spectral hole burning experiments and relate the ground state splitting to the decoherence rate.
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Submitted 14 March, 2016;
originally announced March 2016.
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Ultrafast, all-optical coherent control of single silicon vacancy colour centres in diamond
Authors:
Jonas Nils Becker,
Johannes Görlitz,
Carsten Arend,
Matthew Markham,
Christoph Becher
Abstract:
Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV offers an optically accessible Λ-type level structure with a large orbital level splitting even without the need of an external magnetic field and previous stu…
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Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV offers an optically accessible Λ-type level structure with a large orbital level splitting even without the need of an external magnetic field and previous studies determined the ground state coherence time of the centre to be on the order of 35-45ns. While these studies already indicate the feasibility of an ultrafast all-optical coherent control of the SiV, no experimental realization has been presented so far. Here, we report on optical Rabi oscillations and Ramsey interference between the ground and the excited state of the SiV using 12 ps long, resonant rotation pulses. Moreover, utilizing a Λ-scheme, we demonstrate Raman-based coherent Rabi rotations and Ramsey interference within the ground state manifold using a single, 1ps long off-resonant pulse. These measurements prove the accessibility of the complete set of single-qubit operations relying solely on optical fields and pave the way for high-speed QIP applications using SiV centres.
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Submitted 2 March, 2016;
originally announced March 2016.
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Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers
Authors:
Carsten Arend,
Patrick Appel,
Jonas Nils Becker,
Marcel Schmidt,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Patrick Maletinsky,
Elke Neu
Abstract:
We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned ar…
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We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.
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Submitted 9 February, 2016; v1 submitted 11 November, 2015;
originally announced November 2015.
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Quantum and classical telecommunication channel multiplexing
Authors:
Andreas Lenhard,
José Brito,
Stephan Kucera,
Matthias Bock,
Jürgen Eschner,
Christoph Becher
Abstract:
We demonstrate the multiplexing of a classical coherent and a quantum state of light in a single telecommunciation fiber. For this purpose we make use of spontaneous parametric down conversion and quantum frequency conversion to generate photon pairs at 854 nm and the telecom O-band. The herald photon triggers a telecom C-band laser pulse. The telecom single photon and the laser pulse are combined…
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We demonstrate the multiplexing of a classical coherent and a quantum state of light in a single telecommunciation fiber. For this purpose we make use of spontaneous parametric down conversion and quantum frequency conversion to generate photon pairs at 854 nm and the telecom O-band. The herald photon triggers a telecom C-band laser pulse. The telecom single photon and the laser pulse are combined and coupled to a standard telecom fiber. Low background time correlation of the classical and quantum signal behind the fiber shows successful telecommunication channel multiplexing.
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Submitted 22 July, 2015;
originally announced July 2015.
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Telecom-heralded single photon absorption by a single atom
Authors:
Andreas Lenhard,
Matthias Bock,
Stephan Kucera,
José Brito,
Pascal Eich,
Philipp Müller,
Christoph Becher,
Jürgen Eschner
Abstract:
We present, characterize, and apply a photonic quantum interface between the near infrared and telecom spectral regions. A singly resonant optical parametric oscillator (OPO) operated below threshold, in combination with external filters, generates high-rate ($>2.5\cdot10^6~{\rm s}^{-1}$) narrowband photon pairs ($\sim 7$ MHz bandwidth); the signal photons are tuned to resonance with an atomic tra…
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We present, characterize, and apply a photonic quantum interface between the near infrared and telecom spectral regions. A singly resonant optical parametric oscillator (OPO) operated below threshold, in combination with external filters, generates high-rate ($>2.5\cdot10^6~{\rm s}^{-1}$) narrowband photon pairs ($\sim 7$ MHz bandwidth); the signal photons are tuned to resonance with an atomic transition in Ca$^+$, while the idler photons are at telecom wavelength. Quantum interface operation is demonstrated through high-rate absorption of single photons by a single trapped ion ($\sim 670~{\rm s}^{-1}$), heralded by coincident telecom photons.
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Submitted 30 April, 2015;
originally announced April 2015.
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Nanoimplantation and Purcell enhancement of single NV centers in photonic crystal cavities in diamond
Authors:
Janine Riedrich-Möller,
Sébastien Pezzagna,
Jan Meijer,
Christoph Pauly,
Frank Mücklich,
Matthew Markham,
Andrew M. Edmonds,
Christoph Becher
Abstract:
We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5keV-nitrogen ion beam through a pierced tip of an atomic force microscope (AFM). We demonstrate coupling of the imp…
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We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5keV-nitrogen ion beam through a pierced tip of an atomic force microscope (AFM). We demonstrate coupling of the implanted NV centers' broad band fluorescence to a cavity mode and observe Purcell enhancement of the spontaneous emission. The results are in good agreement with a master equation model for the cavity coupling.
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Submitted 19 March, 2015;
originally announced March 2015.
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All-optical formation of coherent dark states of silicon-vacancy spins in diamond
Authors:
Benjamin **ault,
Jonas N. Becker,
Carsten H. H. Schulte,
Carsten Arend,
Christian Hepp,
Tillmann Godde,
Alexander I. Tartakovskii,
Matthew Markham,
Christoph Becher,
Mete Atature
Abstract:
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum.…
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Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trap**. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 250 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.
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Submitted 14 September, 2014;
originally announced September 2014.
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Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond
Authors:
Janine Riedrich-Möller,
Carsten Arend,
Christoph Pauly,
Frank Mücklich,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher
Abstract:
Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives…
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Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives rise to a resonant Purcell enhancement of the zero-phonon transition by a factor of 19, coming along with a 2.5-fold reduction of the emitter's lifetime.
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Submitted 8 August, 2014;
originally announced August 2014.
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Narrow-band single photon emission at room temperature based on a single Nitrogen-vacancy center coupled to an all-fiber-cavity
Authors:
Roland Albrecht,
Alexander Bommer,
Christoph Pauly,
Frank Mücklich,
Andreas W. Schell,
Philip Engel,
Tim Schröder,
Oliver Benson,
Jakob Reichel,
Christoph Becher
Abstract:
We report the realization of a device based on a single Nitrogen-vacancy (NV) center in diamond coupled to a fiber-cavity for use as single photon source (SPS). The device consists of two concave mirrors each directly fabricated on the facets of two optical fibers and a preselected nanodiamond containing a single NV center deposited onto one of these mirrors. Both, cavity in- and output are direct…
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We report the realization of a device based on a single Nitrogen-vacancy (NV) center in diamond coupled to a fiber-cavity for use as single photon source (SPS). The device consists of two concave mirrors each directly fabricated on the facets of two optical fibers and a preselected nanodiamond containing a single NV center deposited onto one of these mirrors. Both, cavity in- and output are directly fiber-coupled and the emission wavelength is easily tunable by variation of the separation of the two mirrors with a piezo-electric crystal. By coupling to the cavity we achieve an increase of the spectral photon rate density by two orders of magnitude compared to free-space emission of the NV center. With this work we establish a simple all-fiber based SPS with promising prospects for the integration into photonic quantum networks.
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Submitted 22 July, 2014;
originally announced July 2014.
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Optical signatures of silicon-vacancy spins in diamond
Authors:
Tina Muller,
Christian Hepp,
Benjamin **ault,
Elke Neu,
Stefan Gsell,
Matthias Schreck,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Christoph Becher,
Mete Atature
Abstract:
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of t…
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Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with ultrabright single photon emission predominantly into the desirable zero-phonon line. The challenge for utilizing this centre is to realise the hitherto elusive optical access to its electronic spin. Here, we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. In low-strain bulk diamond spin-selective excitation under finite magnetic field reveals a spin-state purity approaching unity in the excited state. We also investigate the effect of strain on the centres in nanodiamonds and discuss how spin selectivity in the excited state remains accessible in this regime.
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Submitted 10 December, 2013;
originally announced December 2013.
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The electronic structure of the silicon vacancy color center in diamond
Authors:
Christian Hepp,
Tina Müller,
Victor Waselowski,
Jonas N. Becker,
Benjamin **ault,
Hadwig Sternschulte,
Doris Steinmüller-Nethl,
Adam Gali,
Jeronimo R. Maze,
Mete Atatüre,
Christoph Becher
Abstract:
The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar response of si…
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The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar response of single centers and a SiV ensemble in a low strain reference sample proves our ability to fabricate almost perfect single SiVs, revealing the true nature of the defect's electronic properties. We model the electronic states using a group-theoretical approach yielding a good agreement with the experimental observations. Furthermore, the model correctly predicts polarization measurements on single SiV centers and explains recently discovered spin selective excitation of SiV defects.
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Submitted 11 October, 2013;
originally announced October 2013.
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Evaluation of nitrogen- and silicon-vacancy defect centres as single photon sources in quantum key distribution
Authors:
Matthias Leifgen,
Tim Schröder,
Friedemann Gädeke,
Robert Riemann,
Valentin Métillon,
Elke Neu,
Christian Hepp,
Carsten Arend,
Christoph Becher,
Kristian Lauritsen,
Oliver Benson
Abstract:
We demonstrate a quantum key distribution (QKD) testbed for room temperature single photon sources based on defect centres in diamond. A BB84 protocol over a short free-space transmission line is implemented. The performance of nitrogen-vacancy (NV) as well as silicon-vacancy defect (SiV) centres is evaluated and an extrapolation for next-generation sources with enhanced efficiency is discussed.
We demonstrate a quantum key distribution (QKD) testbed for room temperature single photon sources based on defect centres in diamond. A BB84 protocol over a short free-space transmission line is implemented. The performance of nitrogen-vacancy (NV) as well as silicon-vacancy defect (SiV) centres is evaluated and an extrapolation for next-generation sources with enhanced efficiency is discussed.
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Submitted 4 October, 2013;
originally announced October 2013.
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Single-photon frequency conversion in nonlinear crystals
Authors:
Susanne Blum,
Georgina A. Olivares-Rentería,
Carlo Ottaviani,
Christoph Becher,
Giovanna Morigi
Abstract:
Frequency conversion of single photons in a nonlinear crystal is theoretically discussed. Losses and noise are included within a Heisenberg-Langevin formalism for the propagating photon field. We calculate the first- and second-order correlation functions of the frequency-converted light when the input is a train of single-photon pulses. This model allows one to identify the requirements on the no…
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Frequency conversion of single photons in a nonlinear crystal is theoretically discussed. Losses and noise are included within a Heisenberg-Langevin formalism for the propagating photon field. We calculate the first- and second-order correlation functions of the frequency-converted light when the input is a train of single-photon pulses. This model allows one to identify the requirements on the nonlinear device so that it can be integrated in a quantum network.
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Submitted 10 September, 2013;
originally announced September 2013.
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Symmetry-Tunable Environment in Functional Ferroic Heterostructures
Authors:
C. Becher,
M. Trassin,
M. Lilienblum,
C. T. Nelson,
S. J. Suresha,
D. Yi,
P. Yu,
R. Ramesh,
M. Fiebig,
D. Meier
Abstract:
We demonstrate a concept for post-growth symmetry control in oxide heterostructures. A functional oxide is sandwiched between two ferroelectric layers and inversion symmetry at the position of the oxide constituent is reversibly switched on or off by layer-selective electric-field poling. The functionality of this process is monitored by optical second harmonic generation. The generalization of ou…
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We demonstrate a concept for post-growth symmetry control in oxide heterostructures. A functional oxide is sandwiched between two ferroelectric layers and inversion symmetry at the position of the oxide constituent is reversibly switched on or off by layer-selective electric-field poling. The functionality of this process is monitored by optical second harmonic generation. The generalization of our approach to other materials and symmetries is considered. We thus establish ferroic trilayer structures as device components in which symmetry-driven charge-, spin-, and strain-related functionalities can be activated and deactivated at will.
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Submitted 22 August, 2013;
originally announced August 2013.
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Tuning the Ultrafast Spin Dynamics in Carrier-Density-Controlled Ferromagnets
Authors:
Masakazu Matsubara,
Alexander Schroer,
Andreas Schmehl,
Alexander Melville,
Carsten Becher,
Mauricio Trujillo Martinez,
Darrell G. Schlom,
Jochen Mannhart,
Johann Kroha,
Manfred Fiebig
Abstract:
Ultrafast strengthening or quenching of the ferromagnetic order of semiconducting Eu1-xGdxO was achieved by resonant photoexcitation. The modification of the magnetic order is established within 3 ps as revealed by optical second harmonic generation. A theoretical analysis shows that the response is determined by the interplay of chemically and optically generated carriers in a nonequilibrium scen…
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Ultrafast strengthening or quenching of the ferromagnetic order of semiconducting Eu1-xGdxO was achieved by resonant photoexcitation. The modification of the magnetic order is established within 3 ps as revealed by optical second harmonic generation. A theoretical analysis shows that the response is determined by the interplay of chemically and optically generated carriers in a nonequilibrium scenario beyond the three-temperature model. General criteria for the design of spintronics materials with tunable ultrafast spin dynamics are given.
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Submitted 5 November, 2013; v1 submitted 9 April, 2013;
originally announced April 2013.